TWI835847B - 載置台及基板處理裝置 - Google Patents

載置台及基板處理裝置 Download PDF

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TWI835847B
TWI835847B TW108132015A TW108132015A TWI835847B TW I835847 B TWI835847 B TW I835847B TW 108132015 A TW108132015 A TW 108132015A TW 108132015 A TW108132015 A TW 108132015A TW I835847 B TWI835847 B TW I835847B
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flow path
mounting
substrate
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inlet
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柏崎真克
石田寿文
佐佐木良
加藤武宏
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日商東京威力科創股份有限公司
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Abstract

本發明之課題係提高供載置被處理基板之載置面之溫度之均勻性。 本發明之載置台具有：基板載置構件，其具有供載置被處理基板之載置面；支持構件，其支持基板載置構件；冷媒流路，其於支持構件之內部沿載置面形成，且在與配置於載置面側之頂面相反側之底面設置有冷媒之導入口；及隔熱構件，其至少具有覆蓋頂面中之與導入口對向之部分之第1面狀部、及覆蓋冷媒流路彎曲之部分之內側面之第2面狀部。

Description

載置台及基板處理裝置
本發明係關於一種載置台及基板處理裝置。
先前以來，已知有針對半導體晶圓等被處理基板進行電漿處理等基板處理之基板處理裝置。於此種基板處理裝置中，為了進行被處理基板之溫度控制，沿供載置被處理基板之載置面於載置台之內部形成冷媒流路。冷媒流路之頂面配置於載置台之載置面側，於冷媒流路之與頂面相反側之底面設置有冷媒之導入口。 [先前技術文獻] [專利文獻]
[專利文獻1]日本專利特開2014-195047號公報
[發明所欲解決之問題]
本發明提供一種能夠提高供載置被處理基板之載置面之溫度之均勻性之技術。 [解決問題之技術手段]
本發明之一態樣之載置台具有：基板載置構件，其具有供載置被處理基板之載置面；支持構件，其支持上述基板載置構件；冷媒流路，其於上述支持構件之內部沿上述載置面形成，且在與配置於上述載置面側之頂面相反側之底面設置有冷媒之導入口；及隔熱構件，其至少具有覆蓋上述頂面中之與上述導入口對向之部分之第1面狀部、及覆蓋上述冷媒流路彎曲之部分之內側面之第2面狀部。 [發明之效果]
根據本發明，能夠發揮提高供載置被處理基板之載置面之溫度之均勻性之效果。
以下，參照圖式對各種實施形態進行詳細說明。再者，於各圖式中，對相同或相當之部分標註相同符號。
先前以來，已知有針對半導體晶圓等被處理基板進行電漿處理等基板處理之基板處理裝置。於此種基板處理裝置中，為了進行被處理基板之溫度控制，沿供載置被處理基板之載置面於載置台之內部形成冷媒流路。冷媒流路之頂面配置於載置台之載置面側，於冷媒流路之與頂面相反側之底面設置有冷媒之導入口。
