UA89717C2 - Тигель для обработки расплавленного кремния, способ его производства и применения - Google Patents

Тигель для обработки расплавленного кремния, способ его производства и применения

Info

Publication number
UA89717C2
UA89717C2 UAA200809060A UAA200809060A UA89717C2 UA 89717 C2 UA89717 C2 UA 89717C2 UA A200809060 A UAA200809060 A UA A200809060A UA A200809060 A UAA200809060 A UA A200809060A UA 89717 C2 UA89717 C2 UA 89717C2
Authority
UA
Ukraine
Prior art keywords
crucible
treatment
basic body
molten silicon
poduction
Prior art date
Application number
UAA200809060A
Other languages
English (en)
Ukrainian (uk)
Inventor
Гилберт Ранкули
Original Assignee
Везувиус Крусибл Компани
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Везувиус Крусибл Компани filed Critical Везувиус Крусибл Компани
Publication of UA89717C2 publication Critical patent/UA89717C2/ru

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002Crucibles or containers for supporting the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10Crucibles or containers for supporting the melt
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Mold Materials And Core Materials (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Press Drives And Press Lines (AREA)

Abstract

Изобретение касается тигля для обработки расплавленного кремния, который включает основной корпус с нижней поверхностью и боковыми стенками, которые ограничивают внутренний объем. В соответствии с изобретением, основной корпус содержит 65 масс. % карбида кремния, от 12 до 30 масс. % составляющей, выбранной из оксида или нитрида кремния. Кроме того, основной корпус содержит по крайней мере одно покрытие из оксида кремния и/или нитрида кремния, по крайней мере на поверхностях, которые ограничивают внутренний объем тигля, в отличие от тиглей существующего уровня техники, и такой тигель может быть использоваться несколько раз без любого видимого нарушения его физической целостности.
UAA200809060A 2006-01-12 2007-01-12 Тигель для обработки расплавленного кремния, способ его производства и применения UA89717C2 (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP06447007A EP1811064A1 (fr) 2006-01-12 2006-01-12 Creuset pour le traitement de silicium à l'état fondu

Publications (1)

Publication Number Publication Date
UA89717C2 true UA89717C2 (ru) 2010-02-25

Family

ID=36507605

Family Applications (1)

Application Number Title Priority Date Filing Date
UAA200809060A UA89717C2 (ru) 2006-01-12 2007-01-12 Тигель для обработки расплавленного кремния, способ его производства и применения

Country Status (20)

Country Link
US (1) US7833490B2 (ru)
EP (2) EP1811064A1 (ru)
JP (1) JP5400392B2 (ru)
KR (1) KR101212916B1 (ru)
CN (1) CN101370968A (ru)
AT (1) ATE480650T1 (ru)
AU (1) AU2007204406B2 (ru)
BR (1) BRPI0706222A2 (ru)
CA (1) CA2634199C (ru)
DE (1) DE602007009043D1 (ru)
DK (1) DK1979512T3 (ru)
ES (1) ES2349158T3 (ru)
NO (1) NO20083468L (ru)
PT (1) PT1979512E (ru)
RU (1) RU2423558C2 (ru)
SI (1) SI1979512T1 (ru)
TW (1) TWI395841B (ru)
UA (1) UA89717C2 (ru)
WO (1) WO2007080120A1 (ru)
ZA (1) ZA200805509B (ru)

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TWI400369B (zh) * 2005-10-06 2013-07-01 Vesuvius Crucible Co 用於矽結晶的坩堝及其製造方法
TWI401343B (zh) * 2009-06-25 2013-07-11 Wafer Works Corp 具有保護層之石英玻璃坩堝及其製造方法
EP2454398A2 (en) * 2009-07-16 2012-05-23 MEMC Singapore Pte. Ltd. Coated crucibles and methods for preparing and use thereof
NO20092797A1 (no) * 2009-07-31 2011-02-01 Nordic Ceramics As Digel
DE102010000687B4 (de) * 2010-01-05 2012-10-18 Solarworld Innovations Gmbh Tiegel und Verfahren zur Herstellung von Silizium-Blöcken
US20110180229A1 (en) * 2010-01-28 2011-07-28 Memc Singapore Pte. Ltd. (Uen200614794D) Crucible For Use In A Directional Solidification Furnace
JP2011219286A (ja) * 2010-04-06 2011-11-04 Koji Tomita シリコン及び炭化珪素の製造方法及び製造装置
CN103298983B (zh) * 2010-12-22 2016-03-16 施托伊勒太阳能有限公司 坩埚
WO2012092369A2 (en) * 2010-12-30 2012-07-05 Saint-Gobain Ceramics & Plastics, Inc. Crucible body and method of forming same
US20120248286A1 (en) 2011-03-31 2012-10-04 Memc Singapore Pte. Ltd. (Uen200614794D) Systems For Insulating Directional Solidification Furnaces
CN102862986A (zh) * 2012-04-19 2013-01-09 北京民海艳科技有限公司 冶金法生产太阳能多晶硅用定向凝固器及多晶硅生产方法
CN103774209B (zh) * 2012-10-26 2016-06-15 阿特斯(中国)投资有限公司 硅铸锭用坩埚及其涂层制备方法
CN103060908A (zh) * 2013-01-06 2013-04-24 奥特斯维能源(太仓)有限公司 双层陶瓷坩埚
TWI663126B (zh) * 2014-07-09 2019-06-21 法商維蘇威法國公司 包含可磨塗層之輥、其製造方法及其用途
JP5935021B2 (ja) * 2015-02-20 2016-06-15 蒲池 豊 シリコン結晶の製造方法
CN111848201B (zh) * 2020-07-24 2022-09-02 西安超码科技有限公司 一种具有碳化硅/硅涂层的炭/炭坩埚及其制备方法

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JPS62241872A (ja) * 1986-04-10 1987-10-22 黒崎窯業株式会社 反応焼結Si↓3N↓4−SiC複合体の製造方法
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EP1739209A1 (en) 2005-07-01 2007-01-03 Vesuvius Crucible Company Crucible for the crystallization of silicon
TWI400369B (zh) 2005-10-06 2013-07-01 Vesuvius Crucible Co 用於矽結晶的坩堝及其製造方法

Also Published As

Publication number Publication date
ATE480650T1 (de) 2010-09-15
AU2007204406A1 (en) 2007-07-19
US20080292524A1 (en) 2008-11-27
SI1979512T1 (sl) 2010-11-30
CA2634199C (en) 2013-09-24
CN101370968A (zh) 2009-02-18
DK1979512T3 (da) 2011-01-17
JP5400392B2 (ja) 2014-01-29
DE602007009043D1 (de) 2010-10-21
KR20080082978A (ko) 2008-09-12
AU2007204406B2 (en) 2012-02-16
RU2008132975A (ru) 2010-02-20
BRPI0706222A2 (pt) 2011-03-22
TW200738919A (en) 2007-10-16
EP1979512A1 (en) 2008-10-15
ES2349158T3 (es) 2010-12-28
PT1979512E (pt) 2010-11-09
CA2634199A1 (en) 2007-07-19
TWI395841B (zh) 2013-05-11
NO20083468L (no) 2008-08-11
EP1811064A1 (fr) 2007-07-25
KR101212916B1 (ko) 2012-12-14
US7833490B2 (en) 2010-11-16
RU2423558C2 (ru) 2011-07-10
EP1979512B1 (en) 2010-09-08
JP2009523115A (ja) 2009-06-18
WO2007080120A1 (en) 2007-07-19
ZA200805509B (en) 2009-12-30

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