TW200627501A - Method and apparatus to confine plasma and to enhance flow conductance - Google Patents

Method and apparatus to confine plasma and to enhance flow conductance

Info

Publication number
TW200627501A
TW200627501A TW095102667A TW95102667A TW200627501A TW 200627501 A TW200627501 A TW 200627501A TW 095102667 A TW095102667 A TW 095102667A TW 95102667 A TW95102667 A TW 95102667A TW 200627501 A TW200627501 A TW 200627501A
Authority
TW
Taiwan
Prior art keywords
plasma
top electrode
confinement
voltage
substrate
Prior art date
Application number
TW095102667A
Other languages
Chinese (zh)
Other versions
TWI333225B (en
Inventor
Kallol Bera
Daniel Hoffman
Yan Ye
Michael Kutney
Douglas A Buchberger
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200627501A publication Critical patent/TW200627501A/en
Application granted granted Critical
Publication of TWI333225B publication Critical patent/TWI333225B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

The embodiments of the present invention generally relate to a method and an apparatus to confine a plasma within a processing region in a plasma processing chamber. The apparatus may include an annular ring with a gap distance with the chamber wall at between about 0.8 inch to about 1.5 inch. In addition to the annular plasma confinement ring, the plasma can also be confined by reducing a voltage supplied to the top electrode by a voltage ratio during plasma processing and supplying the remaining voltage supplied to the top electrode at a negative phase at the substrate support and the substrate, if the substrate is present during processing. The voltage ratio can be adjusted by changing the impedances of the substrate support and the dielectric seal surrounding the top electrode. Lowering top electrode voltage by a voltage ratio and supplying the remaining voltage supplied to the top electrode at a negative phase at the substrate support reduce the amount of plasma got attracted to the grounded chamber walls and thus improves plasma confinement. This method of plasma confinement is called impedance confinement. Plasma confinement can be improved by using either the described annular ring, the impedance confinement scheme or a combination of both.
TW095102667A 2005-01-28 2006-01-24 Method and apparatus to confine plasma and to enhance flow conductance TWI333225B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/046,135 US20060172542A1 (en) 2005-01-28 2005-01-28 Method and apparatus to confine plasma and to enhance flow conductance

Publications (2)

Publication Number Publication Date
TW200627501A true TW200627501A (en) 2006-08-01
TWI333225B TWI333225B (en) 2010-11-11

Family

ID=35929769

Family Applications (2)

Application Number Title Priority Date Filing Date
TW095102667A TWI333225B (en) 2005-01-28 2006-01-24 Method and apparatus to confine plasma and to enhance flow conductance
TW095208718U TWM301400U (en) 2005-01-28 2006-01-24 Apparatus to confine plasma and to enhance flow conductance

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW095208718U TWM301400U (en) 2005-01-28 2006-01-24 Apparatus to confine plasma and to enhance flow conductance

Country Status (8)

Country Link
US (3) US20060172542A1 (en)
EP (1) EP1686611B9 (en)
JP (2) JP4713352B2 (en)
KR (2) KR100900595B1 (en)
CN (2) CN1812681B (en)
DE (1) DE602006002282D1 (en)
SG (1) SG124401A1 (en)
TW (2) TWI333225B (en)

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TWI735351B (en) * 2019-11-26 2021-08-01 大陸商中微半導體設備（上海）股份有限公司 Cooling pipe assembly, cooling device and plasma processing equipment with function of discharging static electricity

