US10217654B1 - Embedded features for interlocks using additive manufacturing - Google Patents

Embedded features for interlocks using additive manufacturing Download PDF

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Publication number
US10217654B1
US10217654B1 US15/894,436 US201815894436A US10217654B1 US 10217654 B1 US10217654 B1 US 10217654B1 US 201815894436 A US201815894436 A US 201815894436A US 10217654 B1 US10217654 B1 US 10217654B1
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United States
Prior art keywords
component
signal
identification feature
ion implantation
implantation system
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US15/894,436
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English (en)
Inventor
Craig R. Chaney
Adam M. McLaughlin
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Priority to US15/894,436 priority Critical patent/US10217654B1/en
Assigned to VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. reassignment VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHANEY, CRAIG R., MCLAUGHLIN, ADAM M.
Priority to US16/244,623 priority patent/US10672634B2/en
Priority to KR1020207025768A priority patent/KR20200110448A/ko
Priority to JP2020542594A priority patent/JP7483614B2/ja
Priority to CN201980012729.1A priority patent/CN111699541B/zh
Priority to KR1020237017830A priority patent/KR20230078835A/ko
Priority to PCT/US2019/013014 priority patent/WO2019156770A1/en
Priority to TW108102349A priority patent/TWI743437B/zh
Publication of US10217654B1 publication Critical patent/US10217654B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67294—Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B21/00—Alarms responsive to a single specified undesired or abnormal condition and not otherwise provided for
    • G08B21/18—Status alarms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y80/00—Products made by additive manufacturing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/248—Components associated with the control of the tube
    • H01J2237/2482—Optical means

Definitions

  • the present disclosure is in the technical field of additive manufacturing, and more specifically the manufacture of components having interlocks and embedded identification features.
  • Semiconductor devices are manufactured using complex semiconductor processing systems, comprising a plurality of different components. Semiconductor yield and performance is reliant on the interaction and cooperation of these components. For example, if one component is below target specifications, the resulting semiconductor devices may be adversely affected.
  • equipment manufacturers attempt to provide high quality components for use in these complex semiconductor processing systems.
  • the equipment manufacturers then specify overall system performance based on the specifications of each component.
  • Some of the components used in these complex semiconductor systems may wear out due to usage or wearout. Often times, replacement parts may be available from third-party vendors. Unfortunately, some of these third party components may not be made to the same specifications as the original components. Consequently, there may be a degradation in performance, efficiency or yield due to these inferior third-party components.
  • the present disclosure describes a method and apparatus for determining whether components in a semiconductor manufacturing system are authorized for use in that system.
  • an identification feature in the component, it is possible for a controller to determine whether that component is qualified for use in the system.
  • the system may alert the user, alter the operation of the system, or, in certain embodiments, stop operating of the system.
  • This identification feature is embedded in a component by using an additive manufacturing process that allows the identification feature to be embedded in the component without subjecting the identification feature to extreme temperatures.
  • an ion implantation system comprises a controller in communication with a receiver; and a component having a cavity and an identification feature disposed in the cavity; wherein the controller outputs a signal which is received and modified by the identification feature before being transmitted to the receiver.
  • the signal comprises a light signal
  • the identification feature modifies a frequency, phase or amplitude of the signal.
  • the signal comprises an analog signal, and the identification feature modifies a frequency, phase or amplitude of the signal.
  • the signal comprises a digital signal, and the identification feature modifies a frequency, duty cycle or phase of the signal.
  • the signal comprises a digital signal, and the identification feature modifies the signal by appending a unique identification to the signal.
  • an ion implantation system comprises a controller in communication with a receiver; and a component having a cavity and an identification feature disposed in the cavity; wherein the controller outputs a signal which is received and modified by the identification feature before being transmitted to the receiver; and wherein the controller analyzes the signal received by the receiver to determine a characteristic of the component.
  • the ion implantation system comprises a second component having a cavity and a second identification feature, wherein the signal output from the identification feature is received and modified by the second identification feature before being received by the receiver.
  • the characteristic comprises whether the component is authorized to operate on the ion implantation system.
  • the controller performs an action based on the characteristic.
  • the action may comprise a modification of at least one operating parameter of the ion implantation system.
  • the action may comprise actuating an alert to an operator.
  • an ion implantation system comprises at least one component comprising a cavity, and an identification feature; wherein the cavity comprises at least one passageway between an interior of the cavity and an exterior of the component, and wherein the identification feature is disposed in the cavity and a top of the cavity is sealed with metal strips.
