US10782340B2 - Dynamic response analysis prober device - Google Patents

Dynamic response analysis prober device Download PDF

Info

Publication number
US10782340B2
US10782340B2 US15/737,966 US201615737966A US10782340B2 US 10782340 B2 US10782340 B2 US 10782340B2 US 201615737966 A US201615737966 A US 201615737966A US 10782340 B2 US10782340 B2 US 10782340B2
Authority
US
United States
Prior art keywords
sample
input waveform
waveform
input
prober device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US15/737,966
Other languages
English (en)
Other versions
US20180299504A1 (en
Inventor
Masaaki Komori
Katsuo Oki
Yasuhiko Nara
Takayuki Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Assigned to HITACHI HIGH-TECHNOLOGIES CORPORATION reassignment HITACHI HIGH-TECHNOLOGIES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KOMORI, MASAAKI, MIZUNO, TAKAYUKI, NARA, YASUHIKO, OKI, KATSUO
Publication of US20180299504A1 publication Critical patent/US20180299504A1/en
Assigned to HITACHI HIGH-TECH CORPORATION reassignment HITACHI HIGH-TECH CORPORATION CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: HITACHI HIGH-TECHNOLOGIES CORPORATION
Application granted granted Critical
Publication of US10782340B2 publication Critical patent/US10782340B2/en
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2889—Interfaces, e.g. between probe and tester
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/3183—Generation of test inputs, e.g. test vectors, patterns or sequences
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G01R31/2603—Apparatus or methods therefor for curve tracing of semiconductor characteristics, e.g. on oscilloscope
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2653—Contactless testing using electron beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
    • G01R31/275—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements for testing individual semiconductor components within integrated circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2879—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to electrical aspects, e.g. to voltage or current supply or stimuli or to electrical loads
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2822—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere of microwave or radiofrequency circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2832—Specific tests of electronic circuits not provided for elsewhere
    • G01R31/2836—Fault-finding or characterising
    • G01R31/2839—Fault-finding or characterising using signal generators, power supplies or circuit analysers
    • G01R31/2841—Signal generators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2008—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated specially adapted for studying electrical or magnetical properties of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24592—Inspection and quality control of devices

