KR102709625B1 - 플라스마 처리 장치용 보호 피막의 세정 방법 - Google Patents

플라스마 처리 장치용 보호 피막의 세정 방법 Download PDF

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Publication number
KR102709625B1
KR102709625B1 KR1020227029775A KR20227029775A KR102709625B1 KR 102709625 B1 KR102709625 B1 KR 102709625B1 KR 1020227029775 A KR1020227029775 A KR 1020227029775A KR 20227029775 A KR20227029775 A KR 20227029775A KR 102709625 B1 KR102709625 B1 KR 102709625B1
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South Korea
Prior art keywords
cleaning
plasma
film
protective film
treatment device
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KR1020227029775A
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English (en)
Korean (ko)
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KR20230031187A (ko
Inventor
가즈히로 우에다
가즈유키 이케나가
Original Assignee
주식회사 히타치하이테크
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853Hygiene
    • H01J37/32862In situ cleaning of vessels and/or internal parts
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/10Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32477Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495Means for protecting the vessel against plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/31Processing objects on a macro-scale
    • H01J2237/3151Etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020227029775A 2021-08-23 2021-08-23 플라스마 처리 장치용 보호 피막의 세정 방법 Active KR102709625B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/030850 WO2023026331A1 (ja) 2021-08-23 2021-08-23 プラズマ処理装置用保護皮膜の洗浄方法

Publications (2)

Publication Number Publication Date
KR20230031187A KR20230031187A (ko) 2023-03-07
KR102709625B1 true KR102709625B1 (ko) 2024-09-26

Family

ID=85321630

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227029775A Active KR102709625B1 (ko) 2021-08-23 2021-08-23 플라스마 처리 장치용 보호 피막의 세정 방법

Country Status (6)

Country Link
US (1) US12437978B2 (enExample)
JP (1) JP7358655B2 (enExample)
KR (1) KR102709625B1 (enExample)
CN (1) CN116018669B (enExample)
TW (1) TWI849469B (enExample)
WO (1) WO2023026331A1 (enExample)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007007782A1 (ja) 2005-07-14 2007-01-18 Tohoku University 多層構造体及びその洗浄方法
JP2009174000A (ja) 2008-01-24 2009-08-06 Shin Etsu Chem Co Ltd セラミックス溶射部材及びその製造方法ならびにセラミックス溶射部材用研磨メディア
JP2017031457A (ja) 2015-07-31 2017-02-09 信越化学工業株式会社 イットリウム系溶射皮膜、及びその製造方法
JP2019519091A (ja) 2016-04-01 2019-07-04 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated オキシフッ化物を沈殿させるクリーニングプロセス

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009176787A (ja) 2008-01-22 2009-08-06 Hitachi High-Technologies Corp エッチング処理装置及びエッチング処理室用部材
JP5530794B2 (ja) * 2010-04-28 2014-06-25 株式会社日立ハイテクノロジーズ 真空処理装置及びプラズマ処理方法
JP2012222225A (ja) * 2011-04-12 2012-11-12 Hitachi High-Technologies Corp プラズマ処理装置
JP5750496B2 (ja) * 2013-12-11 2015-07-22 株式会社日立ハイテクノロジーズ プラズマ処理方法
TWI721216B (zh) 2016-10-13 2021-03-11 美商應用材料股份有限公司 用於電漿處理裝置中的腔室部件、包含其之裝置及製造其之方法
JP7122854B2 (ja) * 2018-04-20 2022-08-22 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理装置用部材、またはプラズマ処理装置の製造方法およびプラズマ処理装置用部材の製造方法
US11276579B2 (en) * 2018-11-14 2022-03-15 Hitachi High-Tech Corporation Substrate processing method and plasma processing apparatus
CN118931672A (zh) 2019-09-09 2024-11-12 富士胶片株式会社 处理液、试剂盒、处理液的制造方法、基板的清洗方法、基板的处理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007007782A1 (ja) 2005-07-14 2007-01-18 Tohoku University 多層構造体及びその洗浄方法
JP2009174000A (ja) 2008-01-24 2009-08-06 Shin Etsu Chem Co Ltd セラミックス溶射部材及びその製造方法ならびにセラミックス溶射部材用研磨メディア
JP2017031457A (ja) 2015-07-31 2017-02-09 信越化学工業株式会社 イットリウム系溶射皮膜、及びその製造方法
JP2019519091A (ja) 2016-04-01 2019-07-04 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated オキシフッ化物を沈殿させるクリーニングプロセス

Also Published As

Publication number Publication date
JP7358655B2 (ja) 2023-10-10
CN116018669B (zh) 2025-09-19
WO2023026331A1 (ja) 2023-03-02
TW202309976A (zh) 2023-03-01
JPWO2023026331A1 (enExample) 2023-03-02
CN116018669A (zh) 2023-04-25
US20240203708A1 (en) 2024-06-20
TWI849469B (zh) 2024-07-21
KR20230031187A (ko) 2023-03-07
US12437978B2 (en) 2025-10-07

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