KR20250016115A - 에칭 방법 - Google Patents

에칭 방법 Download PDF

Info

Publication number
KR20250016115A
KR20250016115A KR1020247038319A KR20247038319A KR20250016115A KR 20250016115 A KR20250016115 A KR 20250016115A KR 1020247038319 A KR1020247038319 A KR 1020247038319A KR 20247038319 A KR20247038319 A KR 20247038319A KR 20250016115 A KR20250016115 A KR 20250016115A
Authority
KR
South Korea
Prior art keywords
etching
gas
fluorodithiethane
compound
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247038319A
Other languages
English (en)
Korean (ko)
Inventor
카즈마 마츠이
유키 오카
모에 타니와키
Original Assignee
가부시끼가이샤 레조낙
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 레조낙 filed Critical 가부시끼가이샤 레조낙
Publication of KR20250016115A publication Critical patent/KR20250016115A/ko
Pending legal-status Critical Current

Links

Classifications

    • H01L21/3065—
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H01L21/042—
    • H01L21/0475—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020247038319A 2022-05-31 2023-05-30 에칭 방법 Pending KR20250016115A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022089058 2022-05-31
JPJP-P-2022-089058 2022-05-31
PCT/JP2023/020126 WO2023234305A1 (ja) 2022-05-31 2023-05-30 エッチング方法

Publications (1)

Publication Number Publication Date
KR20250016115A true KR20250016115A (ko) 2025-02-03

Family

ID=89024875

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247038319A Pending KR20250016115A (ko) 2022-05-31 2023-05-30 에칭 방법

Country Status (5)

Country Link
US (1) US20250329516A1 (https=)
JP (1) JPWO2023234305A1 (https=)
KR (1) KR20250016115A (https=)
TW (1) TW202407801A (https=)
WO (1) WO2023234305A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118679554A (zh) * 2022-02-16 2024-09-20 株式会社力森诺科 蚀刻方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8133819B2 (en) * 2008-02-21 2012-03-13 Applied Materials, Inc. Plasma etching carbonaceous layers with sulfur-based etchants
TWI612182B (zh) * 2013-09-09 2018-01-21 液態空氣喬治斯克勞帝方法研究開發股份有限公司 用蝕刻氣體蝕刻半導體結構的方法
JP6788176B2 (ja) * 2015-04-06 2020-11-25 セントラル硝子株式会社 ドライエッチングガスおよびドライエッチング方法
JP6748354B2 (ja) * 2015-09-18 2020-09-02 セントラル硝子株式会社 ドライエッチング方法及びドライエッチング剤

Also Published As

Publication number Publication date
WO2023234305A1 (ja) 2023-12-07
US20250329516A1 (en) 2025-10-23
JPWO2023234305A1 (https=) 2023-12-07
TW202407801A (zh) 2024-02-16

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Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000