TWM498961U - 高頻寬互連線的熱絕緣結構 - Google Patents

高頻寬互連線的熱絕緣結構 Download PDF

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Publication number
TWM498961U
TWM498961U TW103211714U TW103211714U TWM498961U TW M498961 U TWM498961 U TW M498961U TW 103211714 U TW103211714 U TW 103211714U TW 103211714 U TW103211714 U TW 103211714U TW M498961 U TWM498961 U TW M498961U
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Taiwan
Prior art keywords
die
interconnect system
dielectric
substrate
wire
Prior art date
Application number
TW103211714U
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English (en)
Inventor
Sean S Cahill
Eric A Sanjuan
Original Assignee
Rosenberger Hochfrequenztech
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Application filed by Rosenberger Hochfrequenztech filed Critical Rosenberger Hochfrequenztech
Publication of TWM498961U publication Critical patent/TWM498961U/zh

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    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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Description

高頻寬互連線的熱絕緣結構
本案闡述可減少轉移至晶粒或從晶粒轉移熱但仍能進行頻寬互連之隔熱結構，一個低功率晶粒能隔絕一個高功率晶粒之熱或阻絕高功率雷射或類似裝置所產生之熱。
電子裝置與組件是在不斷增加速度與不斷增加頻率範圍狀況下操作，一般類型的半導體封裝是使用能連接於一個基板或導線架，然後再連接於第二層互連線、通孔、基板或封裝跟蹤裝置、焊接球等之引線鍵合法，用以連接於一個電子裝置之一個印刷電路板(PCB)。
由於速度增加，電力要求也增加，因此須要將廢熱從晶粒釋出，這是堆疊晶粒的一個特殊問題，應以基板材料或其他發熱元件將堆疊的內部晶粒之熱隔絕於頂部與底部。
請注意先前技術之問題與缺失，本創作之一個目的在提供至少有一個晶粒之一個互連系統，能有效去除一個發熱元件，如一個熱作用晶粒所產生之廢熱。
精於此技藝者均能完成本創作之前述與其他目的，但本創作是有關一個晶粒互連系統，包括一個有許多連接墊之晶粒，一個與晶粒隔熱之發熱元件，一條以上從晶粒延伸至發熱元件之導線，各導線有一個具有芯直徑之金屬芯、一個具有介電質厚度在金屬芯附近之介電質層與一個連結於接地線之外金屬層，其特徵為至少有一條導線暴露於周圍狀況下， 以將發熱元件至晶粒之熱轉移降至最小程度。導線得為一條扁帶導線，附屬項旨在闡述本發明之最佳實施例。