然，於載置台之內部形成冷媒流路之情形時，流通於冷媒流路之冷媒之流速有時局部增大。例如於冷媒流路之頂面中之與冷媒之導入口對向之部分或冷媒流路彎曲之部分之內側面，冷媒之流速局部增大。當冷媒之流速局部增大時，會局部促進冷媒與載置台之間之熱交換。結果，於載置台，有供載置被處理基板之載置面之溫度之均勻性降低之虞。供載置被處理基板之載置面之溫度之均勻性之降低成為使被處理基板之品質惡化之主要原因，故而不佳。
[電漿處理裝置之構成] 首先，對基板處理裝置進行說明。基板處理裝置係針對被處理基板進行電漿處理之裝置。於本實施形態中，以將基板處理裝置設為對晶圓進行電漿蝕刻之電漿處理裝置之情形為例進行說明。
圖1係表示本實施形態之基板處理裝置之構成之概略剖視圖。基板處理裝置100具有氣密地構成且電性地設為接地電位之處理容器1。處理容器1形成為圓筒狀，例如由鋁等構成。處理容器1劃分形成產生電漿之處理空間。於處理容器1內，設置有水平地支持作為被處理基板之半導體晶圓(以下，簡稱為「晶圓」)W之載置台2。載置台2包含基台2a及靜電吸盤(ESC：Electrostatic Chuck)6。靜電吸盤6與基板載置構件對應，基台2a與支持構件對應。
基台2a形成為大致圓柱狀，由導電性金屬、例如鋁等構成。基台2a具有作為下部電極之功能。基台2a支持於支持台4。支持台4支持於例如由石英等構成之支持構件3。於基台2a及支持台4之周圍，設置有例如由石英等構成之圓筒狀之內壁構件3a。
於基台2a，經由第1整合器11a連接有第1RF電源10a，又，經由第2整合器11b連接有第2RF電源10b。第1RF電源10a為電漿產生用之電源，以自該第1RF電源10a向載置台2之基台2a供給特定頻率之高頻電力之方式構成。又，第2RF電源10b為離子提取用(偏壓用)之電源，以自該第2RF電源10b向載置台2之基台2a供給較第1RF電源10a低之特定頻率之高頻電力之方式構成。
靜電吸盤6形成為上表面平坦之圓盤狀，該上表面成為供載置晶圓W之載置面6e。靜電吸盤6係於絕緣體6b之間介置電極6a而構成，於電極6a連接有直流電源12。而且，以藉由自直流電源12向電極6a施加直流電壓，而利用庫倫力吸附晶圓W之方式構成。
又，於靜電吸盤6之外側，設置有環狀之邊緣環5。邊緣環5例如由單晶矽形成，支持於基台2a。再者，邊緣環5亦被稱為聚焦環。
於基台2a之內部形成有冷媒流路2d。於冷媒流路2d之一端部連接有導入流路2b，於另一端部連接有排出流路2c。導入流路2b及排出流路2c分別經由冷媒入口配管2e及冷媒出口配管2f與未圖示之冷卻單元連接。冷媒流路2d位於晶圓W之下方，以吸收晶圓W之熱量之方式發揮功能。基板處理裝置100構成為，能夠藉由使自冷卻單元所供給之冷媒、例如冷卻水或熱傳導液(Galden)等有機溶劑等在冷媒流路2d中循環，而將載置台2控制為特定之溫度。關於冷媒流路2d、導入流路2b、及排出流路2c之構造於下文進行敍述。
再者，基板處理裝置100亦可構成為，向晶圓W之背面側供給冷熱傳遞用氣體而能夠個別地控制溫度。例如，亦可以貫通載置台2等之方式，設置有用以向晶圓W之背面供給氦氣等冷熱傳遞用氣體(背面氣體(backside gas))之氣體供給管。氣體供給管與未圖示之氣體供給源連接。藉由該等構成，將利用靜電吸盤6吸附保持於載置台2之上表面之晶圓W控制為特定之溫度。
另一方面，於載置台2之上方，以與載置台2平行地對向之方式設置有具有作為上部電極之功能之簇射頭16。簇射頭16與載置台2作為一對電極(上部電極與下部電極)發揮功能。
簇射頭16設置於處理容器1之頂壁部分。簇射頭16具備本體部16a與形成電極板之上部頂板16b，介隔絕緣性構件95被支持於處理容器1之上部。本體部16a由導電性材料、例如表面經陽極氧化處理之鋁構成，且以於其下部能夠裝卸自如地支持上部頂板16b之方式構成。
