TW200627501A - Method and apparatus to confine plasma and to enhance flow conductance - Google Patents
Method and apparatus to confine plasma and to enhance flow conductanceInfo
- Publication number
- TW200627501A TW200627501A TW095102667A TW95102667A TW200627501A TW 200627501 A TW200627501 A TW 200627501A TW 095102667 A TW095102667 A TW 095102667A TW 95102667 A TW95102667 A TW 95102667A TW 200627501 A TW200627501 A TW 200627501A
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- top electrode
- confinement
- voltage
- substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/046,135 US20060172542A1 (en) | 2005-01-28 | 2005-01-28 | Method and apparatus to confine plasma and to enhance flow conductance |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200627501A true TW200627501A (en) | 2006-08-01 |
TWI333225B TWI333225B (en) | 2010-11-11 |
Family
ID=35929769
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095102667A TWI333225B (en) | 2005-01-28 | 2006-01-24 | Method and apparatus to confine plasma and to enhance flow conductance |
TW095208718U TWM301400U (en) | 2005-01-28 | 2006-01-24 | Apparatus to confine plasma and to enhance flow conductance |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095208718U TWM301400U (en) | 2005-01-28 | 2006-01-24 | Apparatus to confine plasma and to enhance flow conductance |
Country Status (8)
Country | Link |
---|---|
US (3) | US20060172542A1 (zh) |
EP (1) | EP1686611B9 (zh) |
JP (2) | JP4713352B2 (zh) |
KR (2) | KR100900595B1 (zh) |
CN (2) | CN1812681B (zh) |
DE (1) | DE602006002282D1 (zh) |
SG (1) | SG124401A1 (zh) |
TW (2) | TWI333225B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI735351B (zh) * | 2019-11-26 | 2021-08-01 | 大陸商中微半導體設備(上海)股份有限公司 | 具有釋放靜電功能的冷卻管組件、冷卻裝置和電漿處理設備 |
Families Citing this family (32)
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US20060226003A1 (en) * | 2003-01-22 | 2006-10-12 | John Mize | Apparatus and methods for ionized deposition of a film or thin layer |
US7595096B2 (en) * | 2003-07-30 | 2009-09-29 | Oc Oerlikon Balzers Ag | Method of manufacturing vacuum plasma treated workpieces |
US7430986B2 (en) | 2005-03-18 | 2008-10-07 | Lam Research Corporation | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
US9659758B2 (en) | 2005-03-22 | 2017-05-23 | Honeywell International Inc. | Coils utilized in vapor deposition applications and methods of production |
US20060278520A1 (en) * | 2005-06-13 | 2006-12-14 | Lee Eal H | Use of DC magnetron sputtering systems |
US8157951B2 (en) * | 2005-10-11 | 2012-04-17 | Applied Materials, Inc. | Capacitively coupled plasma reactor having very agile wafer temperature control |
US8034180B2 (en) * | 2005-10-11 | 2011-10-11 | Applied Materials, Inc. | Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor |
CN101150909B (zh) * | 2006-09-22 | 2010-05-12 | 中微半导体设备(上海)有限公司 | 等离子体约束装置 |
US7780866B2 (en) * | 2006-11-15 | 2010-08-24 | Applied Materials, Inc. | Method of plasma confinement for enhancing magnetic control of plasma radial distribution |
US20080110567A1 (en) * | 2006-11-15 | 2008-05-15 | Miller Matthew L | Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution |
US7968469B2 (en) * | 2007-01-30 | 2011-06-28 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity |
JP6097471B2 (ja) * | 2007-04-27 | 2017-03-15 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 環状のバッフル |
US20090178763A1 (en) | 2008-01-10 | 2009-07-16 | Applied Materials, Inc. | Showerhead insulator and etch chamber liner |
US20090194414A1 (en) * | 2008-01-31 | 2009-08-06 | Nolander Ira G | Modified sputtering target and deposition components, methods of production and uses thereof |
TWI516175B (zh) * | 2008-02-08 | 2016-01-01 | 蘭姆研究公司 | 在電漿處理腔室中穩定壓力的方法及其程式儲存媒體 |
JP5635001B2 (ja) * | 2008-09-26 | 2014-12-03 | ラム リサーチ コーポレーションLam Research Corporation | 結合リングをクロック回転させることによって調整可能な静電チャックとホットエッジリングとの間の熱的接触 |
