CN105359268B - 高带宽互连所用的隔热结构 - Google Patents

高带宽互连所用的隔热结构 Download PDF

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Publication number
CN105359268B
CN105359268B CN201480038213.1A CN201480038213A CN105359268B CN 105359268 B CN105359268 B CN 105359268B CN 201480038213 A CN201480038213 A CN 201480038213A CN 105359268 B CN105359268 B CN 105359268B
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bare die
lead
interconnection system
dielectric
die interconnection
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CN105359268A (zh
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S·S·卡希尔
E·A·圣胡安
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Rosenberger Hochfrequenztechnik GmbH and Co KG
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Rosenberger Hochfrequenztechnik GmbH and Co KG
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H—ELECTRICITY
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    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Abstract

本发明涉及一种裸片互连系统，包括：裸片，其具有多个连接压焊点；发热元件(14)，其与所述裸片(12)热隔离(16)；一个或多个引线(22)，其从所述裸片(12)延伸至所述发热元件(14)，各引线包括具有芯直径的金属芯(22)、包围所述金属芯(22)的具有电介质厚度的电介质层(24)和贴装接地的外金属层，其中，一个或多个引线的沿长度的至少一部分被暴露至环境条件以及/或者以对流方式或通过接触冷却，以使从所述发热元件(14)向所述裸片(12)的热传递最少。

Description

高带宽互连所用的隔热结构
技术领域
说明在仍允许高带宽互连的同时减少相对于裸片的热传递的隔热结构。可以使低功率裸片与高功率裸片的热或高功率激光器等所产生的热隔离。
背景技术
电子器件和组件正以不断增加的速度并且在越来越高的频率范围内进行工作。普及的半导体封装体类型使用可以连接至衬底或引线框架的焊线，而该衬底或引线框架可以连接至第二级互连件、通孔、衬底或封装体走线或者焊球等，从而连接至电子器件的印刷电路板(PCB)。
随着速度增加，功率要求和用以以远离裸片的方式传递废热的需求也增加。这对于堆叠的裸片而言成为特殊问题，其中利用衬底材料或其它发热裸片使叠层中的内部裸片的顶部和底部有效地绝缘。
发明内容
考虑到现有技术的这些问题和不足，本发明的目的是提供有效地去除了如热有源裸片那样的发热元件所产生的废热的具有至少一个裸片的互连系统。
