TWI901664B - 半導體用處理液及其製造方法 - Google Patents

半導體用處理液及其製造方法

Info

Publication number
TWI901664B
TWI901664B TW110111911A TW110111911A TWI901664B TW I901664 B TWI901664 B TW I901664B TW 110111911 A TW110111911 A TW 110111911A TW 110111911 A TW110111911 A TW 110111911A TW I901664 B TWI901664 B TW I901664B
Authority
TW
Taiwan
Prior art keywords
ions
solution
treatment solution
bromine
group
Prior art date
Application number
TW110111911A
Other languages
English (en)
Chinese (zh)
Other versions
TW202138620A (zh
Inventor
吉川由樹
佐藤伴光
下田享史
根岸貴幸
Original Assignee
日商德山股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商德山股份有限公司 filed Critical 日商德山股份有限公司
Publication of TW202138620A publication Critical patent/TW202138620A/zh
Application granted granted Critical
Publication of TWI901664B publication Critical patent/TWI901664B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/38—Alkaline compositions for etching refractory metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Treatment Of Water By Oxidation Or Reduction (AREA)
TW110111911A 2020-03-31 2021-03-31 半導體用處理液及其製造方法 TWI901664B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020064912 2020-03-31
JP2020-064912 2020-03-31

Publications (2)

Publication Number Publication Date
TW202138620A TW202138620A (zh) 2021-10-16
TWI901664B true TWI901664B (zh) 2025-10-21

Family

ID=77929020

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110111911A TWI901664B (zh) 2020-03-31 2021-03-31 半導體用處理液及其製造方法

Country Status (5)

Country Link
US (1) US12509632B2 (https=)
JP (1) JP7627686B2 (https=)
KR (1) KR20220159387A (https=)
TW (1) TWI901664B (https=)
WO (1) WO2021201094A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12444617B2 (en) * 2020-08-07 2025-10-14 Tokuyama Corporation Semiconductor wafer processing liquid containing hypobromite ions and PH buffering agent
US20240000084A1 (en) * 2020-10-09 2024-01-04 Acenet Inc. Antipathogenic agent, antibacterial agent, antiviral agent, pathogen disposal device, antipathogenic agent production method, antibacterial treatment method, virus inactivation method, and pathogen disposal method
US20230121639A1 (en) * 2021-10-20 2023-04-20 Entegris, Inc. Selective wet etch composition and method
JPWO2023190984A1 (https=) * 2022-03-31 2023-10-05
KR20240078469A (ko) 2022-11-24 2024-06-04 현대모비스 주식회사 3차원 입체 구조 전장 부품용 광경화성 점접착제 조성물
CN116873867B (zh) * 2023-09-08 2023-11-10 珙县华洁危险废物治理有限责任公司成都分公司 一种高纯溴素的无害化处理方法和无害化处理系统
WO2025143006A1 (ja) * 2023-12-28 2025-07-03 株式会社トクヤマ 次亜臭素酸第四級アルキルアンモニウム溶液の製造方法及び半導体ウエハの処理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11293478A (ja) * 1998-04-14 1999-10-26 Fron Tec:Kk エッチング剤
CN101833251A (zh) * 2004-02-11 2010-09-15 马林克罗特贝克公司 含有卤素含氧酸、其盐及其衍生物的微电子清洗组合物
TW201704538A (zh) * 2015-07-09 2017-02-01 恩特葛瑞斯股份有限公司 相對於鍺選擇性蝕刻矽鍺之配方
US20190144728A1 (en) * 2015-01-19 2019-05-16 Fujimi Incorporated Polishing composition