此外，敏感感測元件或其他電子組件能被隔絕由一個高功率晶粒所產生之熱，故至少有一條導線從高功率晶粒延伸至熱感測電子組件。
10‧‧‧帶狀導線
11‧‧‧普通基板
12‧‧‧導體晶粒封裝\晶粒
14‧‧‧熱作用晶粒雷射模組/發熱元件
16‧‧‧低熱傳導性基板
22‧‧‧金屬芯
24‧‧‧介電質塗層
50‧‧‧清洗
51‧‧‧連接墊
52‧‧‧連接
53‧‧‧遮蔽
54‧‧‧堆積
55‧‧‧介電質堆積步驟
57‧‧‧金屬化作業
58‧‧‧過程重複多次
59‧‧‧包覆導線
204‧‧‧第二塗層
202‧‧‧引線鍵合金屬導體
210‧‧‧BGA封裝
206‧‧‧互連線金屬化法
214‧‧‧短導線
212‧‧‧長導線
218‧‧‧基板
216‧‧‧晶粒
222‧‧‧焊球
220‧‧‧通孔
300‧‧‧導線架封裝/晶粒封裝
圖1與圖2係一個高頻寬晶粒至雷射模組互連系統之平面圖與側面圖，晶粒與雷射模組能相互隔熱。
圖3係製造介電質導線與外接地線連接金屬化層之方法步驟。
圖4係製造介電質導線與外接地線連接金屬化層之一個減成法。
圖5係一個BGA封裝，其有介電質導線與外接地線連接金屬化層。
圖6係導線架封裝之一部份，其有介電質導線與外接地線連接金屬化層。
圖1所示者為適合高頻寬互連線之一條以上帶狀導線10(或在其他實施例中為個別導線)，被用來連接一個導體晶粒封裝12與一個熱作用晶粒、雷射模組14或其他發熱元件。圖1所示者為一個能以高速發射相干光(如箭頭所示)之發熱雷射模組14，被裝設於一個散熱片上。藉著一個低熱傳導性基板16之介入，模組14被熱隔絕至最大可能程度，該基板部包括無機材料、聚合物、複合材料如支撐於聚合物中之無機黏土、空氣或導向材料等。連接導線數量與帶狀導線10導熱性可藉由高頻寬信號再減至最小程度，且該信號可隨意與薄外金屬化層連結。在其他實施例中，可藉由一種非金屬外導電塗層，如導向石墨烯或氧化銦錫等再減低導熱性。帶狀導線10能以設有介電質塗層金屬芯22之導線形成，沿著導線長度設有完全熔合或 部份熔合或在某些實施例中未熔合之介電質塗層24。帶狀導線10延伸至封裝12外部而進入大氣中，以協助從發熱元件傳熱。或者帶狀導線10可用適當的主動或被動散熱器以對流或接觸方式冷卻之，包括利用流動的空氣或液體、高導熱性金屬、其他散熱器或主動冷卻器，如壓電冷卻器。此外，在大氣中隔熱與傳熱可幫助防止在雷射模組操作當中使晶粒產生過熱狀況。
在其他實施例中，採用類似隔熱結構、敏感感應元件或其他電子組件，能隔絕由一個高功率晶粒所產生之熱，該等裝置得為實用設施，如晶粒測輻射熱劑或敏感CCD(感光耦合元件)或CMOS(互補金屬氧化物導體)測光陣列。
介電質塗層是以具有所欲電熱特性之外接地金屬化材質所塗覆，同時經由氧化與其他化學效應，亦可改善聚合物降解之機械特性與阻力。在其他實施例中，分別設有連接墊之第一與第二晶粒係由兩個個別扁帶互連，而該等扁帶是由包覆金屬之熔合介電質塗層所構成，而扁帶互連形成過程始於一條導線金屬芯與晶粒與基板連接墊之連結。金屬芯塗佈一層介電質與金屬化塗層，且金屬將連接於一條接地線(可能要求一個個別的雷射脫落或其他介電質去除步驟，裨能進入接地連接墊)。有關空腔封裝，晶粒可裝設一個密封蓋或其他蓋子，否則晶粒可(連同扁帶導線)塗覆一層射出化合物、頂部封裝環氧樹脂或其他合適的包覆材料，個別延伸出包覆材料外或依要求共同設於一個多晶粒封裝內。
在其他實施例中，適合用於互連半導體晶粒封裝或延伸於一個封裝內晶粒間之扁帶導線，在堆疊晶粒實施例中有特別的用途。需要改道之晶粒基板通常是以導熱性不佳之絕緣材料製成，若使用以熔合介電質塗佈的金屬芯與一個可接地最外邊金屬化層所作成之扁帶導線時，則可能去除內部晶粒的熱或將熱從一個晶粒傳送至一個基板。
