TWI860460B - 氣體檢查方法、基板處理方法及基板處理系統 - Google Patents

氣體檢查方法、基板處理方法及基板處理系統 Download PDF

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Publication number
TWI860460B
TWI860460B TW110108573A TW110108573A TWI860460B TW I860460 B TWI860460 B TW I860460B TW 110108573 A TW110108573 A TW 110108573A TW 110108573 A TW110108573 A TW 110108573A TW I860460 B TWI860460 B TW I860460B
Authority
TW
Taiwan
Prior art keywords
pressure
flow controller
standard deviation
threshold value
secondary valve
Prior art date
Application number
TW110108573A
Other languages
English (en)
Chinese (zh)
Other versions
TW202146856A (zh
Inventor
松田梨沙子
網倉紀彦
Original Assignee
日商東京威力科創股份有限公司
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Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202146856A publication Critical patent/TW202146856A/zh
Application granted granted Critical
Publication of TWI860460B publication Critical patent/TWI860460B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K37/00—Special means in or on valves or other cut-off apparatus for indicating or recording operation thereof, or for enabling an alarm to be given
    • F16K37/0075—For recording or indicating the functioning of a valve in combination with test equipment
    • F16K37/0091—For recording or indicating the functioning of a valve in combination with test equipment by measuring fluid parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/05—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects
    • G01F1/34—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00—Control of fluid pressure
    • G05D16/20—Control of fluid pressure characterised by the use of electric means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Fluid Mechanics (AREA)
  • Automation & Control Theory (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Flow Control (AREA)
TW110108573A 2020-03-24 2021-03-10 氣體檢查方法、基板處理方法及基板處理系統 TWI860460B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-052394 2020-03-24
JP2020052394A JP7398306B2 (ja) 2020-03-24 2020-03-24 ガス検査方法、基板処理方法及び基板処理システム

Publications (2)

Publication Number Publication Date
TW202146856A TW202146856A (zh) 2021-12-16
TWI860460B true TWI860460B (zh) 2024-11-01

Family

ID=77808953

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110108573A TWI860460B (zh) 2020-03-24 2021-03-10 氣體檢查方法、基板處理方法及基板處理系統

Country Status (5)

Country Link
US (1) US11644121B2 (https=)
JP (1) JP7398306B2 (https=)
KR (1) KR20210119295A (https=)
CN (1) CN113451173B (https=)
TW (1) TWI860460B (https=)

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JP7432400B2 (ja) * 2020-03-11 2024-02-16 東京エレクトロン株式会社 基板処理方法及び基板処理システム
US12068422B2 (en) * 2021-10-08 2024-08-20 Simmonds Precision Products, Inc. Systems and methods for cooling electronics
CN117732749A (zh) * 2022-09-13 2024-03-22 京元电子股份有限公司 测试系统及其测试装置与测试方法
CN116659630B (zh) * 2023-07-27 2023-10-03 南京天梯自动化设备股份有限公司 基于雷诺数补偿的质量流量计标准表在线检定系统

Citations (4)

* Cited by examiner, † Cited by third party
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WO2010032805A1 (ja) * 2008-09-17 2010-03-25 アークレイ株式会社 流量センサおよびこれを備えた分析装置
US8381755B2 (en) * 2007-12-11 2013-02-26 Fujikin Incorporated Pressure type flow rate control reference and corrosion resistant pressure type flow rate controller used for the same
JP2017059200A (ja) * 2015-09-16 2017-03-23 東京エレクトロン株式会社 ガス供給系を検査する方法
US20190354120A1 (en) * 2018-05-18 2019-11-21 Horiba Stec, Co., Ltd. Fluid control device and flow rate ratio control device

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JP3180890B2 (ja) * 1995-04-30 2001-06-25 東京瓦斯株式会社 調節弁の遠隔監視装置
JP3932389B2 (ja) * 1998-01-19 2007-06-20 Ｓｍｃ株式会社 マスフローコントローラの自己診断方法
JP4634964B2 (ja) * 2006-05-02 2011-02-16 東邦瓦斯株式会社 発電システムの異常診断装置
JP5873681B2 (ja) * 2011-10-14 2016-03-01 株式会社堀場エステック 流量制御装置、流量制御装置に用いられる診断装置及び診断用プログラム
JP5976611B2 (ja) * 2013-08-27 2016-08-23 愛三工業株式会社 圧力調整弁
JP6517685B2 (ja) * 2015-12-22 2019-05-22 東芝メモリ株式会社 メモリシステムおよび制御方法
JP6892687B2 (ja) 2015-12-25 2021-06-23 株式会社フジキン 流量制御装置および流量制御装置を用いる異常検知方法
KR20170076987A (ko) * 2015-12-26 2017-07-05 박대순 전압과 압력을 이용한 유량제어기의 오작동 감지 시스템
JP6654521B2 (ja) * 2016-07-15 2020-02-26 日立建機株式会社 建設機械
JP6811147B2 (ja) * 2017-06-23 2021-01-13 東京エレクトロン株式会社 ガス供給系を検査する方法
JP7042134B2 (ja) * 2018-03-29 2022-03-25 東京エレクトロン株式会社 基板処理システム及びガスの流量を求める方法
KR102260747B1 (ko) * 2018-03-29 2021-06-07 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 제어 시스템 및 반도체 장치의 제조 방법
JP7398886B2 (ja) * 2018-07-02 2023-12-15 東京エレクトロン株式会社 流量制御器、ガス供給系及び流量制御方法
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8381755B2 (en) * 2007-12-11 2013-02-26 Fujikin Incorporated Pressure type flow rate control reference and corrosion resistant pressure type flow rate controller used for the same
WO2010032805A1 (ja) * 2008-09-17 2010-03-25 アークレイ株式会社 流量センサおよびこれを備えた分析装置
JP2017059200A (ja) * 2015-09-16 2017-03-23 東京エレクトロン株式会社 ガス供給系を検査する方法
US20190354120A1 (en) * 2018-05-18 2019-11-21 Horiba Stec, Co., Ltd. Fluid control device and flow rate ratio control device

Also Published As

Publication number Publication date
US11644121B2 (en) 2023-05-09
JP7398306B2 (ja) 2023-12-14
CN113451173B (zh) 2025-09-02
CN113451173A (zh) 2021-09-28
US20210301942A1 (en) 2021-09-30
JP2021152705A (ja) 2021-09-30
TW202146856A (zh) 2021-12-16
KR20210119295A (ko) 2021-10-05

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