在本发明中实现本领域技术人员将明白的上述和其它目的，其中本发明涉及一种裸片互连系统，包括：裸片，其具有多个连接压焊点；发热元件，其与所述裸片热隔离；一个或多个引线，其从所述裸片延伸至所述发热元件，各引线包括具有芯直径的金属芯、包围所述金属芯的具有电介质厚度的电介质层和贴装接地的外金属层，其中，至少一个引线的沿长度的至少一部分被暴露至环境条件以及/或者以对流方式或通过接触冷却，以使从所述发热元件向所述裸片的热传递最少。引线可以是带状引线。从属权利要求涉及本发明的有利实施例。
可选地，可以使敏感的传感器元件或其它电子组件与高功率裸片所产生的热隔离。在这种情况下，至少一个引线从所述高功率裸片延伸至热敏感的电子组件。
附图说明
图1和2分别是高带宽裸片向激光模块互连结构的平面图和侧视图，其中裸片和激光模块彼此热隔离；
图3示出用于制造具有外接地金属的电介质涂布引线的方法步骤；
图4示出用于制造具有外接地金属的电介质涂布引线的减成法；
图5示出包括具有外接地金属的电介质涂布引线的BGA封装体；以及
图6示出包括具有外接地金属的电介质涂布引线的引线框架封装体的一部分。
具体实施方式
如从图1看出，适合高带宽互连的一个或多个带状引线10(或者在其它实施例中为个体引线)用于使半导体裸片封装体12和热有源裸片、激光模块14或其它发热元件相连接。如从图1看出，能够进行相干光的高速发射(箭头)的发热激光模块14安装在散热块上。通过插入导热系数低的衬底部16，最大限度地使该模块14热隔离，其中该衬底部16可以包括无机材料、聚合物、诸如聚合物所支持的无机粘土等的复合材料、空气或定向材料等。利用可选地与薄的外金属化层耦合的高带宽信令来进一步使连接引线的数量和带10的热传导率最小。在其它实施例中，可以通过设置诸如由定向石墨烯或氧化铟锡能够提供等的非金属外导电涂层来进一步减小导热系数。带10可以由具有电介质涂布金属芯22的引线构成，其中沿着引线的长度，金属芯22完全熔融、部分熔融或者在特定实施例中未熔融有电介质涂层24。带状引线10延伸到封装体12外而进入环境空气内，从而帮助使热传递得远离发热元件。可选地，可以利用适当的包括流动空气或液体、高热传导率金属或其它散热片的主动或被动的热式散热片、或者诸如压电冷却剂等的活性冷却剂，来以对流方式或通过接触使带状引线10冷却。热隔离和向环境空气内的热传递共同可以有助于防止从在激光模块的工作期间所产生的极热条件对裸片造成损坏。
在替代实施例中，使用相同的隔热结构，可以使敏感的传感器元件或其它电子组件与高功率裸片所产生的热隔离。这例如对于连接至热辐射仪或者敏感的CCD或CMOS光检测阵列的裸片而言具有实用性。
电介质涂层被外接地金属覆盖，其中该外接地金属提供期望的热特性和电气特性，同时还通过氧化或其它化学效果提高了机械特性和耐聚合物降解性。在另一实施例中，分别具有连接压焊点的第一裸片和第二裸片经由包括利用金属封装的熔融电介质涂层的两个单独带而相互连接。用于形成带状互连件的工艺从将引线的金属芯贴装至裸片和衬底连接压焊点而开始。金属芯被涂布电介质并且被金属化，其中金属接地(从而可能要求单独的激光烧蚀或其它电介质去除步骤以使得能够到达接地连接压焊点)。对于空腔封装体，可以向裸片装配密封盖或其它罩。在其它情况下，可以利用塑封料、环氧圆顶封装体或其它适当的密封材料覆盖裸片，从而(利用带状引线)单独延伸到封装材料或根据需要共同延伸到一个多裸片封装体中。
在另一实施例中，适合使半导体裸片封装体相互连接或者在封装体内的裸片之间延伸的带状引线在堆叠的裸片实施例中特别有用。重布所需的裸片衬底通常由热传导率也差的电气绝缘材料构成。使用由具有接地可连接的最外侧金属层的熔融电介质涂布金属芯构成的带状引线，可以从内部裸片去除热、以及从裸片向衬底传递热。