在另一個實施例中，使用以前述一條扁帶導線所作成之一條封裝對封裝連接線以及在一個一般射出封裝內之一條晶粒對晶粒互連接線與/或一條晶粒對基板扁帶連接線。此外，堆疊封裝也被延伸於堆疊晶粒間 之扁帶所支撐。互連封裝之扁帶可被連結於一個”翼狀”銅或鋁散熱器或散熱片，以增強傳熱與散熱功能。若有需要時，可使用主動或被動空氣或液體冷卻以從翼狀散熱片去除熱。
在某些實施例中，扁帶之電熱特性可藉著所形成半導體晶粒封裝中所使用之介電導線上的介電質塗層加以調整之，以產生不同的介電質厚度，同時，不同介電塗佈時間與製造步驟可形成厚、薄與中等的介電質厚度。芯直徑與介電質厚度皆可以改變。在某些實施例中，堆積介電質的成份亦可改變，例如一個金屬芯以不同介電質材料圍繞，再被一個可接地金屬塗層所包圍介電等。此舉可使像有良好隔汽層、抗降解氧之高性能介電質得以稀薄方式堆積於一種低價介電質材料之一個厚層上面。在其他實施例中，各種不同厚度之多層介電質可由薄金屬層分隔，且最外層金屬層將被連接於接地線。
薄介電質層通常提供適合電線之阻抗，厚介電質層則有利於信號完整性與金屬層將被連接於相同接地線。請注意芯直徑與介電質厚度組合是可能的，且可執行一系列該等步驟，以達成兩個以上阻抗。在某些實施例中，在電線中亦可設有大芯，以增加電處理能力、降低電線溫度或進一步減低電源與接地線任何電感，免除使接地線彈跳或電力下降更加惡化之可能。此外，亦可使用中等厚度之介電質層，乃因許多封裝可能在設置三(3)條導線或各種不同介電質厚度時較有利。例如，一條中等介電質厚度之導線可被用來連接大幅不同阻抗之電源與負載源，以使電力傳送達最大程度，例如，一個10歐姆(ohm)電源可用一條20歐姆導線來連接一個40歐姆負載源。此外，由於介電質成本可能較高，因此可利用厚介電質使重要的信號路徑互相連通，如係次要路徑、重設、或類似的導線則可塗覆一層厚度大於電力導線但小於重要信號路徑(中等厚度)之介電質層。此方式的優點是可以降低介電質堆積材料成本與時間。
也可依據引線鍵合直徑選擇精確的介電質塗層厚度，以達到各導線之特定期望阻抗值。
一條同軸線之特性阻抗顯示於方程式(1)，其L為每單位長度之阻抗；C為每單位長度之電感；a為鍵合電線之直徑；b為介電質之外徑；與ε為同軸介電質之相對電容率。
圖3所示者為一個實施例，其介電質塗層導線及外接地金屬層之製作可用以下步驟處理之。清洗50晶粒與基板上之連接墊，並以引線鍵合法連接晶粒與連接墊51，且一個第二直徑導線能被連接52(如：一條適合電力連接線之大直徑導線)；或晶粒之部份能被遮蔽53或以其他方式被防護以准許有選擇性的堆積處理。一層以上的相同或不同組成的介電層可被沉積54，接著以部分雷射或熱消融方式，或化學方法除去介電質，以使用在介電質沉積步驟55中覆蓋的接地。此步驟為非必要的，乃因在某些實施例中，接地線通孔的需要可能被刪除，尤其是在較高頻率下操作之晶粒更甚尤之，乃因一條虛擬射頻(RF)接地線能以電容耦合方式裝設之。然後進行金屬化作業57，包括有一個金屬層之介電質，其形成於導線之最外層的金屬化層，並將導線連接於接地線。全部過程能重複多次，對使用選擇性堆積技術之實施例很有用，尤其是對支撐多晶粒或複合晶粒或多種阻抗導線之實施例特別有用。在最終步驟中是有關非空腔封裝，可利用附著成型法來包覆導線59。其他實施例與其他不同方法步驟也在US20120066894與6,770,822號美國專利中揭露之，其成為本案之一部份提供參考。