本體部16a於內部設置有氣體擴散室16c。又，本體部16a以位於氣體擴散室16c之下部之方式於底部形成有多個氣體流通孔16d。又，上部頂板16b被設置成，氣體導入孔16e以於厚度方向上貫通該上部頂板16b之方式與上述氣體流通孔16d重疊。藉由此種構成，供給至氣體擴散室16c之處理氣體經由氣體流通孔16d及氣體導入孔16e呈簇射狀分散地供給至處理容器1內。
於本體部16a，形成有用以向氣體擴散室16c導入處理氣體之氣體導入口16g。於氣體導入口16g，連接有氣體供給配管15a之一端。於該氣體供給配管15a之另一端，連接有供給處理氣體之處理氣體供給源(氣體供給部)15。於氣體供給配管15a，自上游側依序設置有質量流量控制器(MFC)15b及開關閥V2。對氣體擴散室16c，經由氣體供給配管15a自處理氣體供給源15供給用於電漿蝕刻之處理氣體。對處理容器1內，自氣體擴散室16c經由氣體流通孔16d及氣體導入孔16e呈簇射狀分散地供給處理氣體。
於作為上述上部電極之簇射頭16，經由低通濾波器(LPF)71電性連接有可變直流電源72。該可變直流電源72構成為可藉由啟閉開關73而實施供電之開啟關閉。可變直流電源72之電流、電壓以及啟閉開關73之開啟關閉由如下所述之控制部90控制。再者，如下所述，於自第1RF電源10a、第2RF電源10b向載置台2施加高頻而於處理空間中產生電漿時，視需要藉由控制部90使啟閉開關73開啟，向作為上部電極之簇射頭16施加特定之直流電壓。
以自處理容器1之側壁延伸至較簇射頭16之高度位置更靠上方之方式設置有圓筒狀之接地導體1a。該圓筒狀之接地導體1a於其上部具有頂壁。
於處理容器1之底部形成有排氣口81。於排氣口81，經由排氣管82連接有第1排氣裝置83。第1排氣裝置83具有真空泵，以藉由使該真空泵作動而能夠將處理容器1內減壓至特定之真空度之方式構成。另一方面，於處理容器1內之側壁設置有晶圓W之搬入搬出口84，於該搬入搬出口84設置有打開關閉該搬入搬出口84之閘閥85。
於處理容器1之側部內側，沿內壁面設置有積存物遮罩86。積存物遮罩86防止蝕刻副產物(積存物)附著於處理容器1。於該積存物遮罩86之與晶圓W大致相同之高度位置，設置有能夠控制相對於地面之電位地連接之導電性構件(GND(ground，接地)塊)89，藉此防止異常放電。又，於積存物遮罩86之下端部，設置有沿內壁構件3a延伸之積存物遮罩87。積存物遮罩86、87被設為裝卸自如。
上述構成之基板處理裝置100之動作由控制部90統括地控制。於該控制部90，設置有具備CPU並控制基板處理裝置100之各部之製程控制器91、使用者界面92、及記憶部93。
使用者界面92包含工程管理者為了管理基板處理裝置100而進行指令之輸入操作之鍵盤、或可視化顯示基板處理裝置100之運轉狀況之顯示器等。
於記憶部93中儲存有製程配方，該製程配方記憶有用以利用製程控制器91之控制而實現由基板處理裝置100執行之各種處理之控制程式(軟體)或處理條件資料等。而且，視需要，根據來自使用者界面92之指示等自記憶部93叫出任意之製程配方並使製程控制器91執行，藉此於製程控制器91之控制下進行基板處理裝置100中之所期望之處理。又，控制程式或處理條件資料等製程配方亦可利用被儲存於電腦可讀取之電腦記憶媒體(例如硬碟、CD(Compact Disc，光碟)、軟碟、半導體記憶體等)等之狀態者，或者自其他裝置例如經由專用線路隨時傳送而線上使用。
[載置台之構成] 其次，參照圖2對載置台2之主要部分構成進行說明。圖2係表示本實施形態之載置台2之主要部分構成之一例之概略剖視圖。
載置台2具有基台2a及靜電吸盤6。靜電吸盤6形成為圓板狀，以與基台2a同軸之方式固定於基台2a。靜電吸盤6之上表面成為供載置晶圓W之載置面6e。