Definitions

  • the present invention relates to a prober device for fine-Structured device characteristic evaluation, and particularly relates to a failure analysis of a fine-Structured device using a dynamic response analysis.
  • the failure analysis of the electronic device is performed by observing a structural defect of a narrowed down estimated defective position after narrowing down a defective position by various nondestructive analyses.
  • the prober device is proposed in which the electronic device is polished to the vicinity where the defective position is present, an extremely minute probe directly is brought into contact with a circuit of the electronic device, and electric characteristics of the electronic device are evaluated.
  • JP-A-2013-187510 (PTL 1), by using a scanning electron microscope (SEM), the electric characteristics are measured by bringing a minute probe into contact with a minute transistor or the like present on a sample surface while observing the probe and an enlarged image of the sample surface. With this, it is possible to evaluate the electric characteristics of only one of 100 million transistors present in the sample which was difficult so far.
  • SEM scanning electron microscope
  • the transistors are operated with high-speed driving signals of megahertz order and gigahertz order. More precisely, in order to evaluate the electric characteristics of the transistor, it is desirable that a response analysis (dynamic analysis or dynamic evaluation) of a dynamic signal which is a state close to an actual operation environment, can be performed.
  • a measurement system that needs to transmit such a high-speed signal needs to have a sufficient frequency bandwidth with respect to a frequency to be measured.
  • a higher speed signal high-frequency signal
  • a large frequency bandwidth is required.
  • FIG. 1 is a schematic diagram of a measurement path of the prober device.
  • an input signal generated from a function generator 1 is sent to a probe 3 through an input cable 2 , and applied to a sample 4 .
  • the response signal of the sample 4 is observed by an oscilloscope 6 through an output cable 5 .
  • the input cable 2 is disposed in the vacuum chamber 7 .
  • the length of the input cable 2 is fixed, and the total cable length is processed as a meter-order scale that is greatly different from a micro scale equal to or less than a millimeter such as an integrated circuit board.
  • Such a difference in the scale tends to cause an increase of transmission loss and reflection of each unit configuring the measurement system and which becomes a harmful effect in high-speed transmission.
  • the input cable 2 and the output cable 5 are implemented with a GND cover, but the probe 3 is not implemented with the GND cover. With such a structure, impedance fluctuation can be large.
  • the sample 4 is polished to a layer to be brought into contact with the probe 3 . Furthermore, in measurement by the prober device, after the sample 4 is polished to a layer to be brought into contact with the probe 3 , the sample 4 is disposed in the prober device and the probe 3 is brought into contact with a polished surface of the sample 4 such that the measurement is performed.
  • FIG. 2A and FIG. 2B are schematic diagrams at the time of measurement by the prober device, and illustrate a state in which the probe 3 is in contact with the polished surface of the sample 4 , FIG. 2A is a top view, and FIG. 2B is a side view.
  • the probe 3 In order to measure electric characteristics of the sample 4 , the probe 3 is in contact with a contact 8 of the sample 4 , but contact resistance due to dirt on a contact surface of an order of several tens of nanometers also causes impedance fluctuation.
  • the response analysis of the dynamic signal in the prober device becomes difficult at a megahertz level at which the LSI is actually operated, in particular, at a frequency of an order of gigahertz.
  • An object of the present invention is to perform the failure analysis of the fine-Structured device such as a minute transistor configuring the LSI by using the dynamic signal equal to or greater than the megahertz level in the prober device.
  • the present invention relates to shaping of an input waveform of a dynamic electric signal inputted to one of the probes and observing of an output waveform of a dynamic electric signal output through the sample when the response analysis of the dynamic signal is performed with respect to the fine-Structured device in the prober device, or adjusting of the input waveform such that an output waveform of the dynamic electric signal output through the sample becomes approximately a pulse shape.
  • the fine-Structured device such as the minute transistor configuring the LSI, it is possible to perform the response analysis of a high-speed dynamic signal equal to or greater than a megahertz level.
  • FIG. 1 is a schematic diagram of a measurement path of a prober device.
  • FIG. 2A is a diagram illustrating a state where a probe is in contact with a sample.
  • FIG. 2B is a diagram illustrating the state where the probe is in contact with the sample.
  • FIG. 3 is a schematic diagram of the prober device for fine-Structured device characteristic evaluation of Example 1.
  • FIG. 4A is a graph for explaining the influence of a frequency bandwidth on a pulse shape.
  • FIG. 4B is a graph for explaining the influence of the frequency bandwidth on the pulse shape.
  • FIG. 4C is a graph for explaining the influence of the frequency bandwidth on the pulse shape.
  • FIG. 5 is a configuration diagram of a prober device for fine-Structured device characteristic evaluation of Example 2.
  • FIG. 6 is a schematic diagram of a prober device for fine-Structured device characteristic evaluation of Example 3.
  • FIG. 7 is a schematic diagram of a prober device for fine-Structured device characteristic evaluation of Example 4.
  • FIG. 8 is a schematic diagram of a prober device for fine-Structured device characteristic evaluation of Example 5.