在另一实施例中，使用利用诸如以上所论述的带状引线的封装体到封装体连接以及共用模具封装体中的裸片到裸片互连、以及/或者裸片到衬底带连接。此外，还支持堆叠的封装体，其中带在堆叠的裸片之间延伸。可以将使封装体相互连接的带贴装至“翼状的”散热铜或铝片或块以提高热传递和散热。在期望的情况下，可以使用主动或被动的空气或液体冷却来从翼状的块去除热。
在特定实施例中，可以通过使半导体裸片封装中所使用的电介质涂布引线被形成为具有变化的电介质厚度来调整带的热特性和电气特性。通过改变电介质涂布次数和制造步骤可以实现厚的厚度、薄的厚度和中间厚度。可以改变芯直径和电介质厚度这两者。在特定实施例中，还可以改变所沉积的电介质的成分，其中例如，明显不同的电介质的材料包围金属芯，反过来电介质由可接地的金属涂层包围。这样例如允许高性能的电介质具有优良的防蒸汽层或抗氧降解性等，以薄薄地沉积在厚的低成本的电介质材料的层上。在其它实施例中，厚度发生改变的多个层的电介质可以经由薄的金属层隔开，其中在最外侧金属层接地。
通常，薄的电介质层将提供低阻抗，从而适合功率线，厚的电介质有利于信号完整性，并且外金属层连接至相同的接地端。注意，芯直径和电介质厚度的组合是可以的，并且可以进行一系列的这些步骤以实现两个以上的阻抗。在特定实施例中，可以期望在功率线上具有大的芯以增加功率处理能力、降低功率线温度、以及/或者进一步降低电源以及将加剧接地反弹或功率跌落的接地线上的任何电感。由于许多封装体可以受益于具有三(3)个以上的不同电介质厚度的引线，因此中间厚度的电介质层也是有用的。例如，具有中间电介质厚度的引线可用于连接阻抗大大不同的源和负载以使功率传送最大化。例如，10欧姆的源可以连接至具有20欧姆的引线的40欧姆的负载。此外，由于电介质的成本可能高，因此可以使用厚的电介质来使重要的信号路径相互连接，其中可以利用厚度与功率引线相比更大但与重要的信号引线相比更小(中间)的电介质层来涂布状况或重置等不太重要的引线。有利地，这样可以减少电介质沉积材料的成本和时间。
可以与焊线直径相组合地选择电介质涂层的精确厚度，以针对各引线实现特别期望的阻抗值。
在等式(1)中给出同轴线的特性阻抗，其中：L是每单位长度的电感，C是每单位长度的电容，a是焊线的直径，b是电介质的外径，并且εr是同轴电介质的相对介电常数。
如图3所示，在一个实施例中，具有外接地金属的电介质涂布引线的制造可以使用以下步骤来进行。清洗(50)裸片和衬底上的连接压焊点，并且使用引线接合机使裸片连接至连接压焊点(51)。可选地，可以贴装(52)第二直径的配线(例如，适合功率连接的较大直径的配线)，或者可以对裸片的区域进行遮掩(53)或保护以允许进行选择性沉积。可以沉积(54)成分相同或不同的电介质的一个或多个层，之后对电介质的一部分进行选择性激光或热烧蚀或者化学去除，以使得能够到达在电介质沉积步骤中所覆盖的接地接点(55)。该步骤是可选的，这是因为，在一些实施例中，不需要接地通孔。由于可以通过电容耦合建立虚拟RF接地，因此这对于以较高频率进行工作的裸片而言尤其如此。之后进行金属化(57)，从而利用形成引线的最外金属化层的金属层覆盖电介质，并且还使引线接地。可以重复多次整个处理(58)，从而用于使用选择性沉积技术的实施例，并且特别用于支撑多裸片或者复杂的且阻抗发生变化的引线的实施例。在最后步骤中，对于非腔体封装体，可以使用包覆成型来封装引线(59)。在US20120066894和美国专利6,770,822中还描述了替代实施例和附加或变体的方法步骤，其中这两者的内容通过引用全部包含于此。
