ATE110794T1 - Kontrolle eines verfahrens zur abscheidung eines dünnen filmes mittels plasma. - Google Patents

Kontrolle eines verfahrens zur abscheidung eines dünnen filmes mittels plasma.

Info

Publication number
ATE110794T1
ATE110794T1 AT88306431T AT88306431T ATE110794T1 AT E110794 T1 ATE110794 T1 AT E110794T1 AT 88306431 T AT88306431 T AT 88306431T AT 88306431 T AT88306431 T AT 88306431T AT E110794 T1 ATE110794 T1 AT E110794T1
Authority
AT
Austria
Prior art keywords
plasma
thin film
control
emission
ratioed
Prior art date
Application number
AT88306431T
Other languages
English (en)
Inventor
John T Felts
Eugene S Lopata
Original Assignee
Boc Group Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boc Group Inc filed Critical Boc Group Inc
Application granted granted Critical
Publication of ATE110794T1 publication Critical patent/ATE110794T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/12—Bonding of a preformed macromolecular material to the same or other solid material such as metal, glass, leather, e.g. using adhesives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Plasma & Fusion (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)
AT88306431T 1987-07-15 1988-07-13 Kontrolle eines verfahrens zur abscheidung eines dünnen filmes mittels plasma. ATE110794T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7392887A 1987-07-15 1987-07-15
US07/191,448 US4888199A (en) 1987-07-15 1988-05-09 Plasma thin film deposition process

Publications (1)

Publication Number Publication Date
ATE110794T1 true ATE110794T1 (de) 1994-09-15

Family

ID=26755049

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88306431T ATE110794T1 (de) 1987-07-15 1988-07-13 Kontrolle eines verfahrens zur abscheidung eines dünnen filmes mittels plasma.

Country Status (13)

Country Link
US (1) US4888199A (de)
EP (1) EP0299752B1 (de)
JP (1) JP2539000B2 (de)
KR (1) KR910009981B1 (de)
CN (1) CN1024814C (de)
AT (1) ATE110794T1 (de)
AU (1) AU616894B2 (de)
CA (1) CA1329166C (de)
DE (1) DE3851281T2 (de)
ES (1) ES2059523T3 (de)
MX (1) MX171506B (de)
RU (1) RU1797628C (de)
UA (1) UA18259A (de)

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DE19629877C1 (de) * 1996-07-24 1997-03-27 Schott Glaswerke CVD-Verfahren und Vorrichtung zur Innenbeschichtung von Hohlkörpern
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US6106676A (en) * 1998-04-16 2000-08-22 The Boc Group, Inc. Method and apparatus for reactive sputtering employing two control loops
US6251233B1 (en) 1998-08-03 2001-06-26 The Coca-Cola Company Plasma-enhanced vacuum vapor deposition system including systems for evaporation of a solid, producing an electric arc discharge and measuring ionization and evaporation
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CN1851420B (zh) * 2005-12-08 2010-12-08 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体内电子温度测量装置
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CN110632973B (zh) * 2019-09-24 2021-07-09 中国航空工业集团公司沈阳飞机设计研究所 一种电磁辐射控制方法及其装置
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Also Published As

Publication number Publication date
KR910009981B1 (ko) 1991-12-09
CN1024814C (zh) 1994-06-01
CN1030615A (zh) 1989-01-25
UA18259A (uk) 1997-12-25
AU616894B2 (en) 1991-11-14
EP0299752A2 (de) 1989-01-18
ES2059523T3 (es) 1994-11-16
EP0299752A3 (en) 1990-04-11
US4888199A (en) 1989-12-19
KR890002287A (ko) 1989-04-10
RU1797628C (ru) 1993-02-23
AU1901288A (en) 1989-01-19
DE3851281D1 (de) 1994-10-06
JP2539000B2 (ja) 1996-10-02
MX171506B (es) 1993-11-03
DE3851281T2 (de) 1995-04-13
CA1329166C (en) 1994-05-03
EP0299752B1 (de) 1994-08-31
JPS6487777A (en) 1989-03-31

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