TWI833044B - 感光性樹脂組成物、感光性乾薄膜及圖型形成方法 - Google Patents
感光性樹脂組成物、感光性乾薄膜及圖型形成方法 Download PDFInfo
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- TWI833044B TWI833044B TW109136097A TW109136097A TWI833044B TW I833044 B TWI833044 B TW I833044B TW 109136097 A TW109136097 A TW 109136097A TW 109136097 A TW109136097 A TW 109136097A TW I833044 B TWI833044 B TW I833044B
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- photosensitive resin
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Classifications
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- G—PHYSICS
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Abstract
本發明為提供一種感光性樹脂組成物,其特徵為包含:(A)包含下述式(A1)表示之重複單位、與選自下述式(A2)表示之重複單位及下述式(A3)表示之重複單位中之至少1種的聚合物、(B)於1分子中包含平均4個以上之環氧基的環氧化合物、(C)光酸產生劑、(D)苯并三唑化合物及/或咪唑化合物、以及(E)有機溶劑。
Description
本發明係關於感光性樹脂組成物、感光性乾薄膜及圖型形成方法。
以往,作為具有感光性之半導體元件保護膜或多層印刷基板用絕緣膜,係利用感光性聚醯亞胺組成物、感光性環氧樹脂組成物、感光性聚矽氧組成物等。作為適用在這般的基板、電路保護用之感光性材料,此等當中,提案有尤其是將含有可撓性優異之矽亞苯基(Silphenylene)骨架之聚矽氧型聚合物作為主成分之感光性聚矽氧組成物(專利文獻1)。然而,前述之組成物對於膜物性雖優異,但為了於解析性低,且高集積化之3次元實裝封裝使用,期望解析性的提昇及與基板之密著性的改善。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開2008-184571號公報
[發明欲解決之課題]
本發明係鑑於前述事情而完成者,以提供一種薄膜特性優異,且以厚膜可輕易進行微細之圖型形成的感光性樹脂組成物、感光性乾薄膜及圖型形成方法作為目的。
[用以解決課題之手段]
本發明者們為了達成前述目的重複努力研究的結果,發現包含:於分子中具有交聯基或產生交聯反應之反應點,且包含矽亞苯基骨架及茀骨架之聚合物、於1分子中包含平均4個以上之環氧基的環氧化合物、光酸產生劑、苯并三唑化合物及/或咪唑化合物、以及有機溶劑的感光性樹脂組成物,顯示高解析性,並顯示與基板之良好的密著性,作為鍍敷用抗蝕材料優異,而終至完成本發明。
據此,本發明係提供下述感光性樹脂組成物、感光性乾薄膜及圖型形成方法。
1.一種感光性樹脂組成物,其特徵為包含:
(A)包含下述式(A1)表示之重複單位、與選自下述式(A2)表示之重複單位及下述式(A3)表示之重複單位中之至少1種的聚合物、
(B)於1分子中包含平均4個以上之環氧基的環氧化合物、
(C)光酸產生劑、
(D)苯并三唑化合物及/或咪唑化合物、以及
(E)有機溶劑。
[式中,X1
及X2
分別獨立為氫原子或環氧丙基;
Y1
為碳數1~5之烷二基;
Z1
為可包含羥基之碳數1~10之直鏈狀烷二基、碳數2~10之分枝狀烷二基,或下述式(A4)表示之2價基;
(式中,Z11
及Z13
分別獨立為碳數1~5之烷二基;Z12
為碳數1~30之伸烴基(hydrocarbylene);a4
及a5
分別獨立為1~50之整數)
Z2
及Z3
分別獨立為單鍵或碳數1~10之烷二基;
R1
、R2
、R3
及R4
分別獨立為氫原子或碳數1~10之烴基(hydrocarbyl);
a1
、a2
及a3
為滿足0<a1
<1、0≦a2
<1、0≦a3
<1及a1
+a2
+a3
=1之數;
x及y分別獨立為1~50之整數]。
2.一種感光性樹脂皮膜,其係由如1之感光性樹脂組成物所獲得。
3.一種感光性乾薄膜,其係具備支持薄膜、與於該支持薄膜上有如2之感光性樹脂皮膜。
4.一種圖型形成方法,其特徵為包含:
(a)使用如1之感光性樹脂組成物,而於基板上形成感光性樹脂皮膜之步驟、
(b)曝光前述感光性樹脂皮膜之步驟,及
(c)將前述經曝光之感光性樹脂皮膜使用有機溶劑,進行顯影之步驟。
5.一種圖型形成方法,其特徵為包含:
(a')使用如3之感光性乾薄膜,而於基板上形成感光性樹脂皮膜之步驟、
(b)曝光前述感光性樹脂皮膜之步驟,及
(c)將前述經曝光之感光性樹脂皮膜使用有機溶劑,進行顯影之步驟。
[發明效果]
本發明之感光性樹脂組成物或感光性乾薄膜作為感光性材料,顯示充分之特性,並藉由使用此等,可於範圍廣泛的膜厚範圍形成皮膜,即使為厚膜,亦可形成微細且垂直性優異之圖型。
[感光性樹脂組成物]
本發明之感光性樹脂組成物係包含:(A)包含於分子中具有交聯基或產生交聯反應之反應點的矽亞苯基骨架及茀骨架的聚合物、(B)於1分子中包含平均4個以上之環氧基的環氧化合物、(C)光酸產生劑、(D)苯并三唑化合物及/或咪唑化合物、以及(E)有機溶劑者。
[(A)成分]
(A)成分之聚合物係包含下述式(A1)表示之重複單位、與選自下述式(A2)表示之重複單位及下述式(A3)表示之重複單位中之至少1種的聚合物。
式(A1)中,X1
及X2
分別獨立為氫原子或環氧丙基。
式(A2)中,Y1
為碳數1~5之烷二基。作為前述烷二基,可列舉亞甲基、乙烷-1,1-二基、乙烷-1,2-二基、丙烷-1,1-二基、丙烷-1,2-二基、丙烷-1,3-二基、丙烷-2,2-二基、丁烷-1,2-二基、丁烷-1,3-二基、丁烷-1,4-二基、戊烷-1,5-二基等。此等當中,作為Y1
,較佳為乙烷-1,1-二基、乙烷-1,2-二基、丙烷-1,1-二基、丙烷-1,2-二基、丙烷-1,3-二基等。
式(A3)中,Z1
為可包含羥基之碳數1~10之直鏈狀烷二基、碳數2~10之分枝狀烷二基,或下述式(A4)表示之2價基。
