US10401615B2 - Beam dump apparatus, laser apparatus equipped with the beam dump apparatus, and extreme ultraviolet light generating apparatus - Google Patents

Beam dump apparatus, laser apparatus equipped with the beam dump apparatus, and extreme ultraviolet light generating apparatus Download PDF

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US10401615B2
US10401615B2 US15/642,745 US201715642745A US10401615B2 US 10401615 B2 US10401615 B2 US 10401615B2 US 201715642745 A US201715642745 A US 201715642745A US 10401615 B2 US10401615 B2 US 10401615B2
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laser
laser beam
dumper
stage
dump
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US20170299857A1 (en
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Yoshiaki Kurosawa
Takashi Suganuma
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Gigaphoton Inc
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Gigaphoton Inc
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/02—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
    • G02B26/023—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light comprising movable attenuating elements, e.g. neutral density filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/14—Beam splitting or combining systems operating by reflection only
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10007—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers
    • H01S3/10023—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers by functional association of additional optical elements, e.g. filters, gratings, reflectors
    • H01S3/1003—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers by functional association of additional optical elements, e.g. filters, gratings, reflectors tunable optical elements, e.g. acousto-optic filters, tunable gratings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA
    • H01S3/2316—Cascaded amplifiers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping

Definitions

  • the present disclosure is related to a beam dump apparatus, a laser apparatus equipped with the beam dump apparatus, and an extreme ultraviolet (EUV) light generating apparatus.
  • EUV extreme ultraviolet
  • microfabrication at 70 nm to 45 nm, and further, microfabrication at 32 nm or less will be in demand.
  • an extreme ultraviolet (EUV) light generating apparatus that generates extreme ultraviolet (EUV) light having a wavelength of approximately 13 nm is combined with a reduced projection reflective optic system.
  • LPP Laser Produced Plasma
  • DPP discharge Produced Plasma
  • SR Synchrotron Radiation
  • a beam dump apparatus may include:
  • a laser control unit configured to control the attenuator module and the beam dump module
  • the attenuator module including:
  • a first beam splitter provided inclined with respect to the optical axis of a laser beam at a first angle
  • a second beam splitter provided inclined with respect to the optical axis at a second angle, of which the absolute value is equal to that of the first angle and of which the sign is opposite that of the first angle;
  • a first beam dumper provided such that the laser beam which is reflected by the first beam splitter enters thereinto;
  • a second beam dumper provided such that the laser beam which is reflected by the second beam splitter enters thereinto;
  • a first stage that causes the first and second beam splitters to advance into and retreat from the optical path of the laser beam
  • the beam dump module including:
  • a third beam dumper provided such that the laser beam which is reflected by the mirror enters thereinto;
  • the laser control unit may control the first stage to selectively cause the first and second beam splitters to advance into or retreat from the optical path, and may control the second stage to selectively cause the mirror to advance into or retreat from the optical path.
  • a laser apparatus may include:
  • a master oscillator configured to output a laser beam
  • an amplifier configured to amplify the laser beam
  • the aforementioned beam dump apparatus provided along the optical path of the laser beam.
  • An extreme ultraviolet light generating apparatus configured to generate extreme ultraviolet light by a target substance, which is supplied into a plasma generating region, being irradiated by a laser beam, and may include:
  • the aforementioned laser apparatus which is configured to output the laser beam
  • a light collecting optical system configured to collect the laser beam in the vicinity of the plasma generating region
  • a target supply apparatus configured to supply the target substance in the vicinity of the plasma generating region
  • a light collecting mirror configured to collect extreme ultraviolet light emitted by plasma, which is generated by the target substance being irradiated by the laser beam.
  • FIG. 1 is a diagram that schematically illustrates an example of the configuration of an exemplary EUV light generating system of the LPP type.
  • FIG. 2 is a diagram that schematically illustrates an example of the configuration of an EUV light generating apparatus of a comparative example.
  • FIG. 3 is a diagram that schematically illustrates an example of the configuration of a laser apparatus that includes a beam dump apparatus according to a first embodiment.
  • FIG. 4 is a diagram that schematically illustrates an example of the configuration of an attenuator module according to the first embodiment.
  • FIG. 5 is another diagram that schematically illustrates an example of the configuration of the attenuator module according to the first embodiment.
  • FIG. 6 is a diagram that schematically illustrates an example of the configuration of a beam dump module according to the first embodiment.
  • FIG. 7 is another diagram that schematically illustrates an example of the configuration of the beam dump module according to the first embodiment.
  • FIG. 8 is a diagram that schematically illustrates an example of the configuration of a beam dump apparatus according to the first embodiment.
  • FIG. 9 is another diagram that schematically illustrates an example of the configuration of the beam dump apparatus according to the first embodiment.
  • FIG. 10 is another diagram that schematically illustrates an example of the configuration of the beam dump apparatus according to the first embodiment.
  • FIG. 11 is another diagram that schematically illustrates an example of the configuration of the beam dump apparatus according to the first embodiment.
  • FIG. 12 is a diagram that schematically illustrates an example of a configuration in the case that the number of attenuator modules of the first embodiment is four.
  • FIG. 13 is a diagram that illustrates an example of the configuration of a beam dump apparatus according to a second embodiment.
  • FIG. 14 is another diagram that illustrates an example of the configuration of the beam dump apparatus according to the second embodiment.
  • FIG. 15 is another diagram that illustrates an example of the configuration of the beam dump apparatus according to the second embodiment.
  • FIG. 16 is a diagram that illustrates an example of the configuration of an attenuator module according to a third embodiment.
  • FIG. 17 is another diagram that illustrates an example of the configuration of the attenuator module according to the third embodiment.
  • FIG. 18 is a diagram that illustrates an example of the configuration of a beam dump apparatus according to the third embodiment.
  • FIG. 19 is another diagram that illustrates an example of the configuration of the beam dump apparatus according to the third embodiment.
  • FIG. 20 is a diagram that schematically illustrates an example of the configuration of a laser apparatus according to a fourth embodiment.
  • FIG. 21 is a diagram that schematically illustrates an example of the configuration of a beam dump apparatus according to a fifth embodiment.
  • FIG. 22 is a diagram that schematically illustrates an example of the configuration of a frame according to the fifth embodiment.
  • FIG. 23 is a diagram that schematically illustrates an example of the configuration of a first modification to the beam dump apparatus according to the fifth embodiment.
  • FIG. 24 is a diagram that schematically illustrates an example of the configuration of a second modification to the beam dump apparatus according to the fifth embodiment.
  • FIG. 25 is a diagram that schematically illustrates an example of the configuration of a beam dump apparatus according to a sixth embodiment.
  • FIG. 26 is a diagram that schematically illustrates an example of the configuration of a modification to the beam dump apparatus according to the sixth embodiment.
  • FIG. 27 is a diagram that illustrates an example of a cross sectional profile image of the sixth embodiment.
  • the embodiments of the present disclosure may be related to a beam dump apparatus which is employed in an EUV light generating apparatus, a laser apparatus equipped with the beam dump apparatus, and an EUV light generating apparatus.
  • a “droplet” may be a droplet of a molten target material.
  • the shape of the droplet may be substantially spherical.
  • a “plasma generating region” may be a three dimensional space which is set in advance as a space in which plasma is generated.
  • the term “upstream” as it relates to a laser beam may refer to a side closer to a light source than a target position along a propagation path of the laser beam.
  • downstream as it relates to a laser beam may refer to a side farther from a light source than a target position along a propagation path of the laser beam.
  • FIG. 1 is a diagram that schematically illustrates an example of the configuration of an exemplary EUV light generating system of the LPP type.
  • An EUV light generating apparatus 1 may be employed with at least one laser apparatus 3 .
  • a system that includes the EUV light generating apparatus 1 and the laser apparatus 3 is referred to as an EUV light generating system 11 .
  • the EUV light generating apparatus 1 may include a chamber 2 and a target supply unit 26 .
  • the chamber 2 may be capable of being sealed.
  • the target supply unit 26 may be mounted on the chamber 2 so as to penetrate through a wall of the chamber 2 , for example.
  • the material which is supplied by the target supply unit 26 as a target substance may include, but is not limited to, tin, terbium, gadolinium, lithium, xenon, or any combination including two or more thereof.
