UA92392C2 - СПОСОБ ПОЛУЧЕНИЯ Слитков поликристаллического кремния индукционным методом И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ - Google Patents
СПОСОБ ПОЛУЧЕНИЯ Слитков поликристаллического кремния индукционным методом И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ Download PDFInfo
- Publication number
- UA92392C2 UA92392C2 UAA200814479A UAA200814479A UA92392C2 UA 92392 C2 UA92392 C2 UA 92392C2 UA A200814479 A UAA200814479 A UA A200814479A UA A200814479 A UAA200814479 A UA A200814479A UA 92392 C2 UA92392 C2 UA 92392C2
- Authority
- UA
- Ukraine
- Prior art keywords
- ingot
- silicon
- heating
- melting
- polycrystalline silicon
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract description 39
- 238000000034 method Methods 0.000 title abstract description 36
- 230000006698 induction Effects 0.000 title abstract description 24
- 238000004519 manufacturing process Methods 0.000 title abstract description 17
- 238000010438 heat treatment Methods 0.000 abstract description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 49
- 229910052710 silicon Inorganic materials 0.000 abstract description 49
- 239000010703 silicon Substances 0.000 abstract description 49
- 238000002844 melting Methods 0.000 abstract description 47
- 230000008018 melting Effects 0.000 abstract description 46
- 238000001816 cooling Methods 0.000 abstract description 35
- 239000000155 melt Substances 0.000 abstract description 31
- 238000005266 casting Methods 0.000 abstract description 20
- 238000002425 crystallisation Methods 0.000 abstract description 11
- 230000008025 crystallization Effects 0.000 abstract description 11
- 239000012535 impurity Substances 0.000 description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 230000005672 electromagnetic field Effects 0.000 description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 235000021189 garnishes Nutrition 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004320 controlled atmosphere Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010309 melting process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 235000018936 Vitellaria paradoxa Nutrition 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- WCNLCIJMFAJCPX-UHFFFAOYSA-N pethidine hydrochloride Chemical compound Cl.C=1C=CC=CC=1C1(C(=O)OCC)CCN(C)CC1 WCNLCIJMFAJCPX-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004157 plasmatron Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 210000001685 thyroid gland Anatomy 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/02—Use of electric or magnetic effects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould
- B22D27/045—Directionally solidified castings
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011542082A JP5759382B2 (ja) | 2008-12-15 | 2009-12-14 | 誘導法により多結晶シリコンインゴットを製造する方法 |
| EP09802044.9A EP2376244B1 (en) | 2008-12-15 | 2009-12-14 | Process for producing multicrystalline silicon ingots by the induction method and apparatus for carrying out the same |
| PCT/UA2009/000067 WO2010071614A1 (en) | 2008-12-15 | 2009-12-14 | Process for producing multicrystalline silicon ingots by the induction method and apparatus for carrying out the same |
| KR1020117016416A KR101335147B1 (ko) | 2008-12-15 | 2009-12-14 | 유도방식에 의해 다결정 실리콘 잉곳들을 생산하는 방법 및 이를 위한 장치 |
| US13/139,612 US20110247364A1 (en) | 2008-12-15 | 2009-12-14 | Process for producing multicrystalline silicon ingots by the induction method and apparatus for carrying out the same |
| CN200980150565.5A CN102438773B (zh) | 2008-12-15 | 2009-12-14 | 由感应法生产多晶硅锭的方法及其实施装置 |
| US14/583,141 US9410266B2 (en) | 2008-12-15 | 2014-12-25 | Process for producing multicrystalline silicon ingots by the induction method, and apparatus for carrying out the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| UA2008014479 | 2008-12-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| UA92392C2 true UA92392C2 (ru) | 2010-10-25 |
Family
ID=42081430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| UAA200814479A UA92392C2 (ru) | 2008-12-15 | 2008-12-15 | СПОСОБ ПОЛУЧЕНИЯ Слитков поликристаллического кремния индукционным методом И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ |
Country Status (2)
| Country | Link |
|---|---|
| ES (1) | ES2619523T3 (ru) |
| UA (1) | UA92392C2 (ru) |
-
2008
- 2008-12-15 UA UAA200814479A patent/UA92392C2/ru unknown
-
2009
- 2009-12-14 ES ES09802044.9T patent/ES2619523T3/es active Active
Also Published As
| Publication number | Publication date |
|---|---|
| ES2619523T3 (es) | 2017-06-26 |
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