在特定实施例中，可以对所述的工艺进行修改和添加。例如，可以通过使用化学(电泳)、机械(表面张力)、接触反应(底漆)、电磁[UV,IR]、电子束、其它适当技术的各种方法来实现提供电介质的共形涂层。由于电泳聚合物可以依赖于如下的自限反应，因此这些电泳聚合物特别有利，其中这些自限反应可以通过调整工艺参数以及/或者针对电泳涂捕溶液的简单加成、浓度、化学、热或定时变化，来容易地沉积精确的厚度。
在其它实施例中，可以使用电介质预涂焊线来形成引线。尽管市售的涂布配线通常在电介质厚度方面与创建例如50欧姆的引线所需的配线相比在电介质厚度上更薄，但可以使用以上所论述的电介质沉积步骤来增加电介质厚度以设置期望的阻抗。使用这些预涂配线可以简化创建共轴所需的其它工艺步骤，并且可以使得所需的气相沉积电介质的层更薄且处理时间更快，从而创建接地通孔。可以使用预涂焊线来防止狭窄地间隔开或交叉的引线发生短路。在特定实施例中，预涂焊线可以具有由光敏材料制成的电介质以使得能够进行选择性图案化技术。
在其它实施例中，可以使用电介质聚对二甲苯。聚对二甲苯(Parylene)是用作水分阻挡层和电介质阻抗层的各种化学气相沉积聚(对苯二亚甲基)聚合物的商品名称。可以使用改进的聚对二甲苯沉积系统在生长受限的缩合反应中形成聚对二甲苯，其中在该聚对二甲苯沉积系统中，使裸片、衬底和引线与照相底板对齐，从而使得EM辐射(IR、UV或其它)能够以精确方式入射，这样引起电介质的选择性生长率。有利地，这样使针对用以创建接触通孔、聚对二甲苯的大量去除等的工艺的需求为最低限度或者不需要这些工艺。
已知聚对二甲苯和其它电介质在存在氧、水蒸汽和热的情况下由于氧断裂而发生降解。损坏可能受到形成优良的氧蒸汽阻挡层的金属层所限制，其中厚度为3～5微米的薄层能够形成真正的气密界面。可选地，如果选择性地去除了金属、或者由于电气、热或制造要求因而金属没有沉积在特定区域中，则可以使用各种基于聚合物的蒸汽氧阻挡层，其中聚乙烯醇(PVA)是广泛地使用的聚合物。可以对这些聚合物进行顶部密封、丝网印刷、用蜡纸印刷、门式分配、喷涂到将暴露至氧或H2O蒸汽环境的聚对二甲苯表面上。有利地，由于可能需要高成本的聚对二甲苯或其它对氧敏感的更厚层，因此使用防蒸汽层聚合物可以是降低成本策略的一部分。
如应当理解，所述的所有方法步骤全部受益于各种选择性沉积技术。选择性沉积可以通过物理遮掩、直接聚合物沉积、光致抗蚀法、或者用于在沉积时确保金属芯、电介质层或其它最外层上的差分沉积厚度的任何其它适当方法。尽管选择性沉积允许使用加成法来构建引线，但还允许使用去除电介质或金属以形成多个阻抗互连件的减成技术。例如，可以适当地对利用一个或多个裸片所填充的封装体进行引线接合，以使所有的封装体和器件压焊点相互连接。如针对例示裸片封装体的制造所用的步骤和结构的图4看出，可以将电介质涂层200以厚度X～A沉积(步骤A)到焊线金属导体202上，其中A是二次互连阻抗所需的电介质的厚度。例如可以通过蚀刻步骤去除(步骤B)二次阻抗焊线电介质，之后进行第二涂层204的沉积(步骤C)，之后进行这两个互连件的金属化(步骤D)。该减成工艺将创建两个明显不同的阻抗的焊线。
在针对图5所示的实施例中，说明包括电介质和金属涂布引线的球栅阵列(BGA)封装体，其中在这些引线中，对所选择的引线进行部分或全部电介质熔融，以提高热隔离特性或者提供足够的高带宽电气互连。
BGA是广泛地用于集成电路的表面安装封装，并且由于BGA的底表面整体可用于连接压焊点，因此与双列直插、引线框架或其它扁平封装体相比，BGA通常可以提供更多的互连引脚。在许多类型的BGA封装体中，将裸片216贴装至具有连接至连接压焊点的可填充通孔220的衬底218。焊线212、214可用于使顶侧的裸片216连接至压焊点/通孔220，结果提供从衬底的顶侧向底部的电气接线。在BGA封装件中，利用粘性焊剂将焊料球222贴装至封装体的底部并且保持在适当位置，直到焊接至印刷电路板或其它衬底为止。如这里所述，可以利用具有电介质层和可外接地金属层的改进了的引线来替换传统的BGA封装体的焊线。这些引线可以在内芯和外金属层内具有变化的电介质厚度，并且可以选择性地优化这些引线以具有特定阻抗，从而可被选择成至少部分基于电介质层厚度而不同或良好地匹配。如从图5看出，支撑长的引线212和短的引线214这两者。