  • a wall of the chamber 2 may have at least one aperture penetrating therethrough.
  • a window 21 may be provided at the aperture.
  • a pulsed laser beam 32 which is output from the laser apparatus 3 may be transmitted through the window 21 .
  • An EUV light collecting mirror 23 having a spheroidal reflective surface may be provided in the chamber 2 , for example.
  • the EUV light collecting mirror 23 may have a first focal point and a second focal point.
  • the surface of the EUV light collecting mirror 23 may have a multi layered reflective film, in which molybdenum layers and silicon layers are alternately laminated, formed thereon, for example.
  • the EUV light collecting mirror 23 may be provided such that the first focal point thereof is positioned in a plasma generating region 25 and the second focal point thereof is positioned at an intermediate focal (IF) point 292 , for example.
  • the EUV light collecting mirror 23 may have an aperture 24 formed at the center thereof, and a pulsed laser beam 33 may pass through the aperture 24 .
  • the EUV light generating apparatus 1 may further include an EUV light generation control unit 5 , a target sensor 4 , etc.
  • the target sensor 4 may have an image capturing function and may detect the presence, the trajectory, the position, the velocity, etc. of a target 27 .
  • the EUV light generating apparatus 1 may include a connecting portion 29 that enables the interior of the chamber 2 to be in communication with the interior of an exposure apparatus 6 .
  • a wall 291 having an aperture 293 formed therethrough may be provided in the connecting portion 29 .
  • the wall 291 may be provided such that the aperture 293 is positioned at the second focal point of the EUV light collecting mirror 23 .
  • the EUV light generating apparatus 1 may additionally include a laser beam propagation direction control unit 34 , a laser beam collecting mirror 22 , and a target collecting unit 28 for collecting the target 27 .
  • the laser beam propagation direction control unit 34 may be equipped with an optical element for regulating the propagation direction of a laser beam, and an actuator for adjusting the position, orientation, etc. of the optical element.
  • the pulsed laser beam 31 which is output from the laser apparatus 3 may propagate via the laser beam propagation direction control unit 34 , be transmitted through the window 21 as a pulsed laser beam 32 , and then enter the chamber 2 .
  • the pulsed laser beam 32 may propagate through the chamber 2 along at least one laser beam path, be reflected by the laser beam collecting mirror 22 , and be irradiated onto at least one target 27 as the pulsed laser beam 33 .
  • the target supply unit 26 may be configured to output the target 27 toward the plasma generating region 25 in the interior of the chamber 2 .
  • At least one pulse which is included in the pulsed laser beam 33 may be irradiated onto the target 27 .
  • the target 27 which is irradiated by the pulsed laser beam turns into plasma, and radiant light 251 is emitted from the plasma.
  • EUV light 252 which is included in the radiant light 251 , may be selectively reflected by the EUV light collecting mirror 23 .
  • EUV light 252 which is reflected by the EUV light collecting mirror 23 may be focused at the intermediate focal point 292 , and output to the exposure apparatus 6 . Note that a plurality of pulses which are included in the pulsed laser beam 33 may be irradiated onto a single target 27 .
  • An EUV light generation control unit 5 may be configured to totally control the entire EUV light generating system 11 .
  • the EUV light generation control unit 5 may be configured to process image data of the target 27 captured by the target sensor 4 or the like.
  • the EUV light generation control unit 5 may be configured to control the timing at which the target 27 is output, the output direction of the target 27 , etc., for example.
  • the EUV light generation control unit 5 may control at least one of the oscillation timing of the laser apparatus 3 , the propagation direction of the pulsed laser beam 32 , and the focal position of the pulsed laser beam 33 , for example.
  • the above items which are controlled are merely examples, and other additional items may be controlled as necessary.
  • FIG. 2 is a diagram that schematically illustrates an example of the configuration of the EUV light generating apparatus of the comparative example.
  • the EUV light generating apparatus illustrated in FIG. 2 may include a chamber 2 , a laser apparatus 3 , a laser propagation direction control unit 34 , and an EUV light generation control unit 5 in a manner similar to the EUV light generating apparatus 1 illustrated in FIG. 1 .
  • the laser apparatus 3 may include a master oscillator MO, one or more amplifiers PA 1 ⁇ PA 3 , a laser control unit 41 , and a beam dump apparatus 1000 .
  • the amplifiers PA 1 ⁇ PA 3 may be provided along the optical path of a laser beam 31 which is output by the master oscillator MO.
  • the master oscillator MO and the amplifiers PA 1 ⁇ PA 3 may be connected to the laser control unit 41 .
  • the laser control unit 41 may be connected to the EUV light generation control unit 5 .
  • the beam dump apparatus 1000 may be provided such that it is movable between a cutoff position at which the laser beam 31 is cut off, and a standby position at which the laser beam 31 is not cut off.
  • the beam dump apparatus 1000 may be connected to a cooling apparatus 190 .
  • the cooling apparatus 190 may decrease the temperature of a cooling medium.
  • the cooled cooling medium may circulate between the beam dump apparatus 1000 and the cooling apparatus 190 .
  • the chamber 2 may include a target supply unit 26 , a target sensor 4 , a window 21 , a laser collecting optical system 50 , a plate 54 , an EUV light collecting mirror 23 , and a target collecting unit 28 .
  • a laser beam 32 which is output from the laser beam propagation direction control unit 34 may be input to the laser collecting optical system 50 via the window 21 .
  • the laser collecting optical system 50 may be configured and provided such that laser beam 33 is collected in a plasma generating region 25 .
  • the laser collecting optical system 50 may include a laser beam collecting mirror 22 .
  • the laser beam collecting mirror 22 may be an off axis parabolic mirror.
  • the laser collecting optical system 50 may further include a convex mirror 51 that faces the laser beam collecting mirror 22 .
  • the convex mirror 51 may be an ellipsoidal mirror.
  • the laser collecting optical system 50 may be fixed on a movable plate 52 .
  • a laser beam manipulator 53 may be connected to the movable plate 52 .
  • the laser beam manipulator 53 may be capable of moving the movable plate 52 in the directions of the X axis, the Y axis, and the Z axis, such that the focal position of the laser beam 33 can be moved to positions which are specified by the EUV light generation control unit 5 .
  • a dumper mirror 57 may be provided along a laser beam path downstream from the plasma generating region 25 .
  • the dumper mirror 57 may be configured to reflect the laser beam 33 which has passed through the plasma generating region 25 toward a beam dump apparatus 5000 .
  • the dumper mirror 57 may collimate the laser beam 33 that enters thereinto.
  • the dumper mirror 57 may be an off axis parabolic mirror.
  • the dumper mirror 57 may be equipped with a heater that heats the reflecting surface thereof to the melting point of the target substance or greater.
  • the beam dump apparatus 5000 may be provided at a position at which a laser beam 60 reflected by the dumper mirror 57 enters thereinto.
  • the laser beam 60 may enter the beam dump apparatus 5000 via a dumper window 58 provided within a wall of the chamber.
  • the beam dump apparatus 5000 may be connected to a cooling apparatus 590 .
  • the cooling apparatus 590 may have the same configuration as that of the cooling apparatus 190 .
  • the cooling apparatus 190 may be employed in common by the beam dump apparatus 5000 and the beam dump apparatus 1000 , instead of providing the cooling apparatus 590 .
  • the EUV light generation control unit 5 may cause the target supply unit 26 to output the target 27 according to EUV light output commands from an exposure apparatus 6 .
  • the beam dump apparatus 1000 may be in the standby position.
  • the target sensor 4 may detect the target 27 , and output detection signals to the EUV light generation control unit 5 .
  • the target detection signals may indicate the timings at which the target 27 passes through a predetermined position.
  • the EUV light generation control unit 5 may output light emission triggers, which are delayed for a predetermined delay time from the target detection signals, to the laser control unit 41 of the laser apparatus 3 .
  • the laser control unit 41 may output laser output signals to the master oscillator MO when the light emission triggers are input thereto. At this time, the laser control unit 41 may set the amplifiers PA 1 ⁇ PA 3 in a standby state capable of amplification.
  • the master oscillator MO may output the laser beam 31 in synchronization with the laser output signals.