  • the identification feature is larger than the passageway in at least one dimension.
  • the ion implantation system comprises a second component having a second identification feature, wherein the identification feature is in communication with the second identification feature.
  • the identification feature comprises an amplitude varying element, a frequency varying element or a phase varying element.
  • the top of the cavity is sealed using ultrasonic additive manufacturing.
  • FIGS. 1A-1C illustrate the fabrication of a component having an embedded identification feature according to one embodiment
  • FIGS. 2A-2C illustrate the fabrication of a component having an embedded identification feature according to a second embodiment
  • FIG. 3 shows a first embodiment of an authentication mechanism using the component shown in FIG. 1C ;
  • FIG. 4 shows a second embodiment of an authentication mechanism using the component shown in FIG. 1C ;
  • FIG. 5 shows a third embodiment of an authentication mechanism using the component shown in FIG. 1C ;
  • FIG. 6 shows a representative control system for a semiconductor manufacturing system
  • FIG. 7 shows a system with multiple components having an identification feature according to one embodiment
  • FIG. 8 shows a system with multiple components having an identification feature according to a second embodiment
  • FIG. 9 shows an ion implantation system that utilizes a component having an embedded identification feature.
  • a semiconductor manufacturing system may be constructed of a plurality of components.
  • An identification feature may be embedded in any or all of these components to allow the system to identify the component.
  • the identification feature may be any element that may be used to identify the component.
  • the component may be an annular ring, such as a gasket, flange or other similar component.
  • the component may be rectangular in shape.
  • the components may be any other shape as well.
  • FIGS. 1A-1C illustrate a sequence used to embed an identification feature in a component.
  • FIG. 1A shows a component 100 that is shaped as an annular ring or hollow cylinder.
  • a cavity 110 may be subtractively introduced into the sidewall of the component 100 .
  • This cavity 110 may be in the form of a channel in some embodiments.
  • This cavity 110 may be made by grinding, etching or any other suitable process. Further, the cavity 110 may be any desired width and depth.
  • the component 100 may have been created using an additive manufacturing.
  • the cavity 110 may be created as the component 100 is being grown.
  • the component 100 may be created using a cast or mold.
  • the cavity 110 may be created during the casting or molding process. In all embodiments, a component 100 having a cavity 110 is created.
  • an identification feature 120 such as a fiberoptic cable, may be inserted in the cavity 110 . While a fiberoptic cable is shown, it is understood that any other type of identification feature may be inserted.
  • the identification feature may be a printed circuit board, an electrical circuit, one or more light emitters, one or more sensors, an electrical conduit or any combination of these elements.
  • the top of the cavity 110 is sealed. This may be done using an additive manufacturing technique.
  • the component 100 may be made of metal and an ultrasonic additive manufacturing process may be employed.
  • a layer of metal which may be a metal strip 130 , is disposed over the cavity 110 .
  • the metal strip 130 may be wider than the width of the cavity 110 in some embodiment.
  • the metal strip 130 is deposited on the component 100 using an apparatus that includes one or more transducers that emit ultrasonic waves toward a horn. The metal strip 130 is in contact with the horn, and is thus subjected to the ultrasonic waves as well as applied pressure.
  • a plurality of metal strips 130 are welded to the component 100 .
  • identification features that are sensitive to thermal extremes may be embedded in the cavity 110 without damage.
  • a passage 140 remains on at least one end of the cavity 110 .
  • a passage 140 remains on both ends of the cavity 110 .
  • a conduit such as a fiberoptic cable or an electrical wire may be routed through the cavity 110 and exit on both ends of the cavity 110 .
  • the identification feature 120 disposed in the cavity 110 is larger than the passage 140 in at least one dimension, such that the identification feature 120 cannot be inserted or removed from the cavity 110 once the metal strips 130 are welded in place.
  • FIGS. 1A-1C show a component 100 with an identification feature 120 disposed in a cavity 110 that resembles a channel
  • FIGS. 2A-2C show a component 150 in the form of a rectangular prism that includes a cavity 160 .
  • This cavity 160 may be created in a number of ways.
  • the cavity 160 may be created through a subtractive manufacturing technique, such as grinding, etching or another suitable process.
  • the component 150 may be fabricated by molding, where the molding includes a protrusion that creates the cavity 160 .
  • the component 150 may have been created using an additive manufacturing.
  • the cavity 160 may be created as the component 150 is being grown.
  • the component 150 may be made of metal.