更详细地，改进了的BGA封装体的组件可以要求将裸片以面朝上的方式贴装至衬底，从而支撑衬底中的在通孔周围以邻接方式形成的连接压焊点。针对所需的各互连件适当地对该组件进行引线接合，其中在衬底上的连接压焊点和裸片上的连接压焊点之间形成焊线。低频率和功率的输入连接至低频率的信号引线，而高频率的输入和输出连接至高频率的信号引线。在一些实施例中，低频率和功率的输入的厚度可以不同于高频率的信号引线的厚度。然后对组件进行任何基本保形的电介质材料的涂布。由于聚对二甲苯的低成本、便于真空沉积和优良的性能特性，因此可以使用聚对二甲苯。可以通过蚀刻、热降解或激光烧蚀来选择性地去除电介质层的在引线框架贴装点附近的一小部分，从而形成向接地接触点或接地屏蔽层的电气连接。同样，可以在裸片连接压焊点附近去除电介质层的一小部分，以允许接地连接。在将金属化层涂敷到电介质层的顶部之后在结构中接地，从而形成接地屏蔽。应当考虑到趋肤深度和DC电阻问题来选择优选的金属层的厚度，并且该厚度应主要包括诸如银、铜或金等的优良电气导体。对于大多数应用，1微米的涂层厚度对于功能而言是足够的，但更厚的涂层有助于使引线之间的串扰为最低限度。可以通过光刻法或其它掩蔽方法与镀法或其它选择性沉积方法的组合来在定义区域中添加这些涂层。可以通过将包覆成型件或盖放置在裸片上、之后进行切割(切单)并进行测试，来完成封装体。
可选地，在针对图6所示的实施例中，可以通过形成包含单独的封装部位和外侧框架部分的二维阵列的引线框架带材来制造包括从裸片延伸至引线框架的基于低成本的引线框架的裸片封装体300。引线框架制造是传统的，并且可以包括通过蚀刻、冲压或电沉积的单独引线的形成。可以将引线框架带材放置在包括但不限于注塑成型或传递成形设备的模具中。将适当的电介质材料(优选为诸如市售的环氧模塑料)注入、泵入或传递到模具内，以实现引线框架/模具材料复合结构。模具材料的性质对于这些模具材料的介质常数、损耗切线和电色散性质以及这些模具材料的温度、湿度和其它机械性能属性而言很重要。
对如此得到的复合引线框架带材上的各封装部位清洗脱模材料和/或溢料飞边，并且准备好将金属饰面沉积在引线框架的暴露的金属部分上。这可以通过诸如浸没或电镀等的镀技术来实现，并且将选择这些金属以用于腐蚀抑制并且容易进行引线接合。这种涂饰的示例是薄的镍层(以供保护)，之后是金层(向焊线添加保护和能力)。然后，可以利用贴装至基底的所需裸片填充如此得到的模制引线框架带材的各封装部位，其中针对特定封装应用的机械性质和热性质选择裸片贴装材料。然后，针对所需的各互连件适当地对如此得到的组件进行引线接合，其中在引线框架上的引线和裸片上的连接压焊点之间形成焊线。低频率和功率的输入连接至低频率的信号引线，而高频率的输入和输出连接至高频率的信号引线。在一些实施例中，低频率和功率的输入的厚度可以不同于高频率的信号引线的厚度。
如上述的BGA封装体210那样，然后对所填充的引线框架带材进行包括聚对二甲苯的任何基本保形的电介质材料的涂布。在聚对二甲苯的情况下，可以优选利用诸如具有丙烯酸粘合剂的真空兼容的聚酰亚胺等的胶带或者相似材料对封装体的底部进行掩蔽以防止沉积到引线的最终将贴装至PCB的区域上。这将便于在后续步骤进行更容易的焊接。可以通过蚀刻、热降解或激光烧蚀来选择性地去除电介质层的在引线框架贴装点附近的一小部分，从而形成向接地接触点或接地屏蔽层的电气连接。同样，可以在裸片连接压焊点附近去除电介质层的一小部分，以允许接地连接。在将金属化层涂敷到电介质层的顶部之后在结构中接地，从而形成接地屏蔽。应当考虑到趋肤深度和DC电阻问题来选择优选的金属层的厚度，并且该厚度应主要包括诸如银、铜或金等的优良电气导体。对于大多数应用，1微米的涂层厚度对于功能而言是足够的，但更厚的涂层有助于使引线之间的串扰为最低限度。可以通过光刻法或其它掩蔽方法与镀法或其它选择性沉积方法的组合来在定义区域中添加这些涂层。可以通过将包覆成型件或盖放置在裸片上、之后进行切割(切单)并进行测试，来完成封装体。