  • the output laser beam 31 may be amplified by the amplifiers PA 1 ⁇ PA 3 , pass through the laser beam propagation direction control unit 34 and the window 21 , and enter the chamber 2 .
  • the power of the laser beam 31 which is output from the laser apparatus 3 may be within a range from several kW (kilowatts) to several tens of kW.
  • the laser beam 32 that enters the chamber 2 may be collected by the laser collecting optical system 50 .
  • the collected laser beam 33 may be irradiated onto the target 27 which has reached the plasma generating region 25 .
  • EUV light 252 may radiate from plasma, which is generated by the target 27 being irradiated by the laser beam 33 .
  • the EUV light generation control unit 5 may adjust the position onto which the laser beam 33 is irradiated, by controlling the laser beam manipulator 53 . In addition, the EUV light generation control unit 5 may change the amount of delay time from the target detection signals to the light emission triggers.
  • the irradiation diameter of the laser beam 33 with respect to the target 27 may be greater than the diameter of the target 27 . In this case, a portion of the laser beam 33 may enter the dumper mirror 57 without being irradiated on the target 27 .
  • the laser beam 60 which is reflected by the dumper mirror 57 may be absorbed by the beam dump apparatus 5000 via the dumper window 58 .
  • the absorbed laser beam 60 may be converted into heat.
  • the heat generated in this manner may be exhausted to the exterior by the cooling apparatus 590 .
  • the target 27 is not irradiated by the laser beam 33 .
  • the output of the laser beam 31 is continued while supply of the target 27 is ceased when stabilizing the output of the laser apparatus 3 or adjusting the optical path, or cases in which the target 27 is intentionally prevented from being irradiated by the laser beam 33 by changing the delay time.
  • the laser beam 33 may enter the dumper mirror 57 while maintaining its power, due to not being irradiated onto the target 27 .
  • the beam dump apparatus 1000 may be positioned in the cutoff position in the case that the operation of the EUV light generation apparatus is ceased for a long period of time or during maintenance.
  • the laser control unit 41 may control the master oscillator MO and the amplifiers PA 1 ⁇ PA 3 such that the power of the laser beam 31 which is output from the laser apparatus 3 becomes several W.
  • adjustment of the laser beam propagation direction control unit 34 or the laser collecting optical system 50 will be referred to as “laser beam optical path adjustment”.
  • the thermal load exerted onto optical components within the laser apparatus 3 may be different corresponding to pulse energies. That is, changes in the properties of the optical components caused by heat may differ during laser beam optical path adjustment and during output of EUV light. For this reason, the beam divergence and the cross sectional intensity distribution of the laser beam 31 may differ during laser beam optical path adjustment and during output of EUV light. This is presumed to be because the thermal lens effect of the optical components depends on thermal loads.
  • increased output of the EUV light 252 may be required in order to improve the throughput of the exposure apparatus 6 .
  • Increased output of the laser beam 31 may be required to increase the output of the EUV 252 .
  • the capacity of the beam dump apparatus 1000 that receives the laser beam 31 and the capacity of the beam dump apparatus 5000 that receives the laser beam 33 are desired to be increased.
  • the beam dump apparatus 5000 may be mounted on the outer wall of the chamber 2 , as illustrated in FIG. 2 .
  • a great number of devices, such as various measuring apparatuses, may be mounted on the outer wall of the chamber 2 in addition to the beam dump apparatus 5000 .
  • the area of the outer wall of the chamber 2 is limited. For this reason, there are cases in which mounting of devices including the beam dump apparatus 5000 on the outer wall of the chamber 2 will become difficult, if the size of the beam dump apparatus 5000 increases accompanying an increase in the capacity thereof.
  • the following embodiments are examples of beam dump apparatuses which are capable of laser beam optical path adjustment employing a laser beam having the same beam divergence and cross sectional intensity distribution as that during EUV light output, as well as laser apparatuses and EUV light generating apparatuses equipped with such beam dump apparatuses.
  • the following embodiments are also examples of beam dump apparatuses which are easily mounted on the outer wall of the chamber 2 even if the capacities thereof are increased.
  • FIG. 3 is a diagram that schematically illustrates an example of the configuration of a laser apparatus that includes a beam dump apparatus according to the first embodiment.
  • the laser apparatus 3 may be equipped with a laser control unit 41 , a master oscillator MO, amplifiers PA 1 ⁇ PA 3 , a beam dump apparatus 100 , and a cooling apparatus 190 .
  • the beam dump apparatus 100 may include one or more attenuator modules 110 and 120 , and a beam dump module 130 .
  • the attenuator modules 110 and 120 and the beam dump module 130 may be connected to the cooling apparatus 190 such that a cooling medium such as water, which is supplied from the cooling apparatus 190 , is capable of circulating therethrough.
  • the laser control unit 41 may be connected to each of the attenuator modules 110 and 120 as well as the beam dump module 130 . Specifically, the laser control unit 41 may be connected to a uniaxial stage of each module. The uniaxial stages will be described later.
  • FIG. 4 and FIG. 5 are diagrams that schematically illustrate examples of the configuration of each attenuator module.
  • FIG. 4 illustrates a case in which a movable plate of each attenuator module is in a low output arrangement (first position)
  • FIG. 5 illustrates a case in which the movable plate of each attenuator module is in a high output arrangement (second position).
  • the attenuator modules 110 and 120 may be equipped with an even number of beam splitters 102 A and 102 B, a plurality of beam dumpers 104 A and 104 B, a movable plate 105 A, a base plate 107 k and a uniaxial stage 106 A.
  • the even number of beam splitters 102 A and 102 B may be provided such that the incident angles of a laser beam 30 that enters thereinto are crossed.
  • the beam splitters 102 A and 102 B may be provided such that an incident angle ⁇ 2 into the beam splitter 102 B is ⁇ 45° in the case that an incident angle ⁇ 1 into the beam splitter 102 A is 45°.
  • Each of the beam splitters 102 A and 102 B may be constituted by a substrate formed by zinc selenide (ZnSe), diamond, or the like.
  • a coating having an appropriate reflectance may be administered on the surface of the substrate into which the laser beam 30 enters.
  • an antireflection film may be coated on the surface of the substrate from which the laser beam 30 is output.
  • the coatings may be multiple layer films.
  • the substrate may be a plane parallel substrate or may be a wedge substrate.
  • the beam splitters 102 A and 102 B may be held by splitter holders 103 A and 103 B, respectively.
  • Each of the splitter holders 103 A and 103 B may fix each of the beam splitters 102 A and 102 B to the movable plate 105 A such that the inclinations thereof with respect to the propagation direction of the laser beam 30 are maintained.
  • Channels 103 a and 103 b through which the cooling medium supplied from the cooling apparatus 190 pass, may be respectively provided in the interiors of each of the splitter holders 103 A and 103 B.
  • Each of the beam dumpers 104 A and 104 B may be provided at positions at which light beams 30 a and 30 b , respectively reflected by the beam splitter 102 A and 102 B, enter thereinto.
  • Commercially available beam dumpers may be employed as the beam dumpers 104 A and 104 B.
  • a cone portion 104 c and a corrugated portion 104 b may be provided in the interiors of each of the beam dumpers 104 A and 104 B.
  • the cone portion 104 c may be a conically shaped portion.
  • the cone portion 104 c may be of a shape that absorbs a portion of an incident laser beam 30 a or 30 b and diffuses a portion of the incident laser beam 30 a or 30 b toward the periphery.
  • the corrugated portion 104 b may be of a shape that suppresses diffusion of the laser beam 30 a or 30 b , which has been diffused by the cone portion 104 c , to the exterior of the beam dumpers 104 A and 104 B.
  • the corrugated portion 104 b may absorb the laser beam 30 a or 30 b , which has been diffused by the cone portion 104 c.
  • Channels 104 a through which the cooling medium supplied from the cooling apparatus 190 passes, may be provided in the interior of each of the beam dumpers 104 A and 104 B.
  • the channels 104 a may be provided under the surfaces of the cone portion 104 c and the corrugated portion 104 b in the vicinity of the surfaces.
  • the channels 104 a may be in communication with the channels 103 a and 103 b within the interiors of the splitter holders 103 A and 103 B.
  • the uniaxial stage 106 A may be fixed to the base plate 107 A.
