ES8700977A1 - Un aparato para depositar una pelicula transmisora de luz y electricamente conductora en un sustrato - Google Patents

Un aparato para depositar una pelicula transmisora de luz y electricamente conductora en un sustrato

Info

Publication number
ES8700977A1
ES8700977A1 ES540320A ES540320A ES8700977A1 ES 8700977 A1 ES8700977 A1 ES 8700977A1 ES 540320 A ES540320 A ES 540320A ES 540320 A ES540320 A ES 540320A ES 8700977 A1 ES8700977 A1 ES 8700977A1
Authority
ES
Spain
Prior art keywords
highly
deposition
onto
depositing
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES540320A
Other languages
English (en)
Other versions
ES540320A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23779157&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES8700977(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES540320A0 publication Critical patent/ES540320A0/es
Publication of ES8700977A1 publication Critical patent/ES8700977A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

MODIFICACIONES EN UN APARATO PARA DEPOSITAR UNA PELICULA TRANSMISORA DE LUZ Y ELECTRICAMENTE CONDUCTORA EN UN SUSTRATO. CONSISTENTES EN LA COMBINACION DE: UN MEDIO PARA INTRODUCIR GAS DE OXIGENO EN LA ZONA DE VAPOR; Y UN CATODO (30) ENERGIZADO CON RADIOFRECUENCIA COLOCADO ADYACENTE A LA FUENTE (4) DE MATERIAL METALICO (3) PARA DESARROLLAR UN PLASMA IONIZADO DE LOS ATOMOS DE GAS DE OXIGENO Y METALICOS EN LA ZONA DE VAPOR MEDIANTE LO CUAL EL APARATO (2) ESTA ADAPTADO PARA DEPOSITAR UNA PELICULA (22) DE OXIDO DE METAL SOBRE EL SUSTRATO. TIENE APLICACION PARA LA PRODUCCION DE DISPOSITIVOS FOTOVOLTAICOS.
ES540320A 1982-12-09 1985-02-12 Un aparato para depositar una pelicula transmisora de luz y electricamente conductora en un sustrato Expired ES8700977A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/448,139 US4605565A (en) 1982-12-09 1982-12-09 Method of depositing a highly conductive, highly transmissive film

Publications (2)

Publication Number Publication Date
ES540320A0 ES540320A0 (es) 1986-11-16
ES8700977A1 true ES8700977A1 (es) 1986-11-16

Family

ID=23779157

Family Applications (2)

Application Number Title Priority Date Filing Date
ES527828A Granted ES527828A0 (es) 1982-12-09 1983-12-06 Un metodo perfeccionado de depositar una pelicula electricamente conductora, delgada y transmisora de la luz
ES540320A Expired ES8700977A1 (es) 1982-12-09 1985-02-12 Un aparato para depositar una pelicula transmisora de luz y electricamente conductora en un sustrato

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES527828A Granted ES527828A0 (es) 1982-12-09 1983-12-06 Un metodo perfeccionado de depositar una pelicula electricamente conductora, delgada y transmisora de la luz

Country Status (12)

