CN120883754A - 半导体继电器和具备该半导体继电器的电气部件单元 - Google Patents

半导体继电器和具备该半导体继电器的电气部件单元

Info

Publication number
CN120883754A
CN120883754A CN202480016276.0A CN202480016276A CN120883754A CN 120883754 A CN120883754 A CN 120883754A CN 202480016276 A CN202480016276 A CN 202480016276A CN 120883754 A CN120883754 A CN 120883754A
Authority
CN
China
Prior art keywords
light
mosfet
semiconductor relay
source electrode
output terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480016276.0A
Other languages
English (en)
Chinese (zh)
Inventor
北原大祐
栗秋智成
梶本刚志
高真祐
西川英男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of CN120883754A publication Critical patent/CN120883754A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/15—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Electronic Switches (AREA)
CN202480016276.0A 2023-03-14 2024-03-01 半导体继电器和具备该半导体继电器的电气部件单元 Pending CN120883754A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-039857 2023-03-14
JP2023039857 2023-03-14
PCT/JP2024/007704 WO2024190452A1 (ja) 2023-03-14 2024-03-01 半導体リレー及びこれを備えた電気部品ユニット

Publications (1)

Publication Number Publication Date
CN120883754A true CN120883754A (zh) 2025-10-31

Family

ID=92755016

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480016276.0A Pending CN120883754A (zh) 2023-03-14 2024-03-01 半导体继电器和具备该半导体继电器的电气部件单元

Country Status (5)

Country Link
EP (1) EP4682960A1 (https=)
JP (1) JPWO2024190452A1 (https=)
CN (1) CN120883754A (https=)
TW (1) TWI885766B (https=)
WO (1) WO2024190452A1 (https=)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11163394A (ja) * 1997-11-28 1999-06-18 Matsushita Electric Works Ltd 半導体リレー
JP2005347373A (ja) * 2004-06-01 2005-12-15 Nec Compound Semiconductor Devices Ltd 半導体リレー、半導体装置及びその製造方法
JP2008244972A (ja) * 2007-03-28 2008-10-09 Advantest Corp 半導体リレー
JP5491894B2 (ja) * 2010-02-15 2014-05-14 パナソニック株式会社 半導体リレー
JP2015050281A (ja) * 2013-08-30 2015-03-16 株式会社東芝 光結合装置
TWM564290U (zh) * 2018-04-25 2018-07-21 睿宇興業有限公司 光繼電器
JP7240148B2 (ja) * 2018-11-21 2023-03-15 株式会社東芝 光結合装置
JP7273494B2 (ja) * 2018-12-13 2023-05-15 株式会社東芝 光結合装置およびその実装部材
JP7273701B2 (ja) * 2019-12-04 2023-05-15 株式会社東芝 フォトリレー
JP7216678B2 (ja) * 2020-02-10 2023-02-01 株式会社東芝 光結合装置
JP7724469B2 (ja) * 2020-08-05 2025-08-18 パナソニックＩｐマネジメント株式会社 半導体リレーモジュール

Also Published As

Publication number Publication date
WO2024190452A1 (ja) 2024-09-19
TW202504122A (zh) 2025-01-16
TWI885766B (zh) 2025-06-01
JPWO2024190452A1 (https=) 2024-09-19
EP4682960A1 (en) 2026-01-21

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