JP7627686B2 - 半導体用処理液及びその製造方法 - Google Patents

半導体用処理液及びその製造方法 Download PDF

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Publication number
JP7627686B2
JP7627686B2 JP2022512617A JP2022512617A JP7627686B2 JP 7627686 B2 JP7627686 B2 JP 7627686B2 JP 2022512617 A JP2022512617 A JP 2022512617A JP 2022512617 A JP2022512617 A JP 2022512617A JP 7627686 B2 JP7627686 B2 JP 7627686B2
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Prior art keywords
ions
bromine
semiconductor processing
processing solution
hypobromite
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Japanese (ja)
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JPWO2021201094A1 (https=
JPWO2021201094A5 (https=
Inventor
由樹 吉川
伴光 佐藤
享史 下田
貴幸 根岸
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Tokuyama Corp
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Tokuyama Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/38—Alkaline compositions for etching refractory metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Treatment Of Water By Oxidation Or Reduction (AREA)
JP2022512617A 2020-03-31 2021-03-31 半導体用処理液及びその製造方法 Active JP7627686B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020064912 2020-03-31
JP2020064912 2020-03-31
PCT/JP2021/013822 WO2021201094A1 (ja) 2020-03-31 2021-03-31 半導体用処理液及びその製造方法

Publications (3)

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JPWO2021201094A1 JPWO2021201094A1 (https=) 2021-10-07
JPWO2021201094A5 JPWO2021201094A5 (https=) 2022-12-15
JP7627686B2 true JP7627686B2 (ja) 2025-02-06

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Family Applications (1)

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JP2022512617A Active JP7627686B2 (ja) 2020-03-31 2021-03-31 半導体用処理液及びその製造方法

Country Status (5)

Country Link
US (1) US12509632B2 (https=)
JP (1) JP7627686B2 (https=)
KR (1) KR20220159387A (https=)
TW (1) TWI901664B (https=)
WO (1) WO2021201094A1 (https=)

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* Cited by examiner, † Cited by third party
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US12444617B2 (en) * 2020-08-07 2025-10-14 Tokuyama Corporation Semiconductor wafer processing liquid containing hypobromite ions and PH buffering agent
US20240000084A1 (en) * 2020-10-09 2024-01-04 Acenet Inc. Antipathogenic agent, antibacterial agent, antiviral agent, pathogen disposal device, antipathogenic agent production method, antibacterial treatment method, virus inactivation method, and pathogen disposal method
US20230121639A1 (en) * 2021-10-20 2023-04-20 Entegris, Inc. Selective wet etch composition and method
JPWO2023190984A1 (https=) * 2022-03-31 2023-10-05
KR20240078469A (ko) 2022-11-24 2024-06-04 현대모비스 주식회사 3차원 입체 구조 전장 부품용 광경화성 점접착제 조성물
CN116873867B (zh) * 2023-09-08 2023-11-10 珙县华洁危险废物治理有限责任公司成都分公司 一种高纯溴素的无害化处理方法和无害化处理系统
WO2025143006A1 (ja) * 2023-12-28 2025-07-03 株式会社トクヤマ 次亜臭素酸第四級アルキルアンモニウム溶液の製造方法及び半導体ウエハの処理方法

Citations (5)

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JP2003193272A (ja) 2001-12-28 2003-07-09 Mitsubishi Gas Chem Co Inc モリブデンを主成分とする膜のエッチング方法
JP2008124494A (ja) 2004-02-11 2008-05-29 Mallinckrodt Baker Inc ハロゲン酸素酸、その塩及び誘導体含有、マイクロエレクトロニクス洗浄組成物
WO2013136555A1 (ja) 2012-03-12 2013-09-19 株式会社Ｊｃｕ 選択的エッチング方法
US20130303420A1 (en) 2010-10-13 2013-11-14 International Business Machines Corporation Composition for and method of suppressing titanium nitride corrosion
WO2020054296A1 (ja) 2018-09-12 2020-03-19 富士フイルム株式会社 薬液、基板の処理方法

