TWI849469B - 電漿處理裝置用保護皮膜之洗淨方法 - Google Patents

電漿處理裝置用保護皮膜之洗淨方法 Download PDF

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Publication number
TWI849469B
TWI849469B TW111129529A TW111129529A TWI849469B TW I849469 B TWI849469 B TW I849469B TW 111129529 A TW111129529 A TW 111129529A TW 111129529 A TW111129529 A TW 111129529A TW I849469 B TWI849469 B TW I849469B
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TW
Taiwan
Prior art keywords
cleaning
plasma
film
protective film
processing
Prior art date
Application number
TW111129529A
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English (en)
Chinese (zh)
Other versions
TW202309976A (zh
Inventor
上田和浩
池永和幸
Original Assignee
日商日立全球先端科技股份有限公司
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Application filed by 日商日立全球先端科技股份有限公司 filed Critical 日商日立全球先端科技股份有限公司
Publication of TW202309976A publication Critical patent/TW202309976A/zh
Application granted granted Critical
Publication of TWI849469B publication Critical patent/TWI849469B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3151—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW111129529A 2021-08-23 2022-08-05 電漿處理裝置用保護皮膜之洗淨方法 TWI849469B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2021/030850 2021-08-23
PCT/JP2021/030850 WO2023026331A1 (ja) 2021-08-23 2021-08-23 プラズマ処理装置用保護皮膜の洗浄方法

Publications (2)

Publication Number Publication Date
TW202309976A TW202309976A (zh) 2023-03-01
TWI849469B true TWI849469B (zh) 2024-07-21

Family

ID=85321630

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111129529A TWI849469B (zh) 2021-08-23 2022-08-05 電漿處理裝置用保護皮膜之洗淨方法

Country Status (6)

Country Link
US (1) US12437978B2 (enExample)
JP (1) JP7358655B2 (enExample)
KR (1) KR102709625B1 (enExample)
CN (1) CN116018669B (enExample)
TW (1) TWI849469B (enExample)
WO (1) WO2023026331A1 (enExample)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101218375A (zh) * 2005-07-14 2008-07-09 国立大学法人东北大学 多层构造体及其清洗方法
JP2009174000A (ja) * 2008-01-24 2009-08-06 Shin Etsu Chem Co Ltd セラミックス溶射部材及びその製造方法ならびにセラミックス溶射部材用研磨メディア
US20170029628A1 (en) * 2015-07-31 2017-02-02 Shin-Etsu Chemical Co., Ltd. Yttrium-base sprayed coating and making method
TW201817915A (zh) * 2016-10-13 2018-05-16 美商應用材料股份有限公司 氧化釔至氟化釔及氧氟化釔的化學轉化以開發供電漿組件用之預調抗腐蝕塗層
TW202116996A (zh) * 2019-09-09 2021-05-01 日商富士軟片股份有限公司 處理液、試劑盒、處理液的製造方法、基板的清洗方法、基板的處理方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009176787A (ja) 2008-01-22 2009-08-06 Hitachi High-Technologies Corp エッチング処理装置及びエッチング処理室用部材
JP5530794B2 (ja) * 2010-04-28 2014-06-25 株式会社日立ハイテクノロジーズ 真空処理装置及びプラズマ処理方法
JP2012222225A (ja) * 2011-04-12 2012-11-12 Hitachi High-Technologies Corp プラズマ処理装置
JP5750496B2 (ja) * 2013-12-11 2015-07-22 株式会社日立ハイテクノロジーズ プラズマ処理方法
US9999907B2 (en) * 2016-04-01 2018-06-19 Applied Materials, Inc. Cleaning process that precipitates yttrium oxy-flouride
JP7122854B2 (ja) * 2018-04-20 2022-08-22 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理装置用部材、またはプラズマ処理装置の製造方法およびプラズマ処理装置用部材の製造方法
CN111436219B (zh) * 2018-11-14 2023-09-19 株式会社日立高新技术 等离子处理装置以及利用其的被处理样品的处理方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101218375A (zh) * 2005-07-14 2008-07-09 国立大学法人东北大学 多层构造体及其清洗方法
JP2009174000A (ja) * 2008-01-24 2009-08-06 Shin Etsu Chem Co Ltd セラミックス溶射部材及びその製造方法ならびにセラミックス溶射部材用研磨メディア
US20170029628A1 (en) * 2015-07-31 2017-02-02 Shin-Etsu Chemical Co., Ltd. Yttrium-base sprayed coating and making method
TW201817915A (zh) * 2016-10-13 2018-05-16 美商應用材料股份有限公司 氧化釔至氟化釔及氧氟化釔的化學轉化以開發供電漿組件用之預調抗腐蝕塗層
TW202116996A (zh) * 2019-09-09 2021-05-01 日商富士軟片股份有限公司 處理液、試劑盒、處理液的製造方法、基板的清洗方法、基板的處理方法

Also Published As

Publication number Publication date
KR20230031187A (ko) 2023-03-07
US20240203708A1 (en) 2024-06-20
JPWO2023026331A1 (enExample) 2023-03-02
CN116018669A (zh) 2023-04-25
TW202309976A (zh) 2023-03-01
US12437978B2 (en) 2025-10-07
CN116018669B (zh) 2025-09-19
WO2023026331A1 (ja) 2023-03-02
KR102709625B1 (ko) 2024-09-26
JP7358655B2 (ja) 2023-10-10

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