CN113643953B - 基片处理装置和基片处理装置的控制方法 - Google Patents

基片处理装置和基片处理装置的控制方法

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Publication number
CN113643953B
CN113643953B CN202110429611.8A CN202110429611A CN113643953B CN 113643953 B CN113643953 B CN 113643953B CN 202110429611 A CN202110429611 A CN 202110429611A CN 113643953 B CN113643953 B CN 113643953B
Authority
CN
China
Prior art keywords
impedance
frequency
processing apparatus
substrate processing
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110429611.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN113643953A (zh
Inventor
田中一光
李黎夫
辻本宏
寺泽淳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN113643953A publication Critical patent/CN113643953A/zh
Application granted granted Critical
Publication of CN113643953B publication Critical patent/CN113643953B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
CN202110429611.8A 2020-04-27 2021-04-21 基片处理装置和基片处理装置的控制方法 Active CN113643953B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-078481 2020-04-27
JP2020078481 2020-04-27

Publications (2)

Publication Number Publication Date
CN113643953A CN113643953A (zh) 2021-11-12
CN113643953B true CN113643953B (zh) 2026-07-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110429611.8A Active CN113643953B (zh) 2020-04-27 2021-04-21 基片处理装置和基片处理装置的控制方法

Country Status (5)

Country Link
US (1) US11676800B2 (enExample)
JP (1) JP7433271B2 (enExample)
KR (1) KR102906804B1 (enExample)
CN (1) CN113643953B (enExample)
TW (1) TWI886259B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7433271B2 (ja) * 2020-04-27 2024-02-19 東京エレクトロン株式会社 基板処理装置および基板処理装置の制御方法
JPWO2024024594A1 (enExample) * 2022-07-28 2024-02-01
US12706277B2 (en) * 2023-09-08 2026-08-11 Applied Materials, Inc. Radio-frequency (RF) matching network and tuning technique

Citations (1)

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CN110379699A (zh) * 2018-04-12 2019-10-25 东京毅力科创株式会社 等离子体处理装置

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US6446572B1 (en) * 2000-08-18 2002-09-10 Tokyo Electron Limited Embedded plasma source for plasma density improvement
US7190119B2 (en) * 2003-11-07 2007-03-13 Lam Research Corporation Methods and apparatus for optimizing a substrate in a plasma processing system
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
KR100978886B1 (ko) * 2007-02-13 2010-08-31 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리방법 및 플라즈마처리장치
KR100870121B1 (ko) * 2007-04-19 2008-11-25 주식회사 플라즈마트 임피던스 매칭 방법 및 이 방법을 위한 매칭 시스템
JP5403151B2 (ja) * 2010-03-31 2014-01-29 東京エレクトロン株式会社 プラズマ処理装置用誘電体窓、プラズマ処理装置、およびプラズマ処理装置用誘電体窓の取り付け方法
JP5977509B2 (ja) * 2011-12-09 2016-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6099995B2 (ja) * 2013-01-24 2017-03-22 東京エレクトロン株式会社 試験装置
JP6162016B2 (ja) * 2013-10-09 2017-07-12 東京エレクトロン株式会社 プラズマ処理装置
JP6374647B2 (ja) * 2013-11-05 2018-08-15 東京エレクトロン株式会社 プラズマ処理装置
JP6312405B2 (ja) * 2013-11-05 2018-04-18 東京エレクトロン株式会社 プラズマ処理装置
JP6512962B2 (ja) * 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
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JP7175239B2 (ja) * 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
KR102189323B1 (ko) * 2019-07-16 2020-12-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7433271B2 (ja) * 2020-04-27 2024-02-19 東京エレクトロン株式会社 基板処理装置および基板処理装置の制御方法
US11361941B2 (en) * 2020-06-19 2022-06-14 Applied Materials, Inc. Methods and apparatus for processing a substrate
JP7661109B2 (ja) * 2020-07-31 2025-04-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

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Also Published As

Publication number Publication date
JP7433271B2 (ja) 2024-02-19
JP2021176193A (ja) 2021-11-04
KR102906804B1 (ko) 2025-12-31
TWI886259B (zh) 2025-06-11
US11676800B2 (en) 2023-06-13
CN113643953A (zh) 2021-11-12
KR20210132611A (ko) 2021-11-04
TW202145340A (zh) 2021-12-01
US20210335577A1 (en) 2021-10-28

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