TWM627664U - Shielding device and thin film deposition machine with shielding device - Google Patents

Shielding device and thin film deposition machine with shielding device Download PDF

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TWM627664U
TWM627664U TW110214701U TW110214701U TWM627664U TW M627664 U TWM627664 U TW M627664U TW 110214701 U TW110214701 U TW 110214701U TW 110214701 U TW110214701 U TW 110214701U TW M627664 U TWM627664 U TW M627664U
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shielding
sensing area
plate
unit
sensing
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TW110214701U
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Chinese (zh)
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林俊成
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天虹科技股份有限公司
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Abstract

本新型提供一種具有遮擋裝置的薄膜沉積機台,包括一反應腔體、一承載盤、一遮擋裝置及至少兩個光感測器,其中承載盤及部分的遮擋裝置位於反應腔體的容置空間內。遮擋裝置包括兩個遮擋單元及至少一驅動裝置,其中驅動裝置連接並驅動兩個遮擋單元朝相反方向擺動,使得兩個遮擋單元操作在開啟狀態及遮擋狀態。兩個遮擋單元的上表面皆設置一遮擋凸部及一感測區,其中感測區與遮擋凸部相鄰,用以阻隔汙染物沉積在感測區,以提高光感測器感測遮擋單元位置的準確性。 The present invention provides a thin film deposition machine with a shielding device, which includes a reaction chamber, a carrier plate, a shielding device and at least two light sensors, wherein the bearing plate and part of the shielding device are located in the accommodation of the reaction chamber. within the space. The shielding device includes two shielding units and at least one driving device, wherein the driving device connects and drives the two shielding units to swing in opposite directions, so that the two shielding units operate in the open state and the shielding state. The upper surfaces of the two shielding units are provided with a shielding convex portion and a sensing area, wherein the sensing area is adjacent to the shielding convex portion, which is used to prevent pollutants from depositing in the sensing area, so as to improve the sensing shielding of the light sensor Accuracy of unit location.

Description

遮擋裝置及具有遮擋裝置的薄膜沉積機台 Shielding device and thin film deposition machine with shielding device

本新型有關於一種具有遮擋裝置的薄膜沉積機台,主要於遮擋單元上設置一遮擋凸部及一感測區,其中感測區與遮擋凸部相鄰,用以阻隔汙染物沉積在感測區,以提高光感測器感測遮擋單元位置的準確性。 The present invention relates to a thin film deposition machine with a shielding device. The shielding unit is mainly provided with a shielding convex portion and a sensing area, wherein the sensing area is adjacent to the shielding convex portion to prevent pollutants from being deposited on the sensing area. area to improve the accuracy of the light sensor for sensing the position of the blocking unit.

化學氣相沉積(CVD)、物理氣相沉積(PVD)及原子層沉積(ALD)皆是常用的薄膜沉積設備,並普遍被使用在積體電路、發光二極體及顯示器等製程中。 Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), and Atomic Layer Deposition (ALD) are commonly used thin-film deposition equipment, and are commonly used in processes such as integrated circuits, light-emitting diodes, and displays.

沉積設備主要包括一腔體及一晶圓承載盤,其中晶圓承載盤位於腔體內,並用以承載至少一晶圓。以物理氣相沉積為例,腔體內需要設置一靶材,其中靶材面對晶圓承載盤上的晶圓。在進行物理氣相沉積時,可將惰性氣體及/或反應氣體輸送至腔體內,分別對靶材及晶圓承載盤施加偏壓,並透過晶圓承載盤加熱承載的晶圓。 The deposition equipment mainly includes a cavity and a wafer carrier, wherein the wafer carrier is located in the cavity and used to carry at least one wafer. Taking physical vapor deposition as an example, a target needs to be set in the cavity, wherein the target faces the wafer on the wafer carrier. During physical vapor deposition, inert gas and/or reactive gas can be delivered into the chamber to apply bias voltages to the target material and the wafer carrier, respectively, and to heat the supported wafer through the wafer carrier.

腔體內的惰性氣體因為高壓電場的作用,形成離子化的惰性氣體,離子化的惰性氣體會受到靶材上的偏壓吸引而轟擊靶材。從靶材濺出的靶材原子或分子受到晶圓承載盤上的偏壓吸引,並沉積在加熱的晶圓的表面,以在晶圓的表面形成薄膜。 The inert gas in the cavity forms an ionized inert gas due to the action of the high-voltage electric field, and the ionized inert gas will be attracted by the bias voltage on the target and bombard the target. Target atoms or molecules sputtered from the target are attracted by a bias on the wafer carrier and deposit on the surface of the heated wafer to form a thin film on the surface of the wafer.

在經過一段時間的使用後,腔體的內表面會形成沉積薄膜,因此需要週期性的清潔腔體,以避免沉積薄膜在製程中掉落,進而汙染晶圓。此外靶材的表面亦可能形成氧化物或其他汙染物,因此同樣需要週期性的清潔靶材。一般而言,通常會透過預燒(burn-in)製程,以電漿離子撞擊腔體內的靶材,以去除靶材表面的氧化物或其他汙染物。 After a period of use, a deposition film will form on the inner surface of the cavity, so the cavity needs to be cleaned periodically to prevent the deposition film from falling off during the process and contaminating the wafer. In addition, oxides or other contaminants may also form on the surface of the target, so periodic cleaning of the target is also required. Generally speaking, usually through a burn-in process, plasma ions strike the target in the cavity to remove oxides or other contaminants on the surface of the target.

在進行上述清潔腔體及靶材時,需要將腔體內的晶圓承載盤及晶圓取出,或者隔離晶圓承載盤,以避免清潔過程中汙染晶圓承載盤及晶圓。 When cleaning the cavity and the target, it is necessary to take out the wafer carrier and the wafer in the cavity, or isolate the wafer carrier to avoid contamination of the wafer carrier and the wafer during the cleaning process.

一般而言,薄膜沉積機台在經過一段時間的使用後,通常需要進行清潔,以去除腔室內沉積的薄膜及靶材上的氧化物或氮化物。在清潔的過程中產生的微粒會汙染承載盤,因此需要隔離承載盤及汙染物。本新型提出一種具有遮擋裝置的薄膜沉積機台,主要透過驅動裝置帶動兩個遮擋板朝相反方向擺動,使得兩個遮擋板操作在一開啟狀態及一遮擋狀態。 Generally speaking, after a period of use, the thin film deposition machine usually needs to be cleaned to remove the thin film deposited in the chamber and the oxide or nitride on the target. Particles generated during the cleaning process can contaminate the carrier plate, so it is necessary to isolate the carrier plate from the contaminants. The present invention provides a thin film deposition machine with a shielding device, which mainly drives two shielding plates to swing in opposite directions through a driving device, so that the two shielding plates operate in an open state and a shielding state.

