TWI885766B - 半導體繼電器及具備其之電氣零件單元 - Google Patents

半導體繼電器及具備其之電氣零件單元 Download PDF

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Publication number
TWI885766B
TWI885766B TW113107462A TW113107462A TWI885766B TW I885766 B TWI885766 B TW I885766B TW 113107462 A TW113107462 A TW 113107462A TW 113107462 A TW113107462 A TW 113107462A TW I885766 B TWI885766 B TW I885766B
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TW
Taiwan
Prior art keywords
mosfet
light
semiconductor relay
light receiving
aforementioned
Prior art date
Application number
TW113107462A
Other languages
English (en)
Chinese (zh)
Other versions
TW202504122A (zh
Inventor
北原大祐
栗秋智成
梶本剛志
高真祐
西川英男
Original Assignee
日商松下知識產權經營股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商松下知識產權經營股份有限公司 filed Critical 日商松下知識產權經營股份有限公司
Publication of TW202504122A publication Critical patent/TW202504122A/zh
Application granted granted Critical
Publication of TWI885766B publication Critical patent/TWI885766B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/15—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Electronic Switches (AREA)
TW113107462A 2023-03-14 2024-03-01 半導體繼電器及具備其之電氣零件單元 TWI885766B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-039857 2023-03-14
JP2023039857 2023-03-14

Publications (2)

Publication Number Publication Date
TW202504122A TW202504122A (zh) 2025-01-16
TWI885766B true TWI885766B (zh) 2025-06-01

Family

ID=92755016

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113107462A TWI885766B (zh) 2023-03-14 2024-03-01 半導體繼電器及具備其之電氣零件單元

Country Status (5)

Country Link
EP (1) EP4682960A1 (https=)
JP (1) JPWO2024190452A1 (https=)
CN (1) CN120883754A (https=)
TW (1) TWI885766B (https=)
WO (1) WO2024190452A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11163394A (ja) * 1997-11-28 1999-06-18 Matsushita Electric Works Ltd 半導体リレー
JP2005347373A (ja) * 2004-06-01 2005-12-15 Nec Compound Semiconductor Devices Ltd 半導体リレー、半導体装置及びその製造方法
US20090014669A1 (en) * 2007-03-28 2009-01-15 Nobuhiro Sato Semiconductor relay
TWM564290U (zh) * 2018-04-25 2018-07-21 睿宇興業有限公司 光繼電器
JP2021089971A (ja) * 2019-12-04 2021-06-10 株式会社東芝 フォトリレー
JP2022031157A (ja) * 2020-08-05 2022-02-18 パナソニックＩｐマネジメント株式会社 半導体リレーモジュール

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5491894B2 (ja) * 2010-02-15 2014-05-14 パナソニック株式会社 半導体リレー
JP2015050281A (ja) * 2013-08-30 2015-03-16 株式会社東芝 光結合装置
JP7240148B2 (ja) * 2018-11-21 2023-03-15 株式会社東芝 光結合装置
JP7273494B2 (ja) * 2018-12-13 2023-05-15 株式会社東芝 光結合装置およびその実装部材
JP7216678B2 (ja) * 2020-02-10 2023-02-01 株式会社東芝 光結合装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11163394A (ja) * 1997-11-28 1999-06-18 Matsushita Electric Works Ltd 半導体リレー
JP2005347373A (ja) * 2004-06-01 2005-12-15 Nec Compound Semiconductor Devices Ltd 半導体リレー、半導体装置及びその製造方法
US20090014669A1 (en) * 2007-03-28 2009-01-15 Nobuhiro Sato Semiconductor relay
TWM564290U (zh) * 2018-04-25 2018-07-21 睿宇興業有限公司 光繼電器
JP2021089971A (ja) * 2019-12-04 2021-06-10 株式会社東芝 フォトリレー
JP2022031157A (ja) * 2020-08-05 2022-02-18 パナソニックＩｐマネジメント株式会社 半導体リレーモジュール

Also Published As

Publication number Publication date
WO2024190452A1 (ja) 2024-09-19
TW202504122A (zh) 2025-01-16
JPWO2024190452A1 (https=) 2024-09-19
CN120883754A (zh) 2025-10-31
EP4682960A1 (en) 2026-01-21

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