於基台2a之內部，沿載置面6e形成有冷媒流路2d。基板處理裝置100構成為可藉由使冷媒於冷媒流路2d中流通而控制載置台2之溫度。
圖3係自載置面6e側觀察本實施形態之載置台2所得之俯視圖。例如，如圖3所示，冷媒流路2d於基台2a之內部之與載置面6e對應之區域彎曲形成為螺旋狀。藉此，基板處理裝置100可於載置台2之載置面6e全域控制晶圓W之溫度。
返回圖2之說明。於冷媒流路2d，自相對於載置面6e之背面側連接有導入流路2b及排出流路2c。導入流路2b將冷媒導入至冷媒流路2d，排出流路2c將流通於冷媒流路2d之冷媒排出。導入流路2b例如以導入流路2b之延伸方向與流通於冷媒流路2d之冷媒之流動方向正交之方式自載置台2之相對於載置面6e之背面側延伸，連接於冷媒流路2d。又，排出流路2c例如以排出流路2c之延伸方向與流通於冷媒流路2d之冷媒之流動方向正交之方式自載置台2之相對於載置面6e之背面側延伸，連接於冷媒流路2d。
冷媒流路2d之頂面2g配置於載置面6e之背面側。於冷媒流路2d之與頂面2g為相反側之底面2h，設置有用以導入冷媒之導入口2i。冷媒流路2d之導入口2i形成冷媒流路2d與導入流路2b之連接部分。於冷媒流路2d之導入口2i，設置有藉由隔熱性材料所形成之隔熱構件110。作為隔熱性材料，例如可列舉樹脂、橡膠、陶瓷及金屬等。
圖4係表示本實施形態之隔熱構件110之設置態樣之一例之俯視圖。圖5係表示本實施形態之隔熱構件110之設置態樣之一例之剖視模式圖。圖6係表示本實施形態之隔熱構件110之構成之一例之立體圖。再者，圖4所示之構造與圖3所示之冷媒流路2d和導入流路2b之連接部分(即，冷媒流路2d之導入口2i)附近之構造對應。又，圖5與圖4所示之基台2a之V-V線之剖視圖對應。
如圖4～圖6所示，隔熱構件110具有本體部112、第1面狀部114、及第2面狀部116、117。本體部112裝卸自如地安裝於冷媒流路2d之導入口2i，連接於第1面狀部114。本體部112具有在本體部112安裝於冷媒流路2d之導入口之狀態下用以將本體部112固定於冷媒流路2d之底面2h之固定爪112a。
第1面狀部114自本體部112延伸，覆蓋冷媒流路2d之頂面2g中之至少與導入口2i對向之部分。於本實施形態中，第1面狀部114覆蓋特定部分A，該特定部分A係將冷媒流路2d之頂面2g中之與導入口2i對向之部分向冷媒之流動方向(圖4之箭頭F所示之方向)擴展特定之尺寸而獲得。
第2面狀部116、117自第1面狀部114延伸，覆蓋冷媒流路2d彎曲之部分之內側面(例如內側面2j-1或內側面2j-2)。於本實施形態中，第2面狀部116覆蓋與特定部分A連續之內側面2j-1，第2面狀部117覆蓋與特定部分A連續之內側面2j-2。
然，於載置台2之內部(即，基台2a之內部)形成有冷媒流路2d之情形時，流通於冷媒流路2d之冷媒之流速有時局部增大。例如於冷媒流路2d之頂面2g中之與導入口2i對向之部分或冷媒流路2d彎曲之部分之內側面(例如內側面2j-1或內側面2j-2)，冷媒之流速局部增大。當冷媒之流速局部增大時，會局部促進冷媒與基台2a之間之熱交換。結果，於載置台2，有損害供載置晶圓W之載置面6e之溫度之均勻性之虞。
因此，於基板處理裝置100中，於冷媒流路2d之導入口2i設置有隔熱構件110。即，隔熱構件110中之第1面狀部114覆蓋冷媒流路2d之頂面2g中之至少與導入口2i對向之部分。又，隔熱構件110中之第2面狀部116、117覆蓋冷媒流路2d彎曲之部分之內側面2j-1、2j-2。藉此，隔熱構件110可覆蓋冷媒流路2d之頂面2g中之與導入口2i對向之部分及冷媒流路2d彎曲之部分之內側面2j-1、2j-2，故而能夠抑制該等區域中冷媒之流速之增大。藉此，能夠抑制局部促進冷媒與基台2a之間之熱交換。其結果，能夠提高供載置晶圓W之載置面6e之溫度之均勻性。
