UA18259A - Спосіб управліhhя плазмовим осаджеhhям тоhких плівок у вакуумі - Google Patents

Спосіб управліhhя плазмовим осаджеhhям тоhких плівок у вакуумі

Info

Publication number
UA18259A
UA18259A UA4356339A UA4356339A UA18259A UA 18259 A UA18259 A UA 18259A UA 4356339 A UA4356339 A UA 4356339A UA 4356339 A UA4356339 A UA 4356339A UA 18259 A UA18259 A UA 18259A
Authority
UA
Ukraine
Prior art keywords
vacuum
control
starwritermethod
thin films
plasma deposition
Prior art date
Application number
UA4356339A
Other languages
English (en)
Russian (ru)
Inventor
Т.Фелтс Джон
Т. Фелтс Джон
С.Лопата Юджин
С. Лопата Юджин
Original Assignee
Дзе Бок Груп, Інк.
Дзе Бок Груп, Инк.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Дзе Бок Груп, Інк., Дзе Бок Груп, Инк. filed Critical Дзе Бок Груп, Інк.
Publication of UA18259A publication Critical patent/UA18259A/uk

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/12—Bonding of a preformed macromolecular material to the same or other solid material such as metal, glass, leather, e.g. using adhesives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Fluid Mechanics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)

Abstract

Винахід належить до плазмової діагностики та управління процесом осадження тонких плівок у вакуумі, зокрема, до технологій, які використовують розпилення, осадження з хімічних пар і плазмову полімеризацію. Метою винаходу є підвищення коефіцієнту виходу готової продукції за рахунок забезпечення однорідних і повторюваних характеристик плівок.
UA4356339A 1987-07-15 1988-07-14 Спосіб управліhhя плазмовим осаджеhhям тоhких плівок у вакуумі UA18259A (uk)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7392887A 1987-07-15 1987-07-15
US07/191,448 US4888199A (en) 1987-07-15 1988-05-09 Plasma thin film deposition process

Publications (1)

Publication Number Publication Date
UA18259A true UA18259A (uk) 1997-12-25

Family

ID=26755049

Family Applications (1)

Application Number Title Priority Date Filing Date
UA4356339A UA18259A (uk) 1987-07-15 1988-07-14 Спосіб управліhhя плазмовим осаджеhhям тоhких плівок у вакуумі

Country Status (13)

