TWI833935B - 研磨用組合物、研磨方法及基板之製造方法 - Google Patents

研磨用組合物、研磨方法及基板之製造方法 Download PDF

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Publication number
TWI833935B
TWI833935B TW109110215A TW109110215A TWI833935B TW I833935 B TWI833935 B TW I833935B TW 109110215 A TW109110215 A TW 109110215A TW 109110215 A TW109110215 A TW 109110215A TW I833935 B TWI833935 B TW I833935B
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TW
Taiwan
Prior art keywords
polishing
acid
polishing composition
grinding
metal
Prior art date
Application number
TW109110215A
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English (en)
Chinese (zh)
Other versions
TW202100711A (zh
Inventor
張逸羣
Original Assignee
日商福吉米股份有限公司
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Application filed by 日商福吉米股份有限公司 filed Critical 日商福吉米股份有限公司
Publication of TW202100711A publication Critical patent/TW202100711A/zh
Application granted granted Critical
Publication of TWI833935B publication Critical patent/TWI833935B/zh

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/403Chemomechanical polishing [CMP] of conductive or resistive materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06Planarisation of inorganic insulating materials
    • H10P95/062Planarisation of inorganic insulating materials involving a dielectric removal step
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08Planarisation of organic insulating materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/071Manufacture or treatment of dielectric parts thereof
    • H10W20/092Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW109110215A 2019-03-27 2020-03-26 研磨用組合物、研磨方法及基板之製造方法 TWI833935B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-061636 2019-03-27
JP2019061636 2019-03-27

Publications (2)

Publication Number Publication Date
TW202100711A TW202100711A (zh) 2021-01-01
TWI833935B true TWI833935B (zh) 2024-03-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW109110215A TWI833935B (zh) 2019-03-27 2020-03-26 研磨用組合物、研磨方法及基板之製造方法

Country Status (4)

Country Link
US (1) US11992914B2 (https=)
JP (1) JP7576023B2 (https=)
TW (1) TWI833935B (https=)
WO (1) WO2020196542A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7750652B2 (ja) * 2020-12-22 2025-10-07 ニッタ・デュポン株式会社 研磨用組成物
JP2023146033A (ja) * 2022-03-29 2023-10-12 株式会社フジミインコーポレーテッド スルホン酸変性コロイダルシリカ
JP2024018297A (ja) * 2022-07-29 2024-02-08 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、及び半導体基板の製造方法
CN117430354A (zh) * 2023-11-14 2024-01-23 中建西部建设(广东)有限公司 一种新型水泥助磨剂及其制备方法
WO2026083515A1 (ja) * 2024-10-16 2026-04-23 株式会社レゾナック 研磨方法及びスラリ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017025295A (ja) * 2015-07-15 2017-02-02 株式会社フジミインコーポレーテッド 研磨用組成物および磁気ディスク基板製造方法
CN106661430A (zh) * 2014-06-25 2017-05-10 嘉柏微电子材料股份公司 钨化学机械抛光组合物
JP2018012752A (ja) * 2016-07-19 2018-01-25 日立化成株式会社 研磨剤、研磨剤用貯蔵液及び研磨方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268666A (ja) 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP4781693B2 (ja) * 2004-06-14 2011-09-28 花王株式会社 磁気ディスク基板のナノスクラッチの低減方法
JP2007150264A (ja) 2005-10-27 2007-06-14 Hitachi Chem Co Ltd 有機絶縁材料膜及び銅膜複合材料用研磨材及び研磨方法
JP2007299942A (ja) 2006-04-28 2007-11-15 Fujifilm Corp 金属研磨用組成物及びそれを用いた化学的機械的研磨方法
JP6028432B2 (ja) * 2012-07-17 2016-11-16 日立化成株式会社 Cmp用研磨液、cmp用研磨液用貯蔵液及び研磨方法
US20150114928A1 (en) 2013-10-30 2015-04-30 Jia-Ni Chu Abrasive Particles for Chemical Mechanical Polishing
JP2015189898A (ja) 2014-03-28 2015-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
JP7032327B2 (ja) 2016-05-19 2022-03-08 ドンジン セミケム カンパニー リミテッド 化学-機械的研磨用スラリー組成物
TWI723284B (zh) 2017-09-15 2021-04-01 美商Cmc材料股份有限公司 鎢化學機械拋光(cmp)之組合物
JP7183863B2 (ja) 2018-03-13 2022-12-06 Jsr株式会社 化学機械研磨用組成物及び化学機械研磨方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106661430A (zh) * 2014-06-25 2017-05-10 嘉柏微电子材料股份公司 钨化学机械抛光组合物
JP2017025295A (ja) * 2015-07-15 2017-02-02 株式会社フジミインコーポレーテッド 研磨用組成物および磁気ディスク基板製造方法
JP2018012752A (ja) * 2016-07-19 2018-01-25 日立化成株式会社 研磨剤、研磨剤用貯蔵液及び研磨方法

Also Published As

Publication number Publication date
JPWO2020196542A1 (https=) 2020-10-01
WO2020196542A1 (ja) 2020-10-01
US11992914B2 (en) 2024-05-28
JP7576023B2 (ja) 2024-10-30
TW202100711A (zh) 2021-01-01
US20220055180A1 (en) 2022-02-24

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