JP5350043B2 (ja) * | 2009-03-31 | 2013-11-27 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US8597462B2 (en) * | 2010-05-21 | 2013-12-03 | Lam Research Corporation | Movable chamber liner plasma confinement screen combination for plasma processing apparatuses |
KR101963862B1 (ko) | 2011-05-31 | 2019-03-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 에지, 측면 및 후면 보호를 갖는 건식 식각을 위한 장치 및 방법들 |
US9449794B2 (en) | 2012-07-20 | 2016-09-20 | Applied Materials, Inc. | Symmetrical inductively coupled plasma source with side RF feeds and spiral coil antenna |
US10249470B2 (en) | 2012-07-20 | 2019-04-02 | Applied Materials, Inc. | Symmetrical inductively coupled plasma source with coaxial RF feed and coaxial shielding |
US9745663B2 (en) | 2012-07-20 | 2017-08-29 | Applied Materials, Inc. | Symmetrical inductively coupled plasma source with symmetrical flow chamber |
US9082590B2 (en) | 2012-07-20 | 2015-07-14 | Applied Materials, Inc. | Symmetrical inductively coupled plasma source with side RF feeds and RF distribution plates |
US10170279B2 (en) | 2012-07-20 | 2019-01-01 | Applied Materials, Inc. | Multiple coil inductively coupled plasma source with offset frequencies and double-walled shielding |
US9928987B2 (en) | 2012-07-20 | 2018-03-27 | Applied Materials, Inc. | Inductively coupled plasma source with symmetrical RF feed |
US10300450B2 (en) * | 2012-09-14 | 2019-05-28 | Carterra, Inc. | Method and device for depositing a substance on a submerged surface |
KR102130061B1 (ko) | 2013-03-15 | 2020-07-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 매우 대칭적인 4-폴드 가스 주입부를 갖는 플라즈마 반응기 |
KR102176329B1 (ko) * | 2013-08-16 | 2020-11-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 고온 저압 환경들을 위한 세장형 용량 결합 플라즈마 소스 |
US10163610B2 (en) | 2015-07-13 | 2018-12-25 | Lam Research Corporation | Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation |
US11183373B2 (en) | 2017-10-11 | 2021-11-23 | Honeywell International Inc. | Multi-patterned sputter traps and methods of making |
CN113130284B (zh) * | 2019-12-31 | 2023-01-24 | 中微半导体设备(上海)股份有限公司 | 等离子体刻蚀设备 |
US20220084845A1 (en) * | 2020-09-17 | 2022-03-17 | Applied Materials, Inc. | High conductance process kit |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6269620A (ja) * | 1985-09-24 | 1987-03-30 | Anelva Corp | プラズマ処理装置 |
JP3343629B2 (ja) * | 1993-11-30 | 2002-11-11 | アネルバ株式会社 | プラズマ処理装置 |
JP3257741B2 (ja) * | 1994-03-03 | 2002-02-18 | 東京エレクトロン株式会社 | プラズマエッチング装置及び方法 |
US5685914A (en) * | 1994-04-05 | 1997-11-11 | Applied Materials, Inc. | Focus ring for semiconductor wafer processing in a plasma reactor |
US5639334A (en) * | 1995-03-07 | 1997-06-17 | International Business Machines Corporation | Uniform gas flow arrangements |
JPH08250470A (ja) * | 1995-03-09 | 1996-09-27 | Hitachi Ltd | プラズマ処理方法及び処理装置 |
TW434745B (en) * | 1995-06-07 | 2001-05-16 | Tokyo Electron Ltd | Plasma processing apparatus |
US5534751A (en) * | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
US6284093B1 (en) * | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
US6048403A (en) * | 1998-04-01 | 2000-04-11 | Applied Materials, Inc. | Multi-ledge substrate support for a thermal processing chamber |
KR100292410B1 (ko) * | 1998-09-23 | 2001-06-01 | 윤종용 | 불순물 오염이 억제된 반도체 제조용 반응 챔버 |
US6159299A (en) * | 1999-02-09 | 2000-12-12 | Applied Materials, Inc. | Wafer pedestal with a purge ring |
US6525462B1 (en) * | 1999-03-24 | 2003-02-25 | Micron Technology, Inc. | Conductive spacer for field emission displays and method |
US6257168B1 (en) * | 1999-06-30 | 2001-07-10 | Lam Research Corporation | Elevated stationary uniformity ring design |
US6528751B1 (en) * | 2000-03-17 | 2003-03-04 | Applied Materials, Inc. | Plasma reactor with overhead RF electrode tuned to the plasma |