兩個遮擋板的上表面分別設置一遮擋凸部及一感測區,其中感測區與遮擋凸部相鄰,並位於遮擋凸部的外側或內部。在清潔反應腔體時,驅動裝置會帶動兩個遮擋單元以擺動的方式相互靠近,使得兩個遮擋單元相靠近並遮擋容置空間內的承載盤,以避免清潔過程中使用的電漿或產生的污染接觸承載盤及/或其承載的基板。在進行沉積製程時,驅動裝置帶動兩個遮擋單元以擺動的方式相互遠離,並對反應腔體內的基板進行薄膜沉積。 The upper surfaces of the two shielding plates are respectively provided with a shielding convex portion and a sensing area, wherein the sensing area is adjacent to the shielding convex portion and located outside or inside the shielding convex portion. When cleaning the reaction chamber, the driving device will drive the two shielding units to approach each other in a swinging manner, so that the two shielding units are close to each other and shield the carrier plate in the accommodating space, so as to avoid the plasma used in the cleaning process or the generation of The contamination contacts the carrier plate and/or the substrate it carries. During the deposition process, the driving device drives the two shielding units away from each other in a swinging manner, and performs thin film deposition on the substrate in the reaction chamber.

本新型的薄膜沉積腔體包括至少兩個光感測器,用以將一感測光束投射在遮擋板的感測區,以確認兩個遮擋板確實操作在開啟狀態。然而在清潔腔體的過程中,往往會在遮擋板的感測區表面沉積薄膜,進而影響光感測器感測遮擋板位置的準確度。為此本新型進一步提出透過遮擋凸部遮擋感測區,以減少感測區在清潔過程中形成薄膜,而有利於光感測器感測遮擋板的操作狀態。 The novel thin film deposition chamber includes at least two light sensors for projecting a sensing beam on the sensing area of the shielding plate to confirm that the two shielding plates are indeed operating in an open state. However, in the process of cleaning the cavity, a thin film is often deposited on the surface of the sensing area of the shielding plate, thereby affecting the accuracy of the light sensor for sensing the position of the shielding plate. To this end, the present invention further proposes to shield the sensing area through the shielding convex portion, so as to reduce the formation of thin films in the sensing area during the cleaning process, which is beneficial for the light sensor to sense the operation state of the shielding plate.

本新型的一目的,在於提供一種具有遮擋裝置的薄膜沉積機台,主要包括一反應腔體、一承載盤及一遮擋裝置。遮擋裝置包括至少一驅動裝置、兩個遮擋單元及兩個距離感測單元,其中驅動裝置連接並驅動兩個遮擋單元分別朝相反方向擺動,使得兩個遮擋單元操作在一開啟狀態或一遮擋狀態。 An object of the present invention is to provide a thin film deposition machine with a shielding device, which mainly includes a reaction chamber, a carrier plate and a shielding device. The shielding device includes at least one driving device, two shielding units and two distance sensing units, wherein the driving device connects and drives the two shielding units to swing in opposite directions respectively, so that the two shielding units operate in an open state or a shielding state .

兩個遮擋單元上皆設置一反射面,當兩個遮擋單元操作在遮擋狀態時,兩個距離感測單元產生的感測光束會分別投射在兩個遮擋單元的反射面上,並量測兩個距離感測單元與兩個遮擋單元之間的距離,以判斷兩個遮擋單元是否操作在遮擋狀態。 A reflective surface is set on the two shielding units. When the two shielding units are operating in the shielding state, the sensing beams generated by the two distance sensing units will be projected on the reflecting surfaces of the two shielding units respectively, and the two distance sensing units will be measured. The distance between the two distance sensing units and the two shielding units is used to determine whether the two shielding units are operating in a shielding state.

為了達到上述的目的,本新型提出一種具有遮擋裝置的薄膜沉積機台,包括:一反應腔體,包括一容置空間;一承載盤,位於容置空間內,並包括一承載面用以承載至少一基板;一遮擋裝置,包括:一第一遮擋單元,位於容置空間內,並包括一第一遮擋凸部及一第一感測區,其中第一遮擋凸部及第一感測區位於第一遮擋單元未朝向承載盤的表面,且第一遮擋凸部與第一感測區相鄰;一第二遮擋單元,位於容置空間內,並包括一第二遮擋凸部及一第二感測區,其中第二遮擋凸部及第二感測區位於第二 遮擋單元未朝向承載盤的表面,且第二遮擋凸部與第二感測區相鄰;至少一驅動裝置,連接第一遮擋單元及第二遮擋單元,並分別驅動第一遮擋單元及第二遮擋單元朝相反的方向擺動,使得第一遮擋單元及第二遮擋單元在一開啟狀態及一遮擋狀態之間切換,其中遮擋狀態的第一遮擋單元及第二遮擋單元相互靠近,並用以遮擋承載盤,而開啟狀態的第一遮擋單元及第二遮擋單元之間則形成一間隔空間;及至少兩個光感測器,設置在反應腔體,並分別用以感測第一遮擋單元的第一感測區及第二遮擋單元的第二感測區,以判斷第一遮擋單元及第二遮擋單元是否確實操作在開啟狀態。 In order to achieve the above-mentioned purpose, the present invention proposes a thin film deposition machine with a shielding device, which includes: a reaction chamber, including an accommodating space; a bearing tray, located in the accommodating space, and including a bearing surface for carrying At least one substrate; a shielding device including: a first shielding unit located in the accommodating space and including a first shielding protrusion and a first sensing area, wherein the first shielding protrusion and the first sensing area The first shielding unit is located on the surface of the first shielding unit not facing the carrier plate, and the first shielding convex portion is adjacent to the first sensing area; a second shielding unit is located in the accommodating space and includes a second shielding convex portion and a first shielding convex portion. Two sensing areas, wherein the second blocking protrusion and the second sensing area are located in the second The shielding unit does not face the surface of the carrier plate, and the second shielding protrusion is adjacent to the second sensing area; at least one driving device is connected to the first shielding unit and the second shielding unit, and drives the first shielding unit and the second shielding unit respectively. The shielding unit swings in the opposite direction, so that the first shielding unit and the second shielding unit are switched between an open state and a shielding state, wherein the first shielding unit and the second shielding unit in the shielding state are close to each other and used to shield the bearing plate, and a space is formed between the first shielding unit and the second shielding unit in the open state; and at least two light sensors are arranged in the reaction chamber and are respectively used for sensing the first shielding unit of the first shielding unit. A sensing area and a second sensing area of the second shielding unit to determine whether the first shielding unit and the second shielding unit are indeed operating in an open state.

