TWI881428B - 蝕刻液組成物 - Google Patents

蝕刻液組成物 Download PDF

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Publication number
TWI881428B
TWI881428B TW112130593A TW112130593A TWI881428B TW I881428 B TWI881428 B TW I881428B TW 112130593 A TW112130593 A TW 112130593A TW 112130593 A TW112130593 A TW 112130593A TW I881428 B TWI881428 B TW I881428B
Authority
TW
Taiwan
Prior art keywords
etching
inhibitor
silicon nitride
solution composition
etching solution
Prior art date
Application number
TW112130593A
Other languages
English (en)
Chinese (zh)
Other versions
TW202424159A (zh
Inventor
長尾將
三井孝雄
Original Assignee
日商Ｒａｓａ工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｒａｓａ工業股份有限公司 filed Critical 日商Ｒａｓａ工業股份有限公司
Publication of TW202424159A publication Critical patent/TW202424159A/zh
Application granted granted Critical
Publication of TWI881428B publication Critical patent/TWI881428B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
TW112130593A 2022-12-08 2023-08-15 蝕刻液組成物 TWI881428B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022196435 2022-12-08
JP2022-196435 2022-12-08

Publications (2)

Publication Number Publication Date
TW202424159A TW202424159A (zh) 2024-06-16
TWI881428B true TWI881428B (zh) 2025-04-21

Family

ID=91379139

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112130593A TWI881428B (zh) 2022-12-08 2023-08-15 蝕刻液組成物

Country Status (4)

Country Link
JP (1) JPWO2024122103A1 (https=)
KR (1) KR20250044782A (https=)
TW (1) TWI881428B (https=)
WO (1) WO2024122103A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025263258A1 (ja) * 2024-06-17 2025-12-26 ラサ工業株式会社 エッチング液組成物
WO2026075173A1 (ja) * 2024-10-04 2026-04-09 花王株式会社 エッチング液

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109698142A (zh) * 2017-10-20 2019-04-30 东京毅力科创株式会社 基板处理装置、基板处理方法以及存储介质
TW201920615A (zh) * 2017-09-06 2019-06-01 美商恩特葛瑞斯股份有限公司 用於蝕刻含氮化矽基材之組合物及方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5332197B2 (ja) * 2007-01-12 2013-11-06 東ソー株式会社 エッチング用組成物及びエッチング方法
CN107345137A (zh) * 2016-05-04 2017-11-14 Oci有限公司 能够抑制颗粒出现的蚀刻溶液
CN117568038A (zh) * 2016-12-26 2024-02-20 秀博瑞殷株式公社 蚀刻用组合物和使用该蚀刻用组合物制造半导体器件的方法
US11186771B2 (en) 2017-06-05 2021-11-30 Versum Materials Us, Llc Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device
JP7096799B2 (ja) 2018-08-31 2022-07-06 花王株式会社 エッチング液
JP7233252B2 (ja) * 2019-03-07 2023-03-06 関東化学株式会社 窒化ケイ素エッチング液組成物

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201920615A (zh) * 2017-09-06 2019-06-01 美商恩特葛瑞斯股份有限公司 用於蝕刻含氮化矽基材之組合物及方法
CN109698142A (zh) * 2017-10-20 2019-04-30 东京毅力科创株式会社 基板处理装置、基板处理方法以及存储介质

Also Published As

Publication number Publication date
KR20250044782A (ko) 2025-04-01
TW202424159A (zh) 2024-06-16
WO2024122103A1 (ja) 2024-06-13
JPWO2024122103A1 (https=) 2024-06-13

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