Country Link
US (1) US4888199A (uk)
EP (1) EP0299752B1 (uk)
JP (1) JP2539000B2 (uk)
KR (1) KR910009981B1 (uk)
CN (1) CN1024814C (uk)
AT (1) ATE110794T1 (uk)
AU (1) AU616894B2 (uk)
CA (1) CA1329166C (uk)
DE (1) DE3851281T2 (uk)
ES (1) ES2059523T3 (uk)
MX (1) MX171506B (uk)
RU (1) RU1797628C (uk)
UA (1) UA18259A (uk)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5348736A (en) 1989-06-21 1994-09-20 Colgate-Palmolive Company Stabilized hair-treating compositions
LU87880A1 (fr) * 1991-01-24 1992-10-15 Europ Communities Methode permettant de deposer une couche mince par photo-ablation
MX9303141A (es) * 1992-05-28 1994-04-29 Polar Materials Inc Metodos y aparatos para depositar recubrimientos de barrera.
US5395642A (en) * 1992-10-21 1995-03-07 Solvay Deutschland Gmbh Process for depositing layers having high specific electrical conductivity
DE4320931A1 (de) * 1992-10-21 1994-04-28 Solvay Deutschland Abscheidung von Schichten mit hoher spezifischer elektrischer Leitfähigkeit
US5240736A (en) * 1992-10-26 1993-08-31 Ford Motor Company Method and apparatus for in-situ measuring filament temperature and the thickness of a diamond film
US5429730A (en) * 1992-11-02 1995-07-04 Kabushiki Kaisha Toshiba Method of repairing defect of structure
CH685755A5 (de) * 1993-06-03 1995-09-29 Tetra Pak Suisse Sa Verfahren zur Herstellung eines Schichtstoffes.
CA2123479C (en) * 1993-07-01 1999-07-06 Peter A. Sieck Anode structure for magnetron sputtering systems
PL314108A1 (en) * 1993-10-29 1996-08-19 Balzers Hochvakuum Coated formpiece, method of making same and application thereof
US5534066A (en) * 1993-10-29 1996-07-09 International Business Machines Corporation Fluid delivery apparatus having an infrared feedline sensor
CH687614A5 (de) * 1994-02-04 1997-01-15 Tetra Pak Suisse Sa Verfahren zum Versehen einer Verpackung mit hervorragenden Sperreigenschaften in bezug auf Gase.
CH687601A5 (de) * 1994-02-04 1997-01-15 Tetra Pak Suisse Sa Verfahren zur Herstellung von im Innern sterilen Verpackungen mit hervorragenden Sperreigenschaften.
DK0693975T4 (da) * 1994-02-16 2003-08-18 Coca Cola Co Hule beholdere med indifferent eller uigennemtrængelig indre overflade gennem plasmaunderstøttet overfladereaktion eller polymerisation på overfladen
US6149982A (en) * 1994-02-16 2000-11-21 The Coca-Cola Company Method of forming a coating on an inner surface
US5571470A (en) 1994-02-18 1996-11-05 The Coca-Cola Company Method for fabricating a thin inner barrier layer within a preform
US5741505A (en) * 1995-01-20 1998-04-21 Mars, Incorporated Edible products having inorganic coatings
US5685797A (en) * 1995-05-17 1997-11-11 United Technologies Corporation Coated planet gear journal bearing and process of making same
US5788869A (en) * 1995-11-02 1998-08-04 Digital Equipment Corporation Methodology for in situ etch stop detection and control of plasma etching process and device design to minimize process chamber contamination
US5658423A (en) * 1995-11-27 1997-08-19 International Business Machines Corporation Monitoring and controlling plasma processes via optical emission using principal component analysis
US5968324A (en) * 1995-12-05 1999-10-19 Applied Materials, Inc. Method and apparatus for depositing antireflective coating
US6127262A (en) 1996-06-28 2000-10-03 Applied Materials, Inc. Method and apparatus for depositing an etch stop layer
DE19629877C1 (de) * 1996-07-24 1997-03-27 Schott Glaswerke CVD-Verfahren und Vorrichtung zur Innenbeschichtung von Hohlkörpern
US6223683B1 (en) 1997-03-14 2001-05-01 The Coca-Cola Company Hollow plastic containers with an external very thin coating of low permeability to gases and vapors through plasma-assisted deposition of inorganic substances and method and system for making the coating
US5778681A (en) * 1997-04-15 1998-07-14 Varian Associates, Inc. Cooling device for cooling heatable gas chromatography analyte sample injector
JPH1129863A (ja) * 1997-07-10 1999-02-02 Canon Inc 堆積膜製造方法
US8075789B1 (en) * 1997-07-11 2011-12-13 Applied Materials, Inc. Remote plasma cleaning source having reduced reactivity with a substrate processing chamber
WO1999007914A1 (en) * 1997-08-08 1999-02-18 Lockheed Martin Corporation Multi-spectroscopic emission line control for thin film sputtering process
US6024831A (en) * 1997-08-20 2000-02-15 Vanguard International Semiconductor Corporation Method and apparatus for monitoring plasma chamber condition by observing plasma stability
