JPWO2023234305A1 - - Google Patents
Info
- Publication number
- JPWO2023234305A1 JPWO2023234305A1 JP2024524878A JP2024524878A JPWO2023234305A1 JP WO2023234305 A1 JPWO2023234305 A1 JP WO2023234305A1 JP 2024524878 A JP2024524878 A JP 2024524878A JP 2024524878 A JP2024524878 A JP 2024524878A JP WO2023234305 A1 JPWO2023234305 A1 JP WO2023234305A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022089058 | 2022-05-31 | ||
| PCT/JP2023/020126 WO2023234305A1 (ja) | 2022-05-31 | 2023-05-30 | エッチング方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023234305A1 true JPWO2023234305A1 (https=) | 2023-12-07 |
Family
ID=89024875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024524878A Pending JPWO2023234305A1 (https=) | 2022-05-31 | 2023-05-30 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250329516A1 (https=) |
| JP (1) | JPWO2023234305A1 (https=) |
| KR (1) | KR20250016115A (https=) |
| TW (1) | TW202407801A (https=) |
| WO (1) | WO2023234305A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118679554A (zh) * | 2022-02-16 | 2024-09-20 | 株式会社力森诺科 | 蚀刻方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8133819B2 (en) * | 2008-02-21 | 2012-03-13 | Applied Materials, Inc. | Plasma etching carbonaceous layers with sulfur-based etchants |
| TWI612182B (zh) * | 2013-09-09 | 2018-01-21 | 液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 用蝕刻氣體蝕刻半導體結構的方法 |
| JP6788176B2 (ja) * | 2015-04-06 | 2020-11-25 | セントラル硝子株式会社 | ドライエッチングガスおよびドライエッチング方法 |
| JP6748354B2 (ja) * | 2015-09-18 | 2020-09-02 | セントラル硝子株式会社 | ドライエッチング方法及びドライエッチング剤 |
-
2023
- 2023-05-30 JP JP2024524878A patent/JPWO2023234305A1/ja active Pending
- 2023-05-30 US US18/868,552 patent/US20250329516A1/en active Pending
- 2023-05-30 WO PCT/JP2023/020126 patent/WO2023234305A1/ja not_active Ceased
- 2023-05-30 KR KR1020247038319A patent/KR20250016115A/ko active Pending
- 2023-05-31 TW TW112120325A patent/TW202407801A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20250016115A (ko) | 2025-02-03 |
| WO2023234305A1 (ja) | 2023-12-07 |
| US20250329516A1 (en) | 2025-10-23 |
| TW202407801A (zh) | 2024-02-16 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20260406 |