Country Link
US (1) US4605565A (es)
EP (1) EP0112132B1 (es)
JP (1) JPH0622202B2 (es)
KR (1) KR910007380B1 (es)
AU (1) AU564776B2 (es)
BR (1) BR8306745A (es)
CA (1) CA1219968A (es)
DE (1) DE3379489D1 (es)
ES (2) ES527828A0 (es)
IN (1) IN163675B (es)
MX (1) MX155196A (es)
ZA (1) ZA838885B (es)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514437A (en) * 1984-05-02 1985-04-30 Energy Conversion Devices, Inc. Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
US4639277A (en) * 1984-07-02 1987-01-27 Eastman Kodak Company Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material
WO1987005637A1 (en) * 1986-03-12 1987-09-24 Tobi Co., Ltd. Continuous ion plating device for rapidly moving film
JPH0734332B2 (ja) * 1986-03-12 1995-04-12 株式会社ト−ビ 透明導電性フイルムの製造方法
US4842705A (en) * 1987-06-04 1989-06-27 Siemens Aktiengesellschaft Method for manufacturing transparent conductive indium-tin oxide layers
JP2686266B2 (ja) * 1988-01-28 1997-12-08 株式会社日立製作所 受光素子の製造方法
US5008215A (en) * 1989-07-07 1991-04-16 Industrial Technology Research Institute Process for preparing high sensitivity semiconductive magnetoresistance element
EP0597670B1 (en) * 1992-11-09 1998-02-18 Chugai Ings Co., Ltd Method of manufacturing electromagnetic wave shielding plastic molding
US5698262A (en) * 1996-05-06 1997-12-16 Libbey-Owens-Ford Co. Method for forming tin oxide coating on glass
US6153271A (en) * 1999-12-30 2000-11-28 General Vacuum, Inc. Electron beam evaporation of transparent indium tin oxide
KR20010078862A (ko) * 2001-05-02 2001-08-22 조육형 산화물 증착 플라스틱 필름의 연속 열처리 방법 및 시스템
EP1289025A1 (fr) * 2001-08-30 2003-03-05 Universite De Neuchatel Procédé de dépot d'une couche d'oxyde sur un substrat et cellule photovoltaique utilisant ce substrat
AU2003262981A1 (en) * 2002-08-28 2004-03-19 Moxtronics, Inc. A hybrid beam deposition system and methods for fabricating zno films, p-type zno films, and zno-based ii-vi compound semiconductor devices
WO2004072329A1 (en) * 2003-02-14 2004-08-26 The University Of Hong Kong Device for and method of generating ozone
US20070054158A1 (en) * 2005-09-07 2007-03-08 Ovshinsky Stanford R Combination of photovoltaic devices and batteries which utilize a solid polymeric electrolyte
US9276142B2 (en) 2010-12-17 2016-03-01 First Solar, Inc. Methods for forming a transparent oxide layer for a photovoltaic device
US8476105B2 (en) 2010-12-22 2013-07-02 General Electric Company Method of making a transparent conductive oxide layer and a photovoltaic device
JP2014107421A (ja) * 2012-11-28 2014-06-09 Shimadzu Corp 成膜装置、放射線検出器および放射線検出器の製造方法
US10270010B2 (en) 2014-01-28 2019-04-23 Kaneka Corporation Substrate with transparent electrode and method for producing same
RU2609764C1 (ru) * 2015-10-26 2017-02-02 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" (МИЭТ) Способ получения аморфных пленок халькогенидных стеклообразных полупроводников с эффектом фазовой памяти

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4170662A (en) * 1974-11-05 1979-10-09 Eastman Kodak Company Plasma plating
US4342631A (en) * 1980-06-16 1982-08-03 Illinois Tool Works Inc. Gasless ion plating process and apparatus
US4336277A (en) * 1980-09-29 1982-06-22 The Regents Of The University Of California Transparent electrical conducting films by activated reactive evaporation
GB2085482B (en) * 1980-10-06 1985-03-06 Optical Coating Laboratory Inc Forming thin film oxide layers using reactive evaporation techniques
US4417092A (en) * 1981-03-16 1983-11-22 Exxon Research And Engineering Co. Sputtered pin amorphous silicon semi-conductor device and method therefor
JPS5880877A (ja) * 1981-11-10 1983-05-16 Konishiroku Photo Ind Co Ltd 太陽電池及びその製造方法

Also Published As

Publication number Publication date
IN163675B (es) 1988-10-29
EP0112132A3 (en) 1985-07-03
CA1219968A (en) 1987-03-31
EP0112132B1 (en) 1989-03-22
US4605565A (en) 1986-08-12
KR850003480A (ko) 1985-06-17
JPS59117178A (ja) 1984-07-06
ES540320A0 (es) 1986-11-16
JPH0622202B2 (ja) 1994-03-23
ES8505838A1 (es) 1985-06-16
BR8306745A (pt) 1984-07-17
ES527828A0 (es) 1985-06-16
AU2223183A (en) 1984-06-14
EP0112132A2 (en) 1984-06-27
AU564776B2 (en) 1987-08-27
ZA838885B (en) 1984-07-25
KR910007380B1 (ko) 1991-09-25
DE3379489D1 (en) 1989-04-27
MX155196A (es) 1988-02-01

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 20060920