  • a prober device including a sample stage that holds a sample, a plurality of probes that come into contact with predetermined positions of the sample, a sample room in which the sample stage and the plurality of probes are disposed in an inside thereof, a charged particle beam microscope for observing the sample and the probe, an input waveform forming mechanism that shapes an input waveform of a dynamic electric signal to be input to one of the probes and an output waveform observing mechanism for observing an output waveform of the dynamic electric signal output through the sample.
  • the input waveform is adjusted such that the output waveform of the dynamic electric signal output through the sample becomes approximately a pulse shape.
  • the input waveform is convex at the front part of a waveform or is concave at the rear part of the waveform.
  • the prober device including a database in which the input waveform of the dynamic electric signal is recorded, and the input waveform forming mechanism forms the input waveform recorded in the database according to a condition of the dynamic electric signal to be input.
  • the prober device in which the input waveform forming mechanism automatically forms the input waveform based on equivalent circuit simulation of a measurement system.
  • the prober device in which the input waveform forming mechanism automatically corrects the output waveform such that the output waveform becomes approximately rectangular based on the output waveform.
  • FIG. 3 is a schematic diagram of the prober device for fine-Structured device characteristic evaluation of the Example.
  • the prober device in the Example includes a probe 3 for measuring electric characteristics of the sample 4 by being brought into contact with a contact or the like on a sample 4 in a vacuum chamber 7 which can maintain vacuum therein, a SEM column 9 for irradiating the probe 3 and the sample 4 with an electron beam, and a secondary electron detector 10 for detecting secondary electrons generated from the probe 3 and the sample 4 by the irradiation with the electron beam.
  • a probe driving mechanism (not shown) for driving the probe 3 and a sample stage 11 for moving a position of the sample 4 are provided.
  • the number of the probes may be more than three, and, for example, six or more probes may be provided.
  • Movement of the probe 3 and the sample stage 11 is operated by a measurer using a control terminal (not shown).
  • the probe 3 is moved to the desired contact, the probe 3 is brought into contact with the contact, a measurement signal is sent from the function generator 1 to an oscilloscope 6 via the probe 3 , a voltage required for driving the transistor is applied by a semiconductor parameter analyzer 12 , and dynamic response characteristics are obtained such that the electric characteristics of the sample 4 are analyzed and evaluated.
  • FIG. 4A to FIG. 4C are graphs for explaining the influence of the frequency bandwidth on the pulse shape.
  • a bandwidth of sufficient transmission frequency is secured, in a case where a pulse wave is transmitted to this system, a clean rectangular wave is maintained and output ( FIG. 4A ).
  • a rising portion of a rectangle in a pulse waveform to be input deteriorates ( FIG. 4B ). This is because the pulse waveform is configured with a large number of frequency components, and the rising and falling portions of the rectangle in the pulse waveform correspond to a high-frequency component.
  • this high-frequency component deteriorates, and as a result, the rectangle of the obtained pulse waveform is not maintained in a rising shape as illustrated in FIG. 4B . Meanwhile, in other words, by observing the shape of the rising of this rectangle, characteristics of a measurement object at a higher frequency can be grasped.
  • the input waveform when measuring dynamic response characteristics in the prober device, the input waveform is shaped such that an output signal waveform becomes rectangular and signal deterioration in a transmission system of the prober device is compensated.
  • rising of a standard sample in which the rectangle is maintained with rising of an output signal of a comparative sample by using this transmission waveform it is possible to measure differences in the sample characteristics at a higher frequency.
  • FIG. 4C is a representative shape of the input waveform of which the waveform is shaped. Transmission deterioration in a portion corresponding to a rising or falling portion where deterioration is expected is corrected as a shape in which a voltage is rapidly raised or lowered to compensate for. In actual measurement, a rising amount and a rise time of the voltage of this shape are determined by the equivalent circuit simulation of the measurement system.
  • Example 2 the failure analysis by the prober device for the fine-Structured device characteristic evaluation will be described. Hereinafter, differences from Example 1 will be mainly described.
  • FIG. 5 is a configuration diagram of the prober device for the fine-Structured device characteristic evaluation of the Example.
  • the prober device for evaluating the fine-Structured device characteristics includes the probe 3 for measuring the electric characteristics and the sample stage 11 in which the sample 4 of the electronic device or the like can be installed in the vacuum chamber 7 .
  • the prober device further includes the SEM column 9 for irradiating the probe 3 and the sample 4 with the electron beam, and the secondary electron detector 10 for detecting the secondary electrons generated from the probe 3 and the sample 4 by the irradiation with the electron beam.
  • a turbo molecular pump 13 and a dry pump 14 for exhausting air in an inside thereof are provided in the vacuum chamber 7 .
  • a type of the pump is not limited, but the pump which can maintain higher vacuum and not contaminate the vacuum chamber 7 is preferable.
  • the inside of the vacuum chamber 7 is divided by a sample observation region 15 by the SEM, a sample observation region 16 by an optical microscope, and a probe exchange region 17 .
  • a sample observation region 15 by the SEM a sample observation region 15 by an optical microscope