(式中,Z11
及Z13
分別獨立為碳數1~5之烷二基。Z12
為碳數1~30之伸烴基。a4
及a5
分別獨立為1~50之整數)。
作為Z1
表示之直鏈狀烷二基,可列舉亞甲基、乙烷-1,2-二基、丙烷-1,3-二基、丁烷-1,4-二基、戊烷-1,5-二基、己烷-1,6-二基、庚烷-1,7-二基、辛烷-1,8-二基、壬烷-1,9-二基及癸烷-1,10-二基。
作為包含羥基之直鏈狀烷二基,較佳為丙烷-1,3-二基、丁烷-1,4-二基、戊烷-1,5-二基、己烷-1,6-二基、庚烷-1,7-二基、辛烷-1,8-二基、壬烷-1,9-二基及癸烷-1,10-二基被羥基取代者,具體而言,較佳為2-羥基丙烷-1,3-二基、2-羥基丁烷-1,4-二基、3-羥基丁烷-1,4-二基等。
作為Z1
表示之碳數1~10之分枝狀烷二基,可列舉乙烷-1,1-二基、丙烷-1,2-二基、丙烷-2,2-二基、丁烷-1,2-二基、丁烷-1,3-二基。
作為式(A4)表示之2價基,雖可列舉以下所示者,但並非被限定於此等。
此等當中,作為Z1
,較佳為乙烷-1,1-二基、乙烷-1,2-二基、丙烷-1,1-二基、丙烷-1,2-二基、丙烷-1,3-二基、丙烷-2,2-二基、丁烷-1,4-二基、戊烷-1,5-二基、己烷-1,6-二基。
式(A3)中,Z2
及Z3
分別獨立為單鍵或碳數1~10之烷二基。
式(A2)及(A3)中,R1
、R2
、R3
及R4
分別獨立為氫原子或碳數1~10之烴基。前述烴基可為飽和亦可為不飽和,亦可為直鏈狀、分枝狀、環狀之任一種。作為其具體例,可列舉碳數1~10之烷基、碳數3~10之環式飽和烴基等之脂肪族烴基、碳數6~10之芳基、碳數7~10之芳烷基等之芳香族烴基。
作為前述碳數1~10之脂肪族烴基,可列舉甲基、乙基、n-丙基、異丙基、n-丁基、異丁基、sec-丁基、tert-丁基、n-戊基、n-己基、n-庚基、n-辛基、n-壬基、n-癸基等之烷基;環丙基、環丁基、環戊基、環己基、降莰基、金剛烷基等之環式飽和烴基。作為前述芳基,可列舉苯基、2-甲基苯基、3-甲基苯基、4-甲基苯基、2-乙基苯基、3-乙基苯基、4-乙基苯基、二甲基苯基等。作為前述芳烷基,可列舉苄基、苯乙基等。此等當中,作為R1
、R2
、R3
及R4
,較佳為氫原子或甲基。
式(A1)~(A3)中,a1
、a2
及a3
雖為滿足0<a1
<1、0≦a2
<1、0≦a3
<1及a1
+a2
+a3
=1之數,但較佳為滿足0.20≦a1
≦0.95、0≦a2
≦0.80、0≦a3
≦0.80及a1
+a2
+a3
=1之數,更佳為滿足0.30≦a1
≦0.95、0≦a2
≦0.70、0≦a3
≦0.70及a1
+a2
+a3
=1之數。
式(A2)及(A3)中,x及y雖分別獨立為1~50之整數,但較佳為2~40,更佳為3~30。
(A)成分之聚合物其重量平均分子量(Mw),較佳為3,000~80,000,更佳為5,000~50,000。Mw若為前述範圍,則即使以厚膜形成時,亦可具有充分之解析性。尚,在本發明,Mw係藉由將四氫呋喃(THF)作為溶出溶劑使用之凝膠滲透層析(GPC)之聚苯乙烯換算測定值。
前述聚合物可藉由將下述式(1)表示之化合物、與選自下述式(2)表示之化合物、與下述式(3)表示之化合物及下述式(4)表示之化合物中之至少1種,於金屬觸媒存在下進行加成聚合來製造。
(式中,X1
、X2
、Y1
、Z1
、Z2
、Z3
、R1
~R4
、x及y係與前述相同)。
作為前述金屬觸媒,可使用鉑(包含鉑黑)、銠、鈀等之鉑族金屬單質;H2
PtCl4
・xH2
O、H2
PtCl6
・xH2
O、NaHPtCl6
・xH2
O、KHPtCl6
・xH2
O、Na2
PtCl6
・xH2
O、K2
PtCl4
・xH2
O、PtCl4
・xH2
O、PtCl2
、Na2
HPtCl4
・xH2
O(於此,x較佳為0~6之整數,特佳為0或6)等之氯化鉑、氯化鉑酸及氯化鉑酸鹽;醇改性氯化鉑酸(例如美國專利第3,220,972號說明書所記載者);氯化鉑酸與烯烴的錯合物(例如美國專利第3,159,601號說明書、美國專利第3,159,662號說明書,及美國專利第3,775,452號說明書所記載者);將鉑黑或鈀等之鉑族金屬載持在氧化鋁、二氧化矽、碳等之載體者;銠-烯烴錯合物;氯參(三苯基膦)銠(亦即威爾金森觸媒);氯化鉑、氯化鉑酸或氯化鉑酸鹽與含有乙烯基之矽氧烷(尤其是含有乙烯基之環狀矽氧烷)的錯合物等。
觸媒的使用量為有效量,較佳為通常於化合物(1)~(4)之總質量中,作為鉑族金屬,為0.001~0.1質量%。
在前述聚合反應中,如有必要可使用溶劑。作為溶劑,例如較佳為甲苯、二甲苯等之烴系溶劑。作為前述聚合條件,從觸媒未失活,且可以短時間聚合完結的觀點來看,聚合溫度例如為40~150℃,尤其是以60~120℃較佳。聚合時間雖因原料化合物的種類及量而異,但為了防止於聚合系中濕氣的介入,以約0.5~100小時,尤其是以0.5~30小時結束較佳。如此進行,結束聚合反應後,使用溶劑的情況下,藉由餾除此,可得到聚合物。
反應方法雖並未特別限定,但首先混合式(2)表示之化合物、與選自式(3)表示之化合物及式(4)表示之化合物中之至少1種並進行加熱後,於前述混合溶液添加金屬觸媒,接著,將式(1)表示之化合物耗費0.1~5小時滴下即可。
各原料化合物相對於式(2)表示之化合物、式(3)表示之化合物及式(4)表示之化合物所具有之烯基的合計,式(1)表示之化合物所具有之氫矽烷基以莫耳比,成為較佳為0.67~1.67,更佳為0.83~1.25的方式摻合即可。聚合物之Mw可藉由將如o-烯丙基苯酚之單烯丙基化合物,或如三乙基氫矽烷之單氫矽烷或單氫矽氧烷作為分子量調整劑使用,來控制。
[(B)成分]
(B)成分係於1分子中包含平均4個以上之環氧基的環氧化合物。作為這般的化合物,雖可列舉下述式(B1)~(B3)表示之化合物,但並非被限定於此等。
式(B1)中,m為0~2之整數。n為2以上之整數,較佳為2~10之整數。R11
為碳數1~6之飽和烴基。A1
分別獨立為碳數1~10之伸烴基。作為前述飽和烴基,可列舉與在前述之式(A2)及(A3)的R1
~R4
之說明所例示之烷基或環式飽和烴基相同者。
式(B2)及(B3)中,p為4~8之整數。q為2~4之整數。R12
為碳數6~30之p價烴基,可包含選自氮原子、氧原子及硫原子中之至少1種。R13
為碳數6~20之q價烴基,可包含選自氮原子、氧原子及硫原子中之至少1種。
作為式(B2)表示之化合物,雖可列舉以下所示者,但並非被限定於此等。
