TWM374648U - AC LED packaging structure - Google Patents
AC LED packaging structure Download PDFInfo
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- TWM374648U TWM374648U TW098219015U TW98219015U TWM374648U TW M374648 U TWM374648 U TW M374648U TW 098219015 U TW098219015 U TW 098219015U TW 98219015 U TW98219015 U TW 98219015U TW M374648 U TWM374648 U TW M374648U
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- emitting diode
- light emitting
- package structure
- insulating layer
- solid
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- 238000004806 packaging method and process Methods 0.000 title 1
- 239000007787 solid Substances 0.000 claims description 38
- 239000013078 crystal Substances 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 230000015556 catabolic process Effects 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 17
- 239000007788 liquid Substances 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 239000012790 adhesive layer Substances 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 5
- 230000033228 biological regulation Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 206010028980 Neoplasm Diseases 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 201000011510 cancer Diseases 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000009863 impact test Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000011076 safety test Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
Description
M374648 五、新型說明： 【新型所屬之技術領域】 本創作係關於一種交流發光二極體封裝結構，尤指一 種安全性佳之交流發光二極體封裝結構。 【先前技術】 圖1為習知發光二極體封裝結構之示意圖。一般之發 光二極體係包括一承載架10、以及一發光二極體晶片11。 其中，發光二極體晶片11係透過金屬導線12與承載架1 〇之 正極連接端101及負極連接端102電性連接；而發光二極體 晶片11則是透過液態導電膠13固設在承載架10上。 當使用液態導電膠13以將發光二極體晶片Η固設在 承載&10上時’液癌導電膠13容易包覆到發光二極體晶片 11外侧邊緣，過多的液態導電膠13甚至會溢至晶片表面， 而造成晶片部分遮光，使得出光面積便小而影響到發光效 率。同時，若液態導電膠13過多而碰觸到晶片表面之線路， 會造成漏電流及瓦數上升等問題發生，反而嚴重影绝到產 品可靠度。 此外，液態導電膠13中所含之銀粉粒徑較大，容易造 成發光二極體晶片11與承載架1 〇間之間距過大且不緊密， 使得晶片與承載架之散熱底座（圖中未示）接著效果不佳。 同時，更因銀粉之大粒徑，容易造成液態導電膠中有空隙 產生。一旦經尚溫焕烤，容易造成液態導電膠脆裂，並造 成導熱效果裂化。 3 M3/404» 目刖’上述發光二極體結構係主要應用在直流發光二 :體“ &無湏考量到耐高壓的問題。然而，若應用在交 流發，二極體上’往往因《導電膠絕緣效果不佳，而無 法承又女全法規之对高壓衝擊測試，而影響到交流發光二 極體封裝結構之安全性。 #於上述問題’目前亟需發展出一種交流發光二極體 、。構’其可通過國家安全規範之耐高壓測試以利產品之 生產及銷售。 【新型内容】 本創作之主要目的係在提供一種交流發光二極體封 裝結構，俾能通過國家安規之耐高壓測試，並防止漏電流 及瓦數上升等問題。 為達成上述目的’本創作交流發光二極體封裝結構， 匕括 承載架’其包括一正極連接端、及一負極連接端； 父發光一極體模組，係設於該承载架上，且該交流發 光二極體模組係與該正極連接端及該負極連接端電性連 接’以及一固晶絕緣膠層，係設於該交流發光二極體模組 及該承載架之間。 本創作之交流發光二極體封裝結構，係透過固晶絕緣 膠層本身之内聚力，除了可將交流發光二極體模組固設在 承載架上，更可解決液態導電膠包覆到晶片表面之問題而 提升出光效率。同時，當本創作之交流發光二極體封裝結 構連接市電使用時，可通過耐高壓測試而符合目前國家安 M374648 全規範，如 UL、CE、TUV' FCC、CSA、pSE、BSMI 等規 範，並可達到綠色、環保節能 '安全等目的。此外，本創 作之固晶絕緣膠層可阻絕操作時受外來高壓擊穿，而可維 持電性方面穩定以提升使用壽命。再者，本創作之固晶絕 緣膠層，其具有良好之絕緣能力，若人體不小心碰觸到本 創作之交流發光二極體封裝結構，不會有受傷或致死等問 題發生，而具有極佳之操作安全性。