  • a probe exchange region 17 a probe exchange region 17 .
  • the sample stage 11 is basically disposed under the SEM column 9 . Furthermore, the probe 3 is disposed between the sample stage 11 and the SEM column 9 . The number of the probes 3 is four in the Example. Then, the probe 3 is fixed to a probe driving device (not shown).
  • the probe 3 is moved to the probe exchange region 17 and the probe 3 is pulled to a probe exchange chamber 18 by using a probe lifting rod 19 such that the probe 3 can be exchanged.
  • the sample stage 11 is moved to the sample observation region 16 first by the optical microscope.
  • a first CCD camera 20 for observing the sample 4 in the top surface direction and a second CCD camera 21 for observing the sample 4 in the lateral direction are installed at the region.
  • the probe 3 is driven while observing videos of these CCD cameras 20 and 21 such that it is possible to move the probe 3 to a position in which the desired contact is present with an accuracy of approximately 0.1 mm.
  • a size of a pattern which is actually desired to be measured is often 100 nm or less in diameter. Therefore, after the above positioning, the sample stage 11 is moved to the sample observation region 15 by the SEM. Then, the probe 3 is operated while observing a SEM image such that the probe 3 is moved to a measurement position more precisely.
  • Each of the probes 3 is connected to a semiconductor parameter analyzer 12 for measuring the electric characteristics of the electronic device, the function generator 1 for generating a dynamic signal, and the oscilloscope 6 for observing a waveform of a dynamic response signal.
  • the function generator 1 has a function which can arbitrarily create the signal waveform to be generated.
  • GUI graphical user interface
  • the sample 4 is polished until a surface of a desired contact of the normal transistor is exposed.
  • the probe 3 is brought into contact with the contact.
  • the probe 3 is brought into contact with the contact of each of the source, the drain, the gate, and the substrate of the transistor.
  • the probe brought into contact with the drain and the substrate is connected to the semiconductor parameter analyzer 12 , the probe brought into contact with the gate is connected to the function generator 1 , and the probe brought into contact with the source is connected to the oscilloscope 6 .
  • a voltage of 1 V is applied to the drain and a voltage of 0 V is applied to the substrate (grounded).
  • the voltage of 1 V is applied to the gate with the frequency of 100 MHz (pulse width 5 ns) by the function generator 1 .
  • a signal from the source at this time is observed with the oscilloscope 6 .
  • the input waveform is shaped.
  • the waveform shaping a rise time of 0.7 ns is realized from a pulse shape of 100 MHz.
  • the dynamic response waveform of the transistor estimated as the defective is observed. As a result, as compared to the normal transistor, in a case where deterioration is observed in the rise time, it can be determined that the transistor is in failure and defective.
  • Example 2 a case where the input waveform is selected from the database will be described.
  • differences from Examples 1 and 2 will be mainly described.
  • FIG. 6 is a schematic diagram of the prober device for the fine-Structured device characteristic evaluation of the Example.
  • the voltage of 1 V is applied to the drain, and the voltage of 0 V is applied to the substrate.
  • the waveform is selected from a database 23 in which waveforms to be used are accumulated based on a frequency to be measured or a type of the sample. With this, an optimum input waveform is applied to the sample and the measurement of the dynamic response signal is performed by the oscilloscope 6 .
  • Example 2 a case where the input waveform is determined by using search algorithm will be described.
  • differences from Examples 1 to 3 will be mainly described.
  • FIG. 7 is a schematic diagram of the prober device for the fine-Structured device characteristic evaluation of the Example.
  • the voltage of 1 V is applied to the drain and the voltage of 0 V is applied to the substrate.
  • an output simulation waveform is derived by using an equivalent circuit simulator of the measurement system in the input waveform.
  • An optimum input waveform is determined by using the search algorithm that repeatedly corrects the simulation waveform to be input such that the waveform becomes rectangular. Performance of a simulation calculation and the search algorithm are performed by a calculation processing unit 24 that instructs the input waveform to the function generator 1 . With this, the optimized input waveform is applied to the sample, and the measurement of the dynamic response signal is performed by the oscilloscope 6 .
  • Example 2 a case where measurement of the dynamic response signal is performed while correcting the input waveform will be described.
  • differences from Examples 1 to 4 will be mainly described.
  • FIG. 8 is a schematic diagram of the prober device for the fine-Structured device characteristic evaluation of the Example.
  • the voltage of 1 V is applied to the drain and the voltage of 0 V is applied to the substrate.
  • a signal is input to the gate by being automatically repeated by the function generator 1 .
  • the output waveform from the sample 4 is repeatedly obtained, and the measurement of the dynamic response signal is performed while the input waveform is not corrected such that the waveform becomes rectangular.
  • the correction of the input waveform is performed in the calculation processing unit 24 that receives signal information from the oscilloscope 6 . By sending a corrected result from the calculation processing unit 24 to the function generator 1 , the input waveform to be generated is shaped.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
US15/737,966 2015-07-29 2016-07-07 Dynamic response analysis prober device Active 2036-07-15 US10782340B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015-149172 2015-07-29
JP2015149172 2015-07-29
PCT/JP2016/070072 WO2017018148A1 (ja) 2015-07-29 2016-07-07 動的な応答解析プローバ装置