  • the uniaxial stage 106 A may be capable of moving the movable plate 105 A with respect to the base plate 107 A.
  • the uniaxial stage 106 A may be constituted by a combination of a ball screw and a motor, an extendable and retractable air cylinder, or the like.
  • Each of the beam splitters 102 A and 102 B as well as each of the beam dumpers 104 A and 104 B may be cooled by the cooling medium supplied from the cooling apparatus 190 circulating therethrough.
  • the uniaxial stage 106 A may move the movable plate 105 A according to signals from the laser control unit 41 .
  • the positions of the movable plate 105 A may include the low output arrangement (first position) illustrated in FIG. 4 and the high output arrangement (second position) illustrated in FIG. 5 .
  • the beam splitters 102 A and 102 B may be provided along the optical path of the laser beam 30 .
  • Each of the beam splitters 102 A and 102 B may transmit a portion of the laser beam 30 and reflect portions of the laser beam as reflected beams 30 and 30 b .
  • the laser beam 30 of which the energy has been reduced, may be output from the attenuator module 110 or 120 .
  • the reflected beams 30 a and 30 b may enter the beam dumper 104 A and 104 B, respectively.
  • Each of the beam dumpers 104 A and 104 B may convert the incident reflected beams 30 a and 30 b into heat.
  • the heat generated at each of the beam dumpers 104 A and 104 B may be exhausted by the cooling apparatus 190 using the cooling medium.
  • the beam splitters 102 A and 102 B may be provided outside the optical path of the laser beam 30 .
  • the laser beam may be output from the attenuator module 110 or 120 without the energy thereof being reduced.
  • FIG. 6 and FIG. 7 are diagrams that schematically illustrate examples of the configuration of the beam dump module.
  • FIG. 6 illustrates a case in which a movable plate of the beam dump module is in a laser beam cutoff arrangement (third position)
  • FIG. 7 illustrates a case in which the movable plate of the beam dump module is in a laser beam output arrangement (fourth position).
  • the beam dump module 130 may be equipped with a high reflectance mirror 102 C, a beam dumper 104 C, a movable plate 105 C, a base plate 107 C, and a uniaxial stage 106 C.
  • the high reflectance mirror 102 C may be a copper substrate on which a gold coating is administered, or may be a silicon substrate coated with a high reflectance multiple layer film.
  • the high reflectance mirror 102 C may be held by a mirror holder 103 C.
  • the mirror holder 103 C may be equipped with the same structures as those of the splitter holders 103 A and 103 B.
  • the mirror holder 103 C may hold the high reflectance mirror 102 C such that a reflected beam 30 c reflected thereby enters the beam dumper 104 C.
  • the mirror holder 103 C may be fixed to the movable plate 105 C.
  • the other structures of the beam dump module 130 may be the same as those of the attenuator modules 110 and 120 .
  • the uniaxial stage 106 C may move the movable plate 105 C according to signals from the laser control unit 41 .
  • the positions of the movable plate 105 C may include the laser beam cutoff arrangement (third position) illustrated in FIG. 6 , and the laser beam output arrangement (fourth position) illustrated in FIG. 7 .
  • the high reflectance mirror 102 C may be provided along the optical path of the laser beam 30 .
  • the reflected beam 30 c reflected by the high reflectance mirror 102 C may enter the beam dumper 104 C.
  • the laser beam 30 may be cut off, and a laser beam 31 may not be output from the beam dump module 130 .
  • the high reflectance mirror 102 C may be provided outside the optical path of the laser beam 30 .
  • the laser beam 30 may not be cut off, and be output from the beam dump module 130 as the laser beam 31 .
  • FIG. 8 through FIG. 11 are diagrams that illustrate examples of the configuration of the beam dump apparatus 100 illustrated in FIG. 3 .
  • the beam dump apparatus 100 may be equipped with the attenuator modules 110 and 120 (refer to FIG. 4 and FIG. 5 ), and the beam dump module 130 (refer to FIG. 6 and FIG. 7 ).
  • the specifications of the beam splitters 102 A and 102 B as well as the beam dumpers 104 A ⁇ 104 C in the case that the output of the laser apparatus 3 is 20 kW will be described as an example.
  • the attenuator modules 110 and 120 may be of the same configuration.
  • the specifications may be as follows.
  • beam dumpers 104 A ⁇ 104 C In the case that the specifications are those described above, commercially available beam dumpers having capacities of 10 kW or 1 kW may be utilized as the beam dumpers 104 A ⁇ 104 C.
  • FIG. 8 is a diagram that schematically illustrates an example of the arrangements within each module when the laser beam is being cut off.
  • the laser control unit 41 may receive a laser beam cutoff signal from the EUV light generation control unit 5 , for example.
  • the laser beam cutoff signal may be a signal that commands that output of the laser beam 31 from the laser apparatus 3 be ceased.
  • the laser control unit 41 may place the attenuator modules 110 and 120 in the low output arrangement and set the beam dump module 130 to be in the laser beam cutoff arrangement, as illustrated in FIG. 8 .
  • the laser control unit 41 may control the uniaxial stages 106 A and 106 C of each of the modules to set the modules in these arrangements.
  • the laser beam 30 may enter the beam splitters 102 A and 102 B of each of the attenuator modules 110 and 120 and the high reflectance mirror 102 C. At this time, the power of the laser beam 30 is reduced by the beam splitters 102 A and 102 B of each of the attenuator modules 110 and 120 . Thereafter, the laser beam 30 which is output from the attenuator module 120 is shifted away from an optical path for output by the high reflectance mirror 120 C.
  • the reflected beams 30 a ⁇ 30 c which are reflected by the beam splitters 102 A and 102 B and the high reflectance mirror 102 C may respectively enter the beam dumpers 104 A ⁇ 104 C.
  • the energy that enters each of the beam dumpers 104 A ⁇ 104 C are as follows.
  • the beam dump apparatus 100 may cut off the 20 kW laser beam.
  • FIG. 9 is a diagram that schematically illustrates an example of the arrangements within each module when the laser beam is being output (during output of EUV light, for example).
  • the laser control unit 41 may receive a laser beam output signal from the EUV light generation control unit 5 , for example.
  • the laser beam output signal may be a signal that commands output of the laser beam 31 from the laser apparatus 3 .
  • the laser control unit 41 may place the attenuator modules 110 and 120 in the high output arrangement and set the beam dump module 130 to be in the laser beam output arrangement, as illustrated in FIG. 9 .
  • the laser control unit 41 may control the uniaxial stages 106 A and 106 C of each of the modules to set the modules in these arrangements.
  • the laser beam 30 may be output from the beam dump apparatus 100 without entering the beam splitters 102 A and 102 B and the high reflectance mirror 102 C.
  • a 20 kW laser beam 30 may be output from the beam dump apparatus 100 as is, as a 20 kW laser beam 31 , during laser beam output.
  • FIG. 10 is a diagram that schematically illustrates an example of the arrangements within each module when the optical path of the laser beam is being adjusted.
  • the laser control unit 41 may receive a laser beam optical path adjustment signal from the EUV light generation control unit 5 , for example.
  • the laser beam optical path adjustment signal may be a signal that commands or notifies execution of laser beam optical path adjustment.
  • the laser control unit 41 may place the attenuator modules 110 and 120 in the low output arrangement and set the beam dump module 130 to be in the laser beam output arrangement, as illustrated in FIG. 10 .
  • the laser control unit 41 may control the uniaxial stages 106 A and 106 C of each of the modules to set the modules in these arrangements.
  • the power of the laser beam 30 is reduced by the beam splitters 102 A and 102 B of each of the attenuator modules 110 and 120 .
  • the laser beam 30 may enter a beam delivery system 34 provided at a later stage as the laser beam 31 .
  • the power of the laser beam 31 which is output from the beam dump apparatus 100 may be 6.7 kW.
  • a 20 kW laser beam 30 is output from the beam dump apparatus 100 as a 6.7 kW laser beam 31 , for example.
  • FIG. 11 is a diagram that schematically illustrates an example of the arrangements within each module when the power of the laser beam is adjusted employing the beam dump apparatus.
  • the laser control unit 41 may receive a laser beam output adjustment signal from the EUV light generation control unit 5 , for example.