同時，因本創作之交 φ 流發光二極體封裝結構中之固晶絕緣膠層，在廣泛的範圍 溫度能均能維持良好的安定性且不易變色’故可維持交流 發光二極體模組與承載架間之接著性，而提升產品之穩定 性。 〜 於本創作之交流發光二極體封裝結構中，交流發光二 極體模組係包括複數發光二極體晶片，且發光二極體晶片 係相互串聯。此外，固晶絕緣膠層係包括複數固晶區塊， 且母一固晶區塊係對應於一發光二極體晶片。 於本創作之交流發光二極體封裝結構中，交流發光二 _ 極體模組係透過金屬導線與正極連接端及負極連接端電性 • 連接；而發光二極體晶片亦透過金屬導線相互串聯。其中， 金屬導線可為本技術領域常用之導線，且較佳為一金線。 此外’本創作之交流發光二極體封裝結構，可更包括 一散熱塊，係設於交流發光二極體模組下方，且使固晶絕 緣膠層位於散熱塊及交流發光二極體模組之間。其中，散 熱塊可為本技術領域常用之散熱金屬塊，且較佳為一散熱 銅塊。 M374648 再者’於本創作之交流發光二極體封裝結構中，發光 二極體晶片之厚度可為100微米以上，較佳係介於1〇〇〜2〇〇 微米之間。而固晶絕緣膠層之厚度較佳係介於50〜120微米 之間’更佳係介於50〜80微米之間。 另一方面，於本創作之交流發光二極體封裝結構中， 固晶絕緣膠層較佳為一固晶絕緣矽膠層，其外觀係呈乳白 色半透明’硬度為50〜60 Shore D，彈性模量為17〇〜19〇 N/mm2，密度為 1.〇〜1.2 g/cm3 (25 °C )，透光率為 1.5〜3% (400 nm/2 mm)，線膨脹係數為 200〜230 ppm (25-150。〇， 導熱率為0.15〜0.22 W/m.K，且絕緣破壞強度為23〜28 kV/mm 〇 【實施方式】 圖2係本創作一較佳實施例之交流發光二極體封裝結 構之示意圖。 •如圖2所示，本實施例之交流發光二極體封裝結構係 包括：一承載架20、一交流發光二極體模組21、以及一固 晶絕緣膠層23。其中，承載架20係包括一正極連接端201、 及一負極連接端202;交流發光二極體模組21係設於承載架 20上’且交流發光二極體模組21係與正極連接端201及負極 連接端202電性連接；而固晶絕緣膠層23，係設於交流發光 二極體模組21及承載架20之間。 在本實施例中，固晶絕緣膠層23係為一固晶絕緣矽膠 層。此外，固晶絕緣膠層23之厚度可介於50〜120微米之 間。於本實施例中，固晶絕緣膠層23之厚度係為80微米。 6 M374648 此外，於本實施例中，交流發光二極體模組21係包括 複數發光二極體晶片211，且發光二極體晶片21係透過金屬 導線22相互串聯。再者，交流發光二極體模组21亦透過金 屬導線22與正極連接端201及負極連接端202電性連接。於 本實施例中，所使用之金屬導線22係為一金線。 另一方面，於本實施例中，固晶絕緣膠層23係包括複 數固晶區塊23 1，且每一該固晶區塊23 1係對應於一發光二 極體晶片211。 此外’本實施例之交流發光二極體封裝結構更包括一 散熱塊24，係設於交流發光二極體模組21下方，且使固晶 絕緣膠層23位於散熱塊24及交流發光二極體模組21之間。 於本實施例中’散熱塊24為一銅散熱塊。 針對耐高壓問題’本實施例之發光二極體晶片2丨丨之 厚度可介於100〜200微米之間。於本實施例中，發光二極 體晶片211之厚度為1〇〇微米。 因此’除了透過使用固晶絕緣膠層23而可達到耐高壓 之目的外’更可透過增加發光二極體晶片211之厚度，即增 加發光二極體211基板之厚度’而可有效預防電弧導通之意 外，以確保抑制漏電危險。 綜上所述，本創作之交流發光二極體封裝結構，藉由 特殊之固晶絕緣膠層，而可通過國家安規之耐高壓測試。 同時，因固晶絕緣膠層具有良好知覺原性，故可阻絕外界 高壓’並提升使用者之操作安全性。此外，本創作之固晶 M374648 絕緣膠層適用溫度範圍廣泛且品質 0口貝德疋性佳，故可維持六 流發光二極體封裝結構之產品穩定性。 、父 而舉例而已，本創作所 圍所述為準，而非僅限 上述實施例僅係為了方便說明 主張之權利範圍自應以申請專利範 於上述實施例。 【圖式簡單說明】 圖1係習知發光二極體封裝結構之示意圖。 圖2係本創作一較佳實施例之交流發光二極體封裝結搆么 示意圖。 【主要元件符號說明】 10, 20 102, 202 12, 22 21 231 承載架 101，201正極連接端 負極連接端 發光二極體晶片 金屬導線 13 液態導電膠 交流發光二極體模組23 固晶絕緣膠層 固晶區塊 24 散熱塊
Claims (1)
- M374648 六、申請專利範圍： 1. 一種交流發光二極體封裝結構，包括： 一承載架，其包括一正極連接端、及一負極連接端； 一交流發光二極體模組，係設於該承載架上，且該交 流發光二極體模組係與該正極連接端及該負極連接端電性 連接，以及 一固晶絕緣滕層，係設於該交流發光二極體模組及該 承載架之間。 2. 如申請專利範圍第〗項所述之交流發光二極體封裝 結構，其中該交流發光二極體模組係包括複數發光二極體 晶片’且該等發光二極體晶片係相互串聯。 3. 如申請專利範圍第1項所述之交流發光二極體封裝 結構，其中該固晶絕緣膠層係包括複數固晶區塊，且每一 該固晶區塊係對應於一發光二極體晶片。 4. 如申請專利範圍第1項所述之交流發光二極體封裝 結構’其中該交流發光二極體模組係透過金屬導線與該正 極連接端及該負極連接端電性連接。 5 ·如申請專利範圍第2項所述之交流發光二極體封裝 結構’其中該等發光二極體晶片係透過金屬導線相互串聯。 6.如申請專利範圍第1項所述之交流發光二極體封裝 結構’其更包括一散熱塊，係設於該交流發光二極體模組 下方’且使該固晶絕緣膠層位於該散熱塊及該交流發光二 極體模組之間。 9 結才/· *申請專㈣圍第2項所述之交流發光二極體封裝 其中該等發光二極體晶片之厚度係為100〜200微米。 妹 如申明專利範圍第1項所述之交流發光二極體封裝 、’。構，其中該固晶絕緣膠層之厚度係為50〜120微米。 姓9.如申凊專利範圍第1項所述之交流發光二極體封裝 、’·。構，其中該固晶絕緣膠層係為一固晶絕緣矽膠層。 士 10.如申請專利範圍第1項所述之交流發光二極體封農 、-。構’其中該固晶絕緣膠層之硬度為5〇〜6〇 Sh〇re D，彈性 杈量為170〜190 N/mm2，密度為丨.0〜丨2 g/cm3。 11. 如申請專利範圍第丨項所述之交流發光二極體封裝 結構，其中該固晶絕緣膠層之透光率為】5〜3%。 12. 如申請專利範圍第丨項所述之交流發光二極體封裝 結構’其中該固晶絕緣膠層之線膨脹係數為2〇〇〜23〇 ppm。 13. 如申請專利範圍第1項所述之交流發光二極體封裝 結構’其中該固晶絕緣膠層之導熱率為〇丨5〜〇 22 W/m. JC。 14·如申請專利範圍第1項所述之交流發光二極體封裝 結構’其中該固晶絕緣膠層之絕緣破壞強度為23〜28 kV/mm。