Publications (2)

Publication Number Publication Date
US20180299504A1 US20180299504A1 (en) 2018-10-18
US10782340B2 true US10782340B2 (en) 2020-09-22

Family

ID=57884598

Family Applications (1)

Application Number Title Priority Date Filing Date
US15/737,966 Active 2036-07-15 US10782340B2 (en) 2015-07-29 2016-07-07 Dynamic response analysis prober device

Country Status (6)

Country Link
US (1) US10782340B2 (ja)
JP (1) JP6412654B2 (ja)
KR (2) KR102234251B1 (ja)
CN (1) CN108351377B (ja)
TW (1) TWI600910B (ja)
WO (1) WO2017018148A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7159312B2 (ja) * 2018-06-28 2022-10-24 株式会社日立ハイテク 半導体検査装置

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000162276A (ja) 1998-11-25 2000-06-16 Advantest Corp 半導体試験装置
US6094972A (en) * 1997-07-28 2000-08-01 Seiko Instruments Inc. Sampling scanning probe microscope and sampling method thereof
JP2001223585A (ja) 2000-02-07 2001-08-17 Advantest Corp 任意波形発生装置及びこの任意波形発生装置を備えた試験装置
US20020063213A1 (en) * 2000-11-29 2002-05-30 Takeaki Itsuji Non-contact type atomic microscope and observation method using it
US20050139781A1 (en) * 2003-12-05 2005-06-30 Eiichi Hazaki Defective product inspection apparatus, probe positioning method and probe moving method
US20070050170A1 (en) 2005-08-31 2007-03-01 Agilent Technologies, Inc. Device characteristics measuring system
US20070113630A1 (en) * 2004-06-25 2007-05-24 Japan Science And Technology Agency Probe apparatus
US20080013645A1 (en) 2006-07-14 2008-01-17 Takashi Muto Data transfer device of serializer/deserializer system
CN101119109A (zh) 2007-09-07 2008-02-06 史宝祥 一种波形整形电路
US20080149848A1 (en) * 2006-12-21 2008-06-26 Hitachi High-Technologies Corporation Sample Inspection Apparatus and Sample Inspection Method
US20090224788A1 (en) * 2008-02-15 2009-09-10 Masahiro Sasajima Apparatus for detecting defect
JP2010040953A (ja) 2008-08-08 2010-02-18 Hitachi High-Technologies Corp 検査装置
JP2010243218A (ja) 2009-04-01 2010-10-28 Toyota Motor Corp 半導体装置、並びに半導体装置の検査方法及びその検査装置
JP2011002402A (ja) 2009-06-22 2011-01-06 Yokogawa Electric Corp 半導体試験装置及び半導体試験方法
JP2013187510A (ja) 2012-03-09 2013-09-19 Hitachi High-Technologies Corp 半導体検査装置および半導体検査方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5631549B2 (ja) 2009-02-13 2014-11-26 セイコーインスツル株式会社 バッテリーの保護回路装置
JP5611661B2 (ja) * 2009-06-04 2014-10-22 株式会社東芝 磁気共鳴イメージング装置

