TWI886259B - 基板處理裝置及基板處理裝置之控制方法 - Google Patents

基板處理裝置及基板處理裝置之控制方法 Download PDF

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Publication number
TWI886259B
TWI886259B TW110114025A TW110114025A TWI886259B TW I886259 B TWI886259 B TW I886259B TW 110114025 A TW110114025 A TW 110114025A TW 110114025 A TW110114025 A TW 110114025A TW I886259 B TWI886259 B TW I886259B
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TW
Taiwan
Prior art keywords
frequency power
impedance
substrate processing
frequency
substrate
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TW110114025A
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English (en)
Chinese (zh)
Other versions
TW202145340A (zh
Inventor
田中一光
李黎夫
辻本宏
寺澤淳
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW202145340A publication Critical patent/TW202145340A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW110114025A 2020-04-27 2021-04-20 基板處理裝置及基板處理裝置之控制方法 TWI886259B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-078481 2020-04-27
JP2020078481 2020-04-27

Publications (2)

Publication Number Publication Date
TW202145340A TW202145340A (zh) 2021-12-01
TWI886259B true TWI886259B (zh) 2025-06-11

Family

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Family Applications (1)

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TW110114025A TWI886259B (zh) 2020-04-27 2021-04-20 基板處理裝置及基板處理裝置之控制方法

Country Status (5)

Country Link
US (1) US11676800B2 (enExample)
JP (1) JP7433271B2 (enExample)
KR (1) KR102906804B1 (enExample)
CN (1) CN113643953B (enExample)
TW (1) TWI886259B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7433271B2 (ja) * 2020-04-27 2024-02-19 東京エレクトロン株式会社 基板処理装置および基板処理装置の制御方法
JPWO2024024594A1 (enExample) * 2022-07-28 2024-02-01
US12706277B2 (en) * 2023-09-08 2026-08-11 Applied Materials, Inc. Radio-frequency (RF) matching network and tuning technique

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150122421A1 (en) * 2013-11-05 2015-05-07 Tokyo Electron Limited Plasma processing apparatus

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US6197116B1 (en) * 1996-08-29 2001-03-06 Fujitsu Limited Plasma processing system
US6446572B1 (en) * 2000-08-18 2002-09-10 Tokyo Electron Limited Embedded plasma source for plasma density improvement
US7190119B2 (en) * 2003-11-07 2007-03-13 Lam Research Corporation Methods and apparatus for optimizing a substrate in a plasma processing system
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
KR100978886B1 (ko) * 2007-02-13 2010-08-31 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리방법 및 플라즈마처리장치
KR100870121B1 (ko) * 2007-04-19 2008-11-25 주식회사 플라즈마트 임피던스 매칭 방법 및 이 방법을 위한 매칭 시스템
JP5403151B2 (ja) * 2010-03-31 2014-01-29 東京エレクトロン株式会社 プラズマ処理装置用誘電体窓、プラズマ処理装置、およびプラズマ処理装置用誘電体窓の取り付け方法
JP5977509B2 (ja) * 2011-12-09 2016-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6099995B2 (ja) * 2013-01-24 2017-03-22 東京エレクトロン株式会社 試験装置
JP6162016B2 (ja) * 2013-10-09 2017-07-12 東京エレクトロン株式会社 プラズマ処理装置
JP6312405B2 (ja) * 2013-11-05 2018-04-18 東京エレクトロン株式会社 プラズマ処理装置
JP6512962B2 (ja) * 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
US10544519B2 (en) * 2017-08-25 2020-01-28 Aixtron Se Method and apparatus for surface preparation prior to epitaxial deposition
JP2019186099A (ja) * 2018-04-12 2019-10-24 東京エレクトロン株式会社 プラズマ処理装置
JP7175239B2 (ja) * 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
KR102189323B1 (ko) * 2019-07-16 2020-12-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7433271B2 (ja) * 2020-04-27 2024-02-19 東京エレクトロン株式会社 基板処理装置および基板処理装置の制御方法
US11361941B2 (en) * 2020-06-19 2022-06-14 Applied Materials, Inc. Methods and apparatus for processing a substrate
JP7661109B2 (ja) * 2020-07-31 2025-04-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

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US20150122421A1 (en) * 2013-11-05 2015-05-07 Tokyo Electron Limited Plasma processing apparatus

Also Published As

Publication number Publication date
JP7433271B2 (ja) 2024-02-19
JP2021176193A (ja) 2021-11-04
CN113643953B (zh) 2026-07-10
KR102906804B1 (ko) 2025-12-31
US11676800B2 (en) 2023-06-13
CN113643953A (zh) 2021-11-12
KR20210132611A (ko) 2021-11-04
TW202145340A (zh) 2021-12-01
US20210335577A1 (en) 2021-10-28

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