TWI836083B - 有機電晶體材料及有機電晶體 - Google Patents
有機電晶體材料及有機電晶體 Download PDFInfo
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- TWI836083B TWI836083B TW109117634A TW109117634A TWI836083B TW I836083 B TWI836083 B TW I836083B TW 109117634 A TW109117634 A TW 109117634A TW 109117634 A TW109117634 A TW 109117634A TW I836083 B TWI836083 B TW I836083B
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- 239000000463 material Substances 0.000 title claims abstract description 29
- 239000013078 crystal Substances 0.000 claims abstract description 33
- 150000001875 compounds Chemical class 0.000 claims abstract description 32
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 19
- -1 trans-1,4-disubstituted cyclohexane structure Chemical group 0.000 claims abstract description 16
- 125000001188 haloalkyl group Chemical group 0.000 claims abstract description 14
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims description 13
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- DXBHBZVCASKNBY-UHFFFAOYSA-N 1,2-Benz(a)anthracene Chemical group C1=CC=C2C3=CC4=CC=CC=C4C=C3C=CC2=C1 DXBHBZVCASKNBY-UHFFFAOYSA-N 0.000 claims 1
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- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/622—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07B—GENERAL METHODS OF ORGANIC CHEMISTRY; APPARATUS THEREFOR
- C07B61/00—Other general methods
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C15/00—Cyclic hydrocarbons containing only six-membered aromatic rings as cyclic parts
- C07C15/20—Polycyclic condensed hydrocarbons
- C07C15/38—Polycyclic condensed hydrocarbons containing four rings