作為式(B3)表示之化合物,雖可列舉以下所示者,但並非被限定於此等。
(B)成分的含量相對於(A)成分100質量份,較佳為30~200質量份,更佳為50~100質量份。
[(C)光酸產生劑]
(C)成分之光酸產生劑若為藉由高能量線照射而產生酸之化合物,則並未特別限定。作為前述高能量線,可列舉紫外線、遠紫外線、電子束(EB)等,具體而言,可列舉g線、h線、i線、KrF準分子雷射、ArF準分子雷射、EB、同步輻射光等。
作為合適之光酸產生劑,可列舉鋶鹽、碘鎓鹽等之鎓鹽、磺醯基重氮甲烷、N-磺醯氧基醯亞胺型光酸產生劑、安息香磺酸酯型光酸產生劑、苯三酚(pyrogallol)三磺酸酯型光酸產生劑、硝基苄基磺酸酯型光酸產生劑、碸型光酸產生劑、O-芳基磺醯基肟化合物,或O-烷基磺醯基肟化合物(肟磺酸酯)型光酸產生劑等。
前述鋶鹽為鋶陽離子與磺酸酯陰離子之鹽。作為前述鋶陽離子,可列舉三苯基鋶、(4-tert-丁氧基苯基)二苯基鋶、雙(4-tert-丁氧基苯基)苯基鋶、參(4-tert-丁氧基苯基)鋶、(3-tert-丁氧基苯基)二苯基鋶、雙(3-tert-丁氧基苯基)苯基鋶、參(3-tert-丁氧基苯基)鋶、(3,4-二tert-丁氧基苯基)二苯基鋶、雙(3,4-二tert-丁氧基苯基)苯基鋶、參(3,4-二tert-丁氧基苯基)鋶、二苯基(4-苯硫基苯基)鋶、(4-tert-丁氧基羰基甲基氧基苯基)二苯基鋶、參(4-tert-丁氧基羰基甲基氧基苯基)鋶、(4-tert-丁氧基苯基)雙(4-二甲基胺基苯基)鋶、參(4-二甲基胺基苯基)鋶、2-萘基二苯基鋶、二甲基2-萘基鋶、4-羥基苯基二甲基鋶、4-甲氧基苯基二甲基鋶、三甲基鋶、2-側氧基環己基環己基甲基鋶、三萘基鋶、三苄基鋶等。作為前述磺酸酯陰離子,可列舉三氟甲烷磺酸酯、九氟丁烷磺酸酯、十七氟辛烷磺酸酯、2,2,2-三氟乙烷磺酸酯、五氟苯磺酸酯、4-三氟甲基苯磺酸酯、4-氟苯磺酸酯、甲苯磺酸酯、苯磺酸酯、4-(4-甲苯磺醯氧基)苯磺酸酯、萘磺酸酯、樟腦磺酸酯、辛烷磺酸酯、十二烷基苯磺酸酯、丁烷磺酸酯、甲烷磺酸酯等。進而,可列舉鋶陽離子與磷酸、銻酸、烷基磷酸、烷基的氫原子部分性被氟原子取代之氟化烷基磷酸鹽。
前述碘鎓鹽為碘鎓陽離子與磺酸酯陰離子之鹽。作為前述碘鎓陽離子,可列舉二苯基碘鎓、雙(4-tert-丁基苯基)碘鎓、4-tert-丁氧基苯基苯基碘鎓、4-甲氧基苯基苯基碘鎓等之芳基碘鎓陽離子等。作為前述磺酸酯陰離子,可列舉三氟甲烷磺酸酯、九氟丁烷磺酸酯、十七氟辛烷磺酸酯、2,2,2-三氟乙烷磺酸酯、五氟苯磺酸酯、4-三氟甲基苯磺酸酯、4-氟苯磺酸酯、甲苯磺酸酯、苯磺酸酯、4-(4-甲苯磺醯氧基)苯磺酸酯、萘磺酸酯、樟腦磺酸酯、辛烷磺酸酯、十二烷基苯磺酸酯、丁烷磺酸酯、甲烷磺酸酯等。作為前述碘鎓鹽,較佳為包含此等之組合而成者。
作為前述磺醯基重氮甲烷,可列舉雙(乙基磺醯基)重氮甲烷、雙(1-甲基丙基磺醯基)重氮甲烷、雙(2-甲基丙基磺醯基)重氮甲烷、雙(1,1-二甲基乙基磺醯基)重氮甲烷、雙(環己基磺醯基)重氮甲烷、雙(全氟異丙基磺醯基)重氮甲烷、雙(苯基磺醯基)重氮甲烷、雙(4-甲基苯基磺醯基)重氮甲烷、雙(2,4-二甲基苯基磺醯基)重氮甲烷、雙(2-萘基磺醯基)重氮甲烷、4-甲基苯基磺醯基苯甲醯基重氮甲烷、tert-丁基羰基-4-甲基苯基磺醯基重氮甲烷、2-萘基磺醯基苯甲醯基重氮甲烷、4-甲基苯基磺醯基-2-萘甲醯基重氮甲烷、甲基磺醯基苯甲醯基重氮甲烷、tert-丁氧基羰基-4-甲基苯基磺醯基重氮甲烷等之雙磺醯基重氮甲烷,或磺醯基羰基重氮甲烷。
作為前述N-磺醯氧基醯亞胺型光酸產生劑,可列舉琥珀醯亞胺、萘二羧酸醯亞胺、苯二甲醯亞胺、環己基二羧酸醯亞胺、5-降莰烯-2,3-二羧酸醯亞胺、7-氧雜雙環[2.2.1]-5-庚烯-2,3-二羧酸醯亞胺等之與醯亞胺的氮原子鍵結之氫原子,被三氟甲烷磺醯氧基、九氟丁烷磺醯氧基、十七氟辛烷磺醯氧基、2,2,2-三氟乙烷磺醯氧基、五氟苯磺醯氧基、4-三氟甲基苯磺醯氧基、4-氟苯磺醯氧基、甲苯磺醯氧基、苯磺醯氧基、萘磺醯氧基、樟腦磺醯氧基、辛烷磺醯氧基、十二烷基苯磺醯氧基、丁烷磺醯氧基、甲烷磺醯氧基等之磺醯氧基取代之化合物。
作為安息香磺酸酯型光酸產生劑,可列舉安息香甲苯磺酸酯、安息香甲磺酸酯、安息香丁烷磺酸酯等。
作為苯三酚三磺酸酯型光酸產生劑,可列舉苯三酚、氟甘胺酸、鄰苯二酚、間苯二酚或對苯二酚之羥基的全部,被三氟甲烷磺醯氧基、九氟丁烷磺醯氧基、十七氟辛烷磺醯氧基、2,2,2-三氟乙烷磺醯氧基、五氟苯磺醯氧基、4-三氟甲基苯磺醯氧基、4-氟苯磺醯氧基、甲苯磺醯氧基、苯磺醯氧基、萘磺醯氧基、樟腦磺醯氧基、辛烷磺醯氧基、十二烷基苯磺醯氧基、丁烷磺醯氧基、甲烷磺醯氧基等之磺醯氧基取代之化合物。
作為硝基苄基磺酸酯型光酸產生劑,可列舉2,4-二硝基苄基磺酸酯、2-硝基苄基磺酸酯、2,6-二硝基苄基磺酸酯等之硝基苄基醇、與三氟甲烷磺酸酯、九氟丁烷磺酸酯、十七氟辛烷磺酸酯、2,2,2-三氟乙烷磺酸酯、五氟苯磺酸酯、4-三氟甲基苯磺酸酯、4-氟苯磺酸酯、甲苯磺酸酯、苯磺酸酯、萘磺酸酯、樟腦磺酸酯、辛烷磺酸酯、十二烷基苯磺酸酯、丁烷磺酸酯、甲烷磺酸酯等之與磺酸的酯。尚,將硝基以三氟甲基取代之化合物同樣亦可作為光酸產生劑使用。
作為碸型光酸產生劑,可列舉雙(苯基磺醯基)甲烷、雙(4-甲基苯基磺醯基)甲烷、雙(2-萘基磺醯基)甲烷、2,2-雙(苯基磺醯基)丙烷、2,2-雙(4-甲基苯基磺醯基)丙烷、2,2-雙(2-萘基磺醯基)丙烷、2-甲基-2-(p-甲苯磺醯基)苯丙酮、2-(環己基羰基)-2-(p-甲苯磺醯基)丙烷、2,4-二甲基-2-(p-甲苯磺醯基)戊烷-3-酮等。
作為O-芳基磺醯基肟化合物或O-烷基磺醯基肟化合物(肟磺酸酯)型光酸產生劑,可列舉乙二肟衍生物型、透過噻吩或環己二烯之共軛系的長肟磺酸酯型、以如三氟甲基之電子吸引基增加化合物的安定性之肟磺酸酯型、使用苯基乙腈等之取代乙腈衍生物的肟磺酸酯型、雙肟磺酸酯型等者。