  • an identification feature 170 is disposed in the cavity 160 .
  • identification feature 170 may be a fiberoptic cable, a printed circuit board, an electrical circuit, one or more light emitters, one or more sensors, an electrical conduit or any combination of these elements.
  • a passage 190 is shown which connects the cavity 160 to an exterior surface of the component 150 . This passage 190 may have at least one dimension that is smaller than a corresponding dimension of the cavity 160 .
  • metal strips 180 are welded over the cavity 160 , such as through the use of ultrasonic additive manufacturing (UAM).
  • UAM ultrasonic additive manufacturing
  • the identification feature 170 is not damaged by the welding process.
  • the identification feature 170 is larger in at least one dimension than the passage 190 , it is not possible to remove the identification feature 170 from the component 150 without removing the metal strips 180 .
  • the cavity 160 may be in communication with the exterior of the component through one or more passages 190 .
  • passages 190 are disposed on opposite sides of the cavity 160 .
  • passages 190 there may be two passages 190 , but they may be disposed on adjacent sides or the same side of the component 150 . In yet other embodiments, there may be more than two passages 190 . Thus, the number and location of the passages 190 is not limited by this disclosure.
  • passages as simply being open pathways, it is understood that a connector or other interface component may be disposed in these passages such that adjacent components and identification features may be physically connected together.
  • the UAM process allows an identification feature that is larger than the passage connecting that identification feature to an exterior of the component to be embedded in the interior of the component.
  • a printed circuit board having at least one dimension that is larger than the passage may be embedded in a component.
  • the identification feature may comprise a sensor or a light emitter having at least one dimension that is larger than the passage.
  • FIGS. 3-5 shows various embodiments that utilize a light beam transmitted through a fiberoptic cable to determine whether a component is authorized for use in the semiconductor manufacturing system.
  • a light source 200 is used to emit a light into the fiberoptic cable 211 that is disposed in a first component 210 .
  • a sensor 220 is used to capture the output of the light beam as it exits a fiberoptic cable 231 in the second component 230 . It is noted that this configuration is simply for illustrative purposes.
  • the sensor 220 may be disposed in the second component 230 in some embodiments.
  • the light source 200 may be disposed in the first component 210 .
  • FIGS. 3-5 show three components to illustrate that the authentication mechanism can include a plurality of different components.
  • the authentication mechanism may be performed using an arbitrary number of components. For example, one or both of the first component and the second component may be omitted. Alternatively, more components may also be added to the authentication mechanism.
  • FIGS. 3-5 show a third component disposed between the first component 210 and the second component 230 .
  • the first component 210 and the second component 230 are adjacent to the third component and sandwich the third component.
  • the third component comprises an identification feature that serves as a portion of the authentication mechanism.
  • FIG. 3 shows a first embodiment of an authentication mechanism.
  • the third component 250 which is disposed between the first component 210 and the second component 230 , includes an identification feature, which is a conduit 251 that connects the fiberoptic cable 211 in the first component 210 and the fiberoptic cable 231 in the second component 230 .
  • This conduit 251 may be a fiberoptic cable or another suitable conduit.
  • the light emitted from the light source 200 is to be received by the sensor 220 after passing through the first component 210 , the second component 230 and the third component 250 . If the sensor 220 does not detect the light, the authentication fails.
  • FIG. 4 shows a second embodiment of an authentication mechanism.
  • the third component 260 which is disposed between the first component 210 and the second component 230 includes an identification feature, which is an amplitude varying element 261 that is disposed between the fiberoptic cable 211 in the first component 210 and the fiberoptic cable 231 in the second component 230 .
  • This amplitude varying element 261 may attenuate the signal received from the fiberoptic cable 211 . In another embodiment, this amplitude varying element 261 may amplify the signal received from the fiberoptic cable 211 .
  • the light emitted from the light source 200 is to be received by the sensor 220 after passing through the first component 210 , the second component 230 and the third component 260 . If the sensor 220 does not detect the defined change in light amplitude, the authentication fails. While FIG. 4 shows a single component (i.e. second component 230 ) that attenuates or amplifies the light, the disclosure is not limited to this embodiment. Amplitude modification can occur in multiple components and may occur multiple times. In certain embodiments, the attenuation or amplification of each component is unique so that the system can determine which component does not possess the requisite identification feature.
  • FIG. 5 shows a third embodiment of an authentication mechanism.