  • the laser beam output adjustment signal may be a signal that commands adjustment (reduction) of the power of the laser beam 31 to be output by the laser apparatus 3 .
  • the power after adjustment may be a predetermined power which is specified by the EUV light generation control unit 5 .
  • the predetermined power which is specified by the EUV light generation control unit 5 may be 6.7 kW, for example.
  • the laser control unit 41 may place the attenuator module 110 in the low output arrangement, place the attenuator module 120 in the high output arrangement, and set the beam dump module 130 to be in the laser beam output arrangement, as illustrated in FIG. 11 .
  • the laser control unit 41 may control the uniaxial stages 106 A and 106 C of each of the modules to set the modules in these arrangements.
  • the power of the laser beam 30 is reduced by the beam splitters 102 A and 102 B of each of the attenuator modules 110 and 120 .
  • the laser beam 30 may enter the beam delivery system 34 provided at a later stage as the laser beam 31 .
  • a 20 kW laser beam 30 is output from the beam dump apparatus 100 as a 6.7 kW laser beam 31 , for example.
  • the power of the laser beam 30 is reduced by the plurality of beam splitters 102 A and 102 B of the attenuator modules 110 and 120 .
  • Unnecessary reflected beams which are generated accompanying the reduction in power are distributed among a plurality of beam dumpers.
  • the capacity of each of the beam dumpers 104 A ⁇ 104 C that receive the reflected beams 30 a ⁇ 30 c which are reflected by the beam splitters 102 A and 102 B and the high reflectance mirror 102 C can be small.
  • the even number of beam splitters 102 A and 102 B in each of the attenuator modules 110 and 120 may be provided such that the incident angles of the laser beam 30 that enters thereinto are crossed.
  • shifts between the optical axis of the laser beam 30 that enters each of the attenuator modules 110 and 120 and the optical axis of the laser beam 30 which is output from each of the attenuator modules 110 and 120 can be suppressed.
  • providing the attenuator modules in multiple steps is facilitated.
  • arbitrary power reduction rates can be easily realized.
  • individual attenuator modules 110 and 120 may select a high output arrangement (without attenuation) and a low output arrangement (with attenuation). For this reason, by controlling the state of arrangement of each of the attenuator modules 110 and 120 , the power of the laser beam 31 which is output from the laser apparatus 3 may be adjusted to a desired power. For example, a laser beam 30 having a power of several tens of kW which is output from the final stage amplifier PA 3 may be attenuated to a laser beam 31 having a power of several W and output.
  • the outputs of the master oscillator MO and the amplifiers PA 1 ⁇ PA 3 may be the same as the outputs thereof during EUV light output, even during adjustment of the laser beam optical path.
  • the thermal load on optical elements from the master oscillator MO through the amplifier PA 3 may be equivalent to the thermal load during EUV light output.
  • the beam divergence and the cross sectional intensity distribution of the laser beam 31 during adjustment of the optical path of the laser beam will be substantially equivalent to those during EUV light output.
  • the optical path, etc. of the laser beam 32 during EUV light output can be appropriately adjusted, and irradiation of the target 27 by the laser beam 33 can be stabilized.
  • the energy of the reflected beam 30 c that enters the beam dumper 104 C of the beam dump module 130 can be decreased.
  • a beam dumper having a comparatively small capacity may be utilized as the beam dumper 104 C, even in cases that a laser beam 30 having a comparatively high energy of approximately several tens of kW is output from the final stage amplifier PA 3 .
  • a commercially available beam dumper may be utilized.
  • commercially available beam dumpers may be utilized as each of the beam dumpers 104 A ⁇ 104 C. Therefore, compatibility with increased output can be achieved at low cost.
  • each of the attenuator modules 110 and 120 receive input of a 20 kW laser beam 30 and output a 6.7 kW laser beam 30 .
  • the present disclosure is not limited to such an example. That is, the reflectances of the beam splitters 102 A and 102 B of each of the attenuator modules 110 and 120 may be selected as appropriate.
  • the number of stages of the attenuator modules 110 and 120 is not limited to the two stages in the example described above. That is, three or more stages of attenuator modules may be provided. The number of stages of attenuator modules and the reflectances of the beam splitters 102 A and 102 B may be adjusted to configure the beam dump apparatus to be capable of outputting laser beams 31 at several stages of energy.
  • FIG. 12 is a diagram that schematically illustrates an example of a configuration in the case that the number of attenuator modules is four.
  • the reflectance of each beam splitter 102 A and 102 B of each of attenuator modules 110 , 120 , 140 , and 150 may be determined according to a plurality of power values required of the laser beam 31 .
  • any one of the beam dumpers 104 A ⁇ 104 C of each module may be replaced with a power meter, a beam profiler equipped with a collecting optical system, etc.
  • the beam dumper 104 B of the attenuator module 110 may be replaced with a power meter 104 D.
  • the beam dumper 104 B of the attenuator module 150 may be replaced with a beam profiler 104 E.
  • the power meter 104 D and the beam profiler 104 E may be respectively connected to the laser control unit 41 .
  • the laser control unit 41 may control the uniaxial stage 106 A of each of the attenuator modules 110 , 120 , 140 , and 150 . Thereby, laser beams 31 of various powers may be output from the beam dump apparatus 100 .
  • the output signals from the power meter 104 D and the beam profiler 104 E may be input to the laser control unit 41 .
  • the laser control unit 41 may display the value of the power of the laser beam 31 to an operator while adjusting the optical path of the laser beam and while the laser beam is being cut off.
  • the displayed power values may be calculated by the laser control unit 41 based on the output signals from the power meter 104 D.
  • the laser control unit 41 may calculate the power value employing the power reduction rates of the beam splitters 102 A and 102 B.
  • the laser control unit 41 may display the profile of the laser beam 31 to the operator while adjusting the optical path of the laser beam and while the laser beam is being cut off.
  • the displayed profile may be calculated by the laser control unit 41 based on the output signals from the beam profiler 104 E.
  • the operator may adjust the optical path of the laser beam 31 based on the displayed power value and the displayed profile.
  • the laser control unit 41 may be equipped with a display for displaying the power value and the profile.
  • the laser apparatus 3 may be equipped with a mechanism for adjusting the positions and orientations of optical elements which are provided along the optical path of the laser beam 30 from the master oscillator MO through the amplifier PA 3 .
  • the laser control unit 41 may control the positions and orientations of the optical elements while adjusting the optical path of the laser beam and while the laser beam is being cut off, based on the output signals from the power meter 104 D and the beam profiler 104 E.
  • FIG. 13 through FIG. 15 are diagrams that schematically illustrate examples of the configuration of the beam dump apparatus according to the second embodiment.
  • FIG. 13 is a plan view of a beam dump apparatus 200 .
  • FIG. 14 and FIG. 15 are side views of the beam dump apparatus 200 .
  • FIG. 13 and FIG. 14 are diagrams that schematically illustrate examples of the arrangements within each module when a laser beam is being cut off.
  • FIG. 15 is a diagram that schematically illustrates an example of the arrangements within each module when the laser beam is being output (during output of EUV light, for example).
  • the beam dump apparatus 200 may include one or more attenuator modules 210 and 220 , and a beam dump module 230 .
  • Uniaxial stages 206 A and 206 C of each of the modules may be respectively fixed to a base plate 107 A or 107 C.
  • Each of the uniaxial stages 206 A and 206 C may move a movable plate 105 A or 105 C with respect to the base plate 107 A or 107 C in directions different from those of the first embodiment.
  • the uniaxial stages 206 A and 206 C may respectively move the movable plates 105 A and 105 C in a direction of movement perpendicular to the optical element mounting planes of the base plates 107 A and 107 C, as illustrated in FIG. 14 and FIG. 15 .
  • This direction of movement may be the direction of gravity.
  • Each of the movable plates 105 A and 105 C may be guided by linear guides 206 a and 206 c that extend in directions parallel to the direction of movement of the uniaxial stages 206 A and 206 C.
  • the laser control unit 41 may place the movable plates 105 A of each of the attenuator modules 210 and 220 in a low output arrangement (first position), and place the movable plate 105 C of the beam dump module 230 in a laser beam cutoff arrangement (third position), as illustrated in FIG. 13 and FIG. 14 .
