KR20220159387A - 반도체용 처리액 및 그 제조 방법 - Google Patents

반도체용 처리액 및 그 제조 방법 Download PDF

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Publication number
KR20220159387A
KR20220159387A KR1020227033690A KR20227033690A KR20220159387A KR 20220159387 A KR20220159387 A KR 20220159387A KR 1020227033690 A KR1020227033690 A KR 1020227033690A KR 20227033690 A KR20227033690 A KR 20227033690A KR 20220159387 A KR20220159387 A KR 20220159387A
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KR
South Korea
Prior art keywords
treatment liquid
bromine
metal
ions
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020227033690A
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English (en)
Korean (ko)
Inventor
유키 깃카와
도모아키 사토
다카후미 시모다
다카유키 네기시
Original Assignee
가부시끼가이샤 도꾸야마
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 가부시끼가이샤 도꾸야마 filed Critical 가부시끼가이샤 도꾸야마
Publication of KR20220159387A publication Critical patent/KR20220159387A/ko
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/38—Alkaline compositions for etching refractory metals
    • H01L21/32134—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Treatment Of Water By Oxidation Or Reduction (AREA)
KR1020227033690A 2020-03-31 2021-03-31 반도체용 처리액 및 그 제조 방법 Pending KR20220159387A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-064912 2020-03-31
JP2020064912 2020-03-31
PCT/JP2021/013822 WO2021201094A1 (ja) 2020-03-31 2021-03-31 半導体用処理液及びその製造方法

Publications (1)

Publication Number Publication Date
KR20220159387A true KR20220159387A (ko) 2022-12-02

Family

ID=77929020

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227033690A Pending KR20220159387A (ko) 2020-03-31 2021-03-31 반도체용 처리액 및 그 제조 방법

Country Status (5)

Country Link
US (1) US12509632B2 (https=)
JP (1) JP7627686B2 (https=)
KR (1) KR20220159387A (https=)
TW (1) TWI901664B (https=)
WO (1) WO2021201094A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023120845A1 (de) 2022-11-24 2024-05-29 Hyundai Mobis Co., Ltd. Lichthärtbare druckempfindliche klebstoffzusammensetzung für elektrische bauelemente mit dreidimensionaler struktur

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US12444617B2 (en) * 2020-08-07 2025-10-14 Tokuyama Corporation Semiconductor wafer processing liquid containing hypobromite ions and PH buffering agent
US20240000084A1 (en) * 2020-10-09 2024-01-04 Acenet Inc. Antipathogenic agent, antibacterial agent, antiviral agent, pathogen disposal device, antipathogenic agent production method, antibacterial treatment method, virus inactivation method, and pathogen disposal method
US20230121639A1 (en) * 2021-10-20 2023-04-20 Entegris, Inc. Selective wet etch composition and method
JPWO2023190984A1 (https=) * 2022-03-31 2023-10-05
CN116873867B (zh) * 2023-09-08 2023-11-10 珙县华洁危险废物治理有限责任公司成都分公司 一种高纯溴素的无害化处理方法和无害化处理系统
WO2025143006A1 (ja) * 2023-12-28 2025-07-03 株式会社トクヤマ 次亜臭素酸第四級アルキルアンモニウム溶液の製造方法及び半導体ウエハの処理方法

Citations (5)

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JP2004031791A (ja) 2002-06-27 2004-01-29 Mitsubishi Chemicals Corp タングステン合金のエッチング液及びエッチング方法
JP2005166924A (ja) 2003-12-02 2005-06-23 Kanto Chem Co Inc タングステン金属除去液及びそれを用いたタングステン金属の除去方法
JP2011151287A (ja) 2010-01-25 2011-08-04 Tosoh Corp タングステンのエッチング液
JP2013254946A (ja) 2012-05-10 2013-12-19 Semiconductor Energy Lab Co Ltd 配線の形成方法、半導体装置、および半導体装置の作製方法
WO2019142788A1 (ja) 2018-01-16 2019-07-25 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液