[載置面之溫度分佈之模擬] 圖7係表示對載置面6e之溫度分佈進行模擬後之結果之一例之圖。於圖7中，「比較例」示出了於冷媒流路2d之導入口2i未設置隔熱構件110之情形時之溫度分佈。又，於圖7中，「實施例」示出了於冷媒流路2d之導入口2i設置有隔熱構件110之情形時之溫度分佈。再者，於圖7中，冷媒流路2d之導入口2i之位置由虛線之圓表示。
如圖7所示，於冷媒流路2d之導入口2i未設置隔熱構件110之情形時，載置面6e中之與冷媒流路2d之導入口2i對應之區域之溫度較其他區域之溫度降低。考慮其原因在於，於冷媒流路2d之頂面2g中之與導入口2i對向之部分或冷媒流路2d彎曲之部分之內側面2j-1、2j-2，冷媒之流速局部增大，局部促進了冷媒與基台2a之間之熱交換。
與此相對，於冷媒流路2d之導入口2i設置有隔熱構件110之情形時，載置面6e中之與冷媒流路2d之導入口2i對應之區域之溫度上升至與其他區域之溫度相同程度之溫度。即，於冷媒流路2d之導入口2i設置有隔熱構件110之情形時，與於冷媒流路2d之導入口2i未設置隔熱構件110之情形相比，載置面6e之溫度之均勻性提高。考慮其原因在於，藉由隔熱構件110覆蓋冷媒流路2d之頂面2g中之與導入口2i對向之部分及冷媒流路2d彎曲之部分之內側面2j-1、2j-2而抑制該等區域中冷媒與基台2a之間之熱交換。
以上，本實施形態之載置台2具有靜電吸盤6、基台2a、冷媒流路2d、及隔熱構件110。靜電吸盤6具有供載置晶圓W之載置面6e。基台2a支持靜電吸盤6。冷媒流路2d於基台2a之內部沿載置面6e形成，於與配置於載置面6e側之頂面2g為相反側之底面2h設置有冷媒之導入口2i。隔熱構件110具有第1面狀部114及第2面狀部116、117。第1面狀部114覆蓋冷媒流路2d之頂面2g中之至少與導入口2i對向之部分。第2面狀部116、117覆蓋冷媒流路2d彎曲之部分之內側面2j-1、2j-2。藉此，本實施形態之載置台2能夠提高供載置晶圓W之載置面6e之溫度之均勻性。
以上，對實施形態進行了說明，但不限定於上述實施形態，而能夠構成各種變化態樣。
例如，於實施形態之隔熱構件110中，亦可於第1面狀部114形成槽。圖8係表示隔熱構件110之構成之變化例之立體圖。於圖8所示之第1面狀部114形成有槽114a。槽114a使冷媒滯留。滯留於槽114a之冷媒藉由來自冷媒流路2d之頂面2g之熱輸入而被加熱成為高溫。即，槽114a藉由使經加熱而成為高溫之冷媒滯留而能夠進一步抑制流通於冷媒流路2d之冷媒與基台2a之間之熱交換。又，例如亦可於第2面狀部116、117形成槽。總之，只要於第1面狀部及第2面狀部之至少任一面狀部形成槽即可。
又，於實施形態中，以於冷媒流路2d之導入口2i設置隔熱構件110之情形為例進行了說明，但並不限定於此。例如，隔熱構件110亦可在可安裝之範圍內，設置於冷媒流路2d內之任意位置。例如，隔熱構件110亦可僅設置於冷媒流路2d彎曲之部分之內側面2j-1、2j-2。於此情形時，隔熱構件110亦可具有覆蓋冷媒流路2d彎曲之部分之內側面2j-1、2j-2之第2面狀部，並省略本體部112及第1面狀部114。
又，於實施形態中，以在形成於載置台2之內部之冷媒流路2d之導入口2i設置隔熱構件110之情形為例進行了說明，但並不限定於此。例如於作為上部電極之簇射頭16形成冷媒流路之情形時，亦可在形成於簇射頭16之冷媒流路之導入口設置隔熱構件110。藉此，能夠提高簇射頭16之與載置台2對向之面之溫度之均勻性。
