TWM301400U - Apparatus to confine plasma and to enhance flow conductance - Google Patents

Apparatus to confine plasma and to enhance flow conductance

Info

Publication number
TWM301400U
TWM301400U TW095208718U TW95208718U TWM301400U TW M301400 U TWM301400 U TW M301400U TW 095208718 U TW095208718 U TW 095208718U TW 95208718 U TW95208718 U TW 95208718U TW M301400 U TWM301400 U TW M301400U
Authority
TW
Taiwan
Prior art keywords
flow conductance
enhance flow
confine plasma
confine
plasma
Prior art date
Application number
TW095208718U
Other languages
English (en)
Inventor
Kallol Bera
Daniel Hoffman
Yan Ye
Michael Kutney
Douglas A Buchberger
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TWM301400U publication Critical patent/TWM301400U/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
TW095208718U 2005-01-28 2006-01-24 Apparatus to confine plasma and to enhance flow conductance TWM301400U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/046,135 US20060172542A1 (en) 2005-01-28 2005-01-28 Method and apparatus to confine plasma and to enhance flow conductance

Publications (1)

Publication Number Publication Date
TWM301400U true TWM301400U (en) 2006-11-21

Family

ID=35929769

Family Applications (2)

Application Number Title Priority Date Filing Date
TW095102667A TWI333225B (en) 2005-01-28 2006-01-24 Method and apparatus to confine plasma and to enhance flow conductance
TW095208718U TWM301400U (en) 2005-01-28 2006-01-24 Apparatus to confine plasma and to enhance flow conductance

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW095102667A TWI333225B (en) 2005-01-28 2006-01-24 Method and apparatus to confine plasma and to enhance flow conductance

Country Status (8)

Country Link
US (3) US20060172542A1 (zh)
EP (1) EP1686611B9 (zh)
JP (2) JP4713352B2 (zh)
KR (2) KR100900595B1 (zh)
CN (2) CN1812681B (zh)
DE (1) DE602006002282D1 (zh)
SG (1) SG124401A1 (zh)
TW (2) TWI333225B (zh)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060226003A1 (en) * 2003-01-22 2006-10-12 John Mize Apparatus and methods for ionized deposition of a film or thin layer
US7595096B2 (en) * 2003-07-30 2009-09-29 Oc Oerlikon Balzers Ag Method of manufacturing vacuum plasma treated workpieces
US7430986B2 (en) * 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
US9659758B2 (en) 2005-03-22 2017-05-23 Honeywell International Inc. Coils utilized in vapor deposition applications and methods of production
US20060278520A1 (en) * 2005-06-13 2006-12-14 Lee Eal H Use of DC magnetron sputtering systems
US8157951B2 (en) * 2005-10-11 2012-04-17 Applied Materials, Inc. Capacitively coupled plasma reactor having very agile wafer temperature control
US8034180B2 (en) * 2005-10-11 2011-10-11 Applied Materials, Inc. Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor
CN101150909B (zh) * 2006-09-22 2010-05-12 中微半导体设备(上海)有限公司 等离子体约束装置
US20080110567A1 (en) * 2006-11-15 2008-05-15 Miller Matthew L Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution
US7780866B2 (en) * 2006-11-15 2010-08-24 Applied Materials, Inc. Method of plasma confinement for enhancing magnetic control of plasma radial distribution
US7968469B2 (en) * 2007-01-30 2011-06-28 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity
US8647438B2 (en) * 2007-04-27 2014-02-11 Applied Materials, Inc. Annular baffle
US20090178763A1 (en) * 2008-01-10 2009-07-16 Applied Materials, Inc. Showerhead insulator and etch chamber liner
US20090194414A1 (en) * 2008-01-31 2009-08-06 Nolander Ira G Modified sputtering target and deposition components, methods of production and uses thereof
TWI516175B (zh) * 2008-02-08 2016-01-01 蘭姆研究公司 在電漿處理腔室中穩定壓力的方法及其程式儲存媒體
WO2010036707A2 (en) * 2008-09-26 2010-04-01 Lam Research Corporation Adjustable thermal contact between an electrostatic chuck and a hot edge ring by clocking a coupling ring
JP5350043B2 (ja) * 2009-03-31 2013-11-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US8597462B2 (en) * 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
WO2012166265A2 (en) 2011-05-31 2012-12-06 Applied Materials, Inc. Apparatus and methods for dry etch with edge, side and back protection
US10249470B2 (en) 2012-07-20 2019-04-02 Applied Materials, Inc. Symmetrical inductively coupled plasma source with coaxial RF feed and coaxial shielding
US9896769B2 (en) * 2012-07-20 2018-02-20 Applied Materials, Inc. Inductively coupled plasma source with multiple dielectric windows and window-supporting structure
US9928987B2 (en) 2012-07-20 2018-03-27 Applied Materials, Inc. Inductively coupled plasma source with symmetrical RF feed
US9082590B2 (en) 2012-07-20 2015-07-14 Applied Materials, Inc. Symmetrical inductively coupled plasma source with side RF feeds and RF distribution plates
US10170279B2 (en) 2012-07-20 2019-01-01 Applied Materials, Inc. Multiple coil inductively coupled plasma source with offset frequencies and double-walled shielding
US9449794B2 (en) 2012-07-20 2016-09-20 Applied Materials, Inc. Symmetrical inductively coupled plasma source with side RF feeds and spiral coil antenna
US10300450B2 (en) * 2012-09-14 2019-05-28 Carterra, Inc. Method and device for depositing a substance on a submerged surface
WO2014149200A1 (en) 2013-03-15 2014-09-25 Applied Materials, Inc. Plasma reactor with highly symmetrical four-fold gas injection
TWI717610B (zh) * 2013-08-16 2021-02-01 美商應用材料股份有限公司 用於高溫低壓環境中的延長的電容性耦合的電漿源
US10163610B2 (en) 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
US11183373B2 (en) 2017-10-11 2021-11-23 Honeywell International Inc. Multi-patterned sputter traps and methods of making
CN112951695B (zh) * 2019-11-26 2023-09-29 中微半导体设备(上海)股份有限公司 冷却管组件、冷却装置和等离子体处理设备
CN113130284B (zh) * 2019-12-31 2023-01-24 中微半导体设备(上海)股份有限公司 等离子体刻蚀设备
US20220084845A1 (en) * 2020-09-17 2022-03-17 Applied Materials, Inc. High conductance process kit