作為乙二肟衍生物型光酸產生劑,可列舉雙-O-(p-甲苯磺醯基)-α-二甲基乙二肟、雙-O-(p-甲苯磺醯基)-α-二苯基乙二肟、雙-O-(p-甲苯磺醯基)-α-二環己基乙二肟、雙-O-(p-甲苯磺醯基)-2,3-戊烷二酮=二肟、雙-O-(n-丁烷磺醯基)-α-二甲基乙二肟、雙-O-(n-丁烷磺醯基)-α-二苯基乙二肟、雙-O-(n-丁烷磺醯基)-α-二環己基乙二肟、雙-O-(甲烷磺醯基)-α-二甲基乙二肟、雙-O-(三氟甲烷磺醯基)-α-二甲基乙二肟、雙-O-(2,2,2-三氟乙烷磺醯基)-α-二甲基乙二肟、雙-O-(10-樟腦磺醯基)-α-二甲基乙二肟、雙-O-(苯磺醯基)-α-二甲基乙二肟、雙-O-(4-氟苯磺醯基)-α-二甲基乙二肟、雙-O-(4-三氟甲基苯磺醯基)-α-二甲基乙二肟、雙-O-(二甲苯磺醯基)-α-二甲基乙二肟、雙-O-(三氟甲烷磺醯基)-尼肟、雙-O-(2,2,2-三氟乙烷磺醯基)-尼肟、雙-O-(10-樟腦磺醯基)-尼肟、雙-O-(苯磺醯基)-尼肟、雙-O-(4-氟苯磺醯基)-尼肟、雙-O-(4-(三氟甲基)苯磺醯基)-尼肟、雙-O-(二甲苯磺醯基)-尼肟等。
作為透過噻吩或環己二烯之共軛系的長肟磺酸酯型光酸產生劑,可列舉(5-(p-甲苯磺醯基)肟基(oximino)-5H-噻吩-2-亞基)苯基乙腈、(5-(10-樟腦磺醯基)肟基-5H-噻吩-2-亞基)苯基乙腈、(5-n-辛烷磺醯基肟基-5H-噻吩-2-亞基)苯基乙腈、(5-(p-甲苯磺醯基)肟基-5H-噻吩-2-亞基)(2-甲基苯基)乙腈、(5-(10-樟腦磺醯基)肟基-5H-噻吩-2-亞基)(2-甲基苯基)乙腈、(5-n-辛烷磺醯基肟基-5H-噻吩-2-亞基)(2-甲基苯基)乙腈、(5-(4-(p-甲苯磺醯氧基)苯磺醯基)肟基-5H-噻吩-2-亞基)苯基乙腈、(5-(2,5-雙(p-甲苯磺醯氧基)苯磺醯基)肟基-5H-噻吩-2-亞基)苯基乙腈等。
作為以如三氟甲基之電子吸引基,增加化合物的安定性之肟磺酸酯型酸產生劑,可列舉2,2,2-三氟-1-苯基乙酮=O-(甲基磺醯基)肟、2,2,2-三氟-1-苯基乙酮=O-(10-樟腦磺醯基)肟、2,2,2-三氟-1-苯基乙酮=O-(4-甲氧基苯磺醯基)肟、2,2,2-三氟-1-苯基乙酮=O-(1-萘基磺醯基)肟、2,2,2-三氟-1-苯基乙酮=O-(2-萘基磺醯基)肟、2,2,2-三氟-1-苯基乙酮=O-(2,4,6-三甲基苯基磺醯基)肟、2,2,2-三氟-1-(4-甲基苯基)乙酮=O-(10-樟腦磺醯基)肟、2,2,2-三氟-1-(4-甲基苯基)乙酮=O-(甲基磺醯基)肟、2,2,2-三氟-1-(2-甲基苯基)乙酮=O-(10-樟腦磺醯基)肟、2,2,2-三氟-1-(2,4-二甲基苯基)乙酮=O-(10-樟腦磺醯基)肟、2,2,2-三氟-1-(2,4-二甲基苯基)乙酮=O-(1-萘基磺醯基)肟、2,2,2-三氟-1-(2,4-二甲基苯基)乙酮=O-(2-萘基磺醯基)肟、2,2,2-三氟-1-(2,4,6-三甲基苯基)乙酮=O-(10-樟腦磺醯基)肟、2,2,2-三氟-1-(2,4,6-三甲基苯基)乙酮=O-(1-萘基磺醯基)肟、2,2,2-三氟-1-(2,4,6-三甲基苯基)乙酮=O-(2-萘基磺醯基)肟、2,2,2-三氟-1-(4-甲氧基苯基)乙酮=O-(甲基磺醯基)肟、2,2,2-三氟-1-(4-甲基硫代苯基)乙酮=O-(甲基磺醯基)肟、2,2,2-三氟-1-(3,4-二甲氧基苯基)乙酮=O-(甲基磺醯基)肟、2,2,2-三氟-1-(4-甲氧基苯基)乙酮=O-(4-甲基苯基磺醯基)肟、2,2,2-三氟-1-(4-甲氧基苯基)乙酮=O-(4-甲氧基苯基磺醯基)肟、2,2,2-三氟-1-(4-甲氧基苯基)乙酮=O-(4-十二烷基苯基磺醯基)肟、2,2,2-三氟-1-(4-甲氧基苯基)乙酮=O-(辛基磺醯基)肟、2,2,2-三氟-1-(4-硫代甲基苯基)乙酮=O-(4-甲氧基苯基磺醯基)肟、2,2,2-三氟-1-(4-硫代甲基苯基)乙酮=O-(4-十二烷基苯基磺醯基)肟、2,2,2-三氟-1-(4-硫代甲基苯基)乙酮=O-(辛基磺醯基)肟、2,2,2-三氟-1-(4-硫代甲基苯基)乙酮=O-(2-萘基磺醯基)肟、2,2,2-三氟-1-(2-甲基苯基)乙酮=O-(甲基磺醯基)肟、2,2,2-三氟-1-(4-甲基苯基)乙酮=O-(苯基磺醯基)肟、2,2,2-三氟-1-(4-氯苯基)乙酮=O-(苯基磺醯基)肟、2,2,3,3,4,4,4-七氟-1-苯基丁酮=O-(10-樟腦磺醯基)肟、2,2,2-三氟-1-(1-萘基)乙酮=O-(甲基磺醯基)肟、2,2,2-三氟-1-(2-萘基)乙酮=O-(甲基磺醯基)肟、2,2,2-三氟-1-(4-苄基苯基)乙酮=O-(甲基磺醯基)肟、2,2,2-三氟-1-(4-(苯基-1,4-二氧雜-丁-1-基)苯基)乙酮=O-(甲基磺醯基)肟、2,2,2-三氟-1-(1-萘基)乙酮=O-(丙基磺醯基)肟、2,2,2-三氟-1-(2-萘基)乙酮=O-(丙基磺醯基)肟、2,2,2-三氟-1-(4-苄基苯基)乙酮=O-(丙基磺醯基)肟、2,2,2-三氟-1-(4-甲基磺醯基苯基)乙酮=O-(丙基磺醯基)肟、2,2,2-三氟-1-(4-甲基磺醯氧基苯基)乙酮=O-(丙基磺醯基)肟、2,2,2-三氟-1-(4-甲基羰基氧基苯基)乙酮=O-(丙基磺醯基)肟、2,2,2-三氟-1-(6H,7H-5,8-二氧基萘并(dioxonaphtho)-2-基)乙酮=O-(丙基磺醯基)肟、2,2,2-三氟-1-(4-甲氧基羰基甲氧基苯基)乙酮=O-(丙基磺醯基)肟、2,2,2-三氟-1-(4-(甲氧基羰基)-(4-胺基-1-氧雜-五-1-基)苯基)乙酮=O-(丙基磺醯基)肟、2,2,2-三氟-1-(3,5-二甲基-4-乙氧基苯基)乙酮=O-(丙基磺醯基)肟、2,2,2-三氟-1-(4-苄基氧基苯基)乙酮=O-(丙基磺醯基)肟、2,2,2-三氟-1-(2-硫代苯基)乙酮=O-(丙基磺酸酯)肟、2,2,2-三氟-1-(1-二氧雜噻吩-2-基)乙酮=O-(丙基磺酸酯)肟、2,2,2-三氟-1-(4-(3-(4-(2,2,2-三氟-1-(三氟甲烷磺醯基肟基)乙基)苯氧基)丙氧基)苯基)乙酮=O-(三氟甲烷磺醯基)肟、2,2,2-三氟-1-(4-(3-(4-(2,2,2-三氟-1-(1-丙烷磺醯基肟基)乙基)苯氧基)丙氧基)苯基)乙酮=O-(丙基磺醯基)肟、2,2,2-三氟-1-(4-(3-(4-(2,2,2-三氟-1-(1-丁烷磺醯基肟基)乙基)苯氧基)丙氧基)苯基)乙酮=O-(丁基磺醯基)肟、2,2,2-三氟-1-(4-(3-(4-(2,2,2-三氟-1-(4-(4-甲基苯基磺醯氧基)苯基磺醯基肟基)乙基)苯氧基)丙氧基)苯基)乙酮=O-(4-(4-甲基苯基磺醯氧基)苯基磺醯基)肟、2,2,2-三氟-1-(4-(3-(4-(2,2,2-三氟-1-((2,5-雙(4-甲基苯基磺醯氧基)苯磺醯氧基)苯基磺醯基肟基)乙基)苯氧基)丙氧基)苯基)乙酮=O-((2,5-雙(4-甲基苯基磺醯氧基)苯磺醯氧基)苯基磺醯基)肟等。