在某些實施例中，可修改或增加前揭製程，例如，經由使用化學(電泳)、機械(表面張力)、催化(底漆、電磁「UV(紫外線)、IR(紅外線)」、電子束等)或其他合宜技術等各種不同方法，能完成適形介電質塗層之提供。其中以電泳聚合物最佳，乃因其可倚賴自限反應，藉以調整電泳塗層液之製程參數或簡單添加劑、濃度、化學物、熱力或時間變化等因素，即可輕易地堆積精確的厚度。
在其他實施例中，可使用介電質預塗的鍵合電線來形成導線。商業供應的塗層電線之介電質厚度通常比必要製作的厚度還薄，例如 50歐姆導線，可採用前面討論的介電質堆積步驟來增加介電質厚度，用以設定所欲阻抗。使用這些預塗電線能簡化製作同軸線所需之其他製程步驟，並能產生較薄層之所需氣相堆積介電質並使製作接地通孔之處理時間更快，且能使用預塗鍵合電線來防止間距窄小或交叉導線短路。在某些實施例中，預塗鍵合電線能設有以感光材料所製成之介電質，以形成可選擇的圖案技術。
在其他實施例中，可使用聚對二甲苯(Parylene)，聚對二甲苯為商業用名稱，在各種不同化學氣相堆積中，聚對二甲苯聚合物可充當防潮層與介電質阻隔層使用。利用一種改良的聚對二甲苯堆積系統，能使聚對二甲苯在一個增長有限濃縮反應中形成，同時該系統中的晶粒、基板是與導線和一個光電板對齊，該光電板准許進行EM(電磁)幅射(IR(紅外線)、UV(紫外線)等)以精確方式撞擊，以產生可選擇的介電質增長率。此法優點是可將製作接觸通孔或大幅去除聚對二甲苯所需要的製程降至最低程度或消除。
由於在氧氣、水蒸氣與熱力呈現氧氣斷裂現象，吾人已知聚對二甲苯與其他介電質會產生降解作用。損害能由可形成氧氣與水蒸氣阻隔層之金屬層降低，3-5 micron厚薄的金屬層能形成真正密封介面。如因電、熱或製造要求，聚對二甲苯或其他介電質已選擇性地被去除或未堆積於某些區域時，則可使用具有氧氣與水蒸氣阻隔性之各種不同聚合物，如聚七烯醇(PVA)即為廣為採用的一種聚合物原料。這些聚合物能被用於在聚對二甲苯表面，進行頂部封裝、網版印刷、模板印刷、龍車式點膠或噴射等作業，該表面將暴露於氧氣或H2 O(水)蒸氣環境中。使用水蒸氣隔阻性聚合物優點為能成為降低成本策略的一部份，乃因可能另外要求塗層較厚之高成本聚對二甲苯或其他氧敏感材料。
所有前述方法步驟能受益於各種不同選擇堆積技術，選擇堆積法得為物理遮蔽法、定向堆積法、光阻法或其他合適的方法，以確保在堆積時，在金屬芯、介電質層或其他最外層有不同的堆積厚度。雖然選擇 堆積法可用加成法來設置導線，亦可使用減成法去除介電質或金屬，以形成產生不同阻抗之互連。例如，由一個以上晶粒所形成之封裝能被引線鍵合，以適合所有封裝與裝置墊互連。在圖4中，闡明一個晶粒封裝之製造步驟與結構，介電質塗層可在一個引線鍵合金屬導體202上堆積(步驟A)成一個X-A厚度，其A為二次互連抗阻所需之介電質厚度，而二次抗阻引線鍵合介電質能被去除(步驟B)，如利用一種蝕刻法去除，再以一種第二塗層204堆積法(步驟C)去除，然後以兩條互連線金屬化法206(步驟D)去除。消除過程將產生兩個不同抗阻之引線鍵合。
圖5中的一個實施例說明一種球柵陣列(BGA)，包括有精選導線部份或全部介電質熔合之介電質與金屬塗層導線，用以改善隔熱性或提供本案所述適當高頻寬互連電線。
BGA是廣泛使用於積體電路之一種表面黏著封裝，通常能比雙列式封裝(dual in-line)、導線架或其他扁平封裝提供更多的互連銷，乃因BGA整個底部能供連接墊使用。在許多類型的BGA封裝中，一個晶粒216被連結於一個基板218，其有連接於連接墊之資料輸入通孔220。引線鍵合可用來連接頂側晶粒216與墊/通孔220，故可從基板之一個頂側部至底部提供電力連接。在一種BGA封裝中，焊球222被連結於封裝底部，並以黏性助焊劑固定於定位，直到焊接於一個印刷電路板或其他基板時為止。如本案所述，傳統BGA封裝引線鍵合可由改良的導線取代，該導線有一個介電質層與一個外可接地金屬層。導線在一個內芯部與一個外金屬層上有各種不同介電質厚度，並以選擇方式將最佳化，以擁有特定的抗阻，其能被選擇成為不同或部份相配之介電質層厚度。如圖5所示，長導線212與短導線214被支撐著。
