KR102709625B1 - 플라스마 처리 장치용 보호 피막의 세정 방법 - Google Patents
플라스마 처리 장치용 보호 피막의 세정 방법 Download PDFInfo
- Publication number
- KR102709625B1 KR102709625B1 KR1020227029775A KR20227029775A KR102709625B1 KR 102709625 B1 KR102709625 B1 KR 102709625B1 KR 1020227029775 A KR1020227029775 A KR 1020227029775A KR 20227029775 A KR20227029775 A KR 20227029775A KR 102709625 B1 KR102709625 B1 KR 102709625B1
- Authority
- KR
- South Korea
- Prior art keywords
- cleaning
- plasma
- film
- protective film
- treatment device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3151—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/030850 WO2023026331A1 (ja) | 2021-08-23 | 2021-08-23 | プラズマ処理装置用保護皮膜の洗浄方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20230031187A KR20230031187A (ko) | 2023-03-07 |
| KR102709625B1 true KR102709625B1 (ko) | 2024-09-26 |
Family
ID=85321630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020227029775A Active KR102709625B1 (ko) | 2021-08-23 | 2021-08-23 | 플라스마 처리 장치용 보호 피막의 세정 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12437978B2 (enExample) |
| JP (1) | JP7358655B2 (enExample) |
| KR (1) | KR102709625B1 (enExample) |
| CN (1) | CN116018669B (enExample) |
| TW (1) | TWI849469B (enExample) |
| WO (1) | WO2023026331A1 (enExample) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007007782A1 (ja) | 2005-07-14 | 2007-01-18 | Tohoku University | 多層構造体及びその洗浄方法 |
| JP2009174000A (ja) | 2008-01-24 | 2009-08-06 | Shin Etsu Chem Co Ltd | セラミックス溶射部材及びその製造方法ならびにセラミックス溶射部材用研磨メディア |
| JP2017031457A (ja) | 2015-07-31 | 2017-02-09 | 信越化学工業株式会社 | イットリウム系溶射皮膜、及びその製造方法 |
| JP2019519091A (ja) | 2016-04-01 | 2019-07-04 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | オキシフッ化物を沈殿させるクリーニングプロセス |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009176787A (ja) | 2008-01-22 | 2009-08-06 | Hitachi High-Technologies Corp | エッチング処理装置及びエッチング処理室用部材 |
| JP5530794B2 (ja) * | 2010-04-28 | 2014-06-25 | 株式会社日立ハイテクノロジーズ | 真空処理装置及びプラズマ処理方法 |
| JP2012222225A (ja) * | 2011-04-12 | 2012-11-12 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| JP5750496B2 (ja) * | 2013-12-11 | 2015-07-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| TWI721216B (zh) | 2016-10-13 | 2021-03-11 | 美商應用材料股份有限公司 | 用於電漿處理裝置中的腔室部件、包含其之裝置及製造其之方法 |
| JP7122854B2 (ja) * | 2018-04-20 | 2022-08-22 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理装置用部材、またはプラズマ処理装置の製造方法およびプラズマ処理装置用部材の製造方法 |
| US11276579B2 (en) * | 2018-11-14 | 2022-03-15 | Hitachi High-Tech Corporation | Substrate processing method and plasma processing apparatus |
| CN118931672A (zh) | 2019-09-09 | 2024-11-12 | 富士胶片株式会社 | 处理液、试剂盒、处理液的制造方法、基板的清洗方法、基板的处理方法 |
-
2021
- 2021-08-23 KR KR1020227029775A patent/KR102709625B1/ko active Active
- 2021-08-23 US US17/802,639 patent/US12437978B2/en active Active
- 2021-08-23 JP JP2022551293A patent/JP7358655B2/ja active Active
- 2021-08-23 WO PCT/JP2021/030850 patent/WO2023026331A1/ja not_active Ceased
- 2021-08-23 CN CN202180017270.1A patent/CN116018669B/zh active Active
-
2022
- 2022-08-05 TW TW111129529A patent/TWI849469B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007007782A1 (ja) | 2005-07-14 | 2007-01-18 | Tohoku University | 多層構造体及びその洗浄方法 |
| JP2009174000A (ja) | 2008-01-24 | 2009-08-06 | Shin Etsu Chem Co Ltd | セラミックス溶射部材及びその製造方法ならびにセラミックス溶射部材用研磨メディア |
| JP2017031457A (ja) | 2015-07-31 | 2017-02-09 | 信越化学工業株式会社 | イットリウム系溶射皮膜、及びその製造方法 |
| JP2019519091A (ja) | 2016-04-01 | 2019-07-04 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | オキシフッ化物を沈殿させるクリーニングプロセス |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7358655B2 (ja) | 2023-10-10 |
| CN116018669B (zh) | 2025-09-19 |
| WO2023026331A1 (ja) | 2023-03-02 |
| TW202309976A (zh) | 2023-03-01 |
| JPWO2023026331A1 (enExample) | 2023-03-02 |
| CN116018669A (zh) | 2023-04-25 |
| US20240203708A1 (en) | 2024-06-20 |
| TWI849469B (zh) | 2024-07-21 |
| KR20230031187A (ko) | 2023-03-07 |
| US12437978B2 (en) | 2025-10-07 |
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| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
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| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
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| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
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| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
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| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
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| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
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| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
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| PR1002 | Payment of registration fee |
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