-
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Abstract
一種有機電晶體材料,其特徵為具有由下述通式(1)所示的化合物所構成之反式-1,4-二取代環己烷構造,
Description
本發明關於高載子移動度且熱安定性高的有機電晶體材料及使用其之有機電晶體。
在活性層使用有機電晶體材料之有機電晶體,由於不僅氣相成長等之乾式製程,而且也可使用印刷法等之濕式製程,因此可以比矽等的無機電晶體較低成本來製造。又,藉由在塑膠基板上製作有機電晶體,可得到在無機電晶體中被視為困難的可撓性製品。因此,對於使用液晶的顯示裝置或使用有機EL之顯示裝置等,期待有機電晶體之適用。
有機電晶體材料係以載子的移動度或高溫下的安定性等之改良為目的而進行研究開發,有稠五苯等之具有多稠苯骨架者,且有具有二苯并蒽骨架或䓛骨架者(專利文獻1)。再者,有具有噻吩并噻吩骨架者(專利文獻2)。又,關於取代基,有具有環己基者(非專利文獻1)。
先前技術文獻
專利文獻
專利文獻1:日本發明專利第5460599號公報
專利文獻2:日本發明專利第5314814號公報
非專利文獻
非專利文獻1:基於環己基取代的有機半導體之有機薄膜電晶體(“Organic Thin Film Transistor Based on Cyclohexyl-Substituted Organic Semiconductors"), Chemistry of Materials , 2005, 17, p. 3366-3374
發明所欲解決的課題
相較於矽,有機電晶體材料係在載子的移動度或高溫下的安定性,於現今還有改良之餘地。
因此,本發明之目的在於提供具有高的載子移動度及優異的熱安定性之新穎的有機電晶體材料及有機電晶體。
解決課題的手段
本發明者們為了解決上述課題,專心致力地檢討有機電晶體材料,結果發現在用於有機電晶體的骨架上擁有具有烷基的側鏈之環己基的取代基之衍生物,係具有高的載子移動度及優異的熱安定性,而達成本發明。
本發明之有機電晶體材料之特徵為具有由下述通式(1)所示的化合物所構成之反式-1,4-環己烷構造,
於此,通式(1)中,
X係複數的伸苯基或伸萘基直接或介於乙烯基連接的骨架、縮合多環式烴骨架或雜環式化合物骨架,
m、n、p及q各自獨立為0或1,R1及R2各自獨立為碳數1~15的烷基或鹵烷基。
於本發明之有機電晶體材料中,前述X較佳為以下之式(2)~(45)的骨架之任一個。
本發明之有機電晶體係使用上述之有機電晶體材料者。
發明的效果
藉由本發明之有機電晶體材料,可提供具有高的載子移動度及優異的安定性之新穎材料。
實施發明的形態
以下,更具體地說明本發明之有機電晶體材料。
本發明之有機電晶體材料之特徵為具有由下述通式(1)所示的化合物所構成之反式-1,4-環己烷構造。
於此,通式(1)中,
X係複數的伸苯基或伸萘基直接或介於乙烯基連接的骨架、縮合多環式烴骨架或雜環式化合物骨架,
m、n、p及q各自獨立為0或1,R1及R2各自獨立為碳數1~15的烷基或鹵烷基。
本發明之有機電晶體材料係在作為有機電晶體材料使用的骨架X中,藉由具有在六員環的環烷基之環己基具有烷基或鹵烷基之側鏈者(以下,亦於本說明書中亦稱為「烷基環己基」)之取代基的衍生物,而比以往更載子移動度高,熱安定性良好,且具有能塗佈的溶解性。
烷基環己基之側鏈的烷基之碳數為1~15,較佳為1~10。烷基可為直鏈構造,也可為分支。作為烷基,可舉出甲基、乙基、丙基、異丙基、正丁基、第二丁基、異丁基、第三丁基、正戊基、正己基、正庚基、正辛基、正壬基、正癸基、正十一基、正十二基、正十三基、正十四基、正十五基等。藉由使用供電子性的烷基,可提高在有機溶劑中的溶解性,或控制分子排列,或控制對於塗佈基板的潤濕性,或提高最高佔有軌域(HOMO)水準而作為p型半導體發揮功能。
又,可成為烷基的氫原子經取代成鹵素的鹵烷基。鹵烷基的鹵素原子例如是氟原子、氯原子、溴原子及碘原子。作為鹵烷基,可使用該等的鹵素原子之一種或二種以上,但較佳為至少包含氟原子,更佳為僅氟原子。鹵烷基的鹵素原子係可取代烷基的氫原子之一部分,也可取代全部。作為鹵烷基,例如可舉出氟甲基、1-氟甲基、2-氟乙基、2-氟異丁基、1,2-二氟乙基、二氟甲基、三氟甲基、五氟乙基、全氟異丙基、全氟丁基、全氟環己基等。藉由使用電子接受性的鹵烷基,可控制分子排列,或控制對於塗佈基板的潤濕性,或降低最低非佔有軌域(LUMO)水準,作為n型半導體發揮功能。
烷基環己基係可在與骨架X之間具有一個苯基,也可不具有。
烷基環己基的烷基或鹵烷基與骨架X或苯基較佳係配置於環己烷環之1,4的位置。又,反式型係作為有機電晶體材料的熱安定性優於順式型而較宜。
又,烷基環己基只要對於骨架X具有至少一個即可,也可為二個。於二個之情況中,第一個環己基之側鏈的烷基與第二個烷基環己基之側鏈的烷基係碳數可相同,也可相異。於第一個環己基與骨架X之間具有苯基時及不具有時,皆第二個烷基環己基可在與骨架X之間具有一個苯基,也可不具有。
骨架X係作為有機電晶體材料使用之骨架,具體而言,複數的伸苯基或伸萘基直接或介於乙烯基連接的骨架,或者縮合多環式烴骨架、雜環式化合物骨架。此等之骨架係更具體地可例示以下之式(2)~(45)的骨架。
[複數的伸苯基或伸萘基直接或介於乙烯基連接的骨架]
(二苯乙烯基苯骨架)
(聯萘骨架)
(三聯萘基骨架)
[縮合多環式烴骨架]
[含有4個環的縮合多環式烴骨架]
(䓛骨架)
(芘骨架)
(稠四苯骨架)
[含有5個環的縮合多環式烴骨架]
(苉骨架)
(二苯并蒽骨架)
(稠五苯骨架)
[含有6個環的縮合多環式烴骨架]
(二苯并䓛骨架)
[雜環式化合物骨架]
[含有1個含硫原子的雜環之縮合雜環式化合物骨架]
[含有2個含硫原子的雜環之縮合雜環式化合物骨架]
(苯并噻吩并苯并噻吩骨架;BTBT骨架)
(二萘并噻吩并噻吩骨架;DNTT骨架)
[含有4個含硫原子的雜環之縮合雜環式化合物骨架]
(二(苯并噻吩并)噻吩并噻吩骨架)
[含有2個含氧原子的雜環之縮合雜環式化合物骨架]
骨架X係在上述式(2)~(45)之中,例如可為䓛骨架、苯并噻吩并苯并噻吩骨架、二苯并蒽骨架或二萘并噻吩并噻吩骨架。
骨架X為在上述式(6)之䓛骨架時,本發明之有機電晶體材料更具體地可例示以下之通式(A-1)~(A-7)者。於此等之通式中,R1及R2各自獨立為碳數1~15的烷基或鹵烷基。R1及R2較佳各自獨立為碳數1~10的烷基。
骨架X為上述式(29)之二萘并噻吩并噻吩骨架時,本發明之有機電晶體材料更具體地可例示以下之通式(B-1)~(B-7)者。於此等之通式中,R1及R2各自獨立為碳數1~15的烷基或鹵烷基。R1及R2較佳各自獨立為碳數1~10的烷基。
本發明之有機電晶體材料係可藉由眾所周知之方法,例如使用過渡金屬之鈴木偶合反應、使用銅觸媒之薗頭(Sonogashira)反應,及脫矽化反應、使用過渡金屬之環化反應、使用過渡金屬之根岸偶合反應而合成。
本發明之有機電晶體具備使用本發明之有機電晶體材料的有機半導體層。有機電晶體構造可為一般的構造,可作為p型半導體或作為n型半導體發揮功能。
將本發明之化合物利用於有機電晶體時,為了高純度化而必須去除雜質等之精製,本發明之化合物係可藉由液體層析法、昇華法、區域熔化法、凝膠滲透層析法、再結晶法等進行精製。
又,將本發明之化合物利用於有機電晶體時,主要以薄膜之形態使用,作為該薄膜製作法,可使用濕式製程與乾式製程之任一者。本發明之化合物係藉由溶解於有機溶劑等中,而可適應於產業上優點大的濕式製程。
此處,作為有機溶劑,例如可使用二氯甲烷、氯仿、氯苯、二氯苯、環己醇、甲苯、二甲苯、苯甲醚、環己酮、硝基苯、甲基乙基酮、二甘醇二甲醚、四氫呋喃等至目前為止眾所周知者。又,使本發明之化合物溶解於有機溶劑等中時,溫度或壓力係沒有特別的限制,但關於使其溶解之溫度,較佳為0~200℃之範圍,更佳為10~150℃之範圍。另外,關於使其溶解之壓力,較佳為0.1~100MPa之範圍,更佳為0.1~10MPa之範圍。還有,代替有機溶劑,亦可使用如超臨界二氧化碳者。
此處所言之濕式製程,表示旋塗法、浸塗法、棒塗法、噴塗法、噴墨法、網版印刷法、平板印刷法、凹版印刷法、凸版印刷法等,可利用此等眾所周知之方法。
此處所言之乾式製程,表示真空蒸鍍法、濺鍍法、CVD法、雷射蒸鍍法、分子線磊晶成長法、氣相輸送成長法等,可利用此等眾所周知之方法。
實施例
以下使用實施例來說明本發明之有機電晶體材料,惟本發明之有機電晶體材料不受實施例所限定。
(實施例1)
藉由以下之操作1-4,合成以下所示的化合物3H-21DNTT。
操作1:
藉由以下記載之反應式,合成MeO-21DNTT。
操作2:
以下顯示21DNTT-OH之反應式。
於氮氣環境中,在100mL的三口燒瓶內,添加上述「MeO-21DNTT」0.10g(0.25mmol)、脫水二氯甲烷20mL(200v/w),冷卻至-10℃。滴下1M BBr3
二氯甲烷溶液1.5mL(1.5mmol、6eq),在0℃下攪拌一夜。於原料消失後,滴下10mL的水進行淬冷,過濾結晶,以甲醇洗淨後,減壓乾燥結晶,以產率80%得到「HO-21DNTT」的淡黃色結晶。
操作3:
於氮氣環境中,在100mL的三口燒瓶內,添加上述「HO-21DNTT」75mg(0.2mmol)、脫水吡啶20mL(200v/w),冷卻至0℃。滴下三氟甲烷磺酸酐0.34g (1.2mmol、6eq),在0℃下攪拌一夜。以HPLC確認原料消失,滴下10mL的水進行淬冷,過濾結晶,以甲醇洗淨後,減壓乾燥結晶,以產率85%得到TfO-21DNTT」的淡黃色結晶。以下顯示此反應式。
操作4:
於氮氣環境中,在50mL的三口燒瓶內,添加上述「TfO-21DNTT」0.11g(0.17mmol)、Pd(dppf)Cl2
6mg(3mol%)、甲苯10mL(100v/w),滴下經1-溴-4-丙基環己烷0.10g(0.51mmol、3eq)調整的格任亞(Grignard)試劑之THF溶液5mL後,在室溫下攪拌一夜。以HPLC確認原料消失,冷卻至室溫後,滴下10mL的甲醇,過濾結晶,以丙酮洗淨。藉由以氯苯為溶劑的矽凝膠管柱來精製所得之粗體,以氯苯使其再結晶,減壓乾燥結晶,以產率50%得到目的物之「3H-21DNTT」的淡黃色結晶。
以下顯示所得之3H-21DNTT的核磁共振(1
H NMR)及飛行時間型高分解能力質量分析(TOF HRMS)測定的物性數據。
又,藉由高速液體層析(HPLC)測定的純度為99.973%(@254nm)。
以下顯示3H-21DNTT之反應式。
操作5:有機電晶體之製作(真空蒸鍍法)
於形成厚度200nm的熱氧化膜(SiO2
)且經ODTS(十八基三氯矽烷)處理的矽晶圓上,在基板溫度60℃,真空蒸鍍20nm的3H-21DNTT,從其上方,以電子束法蒸鍍40nm的成為源極・汲極電極(通道長50μm、通道寬1.5mm)之金,製作TOP接觸型元件,在250℃下熱處理5分鐘後,進行評價。
圖1中顯示此真空蒸鍍法所造成的有機電晶體之模型圖。圖1之有機電晶體1係在兼任閘極電極的矽基板2上形成熱氧化膜之絕緣層3,於該絕緣層3上形成ODTS的自我組織化單分子層4(SAM),於該自我組織化單分子層4上形成3H-21DNTT的半導體層5,於該半導體層5上,由金所成的源極電極6及汲極電極7空著間隔而形成之構造。
有機電晶體之評價結果係在真空中所測定的電場效應移動度為2.4cm2
V-1
s-1
,On/Off電流比為104
。又,熔點為310℃。
(實施例2)
藉由以下之操作,合成以下所示的化合物3HP-28CR。
於氮氣環境中,將碳酸鉀的水溶液及4-MeTHP添加至「TfO-28CR」、4-(4-丙基環己基)苯基硼酸、Pd(PPh3
)4
,加熱回流一夜。冷卻至室溫後,過濾結晶,藉由以氯苯為溶劑的矽凝膠管柱及甲苯熱洗淨來精製所得之粗體,減壓乾燥結晶,得到目的物之3HP-28CR。以下顯示所得之3HP-28CR的核磁共振(1
H NMR)及飛行時間型高分解能力質量分析(TOF HRMS)測定的物性數據。
HPLC純度為100.00%(@254nm)。
以下顯示3HP-28CR之反應式。
(實施例3)
藉由以下之操作,合成以下所示的化合物5H-21DNTT。
5H-21DNTT之合成的操作係將操作4的「1-溴-4-丙基環己烷」換成「1-溴-4-戊基環己烷」,其他係同樣地而得到目的物之5H-21DNTT。以下顯示所得之5H-21DNTT的核磁共振(1
H NMR)及飛行時間型高分解能力質量分析(TOF HRMS)測定的物性數據。
HPLC純度為99.958%(@254nm)。
使用所得之5H-21DNTT,藉由蒸鍍法製作有機電晶體,調查移動度,結果為3.08cm2
/Vs。又,所得之目的物係在升溫時,於242~288℃中具有中間相(液晶相)。
(實施例4)
藉由以下之操作,合成以下所示的化合物7H-21DNTT。
7H-21DNTT之合成的操作係將操作4的「1-溴-4-丙基環己烷」換成「1-溴-4-庚基環己烷」,其他係同樣地而得到目的物之7H-21DNTT。以下顯示所得之5H-21DNTT的核磁共振(1
H NMR)及飛行時間型高分解能力質量分析(TOF HRMS)測定的物性數據。
HPLC純度為99.888%(@254nm)。
除了使用所得之7H-21DNTT,將實施例1之操作5的熱處理溫度改變成160℃、5分鐘以外,於同樣之條件下,藉由真空蒸鍍法製作有機電晶體。電場效應移動度為1.27cm2
V-1
s-1
,On/Off電流比為108
。又,所得之目的物係在升溫時,於160~257℃中具有中間相(液晶相)。
(實施例5)
藉由以下之操作,合成以下所示的化合物4H-BTBT。
4H-BTBT之合成的操作係在2,7-雙三氟甲磺酸酯-[1]苯并噻吩并[3,2-b][1]苯并噻吩中,於氮氣環境中將甲苯添加至PdCl2
(dppf),滴下在0℃藉由1-溴-4-丙基環己烷所調整的格任亞試劑,升溫至室溫,攪拌一夜。藉由以甲苯為溶劑的矽凝膠管柱來精製所得之粗體,以甲苯使其再結晶,減壓乾燥結晶,得到目的物之4H-BTBT。以下顯示所得之4H-BTBT的核磁共振((1
H NMR)及飛行時間型高分解能力質量分析(TOF HRMS)測定的物性數據。
HPLC純度為99.983%(@254nm)
以下顯示4H-BTBT之反應式。
使用所得之4H-BTBT,從苯甲醚溶液,在基板溫度45℃,藉由邊緣澆鑄法製作薄膜。
<薄膜電場效應電晶體之製作>
於該薄膜上,使用以通道長成為100μm之方式所設計的遮罩,將2,3,5,6-四氟-7,7,8,8-四氰基醌二甲烷2nm當作受體,將金30nm當作電極,進行蒸鍍。作為絕緣層,使用厚度200nm的熱氧化膜(SiO2
)。使用KEITHLEY公司製4200-SCS型半導體參數分析器,測定傳達特性。從所得之傳達特性來估計移動度。所估計的電場效應移動度為4.8cm2
/Vs。又,所得之目的物係在升溫時於77~239℃中,在降溫時於72~225℃中,具有中間相(液晶相)。
(實施例6)
使用實施例1所合成之「3H-21DNTT」,以與實施例5同樣之方法,從3-氯噻吩溶液,在基板溫度40℃,藉由邊緣澆鑄法製作薄膜,所估計的電場效應移動度為8.8cm2
/Vs。
(實施例7)
<薄膜電場效應電晶體之製作>
於玻璃基板上,作為閘極電極,使用真空蒸鍍來形成50nm的Al。於其上,形成480nm的聚對二甲苯C作為閘極絕緣膜。於使用真空蒸鍍形成有50nm的Au作為源極汲極電極之基板上,使用實施例3所合成之「5H-21DNTT」,從鄰二氯苯溶液,在基板溫度65℃,藉由滴鑄法製作薄膜。使用KEITHLEY公司製4200-SCS型半導體參數分析器,測定傳達特性。從所得之傳達特性來估計移動度。
所估計的電場效應移動度為14.1cm2
/Vs。
(實施例8)
使用實施例4所合成之「7H-21DNTT」,以與實施例5同樣之方法,從3-氯噻吩溶液,在基板溫度40℃,藉由邊緣澆鑄法製作薄膜,所估計的電場效應移動度為4.4cm2
/Vs。
(實施例9)
藉由以下之操作1-3,合成以下所示的化合物2H-DBA。
操作1:
以下顯示化合物(b)之反應式。
於氮氣環境中,在反應容器內置入化合物(a)(Aldrich公司製)6.8g(29.5mmol)、二溴碘苯(東京化成公司製)5.7g(11.8mmol)、四苯基膦鈀(0)0.68g(0.59mmol)、二甲氧基乙烷500ml,添加碳酸鈉6.2g(59.8mmol)的水溶液100ml。將反應混合物在70℃下加熱回流12小時。過濾反應混合物,以水、甲醇洗淨,得到4.3g(產率60%)的化合物(b)。
操作2:
以下顯示化合物(c)之反應式。
於氮氣環境中,在反應容器內置入化合物(b)4.3g (7.1mmol)、肆三苯基膦鈀(0)0.82g(0.7mmol)、碘化銅(I)0.27g(1.4mmol)、三乙胺100ml,添加三甲基矽基乙炔1.5g(15.5mmol)。將反應混合物在80℃下加熱回流14小時。過濾反應混合物,以甲醇、庚烷洗淨。將所得之粗體與碳酸鉀2.6g(19.1mmol)置入反應容器中,添加甲醇、THF、水。在室溫下攪拌8小時。過濾反應混合物,以食鹽水洗淨濾液,減壓餾去溶劑。藉由以庚烷:醋酸乙酯為溶劑的矽凝膠管柱來精製所得之粗體,得到2.8g(產率81%)的化合物(c)。
操作3:
以下顯示2H-DBA之反應式。
於氮氣環境中,在反應容器內置入化合物(c)2.8g(5.7mmol)、氯化鉑0.08g(0.3mmol),添加甲苯150ml。將反應混合物在120℃下加熱回流24小時。過濾反應混合物,以二氯甲烷洗淨,昇華精製所得之粗體,得到1.0g(產率35%)的2H-DBA。
使用所得之「2H-DBA」,以與實施例5同樣之方法,從甲苯溶液,在基板溫度70℃,藉由邊緣澆鑄法製作薄膜,所估計的電場效應移動度為8.1cm2
/Vs。
(實施例10)
將實施例9之化合物(a)變更為以下所示的化合物(d)(Aldrich公司製),藉由與實施例9同樣之操作,合成以下所示的化合物3H-DBA。
使用所得之「3H-DBA」,以與實施例5同樣之方法,從甲苯溶液,在基板溫度60℃,藉由邊緣澆鑄法製作薄膜,所估計的電場效應移動度為8cm2
/Vs。
(實施例11)
將實施例9之化合物(a)變更為以下所示的化合物(e),藉由與實施例9同樣之操作,合成以下所示的化合物4H-DBA。
使用所得之「4H-DBA」,以與實施例5同樣之方法,從苯甲醚溶液,在基板溫度90℃,藉由邊緣澆鑄法製作薄膜,所估計的電場效應移動度為8.5cm2
/Vs。又,所得之目的物係在升溫時於254~341℃中,在降溫時於246~335℃中,具有中間相(液晶相)。
1:有機電晶體
2:矽基板
3:絕緣層
4:自我組織化單分子層
5:半導體層
6:源極電極
7:汲極電極
[圖1]係實施例所作成的有機電晶體之模型圖。
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TW201412748A (zh) * | 2012-08-27 | 2014-04-01 | Fujifilm Corp | 有機薄膜電晶體、有機半導體薄膜、有機半導體材料、有機薄膜電晶體用材料、非發光性有機半導體元件用塗佈溶液及化合物 |
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