一種改良BGA封裝組可要求正面朝上連結晶粒至基板，其支撐在基板上一個通孔鄰近所形成之一個連接墊。如適合各要求互連時，此組合為引線鍵合式，在基板之一個連接墊與晶粒之一個連接墊間形成一個引線鍵合裝置。低頻率與功率輸入裝置被連接於低頻信號導線，而高頻率 輸入與輸出裝置則是被連接於高頻信號導線。在某些實施例中，低頻率與功率輸入裝置能有一個不同於高頻信號導線之厚度，然後，此組合被塗佈任何實質上保形介電質材料。由於具有低成本、容易真空堆積與優異性能等特性，因此可採用聚對二甲苯。導線架連結點附近一小部份介電質層能以選擇方式以蝕刻法、熱降解法抑或雷射脫落法去除之，用以形成至接地接點或接地屏蔽層之電力連接。同樣地，晶粒連接墊附近一小部份它介質層被去除，以准許接地連接。在將一個金屬化層塗覆於介電質層頂部後連接至結構內接地線，以形成一個接地線屏蔽。最佳金屬層之厚度之選擇應考慮集膚深度及DC(直流)電阻等問題，並主要應由一種優良的導電體，如銀、銅或金所構成。在大部份用途中，一個1微米厚度合乎功能要求，惟較厚塗層能將導線間干擾降至最低程度。可利用平板印刷或其他遮蔽法與電鍍法或其他選擇堆積法之結合，將這些塗層加入限定區域內。在切割(單切)與測試後，以在晶粒上設置一個包覆模或一個蓋子的方式可完成封裝。
圖6所闡述之一個實施例為晶粒封裝300之低價導線架，包括從晶粒延伸至一個導線架之引線鍵合裝置，可用形成一個導線架條之方式製作該導線架，該導線架條包含個別封裝位置與外架部份之兩度陣列。導線架是以傳統方式製作，並能包括以蝕刻法、沖壓法或電堆積法所形成之個別導線。導線架條能被放置於一個模具內，包括但不限定於射出成型或轉移成型裝置。一種適合的介電質材料，最好是塑膠料，例如商業供應環氧成型模料，被射出、抽送或其他方式轉移至模具內，以形成一個導線架/成型材料化合物結構。成型材料之特性對其介電質定值、損耗、切線、電散佈性、溫度、溼度以及其他機械性能屬性是重要的。
在所形成的複合導線架條上之各封裝置位置被清除脫模料或成型溢料，且被準備在暴露的導線架金屬部份堆積一層金屬漆。此步驟可利用電鍍技術，如浸入法或電鍍法來完成，且金屬可選擇用來抑制腐蝕與容易執行引線鍵合。最後完工的一個例子是在塗抹一層鍍金後再塗抹一層薄鎳(防護用)(增強防護性及引線鍵合功能)。然後，所形成成型導線架條 之各封裝位置可被增設所欲晶粒，其被連結於底部，且依特別封裝用途之機械與熱特性來選擇晶粒連結材料。然後引線鍵合所形成之組合，以適合各所欲之互連，且在導線架上一條導線與晶粒上一個連接墊間形成一個引線鍵合裝置。低頻率與功率輸入裝置被連接於低頻信號導線，而高頻率輸入與輸出裝置則是被連接於高頻信號導線。在某些實施例中，低頻率與功率輸入裝置能有一個不同於高頻信號導線之厚度。
如前揭BGA封裝210一樣，增設的導線架條被塗敷任何實質保形介電質材料，包括聚對二甲苯在內之塗層。如係聚對二甲苯時，最好是以膠帶遮蔽封裝底部，例如，含有壓克力膠之聚醯亞胺或類似材料，以防止堆積於最後連結於PCB(印刷電路板)之導線區，此舉可在後續步驟中更容易進行焊接工作。導線架連結點附近一小部份介電質層能以選擇方式以蝕刻法、熱降解法抑或雷射脫落法去除之，用以形成至接地接點或接地屏蔽層之電力連接。同樣地，晶粒連接墊附近一小部份它介質層被去除，以准許接地連接。在將一個金屬化層塗覆於介電質層頂部後連接至結構內接地線，以形成一個接地線屏蔽。最佳金屬層之厚度之選擇應考慮集膚深度及DC(直流)電阻等問題，並主要應由一種優良的導電體，如銀、銅或金所構成。在大部份用途中，一個1徵米厚度合乎功能要求，惟較厚塗層能將導線間干擾降至最低程度。可利用平板印刷或其他遮蔽法與電鍍法或其他選擇堆積法之結合，將這些塗層加入限定區域內。在切割(單切)與測試後，以在晶粒上設置一個包覆模或一個蓋子的方式可完成封裝。