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| Application Number | Priority Date | Filing Date | Title |
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| TW098219015U TWM374648U (en) | 2009-10-15 | 2009-10-15 | AC LED packaging structure |
| US12/801,704 US20110089443A1 (en) | 2009-10-15 | 2010-06-22 | Packaging Structure of AC light-emitting diodes |
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| TW098219015U TWM374648U (en) | 2009-10-15 | 2009-10-15 | AC LED packaging structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI448646B (zh) * | 2011-05-13 | 2014-08-11 | Brightek Optoelectronic Co Ltd | 燈具散熱結構製造方法及燈具組件製造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD753612S1 (en) * | 2012-09-07 | 2016-04-12 | Cree, Inc. | Light emitter device |
| JP2015070170A (ja) * | 2013-09-30 | 2015-04-13 | 豊田合成株式会社 | 発光装置及びその製造方法 |
| US9633883B2 (en) * | 2015-03-20 | 2017-04-25 | Rohinni, LLC | Apparatus for transfer of semiconductor devices |
| US10141215B2 (en) | 2016-11-03 | 2018-11-27 | Rohinni, LLC | Compliant needle for direct transfer of semiconductor devices |
| US10471545B2 (en) | 2016-11-23 | 2019-11-12 | Rohinni, LLC | Top-side laser for direct transfer of semiconductor devices |
| US10504767B2 (en) | 2016-11-23 | 2019-12-10 | Rohinni, LLC | Direct transfer apparatus for a pattern array of semiconductor device die |
| US10062588B2 (en) | 2017-01-18 | 2018-08-28 | Rohinni, LLC | Flexible support substrate for transfer of semiconductor devices |
| US10410905B1 (en) | 2018-05-12 | 2019-09-10 | Rohinni, LLC | Method and apparatus for direct transfer of multiple semiconductor devices |
| US11094571B2 (en) | 2018-09-28 | 2021-08-17 | Rohinni, LLC | Apparatus to increase transferspeed of semiconductor devices with micro-adjustment |
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| US20070008721A1 (en) * | 2005-07-08 | 2007-01-11 | Baycom Opto-Electronics Technology Co., Ltd. | Light string having alternating current light-emitting diodes |
| EP3489572A1 (en) * | 2006-08-29 | 2019-05-29 | Toshiba Lighting & Technology Corporation | Illumination apparatus having a plurality of semiconductor light-emitting devices |
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2009
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI448646B (zh) * | 2011-05-13 | 2014-08-11 | Brightek Optoelectronic Co Ltd | 燈具散熱結構製造方法及燈具組件製造方法 |
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