UA56148C2 - Кмон-пристрій - Google Patents

Кмон-пристрій Download PDF

Info

Publication number
UA56148C2
UA56148C2 UA98062924A UA98062924A UA56148C2 UA 56148 C2 UA56148 C2 UA 56148C2 UA 98062924 A UA98062924 A UA 98062924A UA 98062924 A UA98062924 A UA 98062924A UA 56148 C2 UA56148 C2 UA 56148C2
Authority
UA
Ukraine
Prior art keywords
zone
contacts
substrate
kmon
pmon
Prior art date
Application number
UA98062924A
Other languages
English (en)
Russian (ru)
Ukrainian (uk)
Inventor
Хольгер Седлак
Original Assignee
Сіменс Акцієнгезельшафт
Сименс Акциенгезельшафт
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Сіменс Акцієнгезельшафт, Сименс Акциенгезельшафт filed Critical Сіменс Акцієнгезельшафт
Publication of UA56148C2 publication Critical patent/UA56148C2/uk

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
UA98062924A 1995-12-06 1996-11-18 Кмон-пристрій UA56148C2 (uk)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19545554A DE19545554A1 (de) 1995-12-06 1995-12-06 CMOS-Anordnung
PCT/DE1996/002189 WO1997021240A2 (de) 1995-12-06 1996-11-18 Cmos-anordnung

Publications (1)

Publication Number Publication Date
UA56148C2 true UA56148C2 (uk) 2003-05-15

Family

ID=7779372

Family Applications (1)

Application Number Title Priority Date Filing Date
UA98062924A UA56148C2 (uk) 1995-12-06 1996-11-18 Кмон-пристрій

Country Status (10)

Country Link
US (1) US6160295A (en:Method)
EP (1) EP0865669A2 (en:Method)
JP (1) JP3357069B2 (en:Method)
KR (1) KR100415129B1 (en:Method)
CN (1) CN1230903C (en:Method)
DE (1) DE19545554A1 (en:Method)
IN (1) IN190506B (en:Method)
RU (1) RU2170475C2 (en:Method)
UA (1) UA56148C2 (en:Method)
WO (1) WO1997021240A2 (en:Method)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1549130A (en) * 1977-06-01 1979-08-01 Hughes Microelectronics Ltd Cm Monolithic integrated circuit
JPS5591162A (en) * 1978-12-27 1980-07-10 Fujitsu Ltd Semiconductor device
JPS58223362A (ja) * 1982-06-21 1983-12-24 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPH0669086B2 (ja) * 1983-03-29 1994-08-31 株式会社日立製作所 半導体装置
EP0197730A3 (en) * 1985-03-29 1987-08-19 Advanced Micro Devices, Inc. Latch-up resistant integrated circuit and method of manufacture
DE3685169D1 (de) * 1985-08-26 1992-06-11 Siemens Ag Integrierte schaltung in komplementaerer schaltungstechnik mit einem substratvorspannungs-generator und einer schottky-diode.
US5336911A (en) * 1988-05-10 1994-08-09 Seiko Epson Corporation Semiconductor device
JPH02152254A (ja) * 1988-12-02 1990-06-12 Mitsubishi Electric Corp 半導体集積回路装置
JPH0396272A (ja) * 1989-09-08 1991-04-22 Toshiba Micro Electron Kk Ｃｍｏｓ半導体装置
RU2018994C1 (ru) * 1992-03-31 1994-08-30 Константин Иванович Баринов Элемент памяти
KR0120572B1 (ko) * 1994-05-04 1997-10-20 김주용 반도체 소자 및 그 제조방법

Also Published As

Publication number Publication date
WO1997021240A3 (de) 1997-07-31
DE19545554A1 (de) 1997-06-12
US6160295A (en) 2000-12-12
KR100415129B1 (ko) 2004-04-13
KR19990071877A (ko) 1999-09-27
CN1230903C (zh) 2005-12-07
JP3357069B2 (ja) 2002-12-16
JP2000501247A (ja) 2000-02-02
RU2170475C2 (ru) 2001-07-10
WO1997021240A2 (de) 1997-06-12
IN190506B (en:Method) 2003-08-02
CN1207829A (zh) 1999-02-10
EP0865669A2 (de) 1998-09-23

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