  • the third component 270 which is disposed between the first component 210 and the second component 230 includes an identification feature, which is a frequency varying element 271 that is disposed between the fiberoptic cable 211 in the first component 210 and the fiberoptic cable 231 in the second component 230 .
  • This frequency varying element 271 may transform a constant light beam into a series of pulses, as shown in FIG. 5 .
  • this frequency varying element 271 may modify a time-varying signal received from the fiberoptic cable 211 .
  • the light emitted from the light source 200 is to be received by the sensor 220 after passing through the first component 210 , the second component 230 and the third component 270 . If the sensor 220 does not detect the defined change in light frequency, the authentication fails. While FIG. 5 shows a single component (i.e. second component 230 ) that modifies the frequency of the light beam, the disclosure is not limited to this embodiment. Frequency modification can occur in multiple components and may occur multiple times.
  • the identification feature may be a phase varying element, which changes the phase of a receiving pulsed signal.
  • the identification may modify one or more characteristics of the light beam, where the characteristics include amplitude, frequency and phase.
  • FIGS. 3-5 show a light source 200 and a sensor 220 , it is understood that other devices may be utilized.
  • the authentication mechanism may utilize an analog electric signal and electrical conduits.
  • the light source 200 and sensor 220 are replaced by analog electrical components, while the function of the identification feature is unaffected.
  • the identification feature may be used to pass the analog signal, vary its amplitude, vary its frequency, or vary its phase.
  • digital electrical signals may be passed between the components.
  • the digital electrical signals may comprise a square wave, a clock signal, a pulse train or other modulated signal.
  • the identification feature may change the frequency of the received digital signal.
  • the identification feature may change the phase of the received digital signal.
  • the identification feature may modify the duty cycle of the received digital signal before transmitting it to the second component.
  • the identification feature may include an electrical circuit or a memory storage element which is able to provide an identifier in response to a request from the semiconductor manufacturing system.
  • a request for identification may be transmitted by a controller. This request may be transmitted on a serial or parallel interface.
  • the identification feature returns a unique identifier.
  • a digital signal may be transmitted from the first component to the third component and to the second component. As each component receives the incoming signal, it appends a unique identifier to the end of the incoming signal. In this way, after the last component in the system transmits the signal back to the controller, the controller can identify all of the components in the system, as well as their physical configuration.
  • the controller may initiate the sequence by transmitting a starter symbol.
  • the first component may receive the starter symbol, and append a first unique identifier to the end of the starter symbol.
  • the next component may receive the digital sequence that includes a starter symbol and a first unique identifier and append a second unique identifier. This continues until all of the components have received the digital sequence and append their respective unique identifier.
  • the controller can then parse the received digital sequence to identify each component and the order in which they are configured.
  • the identification features in each component are in communication with each other.
  • the identification features are connected using a cable, such as an electrical conductor or a fiberoptic cable.
  • the components may be daisy chained together in certain embodiments.
  • connectors are disposed at or near the passages.
  • the components are connected using conduits which attach to connectors disposed on two adjacent components.
  • the connector for one component attaches directly to the connector of the adjacent component.
  • adjacent components may be configured such that one component has a male connector, while the adjacent component utilizes a female connector. In this way, the two components can simply be pressed together to establish the connection between adjacent identification features.
  • the connectors may be standard connectors, or may be custom made.
  • FIG. 6 shows a simplified diagram of the control system for a representative semiconductor manufacturing system 300 .
  • the semiconductor manufacturing system 300 comprises one or more components, such as first component 210 , second component 230 and third component 310 .
  • the system also includes a signal source 320 .
  • the signal source may be a light source, an analog electrical signal source or a source of digital signals.
  • the system also comprises a signal receiver 330 .
  • the signal receiver 330 may be in communication with a controller 340 .
  • the controller 340 may comprise a processing unit 341 in communication with a storage element 342 .
  • the storage element 342 may be any non-transitory media, such as a dynamic memory (DRAM), a random access memory (RAM), a read only memory (ROM), an electrical erasable memory (EEROM), a FLASH memory, a magnetic media or an optical media. Other types of media may also be used to create the storage element 342 .
  • the storage element 342 contains instructions, which when executed by the processing unit 341 , enable the controller 340 to perform the functions described herein.
  • the processing unit 341 may be any suitable device, such as a general purpose processor, a special purpose processor, or an embedded processor.