本新型提供一遮擋裝置,包括:一第一遮擋板,包括一第一遮擋凸部及一第一感測區,其中第一遮擋凸部及第一感測區設置在第一遮擋板的一第一上表面,且第一遮擋凸部與第一感測區相鄰;一第一連接臂,用以承載第一遮擋板;一第二遮擋板,包括一第二遮擋凸部及一第二感測區,其中第二遮擋凸部及第二感測區設置在第二遮擋板的一第二上表面,且第二遮擋凸部與第二感測區相鄰;一第二連接臂,用以承載第二遮擋板;及至少一驅動裝置,經由第一連接臂及第二連接臂分別驅動第一遮擋板及第二遮擋板朝相反的方向擺動,使得第一遮擋板及第二遮擋板在一開啟狀態及一遮擋狀態之間切換,其中遮擋狀態的第一遮擋板及第二遮擋板相互靠近,而開啟狀態的第一遮擋板及第二遮擋板之間則形成一間隔空間。 The present invention provides a shielding device, comprising: a first shielding plate, including a first shielding convex part and a first sensing area, wherein the first shielding convex part and the first sensing area are arranged on a part of the first shielding plate a first upper surface, and the first shielding convex portion is adjacent to the first sensing area; a first connecting arm is used to carry the first shielding plate; a second shielding plate includes a second shielding convex portion and a first shielding plate Two sensing areas, wherein the second blocking protrusion and the second sensing area are disposed on a second upper surface of the second blocking plate, and the second blocking protrusion is adjacent to the second sensing area; a second connecting arm , used to carry the second shielding plate; and at least one driving device, which drives the first shielding plate and the second shielding plate to swing in opposite directions through the first connecting arm and the second connecting arm respectively, so that the first shielding plate and the second shielding plate are respectively driven to swing in opposite directions. The shielding plate is switched between an open state and a shielding state, wherein the first shielding plate and the second shielding plate in the shielding state are close to each other, and a space is formed between the first shielding plate and the second shielding plate in the open state .

所述的具有遮擋裝置的薄膜沉積機台,其中第一遮擋單元包括一第一連接臂及一第一遮擋板,驅動裝置經由第一連接臂連接第一遮擋板,第一遮擋凸部及第一感測區位於第一遮擋板上,其中第二遮擋單元包括一 第二連接臂及一第二遮擋板,驅動裝置經由第二連接臂連接第二遮擋板,第二遮擋凸部及第二感測區位於第二遮擋板上。 The film deposition machine with a shielding device, wherein the first shielding unit includes a first connecting arm and a first shielding plate, the driving device is connected to the first shielding plate, the first shielding protrusion and the first shielding plate through the first connecting arm. A sensing area is located on the first shielding plate, wherein the second shielding unit includes a The second connecting arm and a second shielding plate, the driving device is connected to the second shielding plate through the second connecting arm, and the second shielding convex portion and the second sensing area are located on the second shielding plate.

所述的具有遮擋裝置的薄膜沉積機台,包括一靶材,面對承載盤的承載面,其中第一遮擋凸部及第一感測區位於朝向靶材的第一遮擋板的一第一上表面,而第二遮擋凸部及第二感測區則位於朝向靶材的第二遮擋板的一第二上表面。 The thin film deposition machine with a shielding device includes a target material facing the bearing surface of the bearing plate, wherein the first shielding protrusion and the first sensing area are located on a first shielding plate facing the target material. the upper surface, and the second shielding protrusion and the second sensing area are located on a second upper surface of the second shielding plate facing the target.

所述的具有遮擋裝置的薄膜沉積機台或遮擋裝置,其中遮擋狀態的第一遮擋凸部及第二遮擋凸部形成一環狀遮擋凸部,而第一感測區及第二感測區則形成一環狀感測區,環狀感測區位於環狀遮擋凸部的外側。 The thin film deposition machine or the shielding device with the shielding device, wherein the first shielding convex portion and the second shielding convex portion in the shielding state form a ring-shaped shielding convex portion, and the first sensing area and the second sensing area are Then, a ring-shaped sensing area is formed, and the ring-shaped sensing area is located outside the ring-shaped shielding convex portion.

所述的具有遮擋裝置的薄膜沉積機台或遮擋裝置,其中第一遮擋凸部及第二遮擋凸部為封閉形狀的管狀凸起。 In the thin film deposition machine or the shielding device with a shielding device, the first shielding convex part and the second shielding convex part are closed-shaped tubular protrusions.

所述的具有遮擋裝置的薄膜沉積機台,包括:一第一反射面,設置在第一連接臂上;一第二反射面,設置在第二連接臂上;一第一距離感測單元,設置在反應腔體上,並用以將一第一感測光束投射至操作在遮擋狀態的第一連接臂的第一反射面;及一第二距離感測單元,設置在反應腔體上,並用以將一第二感測光束投射至操作在遮擋狀態的第二連接臂的第二反射面。 The film deposition machine with the shielding device includes: a first reflective surface arranged on the first connecting arm; a second reflective surface arranged on the second connecting arm; a first distance sensing unit, is arranged on the reaction cavity, and is used to project a first sensing beam to the first reflection surface of the first connecting arm operating in a blocking state; and a second distance sensing unit is arranged on the reaction cavity and used so as to project a second sensing beam to the second reflecting surface of the second connecting arm operating in a blocking state.

所述的具有遮擋裝置的薄膜沉積機台,其中反應腔體包括兩個感測腔室,而兩個光感測器分別設置在兩個感測腔室,並分別用以感測進入感測腔室的第一遮擋板的第一感測區及第二遮擋板的第二感測區。 In the thin film deposition machine with a shielding device, the reaction chamber includes two sensing chambers, and the two light sensors are respectively arranged in the two sensing chambers, and are respectively used for sensing incoming sensing The first sensing area of the first shielding plate and the second sensing area of the second shielding plate of the chamber.

10:具有遮擋裝置的薄膜沉積機台 10: Thin film deposition machine with shielding device

100:遮擋裝置 100: Blocking device

11:反應腔體 11: Reaction chamber

111:擋件 111: Stopper

112:開口 112: Opening

113:感測腔室 113: Sensing Chamber

115:透光窗 115: Translucent window

12:容置空間 12: Accommodating space

13:環狀遮擋凸部 13: Ring-shaped shielding convex part

130:環狀感測區 130: Ring-shaped sensing area

131:第一遮擋凸部 131: The first blocking protrusion

132:第一感測區 132: The first sensing area

133:第二遮擋凸部 133: Second shielding protrusion

134:第二感測區 134: Second sensing area

14:第一遮擋單元 14: The first blocking unit

141:第一連接臂 141: The first connecting arm

143:第一遮擋板 143: The first shield

1431:第一上表面 1431: First upper surface

145:第一反射面 145: The first reflecting surface

15:第二遮擋單元 15: The second blocking unit

151:第二連接臂 151: Second connecting arm

153:第二遮擋板 153: Second shield

1531:第二上表面 1531: Second upper surface

155:第二反射面 155: Second reflective surface

161:靶材 161: Target

163:基板 163: Substrate

165:承載盤 165: Carrier plate

1651:承載面 1651: Bearing surface

17:驅動裝置 17: Drive unit

171:驅動馬達 171: Drive Motor

173:軸封裝置 173: Shaft seal device

18:間隔空間 18: Interval space

191:第一距離感測單元 191: The first distance sensing unit

193:第二距離感測單元 193: Second distance sensing unit

195:光感測器 195: Light Sensor

L1:第一感測光束 L1: The first sensing beam

L2:第二感測光束 L2: Second sensing beam

[圖1]為本新型具有遮擋裝置的薄膜沉積機台操作在遮擋狀態一實施例的剖面示意圖。 1 is a schematic cross-sectional view of an embodiment of the novel thin film deposition machine with a shielding device operating in a shielding state.