Patent Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6094972A (en) * 1997-07-28 2000-08-01 Seiko Instruments Inc. Sampling scanning probe microscope and sampling method thereof
JP2000162276A (ja) 1998-11-25 2000-06-16 Advantest Corp 半導体試験装置
JP2001223585A (ja) 2000-02-07 2001-08-17 Advantest Corp 任意波形発生装置及びこの任意波形発生装置を備えた試験装置
US20020063213A1 (en) * 2000-11-29 2002-05-30 Takeaki Itsuji Non-contact type atomic microscope and observation method using it
US20050139781A1 (en) * 2003-12-05 2005-06-30 Eiichi Hazaki Defective product inspection apparatus, probe positioning method and probe moving method
US20090145209A1 (en) * 2004-06-25 2009-06-11 Takuya Matsumoto Probe apparatus for measuring an electron state on a sample surface
US20070113630A1 (en) * 2004-06-25 2007-05-24 Japan Science And Technology Agency Probe apparatus
CN1924600A (zh) 2005-08-31 2007-03-07 安捷伦科技有限公司 器件特性测定系统
US20070050170A1 (en) 2005-08-31 2007-03-01 Agilent Technologies, Inc. Device characteristics measuring system
JP2008022392A (ja) 2006-07-14 2008-01-31 Hitachi Ltd シリアアライザ／デシリアライザ方式の転送装置
US20080013645A1 (en) 2006-07-14 2008-01-17 Takashi Muto Data transfer device of serializer/deserializer system
US20080149848A1 (en) * 2006-12-21 2008-06-26 Hitachi High-Technologies Corporation Sample Inspection Apparatus and Sample Inspection Method
CN101119109A (zh) 2007-09-07 2008-02-06 史宝祥 一种波形整形电路
US20090224788A1 (en) * 2008-02-15 2009-09-10 Masahiro Sasajima Apparatus for detecting defect
JP2010040953A (ja) 2008-08-08 2010-02-18 Hitachi High-Technologies Corp 検査装置
US20110140729A1 (en) 2008-08-08 2011-06-16 Hitachi High-Technologies Corporation Inspection device
JP2010243218A (ja) 2009-04-01 2010-10-28 Toyota Motor Corp 半導体装置、並びに半導体装置の検査方法及びその検査装置
JP2011002402A (ja) 2009-06-22 2011-01-06 Yokogawa Electric Corp 半導体試験装置及び半導体試験方法
JP2013187510A (ja) 2012-03-09 2013-09-19 Hitachi High-Technologies Corp 半導体検査装置および半導体検査方法

Non-Patent Citations (10)

* Cited by examiner, † Cited by third party
Title
Chinese-language Office Action issued in counterpart Chinese Application No. 201680042308.X dated Dec. 24, 2019 with partial English translation (14 pages).
International Preliminary Report on Patentability (PCT/IB/338 & PCT/IB/373) issued in PCT Application No. PCT/JP2016/070072 dated Feb. 8, 2018, including English translation of Document C2 (Japanese-language Written Opinion (PCT/ISA/237)) previously filed on Dec. 19, 2017 (Eight (8) pages).
International Search Report (PCT/ISA/210) issued in PCT Application No. PCT/JP2016/070072 dated Sep. 13, 2016 with English translation (Four (4) pages).
Japanese-language Written Opinion (PCT/ISA/237) issued in PCT Application No. PCT/JP2016/070072 dated Sep. 13, 2016 (Four (4) pages).
Korean-language Office Action issued in counterpart Korean Application No. 10-2017-7037676 dated Aug. 12, 2019 with English translation (six (6) pages).
Korean-language Office Action issued in counterpart Korean Application No. 10-2017-7037676 dated Jan. 11, 2019 with English translation (10 pages).
Korean-language Office Action issued in counterpart Korean Application No. 1020177037676 dated Oct. 7, 2019 with English translation (10 pages).
Translation of JP 2001-223585 Takahashi et al (Year: 2001). *
Translation of JP 2010-243218 Morishita et al (Year: 2010). *
Translation of JP 2013-187510 Yasuhiko (Year: 2013). *