又，於實施形態中，以基板處理裝置100係進行電漿蝕刻之電漿處理裝置之情形為例進行了說明，但並不限定於此。例如基板處理裝置100亦可為進行成膜或膜質之改善之基板處理裝置。
又，實施形態之基板處理裝置100為使用有電容耦合型電漿(CCP：Capacitively Coupled Plasma)之電漿處理裝置，但任意之電漿源均可應用於電漿處理裝置。作為應用於電漿處理裝置之電漿源，例如可列舉感應耦合電漿(ICP，Inductively Coupled Plasma)、輻射線槽孔天線(RLSA，Radial Line Slot Antenna)、電子回旋共振電漿(ECR，Electron Cyclotron Resonance Plasma)、螺旋波電漿(HWP，Helicon Wave Plasma)等。
1:處理容器 1a:接地導體 2:載置台 2a:基台 2b:導入流路 2c:排出流路 2d:冷媒流路 2e:冷媒入口配管 2f:冷媒出口配管 2g:頂面 2h:底面 2i:導入口 2j-1、2j-2:內側面 3:支持構件 3a:內壁構件 4:支持台 5:邊緣環 6:靜電吸盤 6a:電極 6b:絕緣體 6e:載置面 10a:第1RF電源 10b:第2RF電源 11a:第1整合器 11b:第2整合器 12:直流電源 15:處理氣體供給源(氣體供給部) 15a:氣體供給配管 15b:質量流量控制器(MFC) 16:簇射頭 16a:本體部 16b:上部頂板 16c:氣體擴散室 16d:氣體流通孔 16e:氣體導入孔 16g:氣體導入口 71:低通濾波器(LPF) 72:可變直流電源 73:啟閉開關 81:排氣口 82:排氣管 83:第1排氣裝置 84:搬入搬出口 85:閘閥 86:積存物遮罩 87:積存物遮罩 89:導電性構件(GND塊) 90:控制部 91:製程控制器 92:使用者界面 93:記憶部 95:絕緣性構件 100:基板處理裝置 110:隔熱構件 112:本體部 112a:固定爪 114:第1面狀部 114a:槽 116、117:第2面狀部 A:特定部分 V2:開關閥 W:晶圓
圖1係表示本實施形態之基板處理裝置之構成之概略剖視圖。 圖2係表示本實施形態之載置台之主要部分構成之一例之概略剖視圖。 圖3係自載置面側觀察本實施形態之載置台所得之俯視圖。 圖4係表示本實施形態之隔熱構件之設置態樣之一例之俯視圖。 圖5係表示本實施形態之隔熱構件之設置態樣之一例之剖視模式圖。 圖6係表示本實施形態之隔熱構件之構成之一例之立體圖。 圖7係表示將載置面之溫度分佈進行模擬所得之結果之一例之圖。 圖8係表示隔熱構件之構成之變化例之立體圖。
2a:基台
2b:導入流路
2d:冷媒流路
2g:頂面
2h:底面
2i:導入口
6:靜電吸盤
6b:絕緣體
6e:載置面
110:隔熱構件
112:本體部
112a:固定爪
114:第1面狀部
116:第2面狀部
A:特定部分

Claims (3)

  1. 一種載置台，其具有：基板載置構件，其具有供載置被處理基板之載置面；支持構件，其支持上述基板載置構件；冷媒流路，其於上述支持構件之內部沿上述載置面形成，且在與配置於上述載置面側之頂面相反側之底面設置有冷媒之導入口；及隔熱構件，其至少具有覆蓋上述頂面中之與上述導入口對向之部分之第1面狀部、及覆蓋上述冷媒流路彎曲之部分之內側面之第2面狀部；且於上述第1面狀部及上述第2面狀部之至少任一面狀部形成槽。
  2. 如請求項1之載置台，其中上述隔熱構件進而具有本體部，該本體部裝卸自如地安裝於上述冷媒流路之上述導入口，連接於上述第1面狀部。