[圖2]為本新型遮擋裝置操作在開啟狀態一實施例的立體示意圖。 2 is a perspective view of an embodiment of the novel shielding device operating in an open state.

[圖3]為本新型遮擋裝置操作在遮擋狀態一實施例的立體示意圖。 FIG. 3 is a three-dimensional schematic diagram of an embodiment of the novel shielding device operating in a shielding state.

[圖4]為本新型具有遮擋裝置的薄膜沉積機台的部分構造一實施例的立體示意圖。 FIG. 4 is a perspective view of an embodiment of a partial structure of a novel thin film deposition machine with a shielding device.

[圖5]為本新型具有遮擋裝置的薄膜沉積機台操作在開啟狀態一實施例的上方透視圖。 5 is a top perspective view of an embodiment of the novel thin film deposition machine with a shielding device operating in an open state.

[圖6]為本新型具有遮擋裝置的薄膜沉積機台操作在遮擋狀態一實施例的上方俯視圖。 6 is a top plan view of an embodiment of the novel thin film deposition machine with a shielding device operating in a shielded state.

[圖7]為本新型具有遮擋裝置的薄膜沉積機台操作在遮擋狀態又一實施例的剖面示意圖。 7 is a schematic cross-sectional view of yet another embodiment of the novel thin film deposition machine with a shielding device operating in a shielded state.

[圖8]為本新型遮擋裝置操作在開啟狀態又一實施例的立體示意圖。 FIG. 8 is a perspective view of another embodiment of the novel shielding device operating in an open state.

[圖9]為本新型具有遮擋裝置的薄膜沉積機台操作在開啟狀態又一實施例的上方透視圖。 [ Fig. 9 ] is a top perspective view of yet another embodiment of the novel thin film deposition machine with a shielding device operating in an open state.

請參閱圖1,為本新型具有遮擋裝置的薄膜沉積機台操作在遮擋狀態一實施例的側面剖面示意圖。如圖所示,具有遮擋裝置的薄膜沉積機台10主要包括一反應腔體11、一承載盤165及一遮擋裝置100,其中反應腔體11包括一容置空間12用以容置承載盤165及部分的遮擋裝置100。 Please refer to FIG. 1 , which is a schematic side cross-sectional view of an embodiment of the novel thin film deposition machine with a shielding device operating in a shielding state. As shown in the figure, the thin film deposition machine 10 with a shielding device mainly includes a reaction chamber 11 , a carrier plate 165 and a shielding device 100 , wherein the reaction chamber 11 includes an accommodating space 12 for accommodating the supporting plate 165 and part of the shielding device 100 .

如圖1所示,承載盤165位於反應腔體11的容置空間12內,並包括一承載面1651用以承載至少一基板163。具有遮擋裝置的薄膜沉積機台10為物理氣相沉積腔體時,反應腔體11內設置一靶材161,其中靶材161面對基板163及承載盤165的承載面1651。例如靶材161可設置在反應腔體11的容置空間12的上表面。 As shown in FIG. 1 , the carrying tray 165 is located in the accommodating space 12 of the reaction chamber 11 , and includes a carrying surface 1651 for carrying at least one substrate 163 . When the thin film deposition machine 10 with the shielding device is a physical vapor deposition chamber, a target 161 is disposed in the reaction chamber 11 , wherein the target 161 faces the substrate 163 and the bearing surface 1651 of the bearing tray 165 . For example, the target 161 may be disposed on the upper surface of the accommodating space 12 of the reaction chamber 11 .

請配合參閱圖2與圖3所示,遮擋裝置100包括一第一遮擋單元14、一第二遮擋單元15及一驅動裝置17,其中第一遮擋單元14及第二遮擋單元15位於容置空間12內。驅動裝置17連接第一遮擋單元14及第二遮擋單元15,並分別驅動第一遮擋單元14及第二遮擋單元15朝相反方向擺動。 Please refer to FIG. 2 and FIG. 3 , the shielding device 100 includes a first shielding unit 14 , a second shielding unit 15 and a driving device 17 , wherein the first shielding unit 14 and the second shielding unit 15 are located in the accommodating space within 12. The driving device 17 is connected to the first shielding unit 14 and the second shielding unit 15 , and drives the first shielding unit 14 and the second shielding unit 15 to swing in opposite directions respectively.

如圖2與圖3所示,在本新型一實施例中,第一遮擋單元14包括一第一連接臂141及一第一遮擋板143,其中第一連接臂141用以承載第一遮擋板143。第二遮擋單元15則包括一第二連接臂151及一第二遮擋板153,其中第二連接臂151用以承載第二遮擋板153。驅動裝置17分別透過第一連接臂141及一第二連接臂151連接並帶動第一遮擋板143及第二遮擋板153朝相反方向擺動或轉動。 As shown in FIGS. 2 and 3 , in an embodiment of the present invention, the first shielding unit 14 includes a first connecting arm 141 and a first shielding plate 143 , wherein the first connecting arm 141 is used to support the first shielding plate 143. The second shielding unit 15 includes a second connecting arm 151 and a second shielding plate 153 , wherein the second connecting arm 151 is used for supporting the second shielding plate 153 . The driving device 17 is connected through the first connecting arm 141 and a second connecting arm 151 respectively and drives the first shielding plate 143 and the second shielding plate 153 to swing or rotate in opposite directions.

第一遮擋板143及第二遮擋板153可為板體,並於第一遮擋板143未朝向承載盤165的第一上表面1431設置一第一遮擋凸部131及一第一感測區132,其中第一遮擋凸部131與第一感測區132相鄰,例如第一上表面1431為第一遮擋板143朝向靶材161的表面。 The first shielding plate 143 and the second shielding plate 153 can be plate bodies, and a first shielding protrusion 131 and a first sensing area 132 are disposed on the first upper surface 1431 of the first shielding plate 143 not facing the carrier plate 165 . , wherein the first shielding convex portion 131 is adjacent to the first sensing region 132 , for example, the first upper surface 1431 is the surface of the first shielding plate 143 facing the target 161 .