作為使用取代乙腈衍生物之肟磺酸酯型光酸產生劑,可列舉α-(p-甲苯磺醯基肟基)-苯基乙腈、α-(p-氯苯磺醯基肟基)-苯基乙腈、α-(4-硝基苯磺醯基肟基)-苯基乙腈、α-(4-硝基-2-三氟甲基苯磺醯基肟基)-苯基乙腈、α-(苯磺醯基肟基)-4-氯苯基乙腈、α-(苯磺醯基肟基)-2,4-二氯苯基乙腈、α-(苯磺醯基肟基)-2,6-二氯苯基乙腈、α-(苯磺醯基肟基)-4-甲氧基苯基乙腈、α-(2-氯苯磺醯基肟基)-4-甲氧基苯基乙腈、α-(苯磺醯基肟基)-2-噻吩基乙腈、α-(4-十二烷基苯磺醯基肟基)-苯基乙腈、α-((4-甲苯磺醯基肟基)-4-甲氧基苯基)乙腈、α-((十二烷基苯磺醯基肟基)-4-甲氧基苯基)乙腈、α-(甲苯磺醯基(tosyl)肟基)-3-噻吩基乙腈、α-(甲基磺醯基肟基)-1-環戊烯基乙腈、α-(乙基磺醯基肟基)-1-環戊烯基乙腈、α-(異丙基磺醯基肟基)-1-環戊烯基乙腈、α-(n-丁基磺醯基肟基)-1-環戊烯基乙腈、α-(乙基磺醯基肟基)-1-環己烯基乙腈、α-(異丙基磺醯基肟基)-1-環己烯基乙腈、α-(n-丁基磺醯基肟基)-1-環己烯基乙腈等。
又,作為雙肟磺酸酯型光酸產生劑,可列舉雙(α-(p-甲苯磺醯氧基)亞胺基)-p-苯二乙腈(Phenylenediacetonitrile)、雙(α-(苯磺醯氧基)亞胺基)-p-苯二乙腈、雙(α-(甲烷磺醯氧基)亞胺基)-p-苯二乙腈雙(α-(丁烷磺醯氧基)亞胺基)-p-苯二乙腈、雙(α-(10-樟腦磺醯氧基)亞胺基)-p-苯二乙腈、雙(α-(三氟甲烷磺醯氧基)亞胺基)-p-苯二乙腈、雙(α-(4-甲氧基苯磺醯氧基)亞胺基)-p-苯二乙腈、雙(α-(p-甲苯磺醯氧基)亞胺基)-m-苯二乙腈、雙(α-(苯磺醯氧基)亞胺基)-m-苯二乙腈、雙(α-(甲烷磺醯氧基)亞胺基)-m-苯二乙腈、雙(α-(丁烷磺醯氧基)亞胺基)-m-苯二乙腈、雙(α-(10-樟腦磺醯氧基)亞胺基)-m-苯二乙腈、雙(α-(三氟甲烷磺醯氧基)亞胺基)-m-苯二乙腈、雙(α-(4-甲氧基苯磺醯氧基)亞胺基)-m-苯二乙腈等。
又,下述式(C1)表示之肟磺酸酯亦可作為光酸產生劑使用。
式中,R21
為可被取代之碳數1~10之鹵烷基磺醯基或鹵苯磺醯基。R22
為碳數1~11之鹵烷基。R23
為可被取代之芳基或雜芳基。
作為式(C1)表示之肟磺酸酯,可列舉2-(2,2,3,3,4,4,5,5-八氟-1-(九氟丁基磺醯基肟基)戊基)茀、2-(2,2,3,3,4,4-五氟-1-(九氟丁基磺醯基肟基)丁基)茀、2-(2,2,3,3,4,4,5,5,6,6-十氟-1-(九氟丁基磺醯基肟基)己基)茀、2-(2,2,3,3,4,4,5,5-八氟-1-(九氟丁基磺醯基肟基)戊基)-4-聯苯、2-(2,2,3,3,4,4-五氟-1-(九氟丁基磺醯基肟基)丁基)-4-聯苯、2-(2,2,3,3,4,4,5,5,6,6-十氟-1-(九氟丁基磺醯基肟基)己基)-4-聯苯等。
其中,作為優選使用之光酸產生劑,有鋶鹽、雙磺醯基重氮甲烷、N-磺醯氧基醯亞胺、磺醯基肟化合物類。
雖因聚合物而導致最適合之產生酸的陰離子不同,但一般而言,選擇無揮發性者、極端擴散性不高者。此情況下,合適之陰離子為苯磺酸陰離子、甲苯磺酸陰離子、4-(4-甲苯磺醯氧基)苯磺酸陰離子、五氟苯磺酸陰離子、2,2,2-三氟乙烷磺酸陰離子、九氟丁烷磺酸陰離子、十七氟辛烷磺酸陰離子、樟腦磺酸陰離子。又,高感度之反應性為必要時,可使用磷酸陰離子、氫原子的一部分被氟原子取代之烷基磷酸陰離子。
光酸產生劑的含量相對於(A)成分100質量份,較佳為0.2~20質量份,更佳為0.3~10質量份。含量若為前述範圍,則可得到實用上無問題之感度與圖型形狀。光酸產生劑可1種單獨或組合2種以上使用。進而,使用在曝光波長之透過率低之光酸產生劑,亦可以其添加量控制抗蝕膜中之光透過率。
[(D)成分]
作為(D)成分之苯并三唑化合物,可列舉下述式(D1)或(D2)表示者。
式(D1)及(D2)中,R31
及R33
分別獨立為氫原子、羥基、胺基、可具有取代基之碳數1~6之烷基、可具有取代基之苯基、具有磺醯基之取代基,或-A1
-A2
。A1
為羰基、碳數1~12之飽和伸烴基或-A11
-O-,A11
為碳數1~12之飽和伸烴基。A2
為氫原子、鹵素原子、氰基、羥基、碳數1~6之飽和烴氧基(hydrocarbyloxy)、羧基,或各烴基之碳數為1~6之二烴基(Dihydrocarbyl)胺基。前述飽和伸烴基以及飽和烴氧基及二烴基胺基的烴基部可為直鏈狀、分枝狀、環狀之任一種。
式(D1)及(D2)中,R32
及R34
分別獨立為氫原子、鹵素原子、羥基、可具有取代基之碳數1~6之飽和烴基、碳數1~6之飽和烴氧基、具有磺醯基之取代基,或下述式(D3)表示之有機基。
(式中,R35
為氫原子或可被取代之碳數1~12之飽和烴基。d為0或1)。
作為苯并三唑化合物,較佳為苯并三唑、1-羥基苯并三唑、1-甲基苯并三唑、1-羥基甲基苯并三唑、1-乙基苯并三唑、1-(1-羥基乙基)苯并三唑、1-(2-羥基乙基)苯并三唑、1-丙基苯并三唑、1-(1-羥基丙基)苯并三唑、1-(2-羥基丙基)苯并三唑、1-(3-羥基丙基)苯并三唑、4-羥基-1H-苯并三唑、5-甲基-1H-苯并三唑、苯并三唑-5-羧酸、1-甲基苯并三唑-5-羧酸、1-乙基苯并三唑-5-羧酸、1-tert-丁基苯并三唑-5-羧酸、1-(2-環戊基乙基)苯并三唑-5-羧酸、1H-苯并三唑-4-磺酸、1H-苯并三唑-1-乙腈、1H-苯并三唑-1-羧基醛、2-甲基-2H-苯并三唑、2-乙基-2H-苯并三唑等。
接著,作為(D)成分之咪唑化合物,可列舉下述式(D4)~(D9)表示者。
式(D4)~(D9)中,R41
為氫原子、碳數1~20之飽和烴基,或具有選自羥基、羰基、酯基、醚基、硫化物基、碳酸酯基、氰基及縮醛基中之至少一個極性官能基的碳數2~20之飽和烴基。R42
、R43
及R44
分別獨立為氫原子、碳數1~10之飽和烴基、碳數6~10之芳基或碳數7~10之芳烷基。R45
、R47
、R49
及R53
分別獨立為碳數1~10之飽和伸烴基。R46
及R48
分別獨立為氫原子或碳數1~15之飽和烴基,前述飽和烴基可包含選自羥基、羰基、酯基、醚基、硫化物基、碳酸酯基、氰基及縮醛基中之至少1種。R50
為碳數1~15之飽和烴基,可包含選自羥基、羰基、酯基、醚基、硫化物基、碳酸酯基、氰基及縮醛基中之至少1種。R51
為(h+1)價之碳數2~10之烴基。R52