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JP4094110B2 (ja) * 1998-04-14 2008-06-04 エルジー．フィリップス エルシーデー カンパニー，リミテッド エッチング剤
JP3765270B2 (ja) * 2001-12-27 2006-04-12 Ｊｆｅスチール株式会社 溶融めっき金属帯の製造方法および製造装置
US7939042B2 (en) * 2002-05-06 2011-05-10 Bromine Compounds Ltd. Process for the preparation of concentrated solutions of stabilized hypobromites
JP2004031791A (ja) 2002-06-27 2004-01-29 Mitsubishi Chemicals Corp タングステン合金のエッチング液及びエッチング方法
JP4355201B2 (ja) 2003-12-02 2009-10-28 関東化学株式会社 タングステン金属除去液及びそれを用いたタングステン金属の除去方法
WO2011074601A1 (ja) * 2009-12-17 2011-06-23 昭和電工株式会社 ルテニウム系金属のエッチング用組成物およびその調製方法
JP5544898B2 (ja) 2010-01-25 2014-07-09 東ソー株式会社 タングステンのエッチング液
KR102069158B1 (ko) 2012-05-10 2020-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 배선의 형성 방법, 반도체 장치, 및 반도체 장치의 제작 방법
KR102405063B1 (ko) 2014-06-30 2022-06-07 엔테그리스, 아이엔씨. 텅스텐 및 코발트 상용성을 갖는 에치후 잔류물을 제거하기 위한 수성 및 반-수성 세정제
KR101576377B1 (ko) * 2014-07-01 2015-12-11 현대다이모스(주) 헤드레스트 리클라이닝 모듈
US20170342304A1 (en) * 2015-01-19 2017-11-30 Fujimi Incorporated Polishing composition
CN107851660B (zh) * 2015-07-09 2022-02-01 恩特格里斯公司 相对于锗选择性蚀刻硅锗的调配物
CN111684570B (zh) 2018-01-16 2024-02-27 株式会社德山 含有次氯酸根离子的半导体晶圆的处理液
JP6874231B1 (ja) * 2019-09-27 2021-05-19 株式会社トクヤマ ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法
JP7050184B2 (ja) * 2019-09-27 2022-04-07 株式会社トクヤマ ルテニウムの半導体用処理液及びその製造方法
KR102582791B1 (ko) * 2020-02-25 2023-09-25 가부시끼가이샤 도꾸야마 루테늄의 반도체용 처리액
US12444617B2 (en) * 2020-08-07 2025-10-14 Tokuyama Corporation Semiconductor wafer processing liquid containing hypobromite ions and PH buffering agent
JP7819114B2 (ja) * 2020-11-26 2026-02-24 株式会社トクヤマ 半導体ウェハの処理液及びその製造方法
US20220328320A1 (en) * 2021-03-31 2022-10-13 Tokuyama Corporation Semiconductor treatment liquid

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003193272A (ja) 2001-12-28 2003-07-09 Mitsubishi Gas Chem Co Inc モリブデンを主成分とする膜のエッチング方法
JP2008124494A (ja) 2004-02-11 2008-05-29 Mallinckrodt Baker Inc ハロゲン酸素酸、その塩及び誘導体含有、マイクロエレクトロニクス洗浄組成物
US20130303420A1 (en) 2010-10-13 2013-11-14 International Business Machines Corporation Composition for and method of suppressing titanium nitride corrosion
WO2013136555A1 (ja) 2012-03-12 2013-09-19 株式会社Ｊｃｕ 選択的エッチング方法
WO2020054296A1 (ja) 2018-09-12 2020-03-19 富士フイルム株式会社 薬液、基板の処理方法

Also Published As

Publication number Publication date
TW202138620A (zh) 2021-10-16
JPWO2021201094A1 (https=) 2021-10-07
KR20220159387A (ko) 2022-12-02
WO2021201094A1 (ja) 2021-10-07
US12509632B2 (en) 2025-12-30
WO2021201094A9 (ja) 2022-08-18
TWI901664B (zh) 2025-10-21
US20230126771A1 (en) 2023-04-27

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