如圖1、圖2與圖3所示,在本新型一實施例中,第一感測區132位於第一遮擋凸部131的外側或徑向外側,例如第一遮擋板143為半圓形板體,而第一遮擋凸部131則為近似C字形或半圓環狀的凸起。於第二遮擋板 153未朝向承載盤165的第二上表面1531設置第二遮擋凸部133及第二感測區134,例如第二上表面1531朝向靶材161,其中第二遮擋板153的構造與第一遮擋板143相近。 As shown in FIG. 1 , FIG. 2 and FIG. 3 , in an embodiment of the present invention, the first sensing area 132 is located on the outer side or radially outer side of the first shielding protrusion 131 , for example, the first shielding plate 143 is a semicircle The first shielding protrusion 131 is a C-shaped or semi-circular protrusion. on the second shield The second shielding protrusion 133 and the second sensing area 134 are not disposed on the second upper surface 1531 of the carrier plate 165 , for example, the second upper surface 1531 faces the target 161 , wherein the structure of the second shielding plate 153 is the same as that of the first shielding Plate 143 is similar.

本新型具有遮擋裝置的薄膜沉積機台10及/或遮擋裝置100可操作在開啟狀態及遮擋狀態。如圖2及圖5所示,驅動裝置17驅動第一遮擋單元14及第二遮擋單元15相互遠離,並操作在開啟狀態。第一遮擋單元14及第二遮擋單元15之間會形成一間隔空間18,使得靶材161與承載盤165及基板163之間不存在第一遮擋單元14及第二遮擋單元15。而後可驅動承載盤165及基板163朝靶材161的方向靠近,並透過容置空間12內的氣體撞擊靶材161,在基板163的表面沉積薄膜。 The novel thin film deposition machine 10 with a shielding device and/or the shielding device 100 of the present invention can be operated in an open state and a shielding state. As shown in FIG. 2 and FIG. 5 , the driving device 17 drives the first shielding unit 14 and the second shielding unit 15 away from each other, and operates in an open state. A space 18 is formed between the first shielding unit 14 and the second shielding unit 15 , so that the first shielding unit 14 and the second shielding unit 15 do not exist between the target 161 , the carrier plate 165 and the substrate 163 . Then, the carrier plate 165 and the substrate 163 can be driven to approach the target 161 , and the gas in the accommodating space 12 strikes the target 161 to deposit a thin film on the surface of the substrate 163 .

請配合參閱圖1、圖5及圖6所示,反應腔體11包括兩個感測腔室113,其中兩個感測腔室113凸出反應腔體11。兩個感測腔室113的高度小於反應腔體11,並於兩個感測腔室113上可分別設置一光感測器195,例如光感測器195可以是距離光感測器、反射式光感測器或對照式光感測器,並包括至少一光發射單元及至少一光接收單元。 Please refer to FIG. 1 , FIG. 5 and FIG. 6 , the reaction chamber 11 includes two sensing chambers 113 , wherein the two sensing chambers 113 protrude from the reaction chamber 11 . The height of the two sensing chambers 113 is smaller than that of the reaction chamber 11, and a photo sensor 195 can be disposed on the two sensing chambers 113, for example, the photo sensor 195 can be a distance photo sensor, a reflection A type light sensor or a contrast type light sensor, and includes at least one light emitting unit and at least one light receiving unit.

如圖1、圖2與圖5所示,第一及第二遮擋單元14/15操作在開啟狀態時,部分的第一及第二遮擋板143/153會分別進入兩個感測腔室113,而兩個光感測器195會分別用以感測第一及第二感測區132/134,並判斷第一及第二遮擋單元14/15是否確實操作在開啟狀態。例如兩個光感測器195的光發射單元分別將感測光束投射在第一及第二感測區132/134,並透過光感測器195的光接收單元接收第一及第二感測區132/134反射及/或散射的感測光束。 As shown in FIG. 1 , FIG. 2 and FIG. 5 , when the first and second shielding units 14 / 15 are operated in the open state, part of the first and second shielding plates 143 / 153 will enter the two sensing chambers 113 respectively. , and the two light sensors 195 are respectively used to sense the first and second sensing regions 132/134, and determine whether the first and second shielding units 14/15 are indeed operating in an open state. For example, the light emitting units of the two light sensors 195 project the sensing beams on the first and second sensing regions 132/134, respectively, and receive the first and second sensing beams through the light receiving units of the light sensors 195. Regions 132/134 reflect and/or scatter the sense beam.

如圖1、圖3與圖6所示,在清潔反應腔體11及/或靶材161的過程中,汙染物或微粒會沉積在第一遮擋板143及第二遮擋板153上,造成光感測器195無法準確的感測第一遮擋板143及第二遮擋板153。為此本新型進一步提出在第一及第二遮擋板143/153朝向靶材161的表面設置第一及第二遮擋凸部131/133,並透過第一及第二遮擋凸部131/133在第一及第二遮擋板143/153上定義出第一及第二感測區132/134。第一及第二遮擋凸部131/133分別與第一及第二感測區132/134相鄰,並且第一及第二感測區132/134分別位於第一及第二遮擋凸部131/133的外側。第一及第二遮擋凸部131/133用以遮擋第一及第二感測區132/134,並避免在第一及第二感測區132/134上沉積薄膜。 As shown in FIG. 1 , FIG. 3 and FIG. 6 , in the process of cleaning the reaction chamber 11 and/or the target material 161 , contaminants or particles may be deposited on the first shielding plate 143 and the second shielding plate 153 , causing light The sensor 195 cannot accurately sense the first shielding plate 143 and the second shielding plate 153 . To this end, the present invention further proposes to provide first and second shielding protrusions 131/133 on the surfaces of the first and second shielding plates 143/153 facing the target 161, and through the first and second shielding protrusions 131/133 First and second sensing regions 132/134 are defined on the first and second shielding plates 143/153. The first and second shielding protrusions 131/133 are adjacent to the first and second sensing regions 132/134, respectively, and the first and second sensing regions 132/134 are located at the first and second shielding protrusions 131, respectively /133 outside. The first and second shielding protrusions 131/133 are used for shielding the first and second sensing regions 132/134, and preventing film deposition on the first and second sensing regions 132/134.

如圖1、圖3、圖4、圖6及圖7所示,驅動裝置17可驅動第一遮擋單元14及第二遮擋單元15相互靠近,並操作在遮擋狀態,其中第一遮擋板143及第二遮擋板153會相互靠近並形成一圓板狀的遮擋件,以遮擋承載盤165及/或基板163。 As shown in FIG. 1 , FIG. 3 , FIG. 4 , FIG. 6 and FIG. 7 , the driving device 17 can drive the first shielding unit 14 and the second shielding unit 15 to approach each other and operate in a shielding state, wherein the first shielding plate 143 and the second shielding unit 15 are in a shielding state. The second shielding plates 153 are close to each other and form a circular plate-shaped shielding member to shield the carrier plate 165 and/or the substrate 163 .