  • the controller 340 may instruct the signal source 320 to output a particular signal. That signal may pass through the first component 210 , the third component 310 and the second component 230 . One or more of these components may manipulate or alter the signal that is output by the signal source 320 . The signal is ultimately received by the signal receiver 330 . This received signal is then processed, either by the signal receiver 330 or by the controller 340 to determine whether it is within acceptable parameters. If the controller 340 determines that the received signal meets these criteria, the semiconductor manufacturing system 300 operates normally. If the controller 340 determines that the received signal does not meet these criteria, the controller 340 may alert an operator of this fact. The alert may be in the form of a visual message, such as on a display device or a remote device. Alternatively, the alert may be an audible alarm. In other embodiments, the semiconductor manufacturing system 300 may not function if the controller 340 determines that the received signal does not meet the criteria.
  • FIG. 6 shows the signal passing through three components, it is noted that other embodiments are also possible.
  • a separate signal source and signal receiver may be used for each respective component in the system that is to be authorized.
  • FIG. 7 shows a system with multiple components having an identification feature according to one embodiment.
  • an ion source 700 there is an ion source 700 , a shield bushing 710 , a bushing 720 , a bushing flange 730 and a source chamber 740 .
  • These components are physically arranged in this order.
  • One or more of these components may have an identification feature 760 that is enclosed in a cavity 780 where the top of the cavity 780 was sealed using UAM.
  • a controller 750 may be used to introduce a signal to the system.
  • This controller 750 may comprise a processing unit in communication with a storage element.
  • the storage element may be any non-transitory media, such as a dynamic memory (DRAM), a random access memory (RAM), a read only memory (ROM), an electrical erasable memory (EEROM), a FLASH memory, a magnetic media or an optical media. Other types of media may also be used to create the storage element.
  • the storage element contains instructions, which when executed by the processing unit, enable the controller 750 to perform the functions described herein.
  • the processing unit may be any suitable device, such as a general purpose processor, a special purpose processor, or an embedded processor.
  • the controller 750 may be in communication with an output 755 which transmits the signal.
  • this signal may be a fiberoptic signal, an analog signal or a digital signal.
  • This signal is transmitted between the components through the cavity disposed in each component.
  • one or more of these components may include an identification feature 760 that modifies the signal as it is transmitted through the component.
  • a receiver 770 which may be a light sensor or an electrical receiver, is disposed at the distal end of the pathway defined by the various cavities.
  • the receiver 770 may be in communication with the controller 750 .
  • the controller 750 analyzes the signal received by the receiver 770 .
  • the controller 750 compares the received signal to an expected signal in terms of amplitude, frequency, duty cycle and phase.
  • the controller may interpret the received digital signal to decode it.
  • the controller 750 may determine that one or more components is not authorized for use in the system. This determination may be made based on the received amplitude, frequency, duty cycle, or phase. Based on this analysis, the controller 750 may take one or more actions. The controller 750 may alert the operator if one or more components are not authorized for use in the system. The controller 750 may also abort the operation of the system based on the results of the comparison or analysis.
  • FIG. 8 shows a system with multiple components having an identification feature according to another embodiment.
  • the pathway is looped so that it begins and ends at the same location.
  • the controller 750 may be in communication with an output 755 that is proximate one component, such as the source chamber 740 .
  • the receiver 770 is also located proximate the source chamber 740 .
  • the signal travels through the source chamber 740 , the bushing flange 730 , the bushing 720 , the shield bushing 710 , and the ion source 700 .
  • the ion source 700 also outputs the signal, which then travels through the shield bushing 710 , the bushing 720 , the bushing flange 730 , and the source chamber 740 before arriving at the receiver 770 .
  • each component except the ion source 700 ) has two cavities so that the signal can be looped back through the component.
  • the ion source 700 has a single cavity that may be arranged in a U shape.
  • FIGS. 6-8 show the controller as being a separate component, other embodiments are also possible.
  • the controller may reside within one of the cavities within one of the components.
  • controller 750 may modify one or more operating parameters of the system based on the results of the comparison or analysis.
  • one component such as the ion source 700 may be a replaceable component, where there are a plurality of possible ion sources that may be employed with the system.
  • the controller 750 may determine which ion source 700 has been installed. Based on the ion source, the controller 750 may change the bias and arc currents depending on the ion source that is installed. For example, if a large cathode ion source is installed, the cathode may utilize more heat to operate, so the bias current would be increased. For a small cathode source, the bias current may be significantly lower, so the controller 750 would automatically adjust these parameters depending on which ion source 700 is installed. Of course, this example is merely illustrative and other parameters may also be adjusted.