US6203898B1 (en) 1997-08-29 2001-03-20 3M Innovatave Properties Company Article comprising a substrate having a silicone coating
US6106676A (en) * 1998-04-16 2000-08-22 The Boc Group, Inc. Method and apparatus for reactive sputtering employing two control loops
US6251233B1 (en) 1998-08-03 2001-06-26 The Coca-Cola Company Plasma-enhanced vacuum vapor deposition system including systems for evaporation of a solid, producing an electric arc discharge and measuring ionization and evaporation
TW409383B (en) * 1998-12-31 2000-10-21 World Wiser Electronics Inc Apparatus of plug hole process and the method thereof
US6366353B1 (en) 1999-11-05 2002-04-02 Corning Incorporated Method to determine the identity of a material in an object
TW413726B (en) * 1999-11-20 2000-12-01 Prec Instr Dev Ct Method for monitoring thickness uniformity of films based on spectroscopic measurement
US6455098B2 (en) * 2000-03-09 2002-09-24 Semix Incorporated Wafer processing apparatus and method
US6740378B1 (en) * 2000-08-24 2004-05-25 The Coca-Cola Company Multilayer polymeric/zero valent material structure for enhanced gas or vapor barrier and uv barrier and method for making same
US6720052B1 (en) 2000-08-24 2004-04-13 The Coca-Cola Company Multilayer polymeric/inorganic oxide structure with top coat for enhanced gas or vapor barrier and method for making same
US6613656B2 (en) * 2001-02-13 2003-09-02 Micron Technology, Inc. Sequential pulse deposition
US6599584B2 (en) 2001-04-27 2003-07-29 The Coca-Cola Company Barrier coated plastic containers and coating methods therefor
ES2250891T3 (es) * 2002-04-15 2006-04-16 The Coca-Cola Company Composicion revestimiento que contiene un aditivo epoxidico y estructuras revestidas con el mismo.
GB0222331D0 (en) * 2002-09-26 2002-10-30 Teer Coatings Ltd A method for depositing multilayer coatings with controlled thickness
WO2004031440A1 (ja) * 2002-09-30 2004-04-15 Toppan Printing Co., Ltd. 薄膜成膜方法、薄膜成膜装置および薄膜成膜プロセスの監視方法
US6879744B2 (en) * 2003-01-07 2005-04-12 Georgi A. Atanasov Optical monitoring of thin film deposition
US20050266173A1 (en) * 2004-05-26 2005-12-01 Tokyo Electron Limited Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process
FR2892854A1 (fr) * 2005-10-27 2007-05-04 Sidel Sas Methode de surveillance d'un plasma, dispositif pour la mise en oeuvre de cette methode, application de cette methode au depot d'un film sur corps creux en pet
CN1851420B (zh) * 2005-12-08 2010-12-08 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体内电子温度测量装置
US20090130362A1 (en) * 2007-11-21 2009-05-21 Egan Visual Inc. Multiuse dry erase writing and projection surface
US9997325B2 (en) * 2008-07-17 2018-06-12 Verity Instruments, Inc. Electron beam exciter for use in chemical analysis in processing systems
US8304262B2 (en) * 2011-02-17 2012-11-06 Lam Research Corporation Wiggling control for pseudo-hardmask
DE102011051226A1 (de) * 2011-06-21 2012-12-27 Q-Cells Se Plasma-unterstütztes Abscheideverfahren und Vorrichtung zu dessen Durchführung
TWI495746B (zh) * 2013-11-13 2015-08-11 Mingdao University 沉積系統
JP6158111B2 (ja) * 2014-02-12 2017-07-05 東京エレクトロン株式会社 ガス供給方法及び半導体製造装置
KR102461087B1 (ko) * 2017-09-20 2022-10-31 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 이온화 프로세스를 사용하여 전기화학 셀을 위한 알루미나를 형성하는 방법
CN110632973B (zh) * 2019-09-24 2021-07-09 中国航空工业集团公司沈阳飞机设计研究所 一种电磁辐射控制方法及其装置
CN114622183A (zh) * 2020-12-11 2022-06-14 湖南红太阳光电科技有限公司 一种制备氧化硅薄膜的方法
CN114615786B (zh) * 2022-01-28 2024-07-23 北京控制工程研究所 一种磁响应磁等离子体动力推力器阴极及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4006404A (en) * 1976-01-30 1977-02-01 The United States Of America As Represented By The Secretary Of The Navy Pulsed plasma probe
DE2947542A1 (de) * 1979-11-26 1981-06-04 Leybold-Heraeus GmbH, 5000 Köln Einrichtung zur ueberwachung und/oder steuerung von plasmaprozessen
FR2586156A1 (fr) * 1985-08-07 1987-02-13 Hochvakuum Dresden Veb Procede pour regler la densite de vapeur dans des processus de revetement utilisant un plasma avec des evaporateurs a decharge d'arc, et dispositif correspondant pour revetir des substrats a l'aide de plasma
GB2181461B (en) * 1985-10-10 1989-09-27 Canadian Patents Dev Doping semiconductor compounds by reactive sputtering
JPS6289869A (ja) * 1985-10-15 1987-04-24 Sumitomo Electric Ind Ltd 硬質炭素膜の気相合成法
JPS6293382A (ja) * 1985-10-21 1987-04-28 Mitsubishi Electric Corp 薄膜形成装置

