TWI842259B - 電力轉換裝置 - Google Patents
電力轉換裝置 Download PDFInfo
- Publication number
- TWI842259B TWI842259B TW111147085A TW111147085A TWI842259B TW I842259 B TWI842259 B TW I842259B TW 111147085 A TW111147085 A TW 111147085A TW 111147085 A TW111147085 A TW 111147085A TW I842259 B TWI842259 B TW I842259B
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- conversion device
- signal
- power conversion
- voltage
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 43
- 238000012544 monitoring process Methods 0.000 claims abstract description 9
- 230000005856 abnormality Effects 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 16
- 230000002159 abnormal effect Effects 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 2
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 2
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022005374 | 2022-01-17 | ||
| JP2022-005374 | 2022-01-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202331282A TW202331282A (zh) | 2023-08-01 |
| TWI842259B true TWI842259B (zh) | 2024-05-11 |
Family
ID=87278762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111147085A TWI842259B (zh) | 2022-01-17 | 2022-12-08 | 電力轉換裝置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7635436B2 (https=) |
| TW (1) | TWI842259B (https=) |
| WO (1) | WO2023135901A1 (https=) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201834397A (zh) * | 2016-12-07 | 2018-09-16 | 日商瑞薩電子股份有限公司 | 半導體裝置及功率轉換裝置 |
| TW201841470A (zh) * | 2016-12-27 | 2018-11-16 | 日商瑞薩電子股份有限公司 | 半導體裝置及電力轉換裝置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3931627B2 (ja) * | 2001-11-01 | 2007-06-20 | 株式会社日立製作所 | 半導体スイッチング素子のゲート駆動装置 |
| JP5664350B2 (ja) * | 2011-03-07 | 2015-02-04 | 株式会社デンソー | スイッチング素子の駆動回路 |
| JP5911014B2 (ja) * | 2012-05-24 | 2016-04-27 | 三菱電機株式会社 | インバータ装置およびインバータ装置の異常検出方法 |
| WO2021241137A1 (ja) * | 2020-05-27 | 2021-12-02 | 株式会社日立製作所 | 故障検知装置及びその方法 |
-
2022
- 2022-10-28 WO PCT/JP2022/040359 patent/WO2023135901A1/ja not_active Ceased
- 2022-10-28 JP JP2023573854A patent/JP7635436B2/ja active Active
- 2022-12-08 TW TW111147085A patent/TWI842259B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201834397A (zh) * | 2016-12-07 | 2018-09-16 | 日商瑞薩電子股份有限公司 | 半導體裝置及功率轉換裝置 |
| TW201841470A (zh) * | 2016-12-27 | 2018-11-16 | 日商瑞薩電子股份有限公司 | 半導體裝置及電力轉換裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202331282A (zh) | 2023-08-01 |
| JPWO2023135901A1 (https=) | 2023-07-20 |
| WO2023135901A1 (ja) | 2023-07-20 |
| JP7635436B2 (ja) | 2025-02-25 |
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