分別獨立為氫原子或碳數1~15之飽和烴基,前述飽和烴基可包含選自羥基、羰基、酯基、醚基、硫化物基、碳酸酯基、氰基及縮醛基中之至少1種,又,可鍵結2個R52
形成環。h為2、3、4或5。
作為咪唑化合物,較佳為咪唑、2-甲基咪唑、4-甲基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-甲氧基甲基咪唑、N-tert-丁氧基羰基咪唑、1-(2-氰基乙基)-2-甲基咪唑、1-(2-羥基乙基)咪唑、1-(羧基甲基)咪唑、2-甲基-1-乙烯基咪唑等。
(D)成分的含量相對於(A)成分100質量份,較佳為0.01~10質量份,更佳為0.02~5質量份。(D)成分的含量若為前述範圍,可用實用的感度形成圖型。
[(E)成分]
(E)成分之有機溶劑相對於其他成分,若為具有充分之溶解性,且具有良好之塗膜性者,則並未特別限定。作為這般的有機溶劑,可列舉甲基溶纖劑、乙基溶纖劑、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯等之溶纖劑系溶劑;丙二醇、二丙二醇等之丙二醇系溶劑;丙二醇單甲基醚、丙二醇單丁基醚等之丙二醇烷基醚系溶劑;丙二醇單甲基醚乙酸酯(PGMEA)、丙二醇二甲基醚、丙二醇單乙基醚乙酸酯等之丙二醇烷基醚乙酸酯系溶劑;乙酸丁酯、乙酸戊酯、乳酸甲酯、乳酸乙酯、3-甲氧基丙酸甲酯、3-乙氧基丙酸乙酯等之酯系溶劑;甲醇、乙醇、異丙醇、丁醇、己醇、二丙酮醇等之醇系溶劑;丙酮、環己酮、環戊酮、甲基乙基酮、甲基戊基酮、甲基異丁基酮等之酮系溶劑;甲基苯基醚、二乙二醇二甲基醚等之醚系溶劑;N,N-二甲基甲醯胺、N-甲基吡咯烷酮、二甲基亞碸等之高極性溶劑;及此等之混合溶劑。
作為特佳之有機溶劑,可列舉丙二醇烷基醚乙酸酯系溶劑、乳酸烷基酯、烷基酮。作為前述丙二醇烷基醚乙酸酯之烷基,雖可列舉碳數1~4者,例如甲基、乙基、丙基等,但適合為甲基及乙基。又,於丙二醇烷基醚乙酸酯雖有1,2取代體與1,3取代體,且因取代位置的組合而有3種同分異構物,但此等可為混合物。又,乳酸烷基酯之烷基,雖可列舉碳數1~4者,例如甲基、乙基、丙基等,但適合為甲基及乙基。作為烷基酮之烷基,雖可列舉碳數1~10者,例如甲基、乙基、丙基、異丁基、環戊基、環己基等,但特別適合為異丁基、環戊基、環己基。
(E)成分的含量係本發明之組成物中,較佳為20~90質量%,更佳為25~70質量%。(E)成分的含量若為前述範圍,則可用均一之膜厚製造薄膜,不會有於薄膜中發生缺陷之虞。
[其他成分]
本發明之感光性樹脂組成物作為前述之成分以外的成分,可包含界面活性劑。作為界面活性劑,雖並未特別限定,但可列舉聚氧乙烯月桂基醚、聚氧乙烯硬脂基醚、聚氧乙烯十六烷基醚、聚氧乙烯油烯基醚等之聚氧乙烯烷基醚類、聚氧乙烯辛基苯基醚、聚氧乙烯壬基苯基醚等之聚氧乙烯烷基烯丙基醚類、聚氧乙烯聚氧丙烯嵌段共聚物類、去水山梨醇單月桂酸酯、去水山梨醇單棕櫚酸酯、去水山梨醇單硬脂酸酯等之去水山梨醇脂肪酸酯類、聚氧乙烯去水山梨醇單月桂酸酯、聚氧乙烯去水山梨醇單棕櫚酸酯、聚氧乙烯去水山梨醇單硬脂酸酯、聚醚聚矽氧、聚氧乙烯去水山梨醇三油酸酯、聚氧乙烯去水山梨醇三硬脂酸酯等之聚氧乙烯去水山梨醇脂肪酸酯之非離子系界面活性劑、Eftop(註冊商標)EF301、EF303、EF352((股)Thochem Products製)、MEGAFAC(註冊商標)F171、F172、F173 (DIC(股)製)、Fluorad(註冊商標)FC-4430、FC-430、FC-431(3M公司製)、SURFYNOL(註冊商標)E1004(日信化學工業(股)製)、AsahiGuard(註冊商標)AG710(AGC(股)製)、Surflon(註冊商標)S-381、S-382、SC101、SC102、SC103、SC104、SC105、SC106、KH-10、KH-20、KH-30、KH-40(AGC清美化學(股)製)等之氟系界面活性劑、有機矽氧烷聚合物KP-341、X-70-092、X-70-093(信越化學工業(股)製)、丙烯酸系或甲基丙烯酸系Polyflow No. 75、No. 95(共榮社化學(股)製),其中,適合為FC-4430、X-70-093。此等可1種單獨或組合2種以上使用。
界面活性劑的添加量相對於(A)成分100質量份,較佳為5質量份以下,更佳為2質量份以下。
本發明之感光性樹脂組成物進而作為任意成分,可包含用以減少來自基板之亂反射的染料等之吸光性材料,進而可包含於分子中具有1,2-萘醌二疊氮磺醯基之化合物、鹼性化合物、增感劑、交聯劑、光鹼產生劑、酸增殖劑等。尚,任意成分之添加量於不妨礙本發明之效果的範圍,可定為通常量。
本發明之感光性樹脂組成物可將(A)~(D)成分及如有必要之其他成分,以同時或任意的順序溶解在(E)成分之有機溶劑,並可調製均一之感光性樹脂組成物溶液。如有必要對於所得之均一的溶液,使用過濾器,進行過濾亦無妨。
[使用感光性樹脂組成物的圖型形成方法]
使用本發明之感光性樹脂組成物的圖型形成方法,係包含(a)使用前述感光性樹脂組成物,而於基板上形成感光性樹脂皮膜之步驟、(b)曝光前述感光性樹脂皮膜之步驟,及(c)將前述經曝光之感光性樹脂皮膜使用有機溶劑進行顯影之步驟者。
步驟(a)係使用前述感光性樹脂組成物,而於該基板上形成感光性樹脂皮膜之步驟。作為前述基板,可列舉Si、SiO2
、SiN、SiON、TiN、WSi、BPSG、SOG等之基板,或Au、Ti、W、Cu、Ni-Fe、Ta、Zn、Co、Pb等之金屬基板、有機抗反射膜等。
作為感光性樹脂皮膜之形成方法,例如可列舉將前述感光性樹脂組成物於前述基板上,藉由旋塗、輥塗、流塗、浸塗、噴塗、刮刀塗佈等之適當的塗佈方法,以成為所期望之膜厚的方式進行塗佈,且如有必要於熱板上或烤箱中60~150℃預烤0.5~120分鐘,較佳為80~130℃預烤1~90分鐘之方法。
接著,在步驟(b),曝光前述感光性樹脂皮膜。前述曝光係以波長300nm以上,尤其是以300~500nm之光進行較佳。作為這般的光,可列舉g線、i線等之紫外線。曝光量較佳為1~5,000mJ/cm2
左右,更佳為10~4000 mJ/cm2
左右。
曝光可透過光罩進行。前述光罩例如可為貫穿所期望之圖型者。尚,光罩的材質雖並未特別限定,但較佳為遮蔽前述波長之光者,例如,雖適合使用具備鉻者作為作為遮光膜,但並非被限定於此。
曝光後,如有必要可於熱板上或烤箱中進行60~150℃、1~90分鐘,較佳為80~130℃、1~60分鐘曝光後烘烤(PEB)。
