CN101150909B - 等离子体约束装置 - Google Patents
等离子体约束装置 Download PDFInfo
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- CN101150909B CN101150909B CN200610116449A CN200610116449A CN101150909B CN 101150909 B CN101150909 B CN 101150909B CN 200610116449 A CN200610116449 A CN 200610116449A CN 200610116449 A CN200610116449 A CN 200610116449A CN 101150909 B CN101150909 B CN 101150909B
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Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200610116449A CN101150909B (zh) | 2006-09-22 | 2006-09-22 | 等离子体约束装置 |
US11/546,041 US8608851B2 (en) | 2005-10-14 | 2006-10-10 | Plasma confinement apparatus, and method for confining a plasma |
JP2006279999A JP4901412B2 (ja) | 2005-10-14 | 2006-10-13 | プラズマ閉込め装置及びプラズマの閉込め方法 |
KR1020060099701A KR100875796B1 (ko) | 2005-10-14 | 2006-10-13 | 플라즈마 구속 장치 |
US14/108,241 US10187965B2 (en) | 2005-10-14 | 2013-12-16 | Plasma confinement apparatus, and method for confining a plasma |
Applications Claiming Priority (1)
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CN200610116449A CN101150909B (zh) | 2006-09-22 | 2006-09-22 | 等离子体约束装置 |
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CN101150909A CN101150909A (zh) | 2008-03-26 |
CN101150909B true CN101150909B (zh) | 2010-05-12 |
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CN200610116449A Active CN101150909B (zh) | 2005-10-14 | 2006-09-22 | 等离子体约束装置 |
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Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5350043B2 (ja) * | 2009-03-31 | 2013-11-27 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
SG10201405042QA (en) * | 2009-08-31 | 2014-10-30 | Lam Res Corp | A multi-peripheral ring arrangement for performing plasma confinement |
CN103165368B (zh) * | 2011-12-16 | 2016-02-03 | 中微半导体设备(上海)有限公司 | 一种温度可调的等离子体约束装置 |
CN103171186B (zh) * | 2011-12-20 | 2015-06-10 | 中微半导体设备(上海)有限公司 | 一种用于等离子反应室的层叠型组件及其制造方法 |
CN103177925B (zh) * | 2011-12-23 | 2015-08-26 | 中微半导体设备(上海)有限公司 | 一种用于等离子体处理装置的可调节约束环 |
CN103187234B (zh) * | 2011-12-30 | 2016-03-16 | 中微半导体设备(上海)有限公司 | 一种用于等离子体处理装置的可调节约束装置 |
CN102820197B (zh) * | 2012-08-31 | 2016-03-09 | 中微半导体设备(上海)有限公司 | 一种等离子处理系统 |
CN103811263B (zh) * | 2014-02-25 | 2016-06-01 | 清华大学 | 等离子体约束装置及具有其的等离子体处理装置 |
CN106920731B (zh) * | 2015-12-28 | 2019-11-08 | 中微半导体设备(上海)股份有限公司 | 一种限制等离子体泄露的接地环以及反应腔 |
KR101931324B1 (ko) * | 2017-09-14 | 2018-12-20 | (주)나노텍 | 셀프 플라즈마 챔버의 오염 억제 장치 |
CN109246919B (zh) * | 2018-10-24 | 2023-09-12 | 江苏菲沃泰纳米科技股份有限公司 | 一种可变形电极及其应用设备、使用方法 |
CN112447474B (zh) * | 2019-09-04 | 2022-11-04 | 中微半导体设备(上海)股份有限公司 | 一种具有可移动环的等离子体处理器 |
CN112687510B (zh) * | 2019-10-18 | 2023-10-31 | 中微半导体设备(上海)股份有限公司 | 一种防止约束环发生电弧损伤的等离子体处理器和方法 |
CN112928007B (zh) * | 2019-12-06 | 2023-09-12 | 中微半导体设备(上海)股份有限公司 | 等离子体处理设备及用于等离子体处理设备的下电极组件 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1148105A (zh) * | 1995-07-10 | 1997-04-23 | 兰姆研究有限公司 | 利用等离子体约束装置的等离子体蚀刻装置 |
US6051100A (en) * | 1997-10-24 | 2000-04-18 | International Business Machines Corporation | High conductance plasma containment structure |
US6178918B1 (en) * | 1995-07-10 | 2001-01-30 | Applied Materials, Inc. | Plasma enhanced chemical processing reactor |
CN1405849A (zh) * | 2001-08-08 | 2003-03-26 | 蓝姆研究公司 | 应用于约束等离子体反应室的半导体双镶嵌蚀刻制作过程 |
CN1812681A (zh) * | 2005-01-28 | 2006-08-02 | 应用材料公司 | 限界等离子体和增强流动导通性的方法和装置 |
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2006
- 2006-09-22 CN CN200610116449A patent/CN101150909B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1148105A (zh) * | 1995-07-10 | 1997-04-23 | 兰姆研究有限公司 | 利用等离子体约束装置的等离子体蚀刻装置 |
US6178918B1 (en) * | 1995-07-10 | 2001-01-30 | Applied Materials, Inc. | Plasma enhanced chemical processing reactor |
US6051100A (en) * | 1997-10-24 | 2000-04-18 | International Business Machines Corporation | High conductance plasma containment structure |
CN1405849A (zh) * | 2001-08-08 | 2003-03-26 | 蓝姆研究公司 | 应用于约束等离子体反应室的半导体双镶嵌蚀刻制作过程 |
CN1812681A (zh) * | 2005-01-28 | 2006-08-02 | 应用材料公司 | 限界等离子体和增强流动导通性的方法和装置 |
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CN101150909A (zh) | 2008-03-26 |
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Denomination of invention: Temperature adjustable plasma restriction device Effective date of registration: 20110725 Granted publication date: 20100512 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
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Date of cancellation: 20170809 Granted publication date: 20100512 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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