如圖2、圖3、圖5與圖6所示,第一遮擋凸部131及第二遮擋凸部133可以是C字形或半圓環狀的凸起,當第一及第二遮擋板143/153操作在遮擋狀態時,第一及第二遮擋凸部131/133會形成一環狀遮擋凸部13,其中環狀遮擋凸部13的外側會形成一環狀感測區130。透過在第一遮擋板143及第二遮擋板153朝向靶材161的表面形成環狀遮擋凸部13,不僅有利於遮擋第一及第二感測區132/134,亦可進一步提高第一遮擋板143及第二遮擋板153的遮擋效果。 As shown in FIG. 2 , FIG. 3 , FIG. 5 and FIG. 6 , the first shielding convex portion 131 and the second shielding convex portion 133 may be C-shaped or semi-circular protrusions. When the first and second shielding plates 143 / When the 153 operates in the blocking state, the first and second blocking protrusions 131 / 133 form an annular blocking protrusion 13 , wherein an annular sensing area 130 is formed on the outer side of the annular blocking protrusion 13 . By forming the annular shielding protrusions 13 on the surfaces of the first shielding plate 143 and the second shielding plate 153 facing the target 161 , not only is it beneficial to shield the first and second sensing regions 132 / 134 , but also the first shielding can be further improved. The shielding effect of the plate 143 and the second shielding plate 153 .

本新型實施例所述的第一遮擋單元14及第二遮擋單元15操作在遮擋狀態,可定義為第一遮擋板143及第二遮擋板153相互靠近,直到兩者之間的間距小於一門檻值,例如小於1mm,以防止第一遮擋板143及第二遮擋板153在接觸過程中產生微粒。 The first shielding unit 14 and the second shielding unit 15 according to the new embodiment operate in the shielding state, which can be defined as the first shielding plate 143 and the second shielding plate 153 approaching each other until the distance between them is smaller than a threshold The value is, for example, less than 1 mm, so as to prevent the first shielding plate 143 and the second shielding plate 153 from generating particles during the contact process.

操作在遮擋狀態的第一遮擋單元14及第二遮擋單元15位在靶材161與承載盤165之間,並在容置空間12內區隔一清潔空間,其中清潔空間與反應空間的區域部分重疊或相近。而後可在清潔空間內進行預燒(burn-in)製程,以清潔靶材161及清潔空間內的反應腔體11及/或擋件111,並去除靶材161表面的氧化物、氮化物或其他汙染物,及反應腔體11及/或擋件111表面的沉積薄膜。 The first shielding unit 14 and the second shielding unit 15 operating in the shielding state are located between the target material 161 and the carrier plate 165, and separate a cleaning space in the accommodating space 12, wherein the cleaning space and the reaction space are part of the area overlapping or close. Then, a burn-in process can be performed in the clean space to clean the target 161 and the reaction chamber 11 and/or the stopper 111 in the clean space, and to remove oxides, nitrides or other oxides on the surface of the target 161 . Other contaminants, and deposited films on the surfaces of the reaction chamber 11 and/or the blocking member 111 .

如圖7及圖8所示,第一及第二遮擋凸部131/133亦可以是多邊形管體或圓柱狀管體,例如為第一及第二遮擋凸部131/133的剖面為封閉形狀的管狀凸起,並於第一及第二遮擋凸部131/133的內部形成一第一及第二感測區132/134。 As shown in FIG. 7 and FIG. 8 , the first and second shielding protrusions 131/133 may also be polygonal or cylindrical pipes, for example, the cross-sections of the first and second shielding protrusions 131/133 are closed shapes A first and a second sensing area 132/134 are formed inside the first and second shielding protrusions 131/133.

如圖9所示,第一及第二遮擋凸部131/133的剖面為非封閉形狀的凸起,例如為C字型或U字型的凸起,其中第一及第二遮擋凸部131/133可連接第一及第二遮擋板143/153的邊緣。 As shown in FIG. 9 , the cross-sections of the first and second shielding protrusions 131 / 133 are non-closed-shaped protrusions, such as C-shaped or U-shaped protrusions, wherein the first and second shielding protrusions 131 /133 can connect the edges of the first and second shielding plates 143/153.

在本新型一實施例中,如圖1所示,反應腔體11的容置空間12可設置一擋件111,其中擋件111的一端連接反應腔體11,而擋件111的另一端則形成一開口112。承載盤165朝靶材161靠近時,反應腔體11、承載盤165及擋件111會在容置空間12內區隔出一反應空間,並在反應空間內的基板163表面沉積薄膜。 In an embodiment of the present invention, as shown in FIG. 1 , a blocking member 111 may be disposed in the accommodating space 12 of the reaction chamber 11 , wherein one end of the blocking member 111 is connected to the reaction chamber 11 , and the other end of the blocking member 111 is connected to the reaction chamber 11 . An opening 112 is formed. When the carrier plate 165 approaches the target 161 , the reaction chamber 11 , the carrier plate 165 and the blocking member 111 will define a reaction space in the accommodating space 12 , and deposit a film on the surface of the substrate 163 in the reaction space.

當第一遮擋板143及第二遮擋板153操作在遮擋狀態時,環狀遮擋凸部13會位於擋件111下方或外側,使得環狀遮擋凸部13內側的面積大於或等於的開口112面積,以提高遮擋的效果。 When the first shielding plate 143 and the second shielding plate 153 operate in the shielding state, the annular shielding convex portion 13 will be located below or outside the blocking member 111 , so that the inner area of the annular shielding convex portion 13 is greater than or equal to the area of the opening 112 , to improve the occlusion effect.

在本新型一實施例中,如圖2及圖3所示,驅動裝置17包括至少一驅動馬達171及一軸封裝置173,其中驅動馬達171透過軸封裝置173連接並驅動第一遮擋單元14及第二遮擋單元15朝相反方向擺動,軸封裝置173可以是一般常見的軸封或磁流體軸封。 In an embodiment of the present invention, as shown in FIG. 2 and FIG. 3 , the driving device 17 includes at least one driving motor 171 and a shaft sealing device 173 , wherein the driving motor 171 is connected through the shaft sealing device 173 and drives the first shielding unit 14 and the The second shielding unit 15 swings in the opposite direction, and the shaft seal device 173 may be a common shaft seal or a magnetic fluid shaft seal.

如圖1、圖4及圖6所示,本新型進一步在第一連接臂141及第二連接臂151上分別設置一第一反射面145及一第二反射面155,並於反應腔體11上設置一第一距離感測單元191及一第二距離感測單元193,其中第一距離感測單元191及第二距離感測單元193可以是光學測距儀。 As shown in FIG. 1 , FIG. 4 and FIG. 6 , in the present invention, a first reflecting surface 145 and a second reflecting surface 155 are further disposed on the first connecting arm 141 and the second connecting arm 151 , respectively, and the reaction chamber 11 A first distance sensing unit 191 and a second distance sensing unit 193 are disposed thereon, wherein the first distance sensing unit 191 and the second distance sensing unit 193 may be optical distance meters.

