JPWO2024122103A1 - - Google Patents
Info
- Publication number
- JPWO2024122103A1 JPWO2024122103A1 JP2024562570A JP2024562570A JPWO2024122103A1 JP WO2024122103 A1 JPWO2024122103 A1 JP WO2024122103A1 JP 2024562570 A JP2024562570 A JP 2024562570A JP 2024562570 A JP2024562570 A JP 2024562570A JP WO2024122103 A1 JPWO2024122103 A1 JP WO2024122103A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022196435 | 2022-12-08 | ||
| PCT/JP2023/028410 WO2024122103A1 (ja) | 2022-12-08 | 2023-08-03 | エッチング液組成物 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024122103A1 true JPWO2024122103A1 (https=) | 2024-06-13 |
Family
ID=91379139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024562570A Pending JPWO2024122103A1 (https=) | 2022-12-08 | 2023-08-03 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2024122103A1 (https=) |
| KR (1) | KR20250044782A (https=) |
| TW (1) | TWI881428B (https=) |
| WO (1) | WO2024122103A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025263258A1 (ja) * | 2024-06-17 | 2025-12-26 | ラサ工業株式会社 | エッチング液組成物 |
| WO2026075173A1 (ja) * | 2024-10-04 | 2026-04-09 | 花王株式会社 | エッチング液 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009021538A (ja) * | 2007-01-12 | 2009-01-29 | Tosoh Corp | エッチング用組成物及びエッチング方法 |
| US20170321121A1 (en) * | 2016-05-04 | 2017-11-09 | Oci Company Ltd. | Etching solution capable of suppressing particle appearance |
| JP2020503664A (ja) * | 2016-12-26 | 2020-01-30 | ソウルブレイン シーオー．， エルティーディー． | エッチング用組成物およびこれを用いた半導体素子の製造方法 |
| JP2020145343A (ja) * | 2019-03-07 | 2020-09-10 | 関東化学株式会社 | 窒化ケイ素エッチング液組成物 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11186771B2 (en) | 2017-06-05 | 2021-11-30 | Versum Materials Us, Llc | Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device |
| KR102399990B1 (ko) * | 2017-09-06 | 2022-05-23 | 엔테그리스, 아이엔씨. | 질화 규소를 포함하는 기판을 에칭하는 조성물 및 방법 |
| KR102264002B1 (ko) * | 2017-10-20 | 2021-06-11 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치, 기판 처리 방법 및 기억 매체 |
| JP7096799B2 (ja) | 2018-08-31 | 2022-07-06 | 花王株式会社 | エッチング液 |
-
2023
- 2023-08-03 JP JP2024562570A patent/JPWO2024122103A1/ja active Pending
- 2023-08-03 WO PCT/JP2023/028410 patent/WO2024122103A1/ja not_active Ceased
- 2023-08-03 KR KR1020257007856A patent/KR20250044782A/ko active Pending
- 2023-08-15 TW TW112130593A patent/TWI881428B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009021538A (ja) * | 2007-01-12 | 2009-01-29 | Tosoh Corp | エッチング用組成物及びエッチング方法 |
| US20170321121A1 (en) * | 2016-05-04 | 2017-11-09 | Oci Company Ltd. | Etching solution capable of suppressing particle appearance |
| JP2020503664A (ja) * | 2016-12-26 | 2020-01-30 | ソウルブレイン シーオー．， エルティーディー． | エッチング用組成物およびこれを用いた半導体素子の製造方法 |
| JP2020145343A (ja) * | 2019-03-07 | 2020-09-10 | 関東化学株式会社 | 窒化ケイ素エッチング液組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI881428B (zh) | 2025-04-21 |
| KR20250044782A (ko) | 2025-04-01 |
| TW202424159A (zh) | 2024-06-16 |
| WO2024122103A1 (ja) | 2024-06-13 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250124 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20260224 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20260330 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20260407 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20260423 |