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6269620A (ja) * 1985-09-24 1987-03-30 Anelva Corp プラズマ処理装置
JP3343629B2 (ja) * 1993-11-30 2002-11-11 アネルバ株式会社 プラズマ処理装置
JP3257741B2 (ja) * 1994-03-03 2002-02-18 東京エレクトロン株式会社 プラズマエッチング装置及び方法
US5685914A (en) * 1994-04-05 1997-11-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
US5639334A (en) * 1995-03-07 1997-06-17 International Business Machines Corporation Uniform gas flow arrangements
JPH08250470A (ja) * 1995-03-09 1996-09-27 Hitachi Ltd プラズマ処理方法及び処理装置
TW323387B (zh) * 1995-06-07 1997-12-21 Tokyo Electron Co Ltd
US5534751A (en) * 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US6048403A (en) * 1998-04-01 2000-04-11 Applied Materials, Inc. Multi-ledge substrate support for a thermal processing chamber
KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
US6525462B1 (en) * 1999-03-24 2003-02-25 Micron Technology, Inc. Conductive spacer for field emission displays and method
US6257168B1 (en) * 1999-06-30 2001-07-10 Lam Research Corporation Elevated stationary uniformity ring design
US6528751B1 (en) * 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US6853141B2 (en) * 2002-05-22 2005-02-08 Daniel J. Hoffman Capacitively coupled plasma reactor with magnetic plasma control
US7141757B2 (en) * 2000-03-17 2006-11-28 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent
US6900596B2 (en) 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
JP3810248B2 (ja) * 2000-03-27 2006-08-16 信越化学工業株式会社 プラズマ処理装置用シリコンリング
US6872281B1 (en) * 2000-09-28 2005-03-29 Lam Research Corporation Chamber configuration for confining a plasma
US6602381B1 (en) * 2001-04-30 2003-08-05 Lam Research Corporation Plasma confinement by use of preferred RF return path
US20030029859A1 (en) * 2001-08-08 2003-02-13 Applied Materials, Inc. Lamphead for a rapid thermal processing chamber
US6652713B2 (en) 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor
US6744212B2 (en) * 2002-02-14 2004-06-01 Lam Research Corporation Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions
US7252738B2 (en) * 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
US7972467B2 (en) 2003-04-17 2011-07-05 Applied Materials Inc. Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor
US20040261712A1 (en) * 2003-04-25 2004-12-30 Daisuke Hayashi Plasma processing apparatus
KR100578129B1 (ko) * 2003-09-19 2006-05-10 삼성전자주식회사 플라즈마 식각 장치
US7001482B2 (en) * 2003-11-12 2006-02-21 Tokyo Electron Limited Method and apparatus for improved focus ring

Also Published As

Publication number Publication date
US7618516B2 (en) 2009-11-17
CN101008072B (zh) 2011-05-18
EP1686611B1 (en) 2008-08-20
US20060193102A1 (en) 2006-08-31
KR100900595B1 (ko) 2009-06-02
SG124401A1 (en) 2006-08-30
US20070023145A1 (en) 2007-02-01
TW200627501A (en) 2006-08-01
JP3123883U (ja) 2006-07-27
CN1812681A (zh) 2006-08-02
KR20060087432A (ko) 2006-08-02
EP1686611B9 (en) 2009-08-05
US7674353B2 (en) 2010-03-09
JP4713352B2 (ja) 2011-06-29
DE602006002282D1 (de) 2008-10-02
US20060172542A1 (en) 2006-08-03
JP2006270054A (ja) 2006-10-05
EP1686611A1 (en) 2006-08-02
CN1812681B (zh) 2012-02-01
TWI333225B (en) 2010-11-11
KR20060087474A (ko) 2006-08-02
CN101008072A (zh) 2007-08-01

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Legal Events

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MK4K Expiration of patent term of a granted utility model