如圖4所示,第一距離感測單元191與第一遮擋單元14設置在反應腔體11的同一側,而第二距離感測單元193與第二遮擋單元15則設置在反應腔體11的同一側。第一及第二距離感測單元191/193分別將一第一及一第二感測光束L1/L2投射至第一及第二遮擋單元14/15的第一及第二反射面145/155上,其中第一及第二感測光束L1/L2分別垂直第一及第二反射面145/155垂直。 As shown in FIG. 4 , the first distance sensing unit 191 and the first shielding unit 14 are arranged on the same side of the reaction chamber 11 , and the second distance sensing unit 193 and the second shielding unit 15 are arranged at the reaction chamber 11 . on the same side. The first and second distance sensing units 191/193 respectively project a first and a second sensing light beam L1/L2 to the first and second reflecting surfaces 145/155 of the first and second shielding units 14/15 , wherein the first and second sensing light beams L1/L2 are perpendicular to the first and second reflecting surfaces 145/155, respectively.

如圖4所示,第一距離感測單元191可由反射的第一感測光束L1量測出第一遮擋單元14與第一距離感測單元191之間的距離,而第二距離感測單元193可由反射的第二感測光束L2量測出第二遮擋單元15與第二距離感測單元193之間的距離,並由量測的距離判斷第一及第二遮擋單元14/15是否確實操作在遮擋狀態。 As shown in FIG. 4 , the first distance sensing unit 191 can measure the distance between the first shielding unit 14 and the first distance sensing unit 191 from the reflected first sensing light beam L1 , and the second distance sensing unit 193 The distance between the second shielding unit 15 and the second distance sensing unit 193 can be measured by the reflected second sensing light beam L2, and the measured distance can be used to determine whether the first and second shielding units 14/15 are correct The operation is in the occluded state.

在本新型一實施例中,如圖5及圖6所示,反應腔體11上可分別設置一透光窗115,其中第一距離感測單元191及第二距離感測單元193分別面對兩個透光窗115。 In an embodiment of the present invention, as shown in FIG. 5 and FIG. 6 , a light-transmitting window 115 may be respectively disposed on the reaction chamber 11 , wherein the first distance sensing unit 191 and the second distance sensing unit 193 face respectively Two light-transmitting windows 115 .

以上所述者,僅為本新型之一較佳實施例而已,並非用來限定本新型實施之範圍,即凡依本新型申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本新型之申請專利範圍內。 The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Modifications should be included in the scope of the patent application of the present invention.

100:遮擋裝置 100: Blocking device

131:第一遮擋凸部 131: The first blocking protrusion

132:第一感測區 132: The first sensing area

133:第二遮擋凸部 133: Second shielding protrusion

134:第二感測區 134: Second sensing area

14:第一遮擋單元 14: The first blocking unit

141:第一連接臂 141: The first connecting arm

143:第一遮擋板 143: The first shield

1431:第一上表面 1431: First upper surface

15:第二遮擋單元 15: The second blocking unit

151:第二連接臂 151: Second connecting arm

153:第二遮擋板 153: Second shield

1531:第二上表面 1531: Second upper surface

17:驅動裝置 17: Drive unit

171:驅動馬達 171: Drive Motor

173:軸封裝置 173: Shaft seal device

18:間隔空間 18: Interval space

Claims (10)

