TWI841980B - 濺鍍靶及濺鍍靶之製造方法 - Google Patents

濺鍍靶及濺鍍靶之製造方法 Download PDF

Info

Publication number
TWI841980B
TWI841980B TW111121660A TW111121660A TWI841980B TW I841980 B TWI841980 B TW I841980B TW 111121660 A TW111121660 A TW 111121660A TW 111121660 A TW111121660 A TW 111121660A TW I841980 B TWI841980 B TW I841980B
Authority
TW
Taiwan
Prior art keywords
component
target
sputtering target
substrate
constituent member
Prior art date
Application number
TW111121660A
Other languages
English (en)
Chinese (zh)
Other versions
TW202307238A (zh
Inventor
村田周平
岩渕将也
佐藤祐介
Original Assignee
日商Ｊｘ金屬股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｊｘ金屬股份有限公司 filed Critical 日商Ｊｘ金屬股份有限公司
Publication of TW202307238A publication Critical patent/TW202307238A/zh
Application granted granted Critical
Publication of TWI841980B publication Critical patent/TWI841980B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C14/00—Alloys based on titanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
    • C22F1/047—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon of alloys with magnesium as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon
    • C22F1/183—High-melting or refractory metals or alloys based thereon of titanium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • B22F2003/153—Hot isostatic pressing apparatus specific to HIP
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/34—Coated articles ; Surface treated articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/18—Dissimilar materials
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C22C21/06—Alloys based on aluminium with magnesium as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
TW111121660A 2021-08-11 2022-06-10 濺鍍靶及濺鍍靶之製造方法 TWI841980B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021131384 2021-08-11
JP2021-131384 2021-08-11

Publications (2)

Publication Number Publication Date
TW202307238A TW202307238A (zh) 2023-02-16
TWI841980B true TWI841980B (zh) 2024-05-11

Family

ID=85199733

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111121660A TWI841980B (zh) 2021-08-11 2022-06-10 濺鍍靶及濺鍍靶之製造方法

Country Status (8)

Country Link
US (1) US12234544B2 (https=)
EP (1) EP4386108A4 (https=)
JP (1) JP7551893B2 (https=)
KR (1) KR102870278B1 (https=)
CN (1) CN116261605B (https=)
IL (1) IL301507A (https=)
TW (1) TWI841980B (https=)
WO (1) WO2023017667A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102901902B1 (ko) * 2023-05-26 2025-12-19 제엠제코(주) 금속 클립 구조체 및 이를 구비한 반도체 패키지

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090078570A1 (en) * 2003-08-11 2009-03-26 Wuwen Yi Target/backing plate constructions, and methods of forming target/backing plate constructions
CN107614744A (zh) * 2015-12-28 2018-01-19 Ｊｘ金属株式会社 溅射靶的制造方法
TW201812060A (zh) * 2016-07-13 2018-04-01 住友化學股份有限公司 濺鍍靶之製造方法及濺鍍靶
CN109804096A (zh) * 2016-09-30 2019-05-24 霍尼韦尔国际公司 高强度铝合金背板及制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3469261B2 (ja) 1992-12-07 2003-11-25 株式会社ジャパンエナジー 拡散接合されたスパッタリングターゲット組立体及びその製造方法
US5693203A (en) 1992-09-29 1997-12-02 Japan Energy Corporation Sputtering target assembly having solid-phase bonded interface
JP3866320B2 (ja) 1995-02-09 2007-01-10 日本碍子株式会社 接合体、および接合体の製造方法
JP3829367B2 (ja) * 1996-08-02 2006-10-04 東ソー株式会社 スパッタリングターゲット
US5993621A (en) 1997-07-11 1999-11-30 Johnson Matthey Electronics, Inc. Titanium sputtering target
JPH1177365A (ja) 1997-07-18 1999-03-23 Kobe Steel Ltd ＴｉＡｌ系金属間化合物とＴｉ基合金を接合するためのインサート材およびその接合方法、並びに接合体
JPH11236665A (ja) * 1998-02-20 1999-08-31 Japan Energy Corp スパッタリングタ−ゲット用バッキングプレ−ト及びスパッタリングタ−ゲット／バッキングプレ−ト組立体
US6113761A (en) 1999-06-02 2000-09-05 Johnson Matthey Electronics, Inc. Copper sputtering target assembly and method of making same
KR20020068535A (ko) 1999-11-22 2002-08-27 가부시키 가이샤 닛코 마테리알즈 스퍼터링용 티타늄 타겟트
JP3905295B2 (ja) 2000-10-02 2007-04-18 日鉱金属株式会社 高純度コバルトターゲットと銅合金製バッキングプレートとの拡散接合ターゲット組立体及びその製造方法
JP2002294437A (ja) * 2001-04-02 2002-10-09 Mitsubishi Materials Corp 銅合金スパッタリングターゲット
JP2002294440A (ja) * 2001-04-03 2002-10-09 Sumitomo Chem Co Ltd スパッタリング用ターゲットとその製造方法
JP5144576B2 (ja) 2009-03-31 2013-02-13 Ｊｘ日鉱日石金属株式会社 スパッタリング用チタンターゲット
SG189977A1 (en) * 2010-10-27 2013-06-28 Jx Nippon Mining & Metals Corp Sputtering target backing plate assembly and method for producing same
CN111989421B (zh) * 2018-05-21 2022-12-06 株式会社爱发科 溅射靶材及其制造方法
CN113272468B (zh) 2019-03-28 2023-08-25 Ｊｘ金属株式会社 溅射靶制品以及溅射靶制品的再生品的制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090078570A1 (en) * 2003-08-11 2009-03-26 Wuwen Yi Target/backing plate constructions, and methods of forming target/backing plate constructions
CN107614744A (zh) * 2015-12-28 2018-01-19 Ｊｘ金属株式会社 溅射靶的制造方法
TW201812060A (zh) * 2016-07-13 2018-04-01 住友化學股份有限公司 濺鍍靶之製造方法及濺鍍靶
CN109804096A (zh) * 2016-09-30 2019-05-24 霍尼韦尔国际公司 高强度铝合金背板及制备方法