US6900596B2 (en) | 2002-07-09 | 2005-05-31 | Applied Materials, Inc. | Capacitively coupled plasma reactor with uniform radial distribution of plasma |
US6853141B2 (en) * | 2002-05-22 | 2005-02-08 | Daniel J. Hoffman | Capacitively coupled plasma reactor with magnetic plasma control |
US7141757B2 (en) * | 2000-03-17 | 2006-11-28 | Applied Materials, Inc. | Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent |
JP3810248B2 (ja) * | 2000-03-27 | 2006-08-16 | 信越化学工業株式会社 | プラズマ処理装置用シリコンリング |
US6872281B1 (en) * | 2000-09-28 | 2005-03-29 | Lam Research Corporation | Chamber configuration for confining a plasma |
US6602381B1 (en) * | 2001-04-30 | 2003-08-05 | Lam Research Corporation | Plasma confinement by use of preferred RF return path |
US20030029859A1 (en) * | 2001-08-08 | 2003-02-13 | Applied Materials, Inc. | Lamphead for a rapid thermal processing chamber |
US6652713B2 (en) | 2001-08-09 | 2003-11-25 | Applied Materials, Inc. | Pedestal with integral shield |
US6706138B2 (en) * | 2001-08-16 | 2004-03-16 | Applied Materials Inc. | Adjustable dual frequency voltage dividing plasma reactor |
US6744212B2 (en) * | 2002-02-14 | 2004-06-01 | Lam Research Corporation | Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions |
US7252738B2 (en) * | 2002-09-20 | 2007-08-07 | Lam Research Corporation | Apparatus for reducing polymer deposition on a substrate and substrate support |
US7972467B2 (en) | 2003-04-17 | 2011-07-05 | Applied Materials Inc. | Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor |
US20040261712A1 (en) * | 2003-04-25 | 2004-12-30 | Daisuke Hayashi | Plasma processing apparatus |
KR100578129B1 (ko) * | 2003-09-19 | 2006-05-10 | 삼성전자주식회사 | 플라즈마 식각 장치 |
US7001482B2 (en) * | 2003-11-12 | 2006-02-21 | Tokyo Electron Limited | Method and apparatus for improved focus ring |
-
2005
- 2005-01-28 US US11/046,135 patent/US20060172542A1/en not_active Abandoned
-
2006
- 2006-01-24 TW TW095102667A patent/TWI333225B/zh active
- 2006-01-24 TW TW095208718U patent/TWM301400U/zh not_active IP Right Cessation
- 2006-01-25 SG SG200600529A patent/SG124401A1/en unknown
- 2006-01-26 KR KR1020060008360A patent/KR100900595B1/ko active IP Right Grant
- 2006-01-27 CN CN2006100032313A patent/CN1812681B/zh active Active
- 2006-01-27 EP EP06001700A patent/EP1686611B9/en not_active Expired - Fee Related
- 2006-01-27 DE DE602006002282T patent/DE602006002282D1/de active Active
- 2006-01-27 CN CN200610127801XA patent/CN101008072B/zh active Active
- 2006-01-30 JP JP2006021181A patent/JP4713352B2/ja not_active Expired - Fee Related
- 2006-05-03 US US11/381,399 patent/US7618516B2/en active Active
- 2006-05-19 JP JP2006003800U patent/JP3123883U/ja not_active Expired - Fee Related
- 2006-06-13 KR KR1020060053048A patent/KR20060087474A/ko not_active Application Discontinuation
- 2006-09-13 US US11/531,479 patent/US7674353B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI735351B (zh) * | 2019-11-26 | 2021-08-01 | 大陸商中微半導體設備(上海)股份有限公司 | 具有釋放靜電功能的冷卻管組件、冷卻裝置和電漿處理設備 |
Also Published As
Publication number | Publication date |
---|---|
TWI333225B (en) | 2010-11-11 |
KR20060087474A (ko) | 2006-08-02 |
CN1812681B (zh) | 2012-02-01 |
CN101008072B (zh) | 2011-05-18 |
KR100900595B1 (ko) | 2009-06-02 |
CN1812681A (zh) | 2006-08-02 |
US7674353B2 (en) | 2010-03-09 |
DE602006002282D1 (de) | 2008-10-02 |
US7618516B2 (en) | 2009-11-17 |
TWM301400U (en) | 2006-11-21 |
US20070023145A1 (en) | 2007-02-01 |
EP1686611B9 (en) | 2009-08-05 |
US20060193102A1 (en) | 2006-08-31 |
KR20060087432A (ko) | 2006-08-02 |
JP2006270054A (ja) | 2006-10-05 |
CN101008072A (zh) | 2007-08-01 |
EP1686611A1 (en) | 2006-08-02 |
EP1686611B1 (en) | 2008-08-20 |
US20060172542A1 (en) | 2006-08-03 |
JP3123883U (ja) | 2006-07-27 |
JP4713352B2 (ja) | 2011-06-29 |
SG124401A1 (en) | 2006-08-30 |
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