TWI853922B - 低電感元件及用於形成低電感元件之方法 - Google Patents
低電感元件及用於形成低電感元件之方法 Download PDFInfo
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- TWI853922B TWI853922B TW109113742A TW109113742A TWI853922B TW I853922 B TWI853922 B TW I853922B TW 109113742 A TW109113742 A TW 109113742A TW 109113742 A TW109113742 A TW 109113742A TW I853922 B TWI853922 B TW I853922B
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- 238000000034 method Methods 0.000 title claims description 16
- 239000003990 capacitor Substances 0.000 claims abstract description 80
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 238000010586 diagram Methods 0.000 description 12
- 239000000919 ceramic Substances 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 7
- 239000000654 additive Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910000990 Ni alloy Inorganic materials 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- VKJLWXGJGDEGSO-UHFFFAOYSA-N barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Ba+2] VKJLWXGJGDEGSO-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C10/00—Adjustable resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/1013—Thin film varistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
- H01G4/385—Single unit multiple capacitors, e.g. dual capacitor in one coil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Thermistors And Varistors (AREA)
- Ceramic Capacitors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962838421P | 2019-04-25 | 2019-04-25 | |
| US62/838,421 | 2019-04-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202109579A TW202109579A (zh) | 2021-03-01 |
| TWI853922B true TWI853922B (zh) | 2024-09-01 |
Family
ID=72916567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109113742A TWI853922B (zh) | 2019-04-25 | 2020-04-24 | 低電感元件及用於形成低電感元件之方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US11621129B2 (https=) |
| JP (2) | JP2022541973A (https=) |
| KR (1) | KR102791694B1 (https=) |
| CN (2) | CN116864314A (https=) |
| DE (1) | DE112020002057T5 (https=) |
| TW (1) | TWI853922B (https=) |
| WO (1) | WO2020219359A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12148575B2 (en) | 2019-04-25 | 2024-11-19 | KYOCERA AVX Components Corporation | Integrated component including a capacitor and discrete varistor |
| KR102880979B1 (ko) * | 2021-12-24 | 2025-11-04 | 삼성전기주식회사 | 적층형 전자 부품 |
Citations (3)
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| KR20100066080A (ko) * | 2008-12-09 | 2010-06-17 | 삼화콘덴서공업주식회사 | Ｍｌｃｃ 모듈 |
| TW201535444A (zh) * | 2013-10-01 | 2015-09-16 | Samsung Electro Mech | 多層陶瓷電容器及具有該多層陶瓷電容器的板件 |
| US20180226194A1 (en) * | 2017-02-06 | 2018-08-09 | Avx Corporation | Integrated Capacitor Filter and Integrated Capacitor Filter with Varistor Function |
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| US2137809A (en) * | 1937-07-31 | 1938-11-22 | Bell Telephone Labor Inc | Terminal connection for electrical devices |
| JPS55179032U (https=) * | 1979-06-11 | 1980-12-23 | ||
| US4475143A (en) | 1983-01-10 | 1984-10-02 | Rogers Corporation | Decoupling capacitor and method of manufacture thereof |
| JPS61158940U (https=) * | 1985-03-23 | 1986-10-02 | ||
| JPS62204316U (https=) * | 1986-06-16 | 1987-12-26 | ||
| JPH0184423U (https=) * | 1987-11-27 | 1989-06-05 | ||
| US4853826A (en) | 1988-08-01 | 1989-08-01 | Rogers Corporation | Low inductance decoupling capacitor |
| JP2795715B2 (ja) * | 1989-02-21 | 1998-09-10 | タツタ電線株式会社 | プリント配線基板 |
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| WO2000055875A1 (en) | 1999-03-16 | 2000-09-21 | Maxwell Energy Products | Low inductance four terminal capacitor lead frame |
| JP2000299249A (ja) * | 1999-04-14 | 2000-10-24 | Maruwa Kck:Kk | 積層コンデンサおよびその製造方法 |
| JP2001189233A (ja) * | 1999-12-28 | 2001-07-10 | Murata Mfg Co Ltd | 積層コンデンサ |
| US8045319B2 (en) * | 2007-06-13 | 2011-10-25 | Avx Corporation | Controlled ESR decoupling capacitor |
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| JP5708586B2 (ja) * | 2012-07-26 | 2015-04-30 | 株式会社村田製作所 | 積層セラミック電子部品およびその製造方法 |
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-
2020
- 2020-04-16 US US16/850,153 patent/US11621129B2/en active Active
- 2020-04-17 CN CN202310827669.7A patent/CN116864314A/zh active Pending
- 2020-04-17 CN CN202080030095.5A patent/CN113711323A/zh active Pending
- 2020-04-17 WO PCT/US2020/028748 patent/WO2020219359A1/en not_active Ceased
- 2020-04-17 DE DE112020002057.6T patent/DE112020002057T5/de active Pending
- 2020-04-17 KR KR1020217032360A patent/KR102791694B1/ko active Active
- 2020-04-17 JP JP2021563204A patent/JP2022541973A/ja active Pending
- 2020-04-24 TW TW109113742A patent/TWI853922B/zh active
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2023
- 2023-04-03 US US18/194,675 patent/US12051548B2/en active Active
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2024
- 2024-03-19 JP JP2024043893A patent/JP2024073627A/ja active Pending
Patent Citations (4)
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| KR20100066080A (ko) * | 2008-12-09 | 2010-06-17 | 삼화콘덴서공업주식회사 | Ｍｌｃｃ 모듈 |
| TW201535444A (zh) * | 2013-10-01 | 2015-09-16 | Samsung Electro Mech | 多層陶瓷電容器及具有該多層陶瓷電容器的板件 |
| US20180226194A1 (en) * | 2017-02-06 | 2018-08-09 | Avx Corporation | Integrated Capacitor Filter and Integrated Capacitor Filter with Varistor Function |
| WO2018144987A1 (en) * | 2017-02-06 | 2018-08-09 | Avx Corporation | Integrated capacitor filter and integrated capacitor filter with varistor function |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113711323A (zh) | 2021-11-26 |
| US12051548B2 (en) | 2024-07-30 |
| WO2020219359A1 (en) | 2020-10-29 |
| KR20210146321A (ko) | 2021-12-03 |
| TW202109579A (zh) | 2021-03-01 |
| JP2024073627A (ja) | 2024-05-29 |
| JP2022541973A (ja) | 2022-09-29 |
| US20200343050A1 (en) | 2020-10-29 |
| KR102791694B1 (ko) | 2025-04-07 |
| CN116864314A (zh) | 2023-10-10 |
| US11621129B2 (en) | 2023-04-04 |
| US20230238186A1 (en) | 2023-07-27 |
| DE112020002057T5 (de) | 2022-01-27 |
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