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3765270B2 (ja) * 2001-12-27 2006-04-12 Ｊｆｅスチール株式会社 溶融めっき金属帯の製造方法および製造装置
JP2003193272A (ja) * 2001-12-28 2003-07-09 Mitsubishi Gas Chem Co Inc モリブデンを主成分とする膜のエッチング方法
US7939042B2 (en) * 2002-05-06 2011-05-10 Bromine Compounds Ltd. Process for the preparation of concentrated solutions of stabilized hypobromites
JP2004031791A (ja) 2002-06-27 2004-01-29 Mitsubishi Chemicals Corp タングステン合金のエッチング液及びエッチング方法
JP4355201B2 (ja) 2003-12-02 2009-10-28 関東化学株式会社 タングステン金属除去液及びそれを用いたタングステン金属の除去方法
WO2011074601A1 (ja) * 2009-12-17 2011-06-23 昭和電工株式会社 ルテニウム系金属のエッチング用組成物およびその調製方法
JP5544898B2 (ja) 2010-01-25 2014-07-09 東ソー株式会社 タングステンのエッチング液
KR101891363B1 (ko) * 2010-10-13 2018-08-24 엔테그리스, 아이엔씨. 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법
KR20140134283A (ko) 2012-03-12 2014-11-21 가부시끼가이샤 제이씨유 선택적 에칭방법
KR102069158B1 (ko) 2012-05-10 2020-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 배선의 형성 방법, 반도체 장치, 및 반도체 장치의 제작 방법
KR102405063B1 (ko) 2014-06-30 2022-06-07 엔테그리스, 아이엔씨. 텅스텐 및 코발트 상용성을 갖는 에치후 잔류물을 제거하기 위한 수성 및 반-수성 세정제
KR101576377B1 (ko) * 2014-07-01 2015-12-11 현대다이모스(주) 헤드레스트 리클라이닝 모듈
CN111684570B (zh) 2018-01-16 2024-02-27 株式会社德山 含有次氯酸根离子的半导体晶圆的处理液
KR102521227B1 (ko) 2018-09-12 2023-04-13 후지필름 가부시키가이샤 약액, 기판의 처리 방법
JP6874231B1 (ja) * 2019-09-27 2021-05-19 株式会社トクヤマ ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法
JP7050184B2 (ja) * 2019-09-27 2022-04-07 株式会社トクヤマ ルテニウムの半導体用処理液及びその製造方法
KR102582791B1 (ko) * 2020-02-25 2023-09-25 가부시끼가이샤 도꾸야마 루테늄의 반도체용 처리액
US12444617B2 (en) * 2020-08-07 2025-10-14 Tokuyama Corporation Semiconductor wafer processing liquid containing hypobromite ions and PH buffering agent
JP7819114B2 (ja) * 2020-11-26 2026-02-24 株式会社トクヤマ 半導体ウェハの処理液及びその製造方法
US20220328320A1 (en) * 2021-03-31 2022-10-13 Tokuyama Corporation Semiconductor treatment liquid

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11293478A (ja) * 1998-04-14 1999-10-26 Fron Tec:Kk エッチング剤
CN101833251A (zh) * 2004-02-11 2010-09-15 马林克罗特贝克公司 含有卤素含氧酸、其盐及其衍生物的微电子清洗组合物
US20190144728A1 (en) * 2015-01-19 2019-05-16 Fujimi Incorporated Polishing composition
TW201704538A (zh) * 2015-07-09 2017-02-01 恩特葛瑞斯股份有限公司 相對於鍺選擇性蝕刻矽鍺之配方

Also Published As

Publication number Publication date
TW202138620A (zh) 2021-10-16
JP7627686B2 (ja) 2025-02-06
JPWO2021201094A1 (https=) 2021-10-07
KR20220159387A (ko) 2022-12-02
WO2021201094A1 (ja) 2021-10-07
US12509632B2 (en) 2025-12-30
WO2021201094A9 (ja) 2022-08-18
US20230126771A1 (en) 2023-04-27

Similar Documents

Publication Publication Date Title
TWI901664B (zh) 半導體用處理液及其製造方法
TWI810469B (zh) 釕的半導體用處理液及其製造方法
JP7735233B2 (ja) 半導体ウエハ用処理液
US20220328320A1 (en) Semiconductor treatment liquid
US12247298B2 (en) Semiconductor wafer treatment liquid and production method thereof
KR20250083458A (ko) 드라이 에칭 잔류물 제거액
TWI920121B (zh) 半導體晶圓用處理液
WO2026083966A1 (ja) 半導体処理液、処理方法及び半導体基板の製造方法