曝光後或PEB後,在步驟(c),使用有機溶劑進行顯影。作為前述有機溶劑,異丙基醇等之醇類、環己酮等之酮類、丙二醇單甲基醚等之甘醇類等雖較佳,但亦可使用溶劑,該溶劑係使用在前述感光性樹脂組成物。
顯影可藉由通常之方法,例如浸漬(dip)法、水坑(puddle)法、噴霧(spray)法等進行。然後,如有必要進行洗淨、清洗、乾燥等,而得到具有所期望圖型之感光性樹脂皮膜。顯影時間雖因感光性樹脂皮膜的膜厚適當設定,通常可進行0.1~180分鐘,較佳可進行0.5~120分鐘,但並非被限定於此等。
[感光性乾薄膜]
本發明之感光性乾薄膜係具備支持薄膜、與於其上由本發明之感光性樹脂組成物所得之感光性樹脂皮膜者。
將前述感光性樹脂組成物於潔淨度1000以下之無塵室中,使用設置在溫度5~45℃,較佳為15~35℃,且濕度5~90%,較佳為10~70%所管理之區域的前輥塗佈機、逆轉輥式塗佈機、缺角輪塗佈機、模具塗佈機、唇塗機、凹版塗佈機、浸塗機、氣刀塗佈機、毛細管塗佈機、Raising&Rising(R&R)塗佈機、刀片塗佈機、棒塗機、塗抹器、擠出成形機等,作為支持薄膜,塗佈在例如熱塑性薄膜(脫模基材)之上。此時,塗佈速度較佳為0.05~1,000 m/分鐘,更佳為0.1~500m/分鐘。
而且,將塗佈前述感光性樹脂組成物之支持薄膜,於直列式烘乾機(熱風循環烤箱)中,以40~130℃、1~40分鐘,更佳為50~120℃、2~30分鐘去除有機溶劑及揮發分,使其乾燥而形成感光性樹脂皮膜。尚,取代直列式烘乾機,使用藉由紅外線照射等之溶劑去除、同時使用直列式烘乾機與紅外線照射之方法等複數種乾燥手法,進行溶劑去除,而形成感光性乾薄膜層合體亦無妨。又,如有必要可將保護薄膜(脫模基材)於前述感光性樹脂皮膜上,使用輥式覆膜機進行壓著並進行層合。
此時,形成成前述支持薄膜狀之感光性樹脂皮膜的膜厚,較佳為10~700μm,更佳為50~600μm。又,前述感光性樹脂皮膜中之有機溶劑的含量,較佳為0~15質量%。
如此進行,可於支持薄膜上連續性形成感光性樹脂皮膜,作為長尺感光性乾薄膜,可作為操作容易之薄膜輥捲繞,又,於感光性乾薄膜上形成保護薄膜的情況亦相同。
作為前述保護薄膜,與支持薄膜相同,若為不損害感光性乾薄膜的形態,可從前述感光性樹脂皮膜剝離者,則並未特別限定,可使用層合單一或複數個聚合物薄膜之多層薄膜。具體而言,可列舉尼龍薄膜、聚乙烯(PE)薄膜、聚對苯二甲酸乙二酯(PET)薄膜、聚萘二甲酸乙二酯薄膜、聚苯硫醚(Polyphenylene sulfide)(PPS)薄膜、聚丙烯(PP)薄膜、聚苯乙烯薄膜、聚甲基戊烯(TPX)薄膜、聚碳酸酯薄膜、含有氟之薄膜、特殊聚乙烯基醇(PVA)薄膜、實施脫模處理之聚酯薄膜等之塑膠薄膜。
此等當中,作為保護薄膜,較佳為具有適度之可撓性的PET薄膜或PE薄膜。此等可使用市售品,作為PET薄膜,可列舉前述者,作為PE薄膜,例如可列舉GF-8(TAMAPOLY(股)製)、PE薄膜0型(NIPPA(股)製)、TORETEC 7332、TORETEC 7111、TORETEC 7721(以上為東麗薄膜加工(股)製)等。
前述支持薄膜及保護薄膜的厚度從製造的安定性及對於繞組芯之捲曲習慣,即所謂防止捲曲的觀點來看,較佳為皆為10~150μm,更佳為25~100μm。
[使用感光性乾薄膜之圖型形成方法]
使用本發明之感光性樹脂組成物的圖型形成方法,係包含(a')使用前述感光性樹脂組成物,而於基板上形成感光性樹脂皮膜之步驟、(b)曝光前述感光性樹脂皮膜之步驟,及(c)將前述經曝光之感光性樹脂皮膜使用有機溶劑進行顯影之步驟者。
在步驟(a'),係使用前述感光性乾薄膜,而於基板上形成感光性樹脂皮膜。作為前述基板,可列舉塑膠薄膜或薄片、Si、Cu、SiO2
、SiN、SiON、TiN、WSi、BPSG、SOG等之半導體基板、Au、Ti、W、Cu、Ni-Fe、Ta、Zn、Co、Pb等之金屬基板、有機抗反射膜等之基板、有機基板等。於前述基板表面可形成藉由鍍敷或濺鍍等所形成之電路、藉由絕緣性樹脂的形成等之段差(凹凸)。前述段差較佳為0~500μm左右的範圍,更佳為3~400 μm左右的範圍,再更佳為5~300μm左右的範圍。
藉由將本發明之感光性乾薄膜使用真空覆膜機、輥式覆膜機等之各種覆膜機,貼附在基板上,剝離支持薄膜,可轉錄感光性樹脂皮膜。前述基板可具有段差構造亦無妨,藉由因應段差的高度,使用是當厚度之感光性乾薄膜,雖可於段差內嵌入感光性乾薄膜,但對於具有0~500μm左右的段差之基板可適合使用。轉錄後,即使不特別進行加熱亦無問題,但如有必要亦可進行加熱處理(預烤),進行加熱處理時,於熱板上或烤箱中進行較佳為60~150℃、1~90分鐘,更佳為80~130℃、1~30分鐘加熱即可。
步驟(a')後,藉由與使用感光性樹脂組成物之圖型形成方法相同,進行步驟(b)及步驟(c),可形成圖型。
[鍍敷步驟]
進而,於本發明,顯影步驟後,藉由電解鍍敷或無電解鍍敷,可於基板上形成金屬鍍敷層,並形成鍍敷圖型。尚,鍍敷步驟可為藉由電解鍍敷法或無電解鍍敷法,於基板上形成導體圖型,然後,去除抗蝕圖型者。
作為電解鍍敷或無電解鍍敷,可列舉電解鍍Cu、無電解鍍Cu、電解鍍Ni、無電解鍍Ni、電解鍍Au等,可用公知之鍍敷浴、鍍敷條件進行鍍敷。尚,鍍敷厚度一般為在抗蝕圖型厚度的80~120%形成。例如,種晶層為Cu,於其上形成厚度1μm之抗蝕圖型後,藉由電解鍍Cu,形成厚度0.8~1.2μm之鍍Cu圖型。
[實施例]
以下,雖顯示實施例及比較例,具體說明本發明,但本發明並非被限定於下述實施例。在下述實施例,Mw係使用TSKGEL Super HZM-H(東曹(股)製)作為GPC管柱,並以流量0.6mL/分鐘、溶出溶劑THF、管柱溫度40℃的分析條件,藉由將單分散聚苯乙烯作為標準之GPC來測定。
於合成例使用之化合物(M-1)~(M-5)係如以下。
[1]聚合物之合成
[合成例1]Poly-1之合成
於具備攪拌機、溫度計、氮取代裝置及回流冷卻器之3L燒瓶,加入化合物(M-1)172.1g(0.40莫耳)及化合物(M-2)(日油(股)製UNIOX、Mw≒500)53.9g(0.10莫耳)後,再加入甲苯2,000g,並加熱至70℃。然後,投入氯化鉑酸甲苯溶液(鉑濃度0.5質量%)1.0g,耗費1小時滴下化合物(M-3)97.0g(0.50莫耳)(氫矽烷基的合計/烯基的合計=1/1(莫耳比))。滴下結束後,加熱至100℃,熟成6小時後,從反應溶液減壓餾除甲苯,而得到Poly-1。Poly-1之Mw為38,000,藉由1
H-NMR(Bluker公司製),確認目的之聚合物。