本創作主要在揭示一個晶粒互連系統，包括一個晶粒，其分別有許多連接墊、一個與晶粒隔熱之發熱元件、一條以上從一個晶粒延伸至發熱元件之導線、各導線有一個具有芯直徑之金屬芯、一個具有介電質厚度在金屬芯附近之介電質層與一個連結於接地線之外金屬層，其導線至少一部份暴露於周圍狀況下，以將發熱元件至晶粒之熱轉移降至最小程度。
此外，本創作包括扁帶導線、非金屬外塗層、BGA封裝、導線架封裝、一個將發熱元件連接於一個普通基板之晶粒、一條封裝晶粒至 基板之連接線、一個散熱器至散熱片之連接線、一個單獨或附於散熱器之液體冷卻裝置以及充一個當發熱元件使用之雷射裝置等。
210‧‧‧BGA封裝
212‧‧‧長導線
214‧‧‧短導線
216‧‧‧晶粒
218‧‧‧基板
220‧‧‧通孔
222‧‧‧焊球

Claims (15)

  1. 一種晶粒互連系統，包括一有許多連接墊之晶粒；一與該晶粒隔熱之發熱元件；一條或多條從該該晶粒延伸至該發熱元件之導線，各導線有一個具有芯直徑之金屬芯、一個具有介電質厚度在該金屬芯附近之介電質層與一個連結於接地線之外金屬層，其特徵為至少有一條該導線暴露於周圍狀況下、或至少有一條該導線為有傳導性的、或至少有一條該導線為接觸冷卻的，以將該發熱元件至該晶粒之熱轉移降至最小程度。
  2. 如申請專利範圍第1項之晶粒互連系統，其特徵為至少有一條帶狀導線從該晶粒延伸至該發熱元件。
  3. 如申請專利範圍第1項或第2項之晶粒互連系統，其特徵為該介電質層係沿著該導線長度全部或部份熔合。
  4. 如申請專利範圍第1項或第2項之晶粒互連系統，其特徵為該發熱元件是一個雷射模組或一個熱作用晶粒。
  5. 如申請專利範圍第1項或第2項之晶粒互連系統，其特徵為該晶粒與該發熱元件間有一個低熱傳導性基板。
  6. 如申請專利範圍第5項之晶粒互連系統，其特徵為該低熱傳導性基板包括無機材料、聚合物或複合材料。
  7. 如申請專利範圍第1項或第2項之晶粒互連系統，其特徵為至少一條該導線有一個非金屬外導塗層。
  8. 如申請專利範圍第1項或第2項之晶粒互連系統，其特徵為該導線是由一個被動散熱器、主動散熱器、流動空氣、流動液體、高熱傳導性金屬或主動冷卻劑所冷卻。
  9. 如申請專利範圍第1項或第2項之晶粒互連系統，其特徵為該晶粒與該發熱元件係設於一個普通基板上。
  10. 如申請專利範圍第1項或第2項之晶粒互連系統，其特徵為有一個敏感 感應元件，該敏感感應元件為熱幅射測定器、一敏感CCD(感光耦合元件)測光器或一敏感CMOS(互補金屬氧化物導體)測光器。
  11. 如申請專利範圍第1項或第2項之晶粒互連系統，其特徵為設有一條封裝該晶粒至一基板之連接線。
  12. 如申請專利範圍第1項或第2項之晶粒互連系統，其特徵為設有一個晶粒基板，該晶粒基板包括准許形成一個BGA封裝之填充通孔。
  13. 如申請專利範圍第1項或第2項之晶粒互連系統，其特徵為設有一個晶粒基板，該晶粒基板有一個可形成一個導線架封裝之導線架。
  14. 一種BGA封裝，包括如申請專利範圍第12項所述之一種晶粒互連系統。
  15. 一種導線架封裝，包括如申請專利範圍第13項所述之一種晶粒互連系統。
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