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JP4094110B2 (ja) * 1998-04-14 2008-06-04 エルジー．フィリップス エルシーデー カンパニー，リミテッド エッチング剤
JP3765270B2 (ja) * 2001-12-27 2006-04-12 Ｊｆｅスチール株式会社 溶融めっき金属帯の製造方法および製造装置
JP2003193272A (ja) * 2001-12-28 2003-07-09 Mitsubishi Gas Chem Co Inc モリブデンを主成分とする膜のエッチング方法
US7939042B2 (en) * 2002-05-06 2011-05-10 Bromine Compounds Ltd. Process for the preparation of concentrated solutions of stabilized hypobromites
BRPI0418529A (pt) 2004-02-11 2007-05-15 Mallinckrodt Baker Inc composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos
WO2011074601A1 (ja) * 2009-12-17 2011-06-23 昭和電工株式会社 ルテニウム系金属のエッチング用組成物およびその調製方法
KR101891363B1 (ko) * 2010-10-13 2018-08-24 엔테그리스, 아이엔씨. 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법
KR20140134283A (ko) 2012-03-12 2014-11-21 가부시끼가이샤 제이씨유 선택적 에칭방법
KR102405063B1 (ko) 2014-06-30 2022-06-07 엔테그리스, 아이엔씨. 텅스텐 및 코발트 상용성을 갖는 에치후 잔류물을 제거하기 위한 수성 및 반-수성 세정제
KR101576377B1 (ko) * 2014-07-01 2015-12-11 현대다이모스(주) 헤드레스트 리클라이닝 모듈
US20170342304A1 (en) * 2015-01-19 2017-11-30 Fujimi Incorporated Polishing composition
CN107851660B (zh) * 2015-07-09 2022-02-01 恩特格里斯公司 相对于锗选择性蚀刻硅锗的调配物
KR102521227B1 (ko) 2018-09-12 2023-04-13 후지필름 가부시키가이샤 약액, 기판의 처리 방법
JP6874231B1 (ja) * 2019-09-27 2021-05-19 株式会社トクヤマ ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法
JP7050184B2 (ja) * 2019-09-27 2022-04-07 株式会社トクヤマ ルテニウムの半導体用処理液及びその製造方法
KR102582791B1 (ko) * 2020-02-25 2023-09-25 가부시끼가이샤 도꾸야마 루테늄의 반도체용 처리액
US12444617B2 (en) * 2020-08-07 2025-10-14 Tokuyama Corporation Semiconductor wafer processing liquid containing hypobromite ions and PH buffering agent
JP7819114B2 (ja) * 2020-11-26 2026-02-24 株式会社トクヤマ 半導体ウェハの処理液及びその製造方法
US20220328320A1 (en) * 2021-03-31 2022-10-13 Tokuyama Corporation Semiconductor treatment liquid

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004031791A (ja) 2002-06-27 2004-01-29 Mitsubishi Chemicals Corp タングステン合金のエッチング液及びエッチング方法
JP2005166924A (ja) 2003-12-02 2005-06-23 Kanto Chem Co Inc タングステン金属除去液及びそれを用いたタングステン金属の除去方法
JP2011151287A (ja) 2010-01-25 2011-08-04 Tosoh Corp タングステンのエッチング液
JP2013254946A (ja) 2012-05-10 2013-12-19 Semiconductor Energy Lab Co Ltd 配線の形成方法、半導体装置、および半導体装置の作製方法
WO2019142788A1 (ja) 2018-01-16 2019-07-25 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023120845A1 (de) 2022-11-24 2024-05-29 Hyundai Mobis Co., Ltd. Lichthärtbare druckempfindliche klebstoffzusammensetzung für elektrische bauelemente mit dreidimensionaler struktur

Also Published As

Publication number Publication date
TW202138620A (zh) 2021-10-16
JP7627686B2 (ja) 2025-02-06
JPWO2021201094A1 (https=) 2021-10-07
WO2021201094A1 (ja) 2021-10-07
US12509632B2 (en) 2025-12-30
WO2021201094A9 (ja) 2022-08-18
TWI901664B (zh) 2025-10-21
US20230126771A1 (en) 2023-04-27

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