Also Published As

Publication number Publication date
US20240026525A1 (en) 2024-01-25
CN116261605A (zh) 2023-06-13
WO2023017667A1 (ja) 2023-02-16
JPWO2023017667A1 (https=) 2023-02-16
EP4386108A4 (en) 2025-06-18
KR102870278B1 (ko) 2025-10-15
CN116261605B (zh) 2025-04-25
KR20230035626A (ko) 2023-03-14
TW202307238A (zh) 2023-02-16
IL301507A (en) 2023-05-01
JP7551893B2 (ja) 2024-09-17
EP4386108A1 (en) 2024-06-19
US12234544B2 (en) 2025-02-25

Similar Documents

Publication Publication Date Title
TWI695778B (zh) 接合體、附散熱器之電力模組用基板、散熱器、接合體之製造方法、附散熱器之電力模組用基板之製造方法、及散熱器之製造方法
TW200808989A (en) A sputtering target as well as a joined type sputtering target assembly and a method of making such a joined type sputtering target assembly
WO2014046130A1 (ja) アルミニウム部材と銅部材との接合構造
TWI841980B (zh) 濺鍍靶及濺鍍靶之製造方法
JP4594488B2 (ja) スパッタリングターゲット
JP3525348B2 (ja) 拡散接合されたスパッタリングターゲット組立体の製造方法
JPS60166165A (ja) 窒化物系セラミックスと金属との接合方法
JP2009094385A (ja) 半導体装置およびその製造方法
US6723213B2 (en) Titanium target assembly for sputtering and method for preparing the same
JP3469261B2 (ja) 拡散接合されたスパッタリングターゲット組立体及びその製造方法
WO2024242079A1 (ja) ターゲット組立体およびターゲット組立体の製造方法
WO2025018350A1 (ja) 銅アルミニウムクラッド材の製造方法、ヒートシンクの製造方法、銅アルミニウムクラッド材及びヒートシンク
JP2020150254A (ja) 放熱板材
JP3302714B2 (ja) セラミックス−金属接合体
TWI899765B (zh) 濺鍍靶材總成及其形成方法
US20250327172A1 (en) Cobalt-titanium alloy sputtering target assembly and method of making
WO2025174763A1 (en) Molybdenum sputtering target with high transverse rupture strength
TWI697372B (zh) 硬銲接合方法
US20240229225A1 (en) Diffusion bonded tungsten containing target to copper alloy backing plate
TW202607167A (zh) 鈷鈦合金濺鍍靶材總成及其製造方法
TW202609090A (zh) 鈷鉭合金濺鍍靶材總成及其製造方法
JP4333634B2 (ja) シリコンウェハーの接合方法
JP2019145604A (ja) ヒートシンク付パワーモジュール用基板の製造方法
JPH05129348A (ja) 半導体装置用はんだ箔及びその製造方法