  3. 一種基板處理裝置，其具備載置台，該載置台具有：基板載置構件，其具有供載置被處理基板之載置面；支持構件，其支持上述基板載置構件；冷媒流路，其於上述支持構件之內部沿上述載置面形成，在與配置於上述載置面側之頂面相反側之底面設置有冷媒之導入口；及隔熱構件，其至少具有覆蓋上述頂面中之與上述導入口對向之部分之第1面狀部、及覆蓋上述冷媒流路彎曲之部分之內側面之第2面狀部；且於上述第1面狀部及上述第2面狀部之至少任一面狀部形成槽。
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011205000A (ja) * 2010-03-26 2011-10-13 Tokyo Electron Ltd 載置台
JP2013161522A (ja) * 2012-02-01 2013-08-19 Ngk Insulators Ltd セラミックヒータ
TW201635424A (zh) * 2015-01-06 2016-10-01 東京威力科創股份有限公司 載置台及基板處理裝置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002343854A (ja) 2001-05-16 2002-11-29 Hitachi Ltd 試料載置台及び半導体装置
US7544251B2 (en) 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
JP2006261541A (ja) * 2005-03-18 2006-09-28 Tokyo Electron Ltd 基板載置台、基板処理装置および基板処理方法
JP4820137B2 (ja) * 2005-09-26 2011-11-24 株式会社日立国際電気 発熱体の保持構造体
CN101395705B (zh) * 2007-02-09 2011-08-10 株式会社日立国际电气 隔热构造体、加热装置、基板处理设备以及半导体器件的制造方法
JP5262878B2 (ja) * 2009-03-17 2013-08-14 東京エレクトロン株式会社 載置台構造及びプラズマ成膜装置
KR101499305B1 (ko) * 2010-03-16 2015-03-05 도쿄엘렉트론가부시키가이샤 성막 장치
US20130284372A1 (en) 2012-04-25 2013-10-31 Hamid Tavassoli Esc cooling base for large diameter subsrates
JP6173936B2 (ja) 2013-02-28 2017-08-02 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6296770B2 (ja) 2013-11-29 2018-03-20 日本特殊陶業株式会社 基板載置装置
JP5916909B1 (ja) * 2015-02-06 2016-05-11 株式会社日立国際電気 基板処理装置、ガス整流部、半導体装置の製造方法およびプログラム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011205000A (ja) * 2010-03-26 2011-10-13 Tokyo Electron Ltd 載置台
JP2013161522A (ja) * 2012-02-01 2013-08-19 Ngk Insulators Ltd セラミックヒータ
TW201635424A (zh) * 2015-01-06 2016-10-01 東京威力科創股份有限公司 載置台及基板處理裝置

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