  • the laser control unit 41 may place the movable plates 105 A of each of the attenuator modules 210 ad 220 in a high output arrangement (second position), and place the movable plate 105 C of the beam dump module 230 in a laser beam output arrangement (fourth position), as illustrated in FIG. 15 .
  • the linear guides 206 a and 206 c of each module may regulate the movements of the movable plates 105 A and 105 C such that the movable plates 105 A and 105 C translate in the directions of movement. Thereby, the angles of the optical element mounting planes of the movable plates 105 A and 105 C with respect to the angles of the optical element mounting planes of the base plates 107 A and 107 C may be maintained prior to and following movement of the movable plates 105 A and 105 C.
  • FIG. 16 and FIG. 17 are diagrams that schematically illustrate examples of the configuration of an attenuator module according to the third embodiment. At least one of the plurality of attenuator modules which are mounted within the beam dump apparatus 100 may be replaced with the attenuator module 310 illustrated in FIG. 16 .
  • the attenuator module 310 may be capable of continuously changing the power of the laser beam 30 which is output therefrom.
  • the attenuator module 310 may be equipped with two inner rotatable stages 311 A and 311 B and two outer rotatable stages 312 A and 312 B, in addition to the beam splitters 102 A and 102 B and the beam dumpers 104 A and 104 B.
  • the inner rotatable stages 311 A and 311 B and the outer rotatable stages 312 A and 312 B may be mounted on the movable plate 105 A.
  • the movable plate 105 A may be capable of being moved between a low output arrangement (first position) and a high output arrangement (second position) by a uniaxial stage 106 A, which is the same as that of the first embodiment.
  • the movement of the movable plate 105 A may be guided by linear guides 306 a that extend in a direction parallel to the direction of movement of the uniaxial stage 106 A.
  • the inner rotatable stage 311 A may be rotatable about a rotational axis that passes through the center thereof.
  • the beam splitter 102 A may be fixed to the inner rotatable stage 311 A employing the splitter holder 103 A. At this time, the beam splitter 102 A may be fixed to the inner rotatable stage 311 A such that the rotational axis of the inner rotatable stage 311 A is positioned at the plane of the beam splitter 102 A into which the laser beam 30 enters.
  • the beam splitter 102 B and the inner rotatable stage 311 B may be of the same configuration.
  • the outer rotatable stage 312 A may be rotatable about the same rotational axis as that of the inner rotatable stage 311 A.
  • the outer rotatable stage 312 A may be of a discoid shape or an annular shape.
  • the inner rotatable stage 311 A may be accommodated within the aperture at the center of the outer rotatable stage 312 A to be rotatable therein.
  • the beam dumper 104 A may be fixed to the outer rotatable stage 312 A at a position toward exterior of the inner rotatable stage 311 A.
  • the beam dumper 104 B and the outer rotatable stage 312 B may be of the same configuration.
  • Each of the inner rotatable stages 311 A and 311 B as well as each of the outer rotatable stages 312 A and 312 B may be respectively connected to the laser control unit 41 .
  • the outer rotatable stage 312 A may be configured to rotate for a rotational angle of 2 ⁇ , which is twice a rotational angle ⁇ of the inner rotational stage 311 A. This may be realized by control exerted by the laser control unit 41 , or may be realized by a gear ratio between a gear that rotates the inner rotatable stage 311 A and a gear that rotates the outer rotatable stage 312 A.
  • the inner rotatable stage 311 B and the outer rotatable stage 312 B may be of the same configuration.
  • the inner rotatable stage 311 B may be configured to rotate in a direction reverse to that of the rotational direction of the inner rotatable stage 311 A.
  • the inner rotatable stage 311 B may rotate for an angle of ⁇ in the case that the inner rotatable stage 311 A rotates for an angle of ⁇ .
  • This may be realized by control exerted by the laser control unit 41 , or may be realized by the gear that rotates the inner rotatable stage 311 A and a gear that rotates the inner rotatable stage 311 B.
  • the laser control unit 41 may place the movable plate 105 A of the attenuator module 310 in the low output arrangement (first position), as illustrated in FIG. 16 .
  • the laser control unit 41 may control the inner rotatable stages 311 A and 311 B to change the incident angles of the laser beam 30 with respect to the beam splitters 102 A and 102 B, as illustrated in FIG. 17 .
  • the beam splitter 102 A may rotate for an angle of ⁇
  • the beam splitter 102 B may rotate for an angle of ⁇ .
  • the outer rotatable stages 312 A and 312 B may rotate for the doubled rotational angles 2 ⁇ and ⁇ 2 ⁇ , accompanying the rotation of the inner rotatable stages 311 A and 311 B.
  • the arrangements of the beam dumpers 104 A and 104 B are changed such that reflected light beams 30 a and 30 b which are reflected by the beam splitters 102 A and 102 B enter the beam dumpers 104 A and 104 B.
  • the power of the laser beam 30 which is output from the attenuator module 310 can be continuously and arbitrarily changed.
  • the output of the laser apparatus 3 can be continuously and arbitrarily changed.
  • At least one of the plurality of attenuator modules (the attenuator module 120 , for example) which are mounted within the beam dump apparatus 100 may be replaced with the attenuator module 310 , as illustrated in FIG. 18 and FIG. 19 .
  • the laser control unit 41 may place the movement plate 105 A of each of the attenuator modules 110 and 310 in the low output arrangement (first position) and place the movable plate 105 B of the beam dump module 130 in the laser beam cutoff arrangement (third position), as illustrated in FIG. 18 .
  • the laser control unit 41 may place the movement plate 105 A of each of the attenuator modules 110 and 310 in the high output arrangement (second position) and place the movable plate 105 B of the beam dump module 130 in the laser beam output arrangement (fourth position), as illustrated in FIG. 19 .
  • the attenuator module 310 may be set in the low output arrangement, and the incident angles ⁇ 1 and ⁇ 2 of each of the beam splitters 102 A and 102 B with respect to the laser beam 30 may be adjusted, as illustrated in FIG. 17 . Thereby, the power of the laser beam 30 which is output from the attenuator module 310 can be continuously and arbitrarily changed.
  • FIG. 20 is a diagram that schematically illustrates an example of the configuration of a laser apparatus according to the fourth embodiment.
  • the locations at which the attenuator modules and beam dump modules which have been described as examples in the above embodiments are not limited to the output stage of the laser apparatus 3 . That is, one or more attenuator modules 140 and/or a beam dump module 150 may be provided along the optical path from the master oscillator MO to the amplifier PA 3 .
  • an attenuator module 160 and a beam dump module 170 may be provided between the master oscillator MO and the amplifier PA 1 , as illustrated in FIG. 20 .
  • the one or more attenuator modules to be provided may be any of the attenuator modules 110 , 120 , 210 , 220 , and 310 described above.
  • the laser control unit 41 may place the movable plate 105 A of the attenuator module 160 in a high output arrangement (second position), and place the movable plate 105 C of the beam dump module 170 in a laser beam output arrangement (fourth position).
  • the laser control unit 41 may adjust the output from the laser apparatus 3 by placing the movable plate 105 A in the low output arrangement (first position) and by adjusting the rotational angles of each of the rotatable stages.
  • the laser control unit 41 may place the movable plate 105 A of the attenuator module 160 in a low output arrangement (first position), and place the movable plate 105 C of the beam dump module 170 in a laser beam cutoff arrangement (third position).
  • the thermal load on the semiconductor laser will change if the output energy of the master oscillator MO is changed.
  • the oscillating wavelength of the master oscillator MO may change.
  • the master oscillator MO is capable of always being oscillated at a constant energy. Therefore, changes in the oscillating wavelength of the master oscillator MO can be suppressed.
  • the fifth embodiment will be described as an example of a beam dump apparatus to be mounted on the chamber 2 of FIG. 2 .
  • structures which are the same as those of the embodiments described above will be denoted with the same reference numerals.
  • FIG. 21 is a diagram that schematically illustrates an example of the configuration of a beam dump apparatus according to the fifth embodiment.
  • the beam dump apparatus 500 may be equipped with one or more beam dump modules 510 ⁇ 530 .
  • the beam dump apparatus 500 may also be equipped with a final end module 540 .
  • Each of the beam dump modules 510530 may be equipped with a frame 501 , a beam splitter 502 , and a beam dumper 104 .