Also Published As

Publication number Publication date
JP6412654B2 (ja) 2018-10-24
TWI600910B (zh) 2017-10-01
JPWO2017018148A1 (ja) 2018-03-29
CN108351377A (zh) 2018-07-31
KR20190139323A (ko) 2019-12-17
US20180299504A1 (en) 2018-10-18
KR102234251B1 (ko) 2021-04-01
WO2017018148A1 (ja) 2017-02-02
TW201704763A (zh) 2017-02-01
KR102189053B1 (ko) 2020-12-09
KR20180014074A (ko) 2018-02-07
CN108351377B (zh) 2020-08-11

Similar Documents

Publication Publication Date Title
US20200074610A1 (en) Systems and methods of optimal metrology guidance
JP2006105960A (ja) 試料検査方法及び試料検査装置
JP7159312B2 (ja) 半導体検査装置
TWI733174B (zh) 時間相依缺陷檢測設備
TWI759628B (zh) 用於偵測快速充電裝置中時間相依缺陷的設備及方法
WO2021185939A1 (en) Method, apparatus, and system for dynamically controlling an electrostatic chuck during an inspection of wafer
KR20220037511A (ko) 멀티-빔 sem 툴들을 위한 자기-참조 건전성 모니터링 시스템
US10782340B2 (en) Dynamic response analysis prober device
WO2022207222A1 (en) On system self-diagnosis and self-calibration technique for charged particle beam systems
JP2010103320A (ja) 半導体検査装置
US20220392729A1 (en) Tool for testing an electron-optical assembly
US20110291009A1 (en) Semiconductor inspection method and device that consider the effects of electron beams
JP4537730B2 (ja) 半導体検査方法及びそのシステム
CN117015714A (zh) 在带电粒子系统中通过偏转器控制进行检查的系统和方法
WO2022023304A1 (en) Systems and methods for pulsed voltage contrast detection and capture of charging dynamics
JP2009252995A (ja) 半導体検査方法
JP2007333745A (ja) パターン形状評価方法、評価装置、及び半導体装置の製造方法
US12007408B2 (en) Method for electrically examining electronic components of an integrated circuit
US8704528B2 (en) Method and apparatus for inspecting electronic component
JP2008210987A (ja) 半導体素子の解析装置及びその解析方法
US20220244290A1 (en) Method for electrically examining electronic components of an integrated circuit
JPH0682720B2 (ja) 電子デバイスの試験装置およびその使用方法
JP2010135679A (ja) 半導体検査装置及び検査方法
KR20220137991A (ko) 하전 입자 시스템에서 하이 스루풋 결함 검사를 위한 시스템 및 방법
KR20240037969A (ko) 데이터 처리 디바이스 및 방법, 하전 입자 평가 시스템 및 방법

Legal Events

Date Code Title Description
FEPP Fee payment procedure

Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

AS Assignment

Owner name: HITACHI HIGH-TECHNOLOGIES CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KOMORI, MASAAKI;OKI, KATSUO;NARA, YASUHIKO;AND OTHERS;REEL/FRAME:044448/0346

Effective date: 20171121

STPP Information on status: patent application and granting procedure in general

Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: FINAL REJECTION MAILED

AS Assignment

Owner name: HITACHI HIGH-TECH CORPORATION, JAPAN

Free format text: CHANGE OF NAME;ASSIGNOR:HITACHI HIGH-TECHNOLOGIES CORPORATION;REEL/FRAME:052398/0249

Effective date: 20200212

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: PUBLICATIONS -- ISSUE FEE PAYMENT VERIFIED

STCF Information on status: patent grant

Free format text: PATENTED CASE

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 4