  • the controller 750 may perform one or more actions based on a characteristic of the component.
  • the actions may include alerting an operator, disabling the system or modifying at least one operating parameter of the system.
  • the characteristic of the component may include whether that component is authorized to operate on the system, or may include the identity of the component.
  • FIG. 9 shows an ion implantation system according to one embodiment.
  • the ion source 910 may include an indirectly heated cathode (IHC), housed within a tungsten chamber. This ion source 910 may be contained within a larger housing 900 .
  • a turbo pump 901 may be used to maintain the interior of the larger housing 900 at a desired pressure. As the ion source 910 is typically biased at a substantial voltage, it may be necessary to electrically isolate the ion source 910 from the larger housing 900 . This may be achieved through the use of source bushings 915 .
  • an extraction assembly 920 made up of one or more electrodes which are appropriately biased to attract ions generated in the ion source 910 .
  • the electrodes draw these ions to, and then through the electrode.
  • These electrodes may be at different voltages, and therefore are electrically isolated from one another. These may be achieved through the use of an insulated manipulator assembly 925 , which holds the extraction assembly 920 in place.
  • the extracted ion beam 930 may then enter a mass analyzer 940 .
  • One or more liners 941 may be disposed within the mass analyzer 940 or within other components.
  • the ion beam flows through a guide tube (not shown) in the mass analyzer 940 .
  • a focusing element such as a quadrupole lens 944 or Einsel lens, may be used to focus the ion beam.
  • a resolving aperture 945 is disposed at the output of the mass analyzer 940 , which extracts only ions having the desired charge/mass ratio.
  • the analyzed ion beam 950 which now contains only the ions of interest, is then implanted into the substrate 990 , which may be mounted on a substrate support or platen 980 .
  • a corrector magnet 960 and one or more acceleration or deceleration stages 970 may be employed to adjust the speed of the analyzed ion beam 950 .
  • These acceleration or deceleration stages 970 may be disposed proximate a process chamber 985 .
  • the substrate 990 and substrate support or platen 980 may be disposed in the process chamber 985 .
  • dose and Faraday cups 995 may be disposed in the process chamber 985 to measure current.
  • these components may be equipped with a cavity where the top of the cavity is sealed using UAW and contains an identification feature.
  • Some of these components include the ion source 910 , the extraction assembly 920 , the platen 980 , the turbo pump 901 , the mass analyzer 940 , the corrector magnet 960 , the acceleration or deceleration stages 970 , the resolving aperture 945 , the liners 941 , the dose and Faraday cups 995 and the various magnets in the system.
  • the present system has many advantages. First, it may be advantageous to detect the presence of components in an ion implantation system that are not authorized to operate in that system. This ability may prevent the ion implantation system from malfunctioning or failing to operate according to specified parameters. Additionally, the use of ultrasonic additive manufacturing to weld metal over the identification feature in the component presents a serious detriment to those that may attempt to produce non-sanctioned replacement parts for the ion implantation system. Second, the ability to determine the components that make up the ion implantation system may allow the controller to alter or modify parameters based on the identified components. This may reduce the possibility of human error during configuration.

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US15/894,436 US10217654B1 (en) 2018-02-12 2018-02-12 Embedded features for interlocks using additive manufacturing
CN201980012729.1A CN111699541B (zh) 2018-02-12 2019-01-10 离子植入系统
KR1020207025768A KR20200110448A (ko) 2018-02-12 2019-01-10 이온 주입 시스템
JP2020542594A JP7483614B2 (ja) 2018-02-12 2019-01-10 付加製造を使用したインターロックのための埋め込まれた特徴
US16/244,623 US10672634B2 (en) 2018-02-12 2019-01-10 Embedded features for interlocks using additive manufacturing
KR1020237017830A KR20230078835A (ko) 2018-02-12 2019-01-10 이온 주입 시스템
PCT/US2019/013014 WO2019156770A1 (en) 2018-02-12 2019-01-10 Embedded features for interlocks using additive manufacturing
TW108102349A TWI743437B (zh) 2018-02-12 2019-01-22 離子植入系統

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US20190252226A1 (en) 2019-08-15
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TW201935514A (zh) 2019-09-01
WO2019156770A1 (en) 2019-08-15
US10672634B2 (en) 2020-06-02
JP7483614B2 (ja) 2024-05-15
CN111699541B (zh) 2024-02-06
JP2021513196A (ja) 2021-05-20
KR20230078835A (ko) 2023-06-02

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