  • the frame 501 may be a T pipe joint shaped member formed by metal or the like.
  • the frame 501 may be equipped with a connecting flange 501 a at each of its three open ends.
  • the sizes of the connecting flanges 501 a at the three open ends may be the same or may be different.
  • Each of the connecting flanges 501 a may have a plurality of bolt holes therein.
  • the bolt hole diameters and the pitches among the bolt holes may be the same among connecting flanges 501 a of the same size.
  • the connecting flanges 501 a may be ConFlat flanges. It is possible to connect ConFlat flanges to each other employing metal packings. For this reason, the gastight properties within the beam dump apparatus 500 can be secured by employing ConFlat flanges as the connecting flanges 501 a . In this case, it is not necessary for the chamber 2 to be equipped with the dumper window 58 .
  • the three connecting flanges 501 a may each define an opening through which a laser beam 60 may enter and exit.
  • one may be employed as an input opening through which the laser beam 60 enters into the beam dump module 510 , 520 , or 530 .
  • Another one of the three openings may be employed as an output opening, through which the laser beam 60 exits the beam dump module 510 , 520 , or 530 .
  • the remaining one of the three openings may be a mounting opening onto which the beam dumper 104 is mounted.
  • a splitter holder 503 that holds the beam splitter 502 may be provided within the frame 501 .
  • Channels, through which a cooling medium flows, may be provided in the interior of the splitter holder 503 .
  • the splitter holder 503 may hold the beam splitter 502 at a position and an angle such that the a reflected beam 60 a of the laser beam 60 that enters through the input opening propagates toward the mounting opening or the output opening, and the laser beam 60 which is transmitted through the beam splitter 502 propagates toward the output opening or the mounting opening.
  • FIG. 21 illustrates an example of a configuration in which the reflected beam 60 a propagates toward the mounting opening, and the laser beam 60 which is transmitted through the beam splitter 502 propagates toward the output opening.
  • An optical substrate that exhibits high transmissivity with respect to the wavelength of a laser beam which is output from a CO 2 laser may be employed as the beam splitter 502 .
  • a coating for adjusting reflectance may be administered on the surface of the optical substrate.
  • the beam splitter 502 may be an uncoated ZnSe plane parallel substrate. In this case, the reflectance will be approximately 20% in the case that a laser beam output from a CO 2 enters the beam splitter 502 at an incident angle of 45°.
  • the beam dumper 104 may be the same as the beam dumpers 104 A ⁇ 104 C described above. Accordingly, a commercially available beam dumper may be employed as the beam dumper 104 . In this case, a dedicated or an appropriate adapter may be employed to mount the beam dumper 104 to the connecting flange 501 a . In addition, the channels within the beam dumper 104 may be connected to the cooling apparatus 590 .
  • the final end module 540 may be the beam dumper 104 .
  • a dedicated or an appropriate adapter may be employed to mount the final end module 540 to the connecting flange 501 a .
  • a beam dumper different from the beam dumper 104 may be employed as the final end module 540 .
  • the final end module 540 may be a lid member that seals the output opening of the frame 501 instead of the beam dumper 104 .
  • the reflectance of the beam splitter 502 within the beam dump module 530 to which the final end module 540 is connected may be approximately 100%.
  • the beam splitter 502 within the frame 501 may be omitted.
  • the one or more beam dump modules 510 ⁇ 530 may be linearly connected in a single row.
  • the beam dump module 510 which is positioned at one end of the row may be connected to the chamber 2 .
  • the final end module 540 described above may be connected to the beam dump module 530 at the other end of the row.
  • the beam dump modules 510 ⁇ 530 which are connected in a single row may be provided such that the connecting flanges 501 a thereof which are utilized as mounting openings alternately face opposite directions.
  • the connections between the beam dump module 510 and 520 , between the beam dump modules 520 and 530 , and between the beam dump module 530 and the final end module 540 may be fastening by bolts and nuts.
  • the specifications of the beam splitters 102 and the beam dumpers 104 of the beam dump modules 510 ⁇ 530 and the specifications of the beam dumper 104 that constitutes the final end module 540 may be as follows.
  • the energies of the laser beams 60 and 60 a which are absorbed by each of the beam dumpers 104 can be estimated to be as follows.
  • Beam Dumper 104 of Beam Dump Module 510 2.50 kW
  • Beam Dumper 104 of Beam Dump Module 520 2.47 kW
  • Beam Dumper 104 of Beam Dump Module 530 2.51 kW
  • a substantially equal amount of energy is absorbed by the four beam dumpers 104 as described above.
  • the specifications listed above are merely one example, but that beam dumpers having common specifications may be utilized as each of the beam dumpers 104 , by selecting the reflectances of the beam splitters 102 as appropriate.
  • the reflectances of the beam splitters 102 may be higher for beam splitters 102 which are positioned toward the downstream side along the propagation path of the laser beam 60 .
  • the laser beam 60 which is reflected by the dumper mirror 57 within the chamber 2 may enter the beam dump module 510 at the first stage of the beam dump apparatus 500 , via the dumper window 58 .
  • a portion of the laser beam 60 that enters the beam dump module 510 may be reflected by the beam splitter 502 as the reflected beam 60 a .
  • the reflected beam 60 a may enter the beam dumper 104 which is mounted on the connecting flange 501 a which is the mounting opening.
  • a portion of the reflected beam 60 a that enters the beam dumper 104 may be absorbed by the cone portion 104 c (refer to FIG. 4 ).
  • the remaining portion of the reflected beam 60 a may be diffused and absorbed by the corrugated portion 104 b.
  • the laser beam 60 may enter the next stage beam dump module 520 via the output opening of the beam dump module 510 .
  • the power of the laser beam 60 may be reduced, by sequentially passing through the beam dump modules 510 ⁇ 530 in the manner described above.
  • the laser beam 60 which is output from the output opening of the final stage beam dump module 530 may enter the final end module 540 , and may be absorbed by the cone portion 104 c and the corrugated portion 104 b thereof.
  • the beam dump apparatus 500 can be mounted onto the chamber 2 by securing an area corresponding to one beam dump module on the outer wall of the chamber 2 .
  • a high capacity beam dump apparatus 500 can be easily realized. That is, providing additional beam dump modules according to the energy of the laser beam 60 is facilitated.
  • beam dumpers having specifications in common can be utilized in a plurality of beam dump modules, by selecting the reflectance of the beam splitter within each beam dump module. This suggests that commercially available beam dumpers can be utilized. Thereby, the costs for developing and producing a dedicated high capacity beam dump apparatus 1000 or 5000 can be obviated, and an increase in apparatus cost can be suppressed.
  • the total dimensions of the beam dump apparatus 500 can be decreased. Still yet further, shifting of the optical path of the laser beam 60 within the beam dump apparatus 500 can be suppressed by this arrangement. As a result, providing additional beam dump modules is facilitated.
  • the laser beam 60 which is scattered by components within the beam dump apparatus 500 are absorbed by the inner walls of the frames 501 , and therefore leakage of the laser beam 60 to the exterior can be suppressed.
  • each of the beam dumpers 104 and each of the beam splitters 102 are directly or indirectly cooled. Therefore, damage can be suppressed over a long period of time.
  • the fifth embodiment was described above as an example in which the energy of the laser beam 60 that enters the beam dump apparatus 500 is 10 kW.
  • a first modification will be described as an example of a case in which the energy of the laser beam 60 that enters the beam dump apparatus 500 is 20 kW.
  • FIG. 23 is a diagram that schematically illustrates an example of the configuration of a beam dump apparatus according to the first modification.
  • the beam dump apparatus 500 A may be equipped with beam dump modules 550 and 560 in addition to the same structures as those of the beam dump apparatus 500 . That is, the beam dump apparatus 500 A may be of a configuration in which the beam dump apparatus 500 is additionally provided with the two beam dump modules 550 and 560 .
  • the beam dumpers 104 of the beam dump modules 510 ⁇ 530 , 550 , and 560 may have common specifications.
  • the capacities of the beam dumpers 104 at the later stages may be greater than those of earlier stages. If the energy of the laser beam 60 that enters the beam dump apparatus 500 A is set to 20 kW, the specifications of the beam splitters 102 and the beam dumpers 104 of the beam dump modules 510 ⁇ 530 , 550 and 560 , and the specifications of the beam dumper 104 that constitutes the final end module 540 may be as follows.
