TWI839042B - 蝕刻方法 - Google Patents

蝕刻方法 Download PDF

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Publication number
TWI839042B
TWI839042B TW111149910A TW111149910A TWI839042B TW I839042 B TWI839042 B TW I839042B TW 111149910 A TW111149910 A TW 111149910A TW 111149910 A TW111149910 A TW 111149910A TW I839042 B TWI839042 B TW I839042B
Authority
TW
Taiwan
Prior art keywords
etching
atoms
molecule
compound
hydrogen
Prior art date
Application number
TW111149910A
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English (en)
Chinese (zh)
Other versions
TW202336857A (zh
Inventor
鈴木淳
Original Assignee
日商力森諾科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商力森諾科股份有限公司 filed Critical 日商力森諾科股份有限公司
Publication of TW202336857A publication Critical patent/TW202336857A/zh
Application granted granted Critical
Publication of TWI839042B publication Critical patent/TWI839042B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Magnetic Heads (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
TW111149910A 2022-02-16 2022-12-26 蝕刻方法 TWI839042B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022022023 2022-02-16
JP2022-022023 2022-02-16

Publications (2)

Publication Number Publication Date
TW202336857A TW202336857A (zh) 2023-09-16
TWI839042B true TWI839042B (zh) 2024-04-11

Family

ID=87577943

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111149910A TWI839042B (zh) 2022-02-16 2022-12-26 蝕刻方法

Country Status (7)

Country Link
US (1) US20250343048A1 (https=)
EP (1) EP4481794A4 (https=)
JP (1) JPWO2023157441A1 (https=)
KR (1) KR20240148841A (https=)
CN (1) CN118679554A (https=)
TW (1) TWI839042B (https=)
WO (1) WO2023157441A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025121211A1 (ja) * 2023-12-04 2025-06-12 株式会社レゾナック エッチング方法
WO2025254850A1 (en) * 2024-06-04 2025-12-11 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Cryogenic etching using sof2 and its family
WO2025254704A1 (en) * 2024-06-04 2025-12-11 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Cryogenic etching using carbon oxy halides
JP7832526B1 (ja) * 2024-09-09 2026-03-18 ダイキン工業株式会社 エッチングガス

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201604956A (zh) * 2014-05-02 2016-02-01 萬國商業機器公司 藉由蝕刻室預處理提升矽蝕刻製程之蝕刻速率

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US153771A (en) 1874-08-04 Improvement in sash-holders
JPH07201812A (ja) * 1994-01-11 1995-08-04 Tadahiro Omi 固体表面処理装置及び処理方法、不動態膜形成装置及び方法、並びにプロセス装置
KR100796067B1 (ko) * 2006-05-09 2008-01-21 울산화학주식회사 반도체 제조용 건식 에칭 개스 및 그의 제조방법
US9401240B2 (en) * 2010-03-01 2016-07-26 California Institute Of Technology Integrated passive iron shims in silicon
JP6788176B2 (ja) * 2015-04-06 2020-11-25 セントラル硝子株式会社 ドライエッチングガスおよびドライエッチング方法
KR102652512B1 (ko) * 2015-11-10 2024-03-28 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 에칭 반응물 및 이를 사용한 플라즈마-부재 옥사이드 에칭 공정
JP6822763B2 (ja) * 2015-11-16 2021-01-27 セントラル硝子株式会社 ドライエッチング方法
JP6867581B2 (ja) * 2016-02-09 2021-04-28 セントラル硝子株式会社 フッ素ガスの精製方法
KR102675453B1 (ko) * 2018-03-29 2024-06-17 샌트랄 글래스 컴퍼니 리미티드 기판 처리용 가스, 보관 용기 및 기판 처리 방법
JPWO2023234305A1 (https=) * 2022-05-31 2023-12-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201604956A (zh) * 2014-05-02 2016-02-01 萬國商業機器公司 藉由蝕刻室預處理提升矽蝕刻製程之蝕刻速率

Also Published As

Publication number Publication date
CN118679554A (zh) 2024-09-20
WO2023157441A1 (ja) 2023-08-24
EP4481794A1 (en) 2024-12-25
TW202336857A (zh) 2023-09-16
JPWO2023157441A1 (https=) 2023-08-24
KR20240148841A (ko) 2024-10-11
EP4481794A4 (en) 2026-02-25
US20250343048A1 (en) 2025-11-06

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