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US8157951B2 (en) * 2005-10-11 2012-04-17 Applied Materials, Inc. Capacitively coupled plasma reactor having very agile wafer temperature control
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CN101150909B (en) * 2006-09-22 2010-05-12 中微半导体设备(上海)有限公司 Plasm restraint device
US20080110567A1 (en) * 2006-11-15 2008-05-15 Miller Matthew L Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution
US7780866B2 (en) * 2006-11-15 2010-08-24 Applied Materials, Inc. Method of plasma confinement for enhancing magnetic control of plasma radial distribution
US7968469B2 (en) * 2007-01-30 2011-06-28 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity
CN101663421A (en) * 2007-04-27 2010-03-03 应用材料股份有限公司 Annular baffle
US20090178763A1 (en) * 2008-01-10 2009-07-16 Applied Materials, Inc. Showerhead insulator and etch chamber liner
US20090194414A1 (en) * 2008-01-31 2009-08-06 Nolander Ira G Modified sputtering target and deposition components, methods of production and uses thereof
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JP5350043B2 (en) * 2009-03-31 2013-11-27 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
US8597462B2 (en) * 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
WO2012166265A2 (en) 2011-05-31 2012-12-06 Applied Materials, Inc. Apparatus and methods for dry etch with edge, side and back protection
US9449794B2 (en) 2012-07-20 2016-09-20 Applied Materials, Inc. Symmetrical inductively coupled plasma source with side RF feeds and spiral coil antenna
US9928987B2 (en) 2012-07-20 2018-03-27 Applied Materials, Inc. Inductively coupled plasma source with symmetrical RF feed
US9745663B2 (en) 2012-07-20 2017-08-29 Applied Materials, Inc. Symmetrical inductively coupled plasma source with symmetrical flow chamber
US9082590B2 (en) 2012-07-20 2015-07-14 Applied Materials, Inc. Symmetrical inductively coupled plasma source with side RF feeds and RF distribution plates
US10170279B2 (en) 2012-07-20 2019-01-01 Applied Materials, Inc. Multiple coil inductively coupled plasma source with offset frequencies and double-walled shielding
US10249470B2 (en) 2012-07-20 2019-04-02 Applied Materials, Inc. Symmetrical inductively coupled plasma source with coaxial RF feed and coaxial shielding
US10300450B2 (en) * 2012-09-14 2019-05-28 Carterra, Inc. Method and device for depositing a substance on a submerged surface
CN107221487B (en) 2013-03-15 2019-06-28 应用材料公司 Plasma reactor with the injection of high degree of symmetry quadruple formula gas
US9355819B2 (en) * 2013-08-16 2016-05-31 Applied Materials, Inc. Elongated capacitively coupled plasma source for high temperature low pressure environments
US10163610B2 (en) 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
US11183373B2 (en) 2017-10-11 2021-11-23 Honeywell International Inc. Multi-patterned sputter traps and methods of making
CN113130284B (en) * 2019-12-31 2023-01-24 中微半导体设备(上海)股份有限公司 Plasma etching equipment
US20220084845A1 (en) * 2020-09-17 2022-03-17 Applied Materials, Inc. High conductance process kit

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI735351B (en) * 2019-11-26 2021-08-01 大陸商中微半導體設備（上海）股份有限公司 Cooling pipe assembly, cooling device and plasma processing equipment with function of discharging static electricity

Also Published As

Publication number Publication date
JP3123883U (en) 2006-07-27
CN101008072B (en) 2011-05-18
EP1686611B9 (en) 2009-08-05
CN1812681A (en) 2006-08-02
US20060172542A1 (en) 2006-08-03
JP2006270054A (en) 2006-10-05
US7674353B2 (en) 2010-03-09
DE602006002282D1 (en) 2008-10-02
US20060193102A1 (en) 2006-08-31
KR20060087474A (en) 2006-08-02
US7618516B2 (en) 2009-11-17
TWM301400U (en) 2006-11-21
CN1812681B (en) 2012-02-01
EP1686611B1 (en) 2008-08-20
KR20060087432A (en) 2006-08-02
EP1686611A1 (en) 2006-08-02
KR100900595B1 (en) 2009-06-02
SG124401A1 (en) 2006-08-30
CN101008072A (en) 2007-08-01
JP4713352B2 (en) 2011-06-29
TWI333225B (en) 2010-11-11
US20070023145A1 (en) 2007-02-01

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