  • the energies of the laser beams 60 and 60 a which are absorbed by each of the beam dumpers 104 can be estimated to be as follows.
  • Beam Dumper 104 of Beam Dump Module 510 2.40 kW
  • Beam Dumper 104 of Beam Dump Module 520 2.64 kW
  • Beam Dumper 104 of Beam Dump Module 530 3.74 kW
  • Beam Dumper 104 of Beam Dump Module 550 3.70 kW
  • Beam Dumper 104 of Beam Dump Module 560 2.51 kW
  • the specifications of the beam dumpers 104 of the two early stage beam dump modules 510 and 520 may be the same.
  • the specifications of the beam dumpers 104 of the three later stage beam dump modules 530 , 550 , and 560 may be the same.
  • commercially available beam dumpers may be utilized as the 3 kW capacity and 5 kW capacity beam dumpers 104 .
  • the beam dumpers 104 positioned more toward the downstream side along the propagation path of the laser beam 60 may be higher capacity beam dumpers.
  • beam dumpers 104 positioned more toward the upstream side along the propagation path of the laser beam 60 may be lower capacity beam dumpers.
  • the capacity of the beam dump apparatus 500 A can be increased without increasing the installation area on the chamber 2 for the beam dump apparatus 500 A, by employing higher capacity beam dumpers as the beam dumpers 104 which are positioned at the downstream side along the propagation path of the laser beam 60 as described above.
  • the amount of space which is occupied by the beam dump apparatus 500 A in the vicinity of the chamber 2 can be reduced, by employing lower capacity beam dumpers as the beam dumpers 104 which are positioned at the upstream side along the propagation path of the laser beam 60 .
  • the fifth embodiment was described above as an example of a case in which the beam dump modules 510 ⁇ 530 are arranged in series.
  • the second modification will be described as an example in which the beam dump modules 510 ⁇ 530 are in a different arrangement.
  • FIG. 24 is a diagram that schematically illustrates an example of the configuration of a beam dump apparatus according to the second modification.
  • the beam dump apparatus 500 B may be equipped with beam dump modules 510 ⁇ 530 and a final end module 540 , similarly to the beam dump apparatus 500 .
  • the beam dump modules 510 ⁇ 530 may be arranged in a bent L shape.
  • all of the plurality of connecting flanges 501 a of each of the beam dump modules 510 ⁇ 530 may be of the same size and have the same specifications (the arrangements and diameters of bolt holes, etc.).
  • the plurality of beam dump modules may be connected in various arrangements, which are not limited to linear arrangements.
  • the degree of freedom in arranging the beam dump modules can be increased further by uniformizing all of the connecting flanges 501 a of each of the frames 501 .
  • auxiliary devices such as a vacuum pump, various control apparatuses, and various power source apparatuses, may be provided in the vicinity of the chamber 2 .
  • the beam dump apparatus 500 may be provided while avoiding interference with the auxiliary devices.
  • the beam dump apparatus 500 B can be easily installed on the chamber 2 , by changing the arrangement of the beam dump modules as appropriate, as illustrated in the example of the second modification.
  • the beam dumper 104 of each module may be replaced with a laser beam measuring device, such as a power meter and a beam profiler in the beam dump apparatus 500 of the example described as the fifth embodiment.
  • a laser beam measuring device such as a power meter and a beam profiler in the beam dump apparatus 500 of the example described as the fifth embodiment.
  • a sixth embodiment will be described as an example in which a power meter is employed instead of the beam dumper 104 of the final end module 540 .
  • FIG. 25 is a diagram that schematically illustrates an example of the configuration of a beam dump apparatus according to the sixth embodiment.
  • the beam dump apparatus 600 may be equipped with beam dump modules 510 and 520 , and a power meter 610 as a final end module.
  • the beam dump modules 510 and 520 may be the same as the beam dump modules 510 and 520 described above.
  • the power meter 610 may be connected to the laser control unit 41 . In addition, the power meter 610 may be connected to the cooling apparatus 590 .
  • the power meter 610 may measure the power of the laser beam 60 that enters thereinto.
  • the power meter 610 may output the measured power of the laser beam 60 to the laser control unit 41 .
  • the laser control unit 41 may store the reflectance of the beam splitter 102 of each of the beam dump modules 510 and 520 .
  • the laser control unit 41 may calculate the power reduction rate of the laser beam 60 that enters the power meter 610 with respect to the laser beam 60 which had entered the beam dump apparatus 600 , based on the values of the reflectance of each of the beam splitters 102 .
  • the laser control unit 41 may calculate the power of the laser beam 60 which had entered the beam dump apparatus 600 (referred to as incident power) from the energy of the laser beam 60 which is detected by the power meter 610 , based on the calculated power reduction rate.
  • the calculated incident power of the laser beam 60 may be utilized as a parameter for various types of control which are exerted by the laser control unit 41 .
  • the laser control unit 41 may operate the laser beam manipulator 53 based on the calculated incident power of the laser beam 60 . Thereby, the irradiation state of the target 27 by the laser beam may be controlled.
  • the laser beam 33 may be emitted at a greater diameter than that of the target 27 . For this reason, the laser beam 33 which has passed through the periphery of the target 27 may enter the beam dump apparatus 600 . By measuring the power of this laser beam 33 , the irradiation state of the target 27 by the laser beam 33 can be estimated. In addition, by operating the laser beam manipulator 53 based on the estimated irradiation state, the irradiation state of the target 27 by the laser beam 33 can be appropriately maintained.
  • FIG. 26 is a diagram that schematically illustrates an example of the configuration of a beam dump apparatus according to the modification.
  • the beam dump apparatus 600 A may be equipped with beam dump modules 510 ⁇ 530 , and a beam profiler 620 as a final end module.
  • the beam dump modules 510 ⁇ 530 may be the same as the beam dump modules 510 ⁇ 530 described above. However, the arrangement of the beam dump modules 510 ⁇ 530 may be that which is bent in an L shape.
  • the laser beam 60 that enters the beam profiler 620 may be collected by a collecting optical system 621 .
  • the collecting optical system 621 may be designed to match the dumper mirror 57 (refer to FIG. 2 ) such that an image of the laser beam 33 in the vicinity of the plasma generating region 25 is transferred to a light receiving surface 622 of the beam profiler 620 .
  • the beam profiler 620 may measure a cross sectional profile image of the laser beam 60 that enters thereinto.
  • the cross sectional profile image may be a cross sectional profile image of the laser beam 33 by which the target 27 is irradiated within the plasma generating region 25 .
  • Image data of the measured cross sectional profile image may be input to the EUV light generation control unit 5 .
  • the EUV light generation control unit 5 may utilize the image data as a parameter for various types of control. For example, the EUV light generation control unit 5 may judge the irradiation state of the target 27 by the laser beam 33 based on the image data.
  • the EUV light generation control unit 5 may judge whether the distance D between a center position O 33 of the laser beam 33 and a center position O 27 of a shadow 27 S of the target 27 is within an allowable range, for example.
  • the EUV light generation control unit 5 may operate the laser beam manipulator 53 such that the distance D becomes shorter.
  • the EUV light generation control unit 5 may control the delay time from input of target detection signals to output of light emission triggers such that the distance D becomes shorter.
  • the irradiation state of the target 27 by the laser beam 33 can be maintained appropriately, employing the laser beam 60 , of which the power has been reduced.

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US10429729B2 (en) 2017-04-28 2019-10-01 Taiwan Semiconductor Manufacturing Co., Ltd. EUV radiation modification methods and systems
WO2019043773A1 (ja) 2017-08-29 2019-03-07 ギガフォトン株式会社 極端紫外光生成装置
KR102018613B1 (ko) * 2018-04-04 2019-09-06 주식회사 이오테크닉스 음향 광학 편향 시스템, 이를 포함하는 레이저 가공 장치 및 빔 차단 방법
US10473828B2 (en) * 2018-04-13 2019-11-12 Raytheon Company Beam dumps having tailored absorbing surfaces
KR20220022472A (ko) * 2019-04-04 2022-02-25 에이에스엠엘 네델란즈 비.브이. 레이저 집속 모듈
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