Also Published As

Publication number Publication date
EP0299752A2 (en) 1989-01-18
DE3851281T2 (de) 1995-04-13
KR910009981B1 (ko) 1991-12-09
MX171506B (es) 1993-11-03
CN1024814C (zh) 1994-06-01
EP0299752A3 (en) 1990-04-11
US4888199A (en) 1989-12-19
JP2539000B2 (ja) 1996-10-02
AU1901288A (en) 1989-01-19
RU1797628C (ru) 1993-02-23
CA1329166C (en) 1994-05-03
EP0299752B1 (en) 1994-08-31
JPS6487777A (en) 1989-03-31
DE3851281D1 (de) 1994-10-06
ES2059523T3 (es) 1994-11-16
KR890002287A (ko) 1989-04-10
CN1030615A (zh) 1989-01-25
ATE110794T1 (de) 1994-09-15
AU616894B2 (en) 1991-11-14

Similar Documents

Publication Publication Date Title
UA18259A (uk) Спосіб управліhhя плазмовим осаджеhhям тоhких плівок у вакуумі
CA2069329A1 (en) Method for coating substrates with silicon based compounds
GB1478687A (en) Method and a device for the rapid deposition of oxydes in thin layers
EP0328257A3 (en) Magnetron sputtering apparatus and process
EP0327406A3 (en) Plasma processing method and apparatus for the deposition of thin films
ES8500874A1 (es) Un procedimiento para depositar sobre un substrato de vidriocalentado una pelicula de control solar transparente, absorbente y reflectante.
TW352457B (en) Chemical vapor phase growth apparatus (3)
EP0385475A3 (en) Method of forming a transparent conductive film
ES8503892A1 (es) Procedimiento para depositar un material transparente electricamente aislante sobre un dispositivo fotovoltaico
GB1499857A (en) Glow discharge etching
EP0359567A3 (en) Plasma processing method and apparatus
EP0291113A3 (en) Process for preparing metallizable polyolefin films
ES8700977A1 (es) Un aparato para depositar una pelicula transmisora de luz y electricamente conductora en un sustrato
EP0686708A4 (en) METHOD AND APPARATUS FOR FORMING A LAYER -------------------
ES483670A1 (es) Un metodo para producir una pelicula magnetica amorfa mejo- rada
EP0388957A3 (en) Process for depositing tantalum oxide film and chemical vapor deposition system used therefore
EP0150878A3 (en) Apparatus for the coating of a substrate by plasma cvd or cathodic sputtering, process using this apparatus and application of this process to the manufacture of a thin film strain gage system
GB1349833A (en) Production of thin films of tantalum
GB1440357A (en) Method for making amorphous semiconductor films
FR2372243A1 (fr) Procede et installation pour revetir, en continu, des substrats en verre ou en ceramique par pulverisation cathodique
CA2113048A1 (en) Fabrication process of sio2 electrets and to the electrets obtained
JPS56163266A (en) Manufacture of dial plate for timepiece
JPS6455379A (en) Deposited film forming device by bias sputtering
JPS6461433A (en) Production of cycloolfein
FR2314264A2 (fr) Procede de depot d'une couche mince et tres pure d'un materiau forme par une reaction chimique en phase gazeuse