特别地，本发明涉及一种裸片互连系统，包括：裸片，其具有多个连接压焊点；发热元件，其与所述裸片热隔离；一个或多个引线，其从所述裸片延伸至所述发热元件，各引线包括具有芯直径的金属芯、包围所述金属芯的具有电介质厚度的电介质层和贴装接地的外金属层，其中，引线的沿长度的至少一部分被暴露至环境条件，以使从所述发热元件向所述裸片的热传递最少。
此外，本发明包括带状引线、非金属外涂层、BGA封装体、引线框架封装体、共用衬底上的裸片到发热元件连接、封装裸片到衬底连接、散热片或块连接、直接或利用散热片的流体冷却、以及作为发热元件的激光器。

Claims (16)

1.一种裸片互连系统，包括：
裸片(12)，其具有多个连接压焊点；
发热元件(14)，其与所述裸片(12)热隔离；
多于一个的引线(10)，其从所述裸片(12)延伸至所述发热元件(14)，各引线包括具有芯直径的金属芯(22)、包围所述金属芯(22)的具有电介质厚度的电介质层(24)，其中所述电介质层被贴装接地的外金属层覆盖，其特征在于，多于一个的引线的沿长度的至少一部分被暴露至环境条件以及/或者以对流方式或通过接触冷却，以使从所述发热元件(14)向所述裸片(12)的热传递最少。
2.根据权利要求1所述的裸片互连系统，其特征在于，所述发热元件(14)是激光模块。
3.根据权利要求1所述的裸片互连系统，其特征在于，在所述裸片和所述发热元件之间插入有导热系数低的衬底部(16)。
4.根据权利要求3所述的裸片互连系统，其特征在于，所述导热系数低的衬底部(16)包括无机材料和/或聚合物。
5.根据权利要求3所述的裸片互连系统，其特征在于，所述导热系数低的衬底部(16)包括聚合物中所支持的无机粘土。
6.根据权利要求1所述的裸片互连系统，其特征在于，至少一个引线的非金属外导电涂层。
7.根据权利要求6所述的裸片互连系统，其特征在于，所述至少一个引线的非金属外导电涂层包括定向的石墨烯或氧化铟锡。
8.根据权利要求1所述的裸片互连系统，其特征在于，利用主动或被动热式散热片、流动空气或液体、热传导率高的金属和/或主动冷却剂使所述引线(10)冷却。
9.根据权利要求1所述的裸片互连系统，其特征在于，利用至少一个压电冷却剂使所述引线(10)冷却。
10.根据权利要求1所述的裸片互连系统，其特征在于，所述裸片(12)和所述发热元件(14)配置在共用衬底(11)上。
11.根据权利要求1所述的裸片互连系统，其特征在于，包括敏感的传感器元件、或者敏感的CCD或CMOS光检测元件。
12.根据权利要求11所述的裸片互连系统，其特征在于，所述传感器元件为热辐射仪。
13.根据权利要求1所述的裸片互连系统，其特征在于，裸片衬底包括填充通孔以使得能够形成球栅阵列封装体即BGA封装体。
14.根据权利要求1所述的裸片互连系统，其特征在于，至少一个带状引线从所述裸片延伸至所述发热元件。
15.根据权利要求1所述的裸片互连系统，其特征在于，电介质涂层沿着所述引线(10)的长度完全或部分熔融。
16.一种球栅阵列封装体即BGA封装体(210)，其包括根据权利要求1至15中任一项所述的裸片互连系统。
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