CN118679554A - 蚀刻方法 - Google Patents
蚀刻方法 Download PDFInfo
- Publication number
- CN118679554A CN118679554A CN202280091495.6A CN202280091495A CN118679554A CN 118679554 A CN118679554 A CN 118679554A CN 202280091495 A CN202280091495 A CN 202280091495A CN 118679554 A CN118679554 A CN 118679554A
- Authority
- CN
- China
- Prior art keywords
- etching
- molecule
- compound
- atom
- carbon atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
- H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Magnetic Heads (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022022023 | 2022-02-16 | ||
| JP2022-022023 | 2022-02-16 | ||
| PCT/JP2022/045918 WO2023157441A1 (ja) | 2022-02-16 | 2022-12-13 | エッチング方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118679554A true CN118679554A (zh) | 2024-09-20 |
Family
ID=87577943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280091495.6A Pending CN118679554A (zh) | 2022-02-16 | 2022-12-13 | 蚀刻方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20250343048A1 (https=) |
| EP (1) | EP4481794A4 (https=) |
| JP (1) | JPWO2023157441A1 (https=) |
| KR (1) | KR20240148841A (https=) |
| CN (1) | CN118679554A (https=) |
| TW (1) | TWI839042B (https=) |
| WO (1) | WO2023157441A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025121211A1 (ja) * | 2023-12-04 | 2025-06-12 | 株式会社レゾナック | エッチング方法 |
| WO2025254850A1 (en) * | 2024-06-04 | 2025-12-11 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Cryogenic etching using sof2 and its family |
| WO2025254704A1 (en) * | 2024-06-04 | 2025-12-11 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Cryogenic etching using carbon oxy halides |
| JP7832526B1 (ja) * | 2024-09-09 | 2026-03-18 | ダイキン工業株式会社 | エッチングガス |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US153771A (en) | 1874-08-04 | Improvement in sash-holders | ||
| JPH07201812A (ja) * | 1994-01-11 | 1995-08-04 | Tadahiro Omi | 固体表面処理装置及び処理方法、不動態膜形成装置及び方法、並びにプロセス装置 |
| KR100796067B1 (ko) * | 2006-05-09 | 2008-01-21 | 울산화학주식회사 | 반도체 제조용 건식 에칭 개스 및 그의 제조방법 |
| US9401240B2 (en) * | 2010-03-01 | 2016-07-26 | California Institute Of Technology | Integrated passive iron shims in silicon |
| US9711365B2 (en) * | 2014-05-02 | 2017-07-18 | International Business Machines Corporation | Etch rate enhancement for a silicon etch process through etch chamber pretreatment |
| JP6788176B2 (ja) * | 2015-04-06 | 2020-11-25 | セントラル硝子株式会社 | ドライエッチングガスおよびドライエッチング方法 |
| KR102652512B1 (ko) * | 2015-11-10 | 2024-03-28 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 에칭 반응물 및 이를 사용한 플라즈마-부재 옥사이드 에칭 공정 |
| JP6822763B2 (ja) * | 2015-11-16 | 2021-01-27 | セントラル硝子株式会社 | ドライエッチング方法 |
| JP6867581B2 (ja) * | 2016-02-09 | 2021-04-28 | セントラル硝子株式会社 | フッ素ガスの精製方法 |
| KR102675453B1 (ko) * | 2018-03-29 | 2024-06-17 | 샌트랄 글래스 컴퍼니 리미티드 | 기판 처리용 가스, 보관 용기 및 기판 처리 방법 |
| JPWO2023234305A1 (https=) * | 2022-05-31 | 2023-12-07 |
-
2022
- 2022-12-13 CN CN202280091495.6A patent/CN118679554A/zh active Pending
- 2022-12-13 WO PCT/JP2022/045918 patent/WO2023157441A1/ja not_active Ceased
- 2022-12-13 JP JP2024500975A patent/JPWO2023157441A1/ja active Pending
- 2022-12-13 US US18/839,152 patent/US20250343048A1/en active Pending
- 2022-12-13 EP EP22927327.1A patent/EP4481794A4/en active Pending
- 2022-12-13 KR KR1020247027141A patent/KR20240148841A/ko active Pending
- 2022-12-26 TW TW111149910A patent/TWI839042B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023157441A1 (ja) | 2023-08-24 |
| EP4481794A1 (en) | 2024-12-25 |
| TW202336857A (zh) | 2023-09-16 |
| JPWO2023157441A1 (https=) | 2023-08-24 |
| KR20240148841A (ko) | 2024-10-11 |
| EP4481794A4 (en) | 2026-02-25 |
| US20250343048A1 (en) | 2025-11-06 |
| TWI839042B (zh) | 2024-04-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |