TWI834614B - 用於銅的圖案化的電漿蝕刻的方法 - Google Patents
用於銅的圖案化的電漿蝕刻的方法 Download PDFInfo
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- copper layer
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 102
- 239000010949 copper Substances 0.000 title claims abstract description 102
- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000000059 patterning Methods 0.000 title claims abstract description 9
- 238000001020 plasma etching Methods 0.000 title description 4
- 230000005855 radiation Effects 0.000 claims abstract description 35
- 238000001312 dry etching Methods 0.000 claims abstract description 26
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000001039 wet etching Methods 0.000 claims description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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Abstract
一種形成平面顯示器的方法,特別是形成高像素密度的平面顯示器的方法。蝕刻的方法可包括沉積一銅層在一基材上,沉積一硬遮罩在該銅層上,圖案化該硬遮罩以暴露一銅層的第一部分,並移除銅暴露的部分以形成一互連件。移除銅暴露的部分包括乾蝕刻銅暴露的部分,並將銅暴露的部分暴露於紫外線輻射中。
Description
本文描述的實施例一般是有關於一種形成平面顯示器的方法,特別是有關於形成高像素密度的平面顯示器的方法。
顯示裝置已被廣泛地用於大範圍的電子應用,例如是電視、顯示器、行動電話、MP3撥放器、電子書閱讀器、及個人數位助理(PDAs)等等。隨著顯示裝置的解析度需求變得越來越具挑戰性,例如是移動顯示器的顯示解析度大於2000每英吋像素(pixels per inch,PPI)或450PPI,顯示裝置用於形成導電電極的區域是有限區域,此有限區域不干擾像素的發光及元件的性能。將形成於顯示裝置中的半導體積體電路維持在具有相對小的區域的一受限位置上已成為重點。低電阻材料,例如是銅,使較高的電流能夠流經給定區域,以減輕電遷移(electromigration)並允許進一步的顯示縮放。
然而,為了達到低電阻率互互連(interconnection),低電阻材料,例如是銅,必須是短且寬的線或是長且細的線二者之一。在銅互連件的製造中,先利用遮罩使銅圖案化,接著利用濕等向性蝕刻(wet isotropic etch)以製造短且寬的線。然而,隨著PPI上升,具有短且寬的互連的元件干擾像
素的照明。利用濕蝕刻製造長且細的線致使遮罩下的蝕刻,其過蝕刻(over-etches)銅並對元件的性能有負面影響。
因此,需要一種穩定且可靠的方法以形成低電阻、高長寬比的銅互連件。
本文描述的實施例一般是有關於一種形成平面顯示器的方法,特別是形成高像素密度的平面顯示器的方法。在一實施例中,蝕刻的方法包括沉積一銅層在一基材上,沉積一硬遮罩在此銅層上,圖案化該此遮罩以暴露一銅層的第一部分,並移除此銅層暴露的部分以形成一互連件。移除銅層暴露的部分包括乾蝕刻銅層暴露的部分,並持續將銅層暴露的部分暴露於紫外線輻射中。
在另一實施例中,一蝕刻的方法包括沉積一銅層在一基材上,沉積一硬遮罩在此銅層上,圖案化此硬遮罩以暴露此銅層的一第一部分,並移除銅層暴露的部分以形成一互連件。移除銅層暴露的部分包括乾蝕刻銅層暴露的部分,並將銅層暴露的部分暴露於以脈衝的方式產生的紫外線輻射中。
在另一實施例中,一蝕刻的方法包括沉積一銅層在一基材上,沉積一硬遮罩在此銅層上,圖案化此硬遮罩以暴露銅層的一第一部分,並移除銅層暴露的部分以形成一互連件。移除銅層暴露的部分包括濕蝕刻及乾蝕刻銅層暴露的部分,並將銅層暴露的部分暴露於紫外線輻射中。
100:方法
110、120、130、140:操作
200:元件
202:基材
204:銅層
206:硬遮罩層
208:光阻層
210:圖案化硬遮罩
212:第一部分
213:上表面
214:互連件
216:介電層
為了能夠理解本發明上述特徵的細節,可參照實施例,得到對於簡單總括於上之本發明更詳細的敘述,實施例的一部分係繪示於所附圖式中。然而需注意,所附的圖式僅僅繪示出本發明的典型實施例,因此其並不會被認為對本發明的範圍造成限制,因為本發明可允許其他等效的實施例。
第1圖係繪示概述根據本文描述的一實施例的方法流程圖。
第2A-2D圖係描繪根據第1圖的方法製造元件結構的階段。
為使其容易理解,已盡可能地採用一致的元件符號,來標記圖中所共有的相同元件。可預期的是,揭露於一實施例的元件可以有利地適用於其他實施例中,而不再次闡述。
本文描述的實施例一般是有關於一種形成平面顯示器的方法,特別是有關於形成高像素密度的平面顯示器的方法。藉由結合乾蝕刻製程及紫外線(UV)輻射暴露,在不將銅放入其他元件部件中(可能破壞元件的功能)的情況下,銅也可以在低溫揮發。因此,可形成高長寬比的銅互連件。
第1圖係繪示概述形成低電阻、高長寬比的銅互連件的方法100的流程圖。第2A-2D圖係描繪根據第1圖的方法100製造元件200的階段。以下根據由第2A-2D圖所示銅互連的形成階段描述方法100。
在操作110,一銅層204沉積在基材202上。基材可包括含矽材料,其表面可包括一材料,例如是矽(Si)、鍺(Ge)、或
矽鍺合金(SiGe)。基材可更包括鍺、碳(C)、硼(B)、磷(P)、或是可以與矽材料共生長、摻雜及/或結合(associate)的其他已知元件。在一些實施方式中,矽、鍺、或矽鍺合金表面可有一氧化物層(例如是自然氧化膜)沉積於上。基材202可以是在上方形成元件的一半導體基材。銅層204可以是純銅或是由錫(tin)、鋅(zinc)、銀(silver)、鎳(nickel)、鋁(aluminum)和其他金屬形成的銅合金。可利用任何合適的將銅沉積在基材上的製程。沉積銅層204的合適的製程包括物理氣相沉積(Physical Vapor Deposition,PVD)、化學氣相沉積(Chemical Vapor Deposition,CVD)、電鍍或其結合。
在操作120,一硬遮罩層206沉積在銅層204上。可利用任何合適的沉積方法沉積硬遮罩層206,例如是化學氣相沉積製程(可以是電漿增強化學氣相沉積製程)、原子層沉積、旋轉塗布、或其他合適的沉積方法。硬遮罩層206可以是氮化矽(SiN)、氮氧化矽(SiON)、氮化鈦(TiN)、氧化鈦(TiO)、氧化鎢(WO)、二氧化鋯(ZrO2)及其他金屬氧化物。
在操作130,硬遮罩層206被圖案化以暴露銅層204的第一部分212。利用光蝕刻使硬遮罩層206被圖案化。圖案化硬遮罩層包括,在一例子中,藉由旋鍍法,沉積一光阻層208於硬遮罩層206上,接著將光阻層208暴露於輻射中。接著藉由一水性鹼(Aqueous base)使光阻層208被顯影,且光阻層208及硬遮罩層206被蝕刻以暴露銅層204的第一部分212。接著將一抗蝕片(resist strip)施加於光阻層208以移除圖案化的光阻層208,來產生一圖案化硬遮罩210。第2B圖繪示了其上具有圖案化硬遮罩210
的元件200。在這樣的一例子中,硬遮罩層206被圖案化以形成圖案化硬遮罩210。圖案化硬遮罩210與銅層204的上表面接觸。銅層204具有一暴露的上表面213,其相鄰於圖案化硬遮罩210。
在操作140,銅層204暴露的部分被移除以形成一互連件214。如第2C圖所示,銅層204暴露的部分被蝕刻以暴露基材202。銅互連件214與圖案化硬遮罩210的寬度大致相同。在一實施方式中,銅互連件具有長寬比約5:1至約8:1。蝕刻銅層204的合適的方法包括非等向性乾蝕刻結合輻射暴露。藉由利用電漿乾蝕刻製程結合紫外線輻射暴露,銅層204沒有被圖案化硬遮罩210覆蓋的部分被移除。蝕刻製程氣體可包括一或多種蝕刻劑。蝕刻劑可被射頻功率激發以產生蝕刻劑氣體的自由基,以促進暴露的銅層204的蝕刻。
示例性的清潔製程包括基於三氟化氮(NF3)/氨(NH3)電漿的製程,例如是感應耦合電漿(inductively coupled plasma)製程或是遠端電漿(remote plasma)製程。蝕刻劑包括含鹵素的氣體、選擇性地是一含氫氣體、且選擇性地是一惰性氣體。在一實施方式中,含鹵素氣體是氯氣及/或氟氣,含氫氣體是氫氣,且選擇性地惰性氣體是氬氣、氦氣或二者。示例性的含氯氣體包括雙原子氯(Cl2)氣體。惰性氣體可包括氬、氦、氫、氖,氙、雙原子氮、及諸如此類之中至少其中一者。
蝕刻劑氣體或自由基與銅層204反應形成揮發性化合物,使銅層204暴露的部分可被移除。在一實施方式中,電漿蝕刻製程是一遠距電漿輔助乾蝕刻製程,其涉及同時暴露基材至三氟化氮(NF3)及氨(NH3)電漿副產物中。在另一實施方式中,電漿
蝕刻製程包括在常溫中暴露銅層204至三氟化氮(NF3)遠距電漿中。在一實施方式中,電漿蝕刻製程可以是一感應耦合電漿(inductively couple plasma,ICP)製程。電漿蝕刻製程可以在SiCoNiTM腔室中進行,此腔室可由加利福尼亞州聖塔克拉拉郡的應用材料公司取得。
電漿暴露後,元件200使用紫外線輻射被加熱或是以其他方式暴露於紫外線輻射中。
可選擇遠距蝕刻的化學性質,使蝕刻製程對於氧化矽層具有選擇性,因此不管是非晶質的、結晶的、或多晶的矽都不易被蝕刻。
通常,在低溫下乾蝕刻銅是困難的。為了使蝕刻劑前驅物揮發銅,需要非常高溫;否則銅及蝕刻劑氣體會反應形成鹽類。在高溫時,銅在蝕刻劑前驅物的存在下揮發;然而,揮發的銅也會擴散至元件200並且破壞元件性能。
相對地,除了所揭露的蝕刻化學劑之外,本揭露的方面還利用紫外線輻射。與本文提供的實施例相關的蝕刻方法可以在約30℃至約150℃之間的溫度下進行。與傳統製程相比,紫外線輻射在較低溫促進銅的揮發,並因此不會破壞元件性能。因此,可形成高長寬比的銅互連件。
元件200暴露於由一或多個紫外線燈泡產生的紫外線輻射,或是其他輻射來源的紫外線輻射。紫外線輻射具有約10nm至約400nm的波長。在一實施方式中,當元件200在被乾蝕刻時,同時被暴露於紫外線輻射中。在另一實施方式中,當元件200在被乾蝕刻時,紫外線輻射係以脈衝(pulsed)的方式產生。換
句話說,當元件200被乾蝕刻時,有一些紫外線輻射開啟的時間區段及紫外線輻射關閉的時間區段。在這樣的例子中,當紫外線輻射係以脈衝的方式產生時,元件200可交替地(例如是循環地)被暴露於蝕刻化學劑與紫外線輻射中。元件200被暴露於紫外線輻射中10分鐘至10小時。藉由結合乾蝕刻製程及紫外線輻射暴露,在不將銅放入基材或其他元件部件中的情況下,銅也可以在低溫揮發。
在另一實施例中,其他蝕刻方法可被用於蝕刻銅層204。在一實施方式中,可使用一選擇性的濕蝕刻。元件200是先乾蝕刻,且暴露於紫外線輻射中,接著濕蝕刻。換句話說,進行紫外線輔助乾蝕刻後接著進行濕蝕刻。在其他實施方式中,乾蝕刻及濕蝕刻二者都在紫外線輻射存在的情況下進行。在乾蝕刻及濕蝕刻二者的期間,元件200可連續地被暴露於紫外線輻射中。在又另一實施方式中,在乾蝕刻及濕蝕刻二者的期間,紫外線輻射可以是以脈衝的方式產生的。在一例子中,利用濕蝕刻,圖案化硬遮罩210可選擇性地被移除。在另一例子中,如果沒有利用濕蝕刻,圖案化硬遮罩210可選擇性地維持在銅互連件214上。
也考慮到元件200在互連件214形成後可經過進一步的處理,如第2D圖所示。舉例來說,一介電層216可被沉積於互連件214上。
雖然前述內容針對本發明的實施例,但可在不背離其基本範圍的情況下設計出其他和進一步的實施例,並且其範圍藉由以下之申請專利範圍來確定。
100:方法
110、120、130、140:操作
Claims (21)
- 一種蝕刻方法,包括:沉積一銅層於一基材上;沉積一硬遮罩於該銅層上;圖案化該硬遮罩以暴露該銅層的一第一部分;以及移除該銅層暴露的部分以形成一互連件,其中移除該銅層暴露的部分包括:乾蝕刻該銅層暴露的部分;在乾蝕刻期間,將該銅層暴露的部分暴露於以脈衝的方式產生的紫外線輻射中,其中該銅層暴露的部分交替地被暴露於用於乾蝕刻的一蝕刻化學劑與紫外線輻射中;濕蝕刻該銅層暴露的部分;及在濕蝕刻期間,將該銅層暴露的部分暴露於紫外線輻射中。
- 如請求項1所述之方法,其中該互連件具有約5:1至約8:1之一長寬比。
- 如請求項1所述之方法,其中係利用光蝕刻使該硬遮罩被圖案化。
- 如請求項1所述之方法,其中濕蝕刻係進行於乾蝕刻之後。
- 如請求項4所述之方法,其中乾蝕刻包括三氟化氮(NF3)/氨(NH3)電漿。
- 如請求項1所述之方法,其中紫外線輻射具有約10nm至約400nm之一波長。
- 如請求項1所述之方法,其中在乾蝕刻期間暴露該銅層暴露的部分於紫外線輻射中之步驟係執行約10分鐘至約10小時。
- 如請求項1所述之方法,更包括於形成該互連件後,移除圖案化後的該硬遮罩。
- 一種蝕刻方法,包括:沉積一銅層於一基材上;沉積一硬遮罩於該銅層上;圖案化該硬遮罩以暴露該銅層的一第一部分;以及移除該銅層暴露的部分以形成一互連件,其中移除該銅層暴露的部分包括:乾蝕刻該銅層暴露的部分;在乾蝕刻期間,將該銅層暴露的部分暴露於以脈衝的方式產生的紫外線輻射中;濕蝕刻該銅層暴露的部分;及在濕蝕刻期間,將該銅層暴露的部分暴露於紫外線輻射中。
- 如請求項9所述之方法,其中該互連件具有約5:1至約8:1的一長寬比。
- 如請求項9所述之方法,其中係利用光蝕刻使該硬遮罩被圖案化。
- 如請求項11所述之方法,其中乾蝕刻包括三氟化氮(NF3)/氨(NH3)電漿。
- 如請求項9所述之方法,其中乾蝕刻包括氯氣、氫氣、以及氬、氦、氖、氙其中一者。
- 如請求項9所述之方法,其中在乾蝕刻期間暴露該銅層暴露的部分於以脈衝的方式產生的紫外線輻射中之步驟係執行約10分鐘至約10小時。
- 如請求項9所述之方法,更包括於形成該互連件之後,移除圖案化後之該硬遮罩。
- 一種蝕刻方法,包括:沉積一銅層於一基材上;沉積一硬遮罩於該銅層上;圖案化該硬遮罩以暴露該銅層的一第一部分;以及移除該銅層暴露的部分以形成一互連件,其中移除該銅層暴露的部分包括:乾蝕刻該銅層暴露的部分;將該銅層暴露的部分暴露於紫外線輻射中;濕蝕刻該銅層暴露的部分;及在濕蝕刻期間,將該銅層暴露的部分暴露於紫外線輻射中。
- 如請求項16所述之方法,其中該互連件具有在8:1至5:1之間的一長寬比。
- 如請求項16所述之方法,更包括於形成該互連件之後,移除圖案化後之該硬遮罩。
- 如請求項16所述之方法,其中乾蝕刻包括三氟化氮(NF3)/氨(NH3)電漿。
- 如請求項16所述之方法,其中紫外線輻射具有約10nm至約400nm之一波長。
- 如請求項16所述之方法,其中在濕蝕刻期間,該銅層暴露的部分暴露於以脈衝的方式產生的紫外線輻射中。
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US20140120698A1 (en) * | 2012-04-10 | 2014-05-01 | Applied Materials, Inc. | Wafer dicing using hybrid multi-step laser scribing process with plasma etch |
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