TWI870995B - 靜電夾持邊緣環之方法 - Google Patents

靜電夾持邊緣環之方法 Download PDF

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Publication number
TWI870995B
TWI870995B TW112133431A TW112133431A TWI870995B TW I870995 B TWI870995 B TW I870995B TW 112133431 A TW112133431 A TW 112133431A TW 112133431 A TW112133431 A TW 112133431A TW I870995 B TWI870995 B TW I870995B
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TW
Taiwan
Prior art keywords
ring
edge ring
edge
electrostatic
chuck
Prior art date
Application number
TW112133431A
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English (en)
Chinese (zh)
Other versions
TW202349431A (zh
Inventor
克利斯多夫 肯伯
凱伊斯 高夫
鳳 王
Original Assignee
美商蘭姆研究公司
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Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW202349431A publication Critical patent/TW202349431A/zh
Application granted granted Critical
Publication of TWI870995B publication Critical patent/TWI870995B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Magnetic Record Carriers (AREA)
  • Iron Core Of Rotating Electric Machines (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
TW112133431A 2016-11-03 2017-10-30 靜電夾持邊緣環之方法 TWI870995B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/343,010 2016-11-03
US15/343,010 US9922857B1 (en) 2016-11-03 2016-11-03 Electrostatically clamped edge ring

Publications (2)

Publication Number Publication Date
TW202349431A TW202349431A (zh) 2023-12-16
TWI870995B true TWI870995B (zh) 2025-01-21

Family

ID=61598561

Family Applications (2)

Application Number Title Priority Date Filing Date
TW112133431A TWI870995B (zh) 2016-11-03 2017-10-30 靜電夾持邊緣環之方法
TW106137281A TWI816646B (zh) 2016-11-03 2017-10-30 以靜電方式夾持的邊緣環

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW106137281A TWI816646B (zh) 2016-11-03 2017-10-30 以靜電方式夾持的邊緣環

Country Status (6)

Country Link
US (3) US9922857B1 (enExample)
JP (2) JP7200101B2 (enExample)
KR (3) KR102840767B1 (enExample)
CN (2) CN109891573B (enExample)
TW (2) TWI870995B (enExample)
WO (1) WO2018085054A2 (enExample)

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US9922857B1 (en) 2016-11-03 2018-03-20 Lam Research Corporation Electrostatically clamped edge ring
JP6861579B2 (ja) * 2017-06-02 2021-04-21 東京エレクトロン株式会社 プラズマ処理装置、静電吸着方法および静電吸着プログラム
US11848177B2 (en) 2018-02-23 2023-12-19 Lam Research Corporation Multi-plate electrostatic chucks with ceramic baseplates
US11201079B2 (en) * 2018-05-30 2021-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer chuck
JP2022520784A (ja) * 2019-02-12 2022-04-01 ラム リサーチ コーポレーション セラミックモノリシック本体を備えた静電チャック
JP7340938B2 (ja) * 2019-02-25 2023-09-08 東京エレクトロン株式会社 載置台及び基板処理装置
JP2021027152A (ja) * 2019-08-05 2021-02-22 キオクシア株式会社 プラズマ処理装置およびプラズマ処理方法
CN114556514B (zh) * 2019-10-10 2025-07-29 株式会社日立高新技术 试样支架、膜间距离调整机构以及带电粒子束装置
KR102697630B1 (ko) 2019-10-15 2024-08-23 삼성전자주식회사 식각 장치
JP2021077752A (ja) * 2019-11-07 2021-05-20 東京エレクトロン株式会社 プラズマ処理装置
JP7361588B2 (ja) * 2019-12-16 2023-10-16 東京エレクトロン株式会社 エッジリング及び基板処理装置
JP7308767B2 (ja) * 2020-01-08 2023-07-14 東京エレクトロン株式会社 載置台およびプラズマ処理装置
WO2021158612A1 (en) * 2020-02-04 2021-08-12 Lam Research Corporation Electrostatic edge ring mounting system for substrate processing
US11551916B2 (en) * 2020-03-20 2023-01-10 Applied Materials, Inc. Sheath and temperature control of a process kit in a substrate processing chamber
JP7454976B2 (ja) * 2020-03-24 2024-03-25 東京エレクトロン株式会社 基板支持台、プラズマ処理システム及びエッジリングの交換方法
CN115362543A (zh) * 2020-04-02 2022-11-18 朗姆研究公司 具有整合式密封件的冷却边缘环
US11728203B2 (en) 2020-10-13 2023-08-15 Canon Kabushiki Kaisha Chuck assembly, planarization process, apparatus and method of manufacturing an article
KR102744850B1 (ko) * 2022-08-10 2024-12-19 솔믹스 주식회사 포커스 링 및 이를 포함하는 플라즈마 식각장치
CN119325646A (zh) * 2022-09-30 2025-01-17 东京毅力科创株式会社 基片处理系统
KR102806976B1 (ko) * 2023-02-14 2025-05-15 주식회사 에프엑스티 채널이 형성된 탄화규소 링 및 그 제조방법

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TW200715402A (en) * 2005-08-08 2007-04-16 Lam Res Corp Edge ring assembly with dielectric spacer ring
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JP2017126727A (ja) 2016-01-15 2017-07-20 東京エレクトロン株式会社 載置台の構造及び半導体処理装置
US9922857B1 (en) * 2016-11-03 2018-03-20 Lam Research Corporation Electrostatically clamped edge ring
WO2021158612A1 (en) * 2020-02-04 2021-08-12 Lam Research Corporation Electrostatic edge ring mounting system for substrate processing

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Publication number Priority date Publication date Assignee Title
US6557248B1 (en) * 1994-02-22 2003-05-06 Applied Materials Inc. Method of fabricating an electrostatic chuck
US20030029610A1 (en) * 1997-01-02 2003-02-13 Cvc Products, Inc. Thermally conductive chuck for vacuum processor
TW200715402A (en) * 2005-08-08 2007-04-16 Lam Res Corp Edge ring assembly with dielectric spacer ring
TWM410975U (en) * 2009-12-01 2011-09-01 Lam Res Corp Component of edge ring assembly used in plasma etching chamber

Also Published As

Publication number Publication date
CN109891573A (zh) 2019-06-14
JP7200101B2 (ja) 2023-01-06
JP7455182B2 (ja) 2024-03-25
US20210166965A1 (en) 2021-06-03
KR20250120443A (ko) 2025-08-08
TW202349431A (zh) 2023-12-16
CN118248613A (zh) 2024-06-25
CN109891573B (zh) 2024-04-16
KR20230065355A (ko) 2023-05-11
KR102840767B1 (ko) 2025-07-30
US9922857B1 (en) 2018-03-20
JP2019534571A (ja) 2019-11-28
WO2018085054A2 (en) 2018-05-11
US20180166312A1 (en) 2018-06-14
KR20190067928A (ko) 2019-06-17
TWI816646B (zh) 2023-10-01
WO2018085054A3 (en) 2018-07-26
JP2023036780A (ja) 2023-03-14
TW201826316A (zh) 2018-07-16
US10923380B2 (en) 2021-02-16
US11935776B2 (en) 2024-03-19

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