一種具有遮擋裝置的薄膜沉積機台,包括:一反應腔體,包括一容置空間;一擋件,位於該容置空間內,該擋件的一端連接該反應腔體,而該擋件的另一端則形成一開口;一承載盤,位於該容置空間內,並包括一承載面用以承載至少一基板;一第一遮擋單元,位於該容置空間內,並包括一第一遮擋凸部及一第一感測區,其中該第一遮擋凸部及該第一感測區位於該第一遮擋單元未朝向該承載盤的表面,且該第一遮擋凸部與該第一感測區相鄰;一第二遮擋單元,位於該容置空間內,並包括一第二遮擋凸部及一第二感測區,其中該第二遮擋凸部及該第二感測區位於該第二遮擋單元未朝向該承載盤的表面,且該第二遮擋凸部與該第二感測區相鄰;至少一驅動裝置,連接該第一遮擋單元及該第二遮擋單元,並分別驅動該第一遮擋單元及該第二遮擋單元朝相反的方向擺動,使得該第一遮擋單元及該第二遮擋單元在一開啟狀態及一遮擋狀態之間切換,其中該遮擋狀態的該第一遮擋單元及該第二遮擋單元相互靠近,並用以遮擋該承載盤,而該開啟狀態的該第一遮擋單元及該第二遮擋單元之間則形成一間隔空間;及至少兩個光感測器,設置在該反應腔體,分別用以感測該第一遮擋單元的該第一感測區及該第二遮擋單元的該第二感測區,以判斷該第一遮擋單元及該第二遮擋單元是否確實操作在該開啟狀態。 A thin film deposition machine with a shielding device, comprising: a reaction cavity, including an accommodating space; a blocking piece, located in the accommodating space, one end of the blocking piece is connected to the reaction cavity, and the blocking piece is located in the accommodating space. An opening is formed at the other end; a carrying plate is located in the accommodating space and includes a carrying surface for carrying at least one substrate; a first shielding unit is located in the accommodating space and includes a first shielding protrusion part and a first sensing area, wherein the first shielding convex part and the first sensing area are located on the surface of the first shielding unit not facing the carrier plate, and the first shielding convex part and the first sensing area The areas are adjacent; a second shielding unit is located in the accommodating space and includes a second shielding protrusion and a second sensing area, wherein the second shielding protrusion and the second sensing area are located in the first shielding convex portion and the second sensing area. Two shielding units do not face the surface of the carrier plate, and the second shielding protrusion is adjacent to the second sensing area; at least one driving device is connected to the first shielding unit and the second shielding unit, and drives the The first shielding unit and the second shielding unit swing in opposite directions, so that the first shielding unit and the second shielding unit are switched between an open state and a shielding state, wherein the first shielding unit in the shielding state and the second shielding unit are close to each other and are used to shield the carrier plate, and a space is formed between the first shielding unit and the second shielding unit in the open state; and at least two light sensors are provided. In the reaction chamber, the first sensing area of the first shielding unit and the second sensing area of the second shielding unit are respectively used to sense the first shielding unit and the second shielding unit Whether the operation is indeed in the open state. 如請求項1所述的具有遮擋裝置的薄膜沉積機台,其中該第一遮擋單元包括一第一連接臂及一第一遮擋板,該驅動裝置經由該第一連接臂連接該第一遮擋板,該第一遮擋凸部及該第一感測區位於該第一遮擋板上,其中該 第二遮擋單元包括一第二連接臂及一第二遮擋板,該驅動裝置經由該第二連接臂連接該第二遮擋板,該第二遮擋凸部及該第二感測區位於該第二遮擋板上。 The thin film deposition machine with a shielding device as claimed in claim 1, wherein the first shielding unit comprises a first connecting arm and a first shielding plate, and the driving device is connected to the first shielding plate through the first connecting arm , the first shielding protrusion and the first sensing area are located on the first shielding plate, wherein the The second shielding unit includes a second connecting arm and a second shielding plate. The driving device is connected to the second shielding plate through the second connecting arm. The second shielding protrusion and the second sensing area are located in the second shielding plate. cover plate. 如請求項2所述的具有遮擋裝置的薄膜沉積機台,包括一靶材,面對該承載盤的該承載面,其中該第一遮擋凸部及該第一感測區位於朝向該靶材的該第一遮擋板的一第一上表面,而該第二遮擋凸部及該第二感測區則位於朝向該靶材的該第二遮擋板的一第二上表面。 The thin film deposition machine with a shielding device as claimed in claim 2, comprising a target material facing the bearing surface of the bearing plate, wherein the first shielding protrusion and the first sensing area are located toward the target material a first upper surface of the first shielding plate, and the second shielding protrusion and the second sensing area are located on a second upper surface of the second shielding plate facing the target. 如請求項3所述的具有遮擋裝置的薄膜沉積機台,其中該遮擋狀態的該第一遮擋凸部及該第二遮擋凸部形成一環狀遮擋凸部,而該第一感測區及該第二感測區則形成一環狀感測區,該環狀感測區位於該環狀遮擋凸部的外側。 The thin film deposition machine with a shielding device as claimed in claim 3, wherein the first shielding convex portion and the second shielding convex portion in the shielding state form a ring-shaped shielding convex portion, and the first sensing area and The second sensing area forms an annular sensing area, and the annular sensing area is located outside the annular shielding protrusion. 如請求項3所述的具有遮擋裝置的薄膜沉積機台,其中該第一遮擋凸部及該第二遮擋凸部為封閉形狀的管狀凸起。 The thin film deposition machine with a shielding device according to claim 3, wherein the first shielding protrusion and the second shielding protrusion are closed-shaped tubular protrusions. 如請求項2所述的具有遮擋裝置的薄膜沉積機台,包括:一第一反射面,設置在該第一連接臂上;一第二反射面,設置在該第二連接臂上;一第一距離感測單元,設置在該反應腔體上,並用以將一第一感測光束投射至操作在該遮擋狀態的該第一連接臂的該第一反射面;及一第二距離感測單元,設置在該反應腔體上,並用以將一第二感測光束投射至操作在該遮擋狀態的該第二連接臂的該第二反射面。 The thin film deposition machine with a shielding device according to claim 2, comprising: a first reflective surface arranged on the first connecting arm; a second reflective surface arranged on the second connecting arm; a first reflective surface a distance sensing unit disposed on the reaction cavity and used for projecting a first sensing beam to the first reflection surface of the first connecting arm operating in the shielding state; and a second distance sensing The unit is arranged on the reaction cavity and is used for projecting a second sensing beam to the second reflection surface of the second connecting arm operating in the shielding state. 如請求項2所述的具有遮擋裝置的薄膜沉積機台,其中該反應腔體包括兩個感測腔室,而該兩個光感測器分別設置在該兩個感測腔室,並分別 用以感測進入各該感測腔室的該第一遮擋板的該第一感測區及該第二遮擋板的該第二感測區。 The thin film deposition machine with a shielding device as claimed in claim 2, wherein the reaction chamber includes two sensing chambers, and the two light sensors are respectively disposed in the two sensing chambers, and are respectively for sensing the first sensing area of the first shielding plate and the second sensing area of the second shielding plate entering each of the sensing chambers. 一種遮擋裝置,包括:一第一遮擋板,包括一第一遮擋凸部及一第一感測區,其中該第一遮擋凸部及該第一感測區設置在該第一遮擋板的一第一上表面,且該第一遮擋凸部與該第一感測區相鄰;一第一連接臂,用以承載該第一遮擋板;一第二遮擋板,包括一第二遮擋凸部及一第二感測區,其中該第二遮擋凸部及該第二感測區設置在該第二遮擋板的一第二上表面,且該第二遮擋凸部與該第二感測區相鄰;一第二連接臂,用以承載該第二遮擋板;及至少一驅動裝置,包括一驅動馬達及一軸封裝置,該驅動馬達經由該軸封裝置連接該第一連接臂及該第二連接臂,並分別驅動該第一遮擋板及該第二遮擋板朝相反的方向擺動,使得該第一遮擋板及該第二遮擋板在一開啟狀態及一遮擋狀態之間切換,其中該遮擋狀態的該第一遮擋板及該第二遮擋板相互靠近,而該開啟狀態的該第一遮擋板及該第二遮擋板之間則形成一間隔空間。 A shielding device, comprising: a first shielding plate, including a first shielding convex part and a first sensing area, wherein the first shielding convex part and the first sensing area are arranged on a part of the first shielding plate a first upper surface, and the first shielding convex portion is adjacent to the first sensing area; a first connecting arm is used to carry the first shielding plate; a second shielding plate includes a second shielding convex portion and a second sensing area, wherein the second blocking protrusion and the second sensing area are disposed on a second upper surface of the second blocking plate, and the second blocking protrusion and the second sensing area adjacent; a second connecting arm for carrying the second shielding plate; and at least one driving device including a driving motor and a shaft sealing device, the driving motor is connected to the first connecting arm and the first connecting arm through the shaft sealing device two connecting arms, and respectively drive the first shielding plate and the second shielding plate to swing in opposite directions, so that the first shielding plate and the second shielding plate are switched between an open state and a shielding state, wherein the The first shielding plate and the second shielding plate in the shielding state are close to each other, and a space is formed between the first shielding plate and the second shielding plate in the open state. 如請求項8所述的遮擋裝置,其中該遮擋狀態的該第一遮擋凸部及該第二遮擋凸部形成一環狀遮擋凸部,而該第一感測區及該第二感測區則形成一環狀感測區,該環狀感測區位於該環狀遮擋凸部的外側。 The shielding device of claim 8, wherein the first shielding convex portion and the second shielding convex portion in the shielding state form an annular shielding convex portion, and the first sensing area and the second sensing area Then, a ring-shaped sensing area is formed, and the ring-shaped sensing area is located outside the ring-shaped shielding protrusion. 如請求項8所述的遮擋裝置,其中該第一遮擋凸部及該第二遮擋凸部為封閉形狀的管狀凸起。 The shielding device according to claim 8, wherein the first shielding convex portion and the second shielding convex portion are closed-shaped tubular protrusions.
TW110214701U 2021-12-09 2021-12-09 Shielding device and thin film deposition machine with shielding device TWM627664U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115642112A (en) * 2022-11-24 2023-01-24 西安奕斯伟材料科技有限公司 Back sealing device and method for silicon wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115642112A (en) * 2022-11-24 2023-01-24 西安奕斯伟材料科技有限公司 Back sealing device and method for silicon wafer

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