[合成例2]Poly-2之合成
於具備攪拌機、溫度計、氮取代裝置及回流冷卻器之3L燒瓶,加入化合物(M-4)217.1g(0.40莫耳)及化合物(M-2)(日油(股)製UNIOX、Mw≒500)53.9g(0.10莫耳)後,再加入甲苯2,000g,並加熱至70℃。然後,投入氯化鉑酸甲苯溶液(鉑濃度0.5質量%)1.0g,耗費1小時滴下化合物(M-3)97.0g(0.50莫耳)(氫矽烷基的合計/烯基的合計=1/1(莫耳比))。滴下結束後,加熱至100℃,熟成6小時後,從反應溶液減壓餾除甲苯,而得到Poly-2。Poly-2之Mw為40,000,藉由1
H-NMR(Bluker公司製),確認目的之聚合物。
[合成例3]Poly-3之合成
於具備攪拌機、溫度計、氮取代裝置及回流冷卻器之3L燒瓶,加入化合物(M-4)217.1g(0.40莫耳)及化合物(M-5)(日油(股)製BLEMMER)70.4g(0.10莫耳)後,再加入甲苯2,000g,並加熱至70℃。然後,投入氯化鉑酸甲苯溶液(鉑濃度0.5質量%)1.0g,耗費1小時滴下化合物(M-3)97.0g (0.50莫耳)(氫矽烷基的合計/烯基的合計=1/1(莫耳比))。滴下結束後,加熱至100℃,熟成6小時後,從反應溶液減壓餾除甲苯,而得到Poly-3。Poly-3之Mw為35,000,藉由1
H-NMR(Bluker公司製),確認目的之聚合物。
[2]感光性樹脂組成物的調製
[實施例1-1~1-11、比較例1-1~1-5]
將Poly-1~3、光酸產生劑(CPI-210S(San-Apro(股)製))、環氧化合物(E-1~E-3)、苯并三唑(BTA-1)、咪唑化合物(4-MI)、有機溶劑(環戊酮)及其他添加劑以表1所示之組成進行混合,並將所得之溶液以孔徑1.0μm之膜過濾器過濾,調製感光性樹脂組成物1~15。尚,針對全部組成物,添加KP-341(信越化學工業(股)製)0.10質量份作為界面活性劑。尚,下述表1中,E-1~E-3、BTA-1、4-MI、NIKALACK MW-390、EP6050G、EXA-850CRP及TrisP-PA係如以下。
・E-1:TEP-G(旭有機材(股)製)、環氧當量160-180
・E-2:EOCN-1020(日本化藥(股)製)、環氧當量191-207
・E-3:TEPIC-UC(日產化學(股)製)、環氧當量185-205
・BTA-1
・4-MI
・NIKALACK MW-390:六甲氧基甲基三聚氰胺((股)三和Chemical製)
・EP6050G:酚醛清漆樹脂(旭有機材(股)製)m-甲酚/p-甲酚=40/60、Mw=2,500-4,000、軟化點135-145℃
・EXA-850CRP:雙酚A型環氧樹脂(DIC(股)製)、環氧當量170-175、黏度3,500-5,500mPa・s(25℃)
・TrisP-PA:3官能苯酚(本州化學工業(股)製)
[3]使用感光性樹脂組成物之圖型形成及其評估
[實施例2-1~2-11、比較例2-1~2-5]
將感光性樹脂組成物1~16分別在濺鍍,旋塗在蒸鍍Cu之8英吋矽晶圓上,並於熱板上進行110℃、5分鐘預烤,形成厚度100μm之感光性樹脂皮膜。接著,將經形成之感光性樹脂皮膜透過十字線,使用i線用步進器((股)尼康製NSR-2205i11D)進行曝光,並於100℃進行2分鐘PEB後,使用PGMEA,進行15分鐘噴霧顯影,使其乾燥而形成圖型。
針對所得之圖型,使用掃描型電子顯微鏡((股)日立High-Technologies製S-4700),進行最適當曝光量及解析性的確認。尚,最適當曝光量定為50μm尺寸之孔圖型成為50μm的曝光量,解析性定為解析於最適當曝光量為最小之孔圖型的遮罩尺寸。又,密著性係從顯影後在無塵室放置24小時,於製作之圖型的外周部以目視觀察漂浮之發生有無,若為未發生漂浮,則判斷為密著性良好,有漂浮的情況判斷為不良。
[4]感光性乾薄膜的製作及其評估
[實施例3]
於潔淨度1000、濕度40~45%、溫度22~26℃之無塵室,使用模具塗佈機作為薄膜塗佈機,將感光性樹脂組成物7塗佈在支持薄膜之PET薄膜(厚度38μm)上。接著,藉由通過設定在100℃之熱風循環烤箱(長度4m)5分鐘進行乾燥,於支持薄膜上形成厚度100μm之感光性樹脂皮膜。於前述感光性樹脂皮膜的表面,作為保護薄膜,以壓力1MPa貼附PE薄膜(厚度50μm),製作附保護薄膜之感光性乾薄膜。
剝離經製作之感光性乾薄膜的保護薄膜,使用真空覆膜機TEAM-100M((股)Takatori製),將真空腔室內設定在真空度80Pa,使支持薄膜上之感光性樹脂皮膜密著在200mm之Cu基板。此時之溫度條件定為60℃。恢復常壓後,將前述基板從真空覆膜機取出,剝離支持薄膜。重複3次此操作,形成3層感光性樹脂皮膜。
接著,於熱板上進行110℃、5分鐘預烤。將預烤後之薄膜的厚度藉由接觸式膜厚計((股)Mitutoyo製)確認時為300μm。將所形成之感光性樹脂皮膜透過十字線,使用i線用步進器((股)尼康製NSR-2205i11D)進行曝光,以100℃進行2分鐘PEB後,使用PGMEA,進行45分鐘水坑顯影,並以純水清洗使其乾燥,而形成圖型。
針對所得之圖型,使用掃描型電子顯微鏡((股)日立High-Technologies製S-4700)進行確認時,以1,200mJ/cm2
的曝光量,20μm之孔圖型解析在矩形。
Claims (5)
- 一種感光性樹脂組成物,其特徵為包含:(A)包含下述式(A1)表示之重複單位、與選自下述式(A2)表示之重複單位及下述式(A3)表示之重複單位中之至少1種的聚合物、(B)於1分子中包含平均4個以上之環氧基的環氧化合物、(C)光酸產生劑、(D)苯并三唑化合物及/或咪唑化合物,以及(E)有機溶劑,(B)成分的含量相對於(A)成分100質量份,為30~200質量份,(C))成分的含量相對於(A)成分100質量份,為0.2~20質量份,(D)成分的含量相對於(A)成分100質量份,為0.01~10質量份,(E)成分的含量相對於(A)成分100質量份,為20~90質量%,
- 一種感光性樹脂皮膜,其係由如請求項1之感光性樹脂組成物所獲得。
- 一種感光性乾薄膜,其係具備支持薄膜、與在該支持薄膜上有如請求項2之感光性樹脂皮膜。
- 一種圖型形成方法,其特徵為包含:(a)使用如請求項1之感光性樹脂組成物,而於基板上形成感光性樹脂皮膜之步驟、(b)曝光前述感光性樹脂皮膜之步驟,及(c)將前述經曝光之感光性樹脂皮膜使用有機溶劑,進行顯 影之步驟。
- 一種圖型形成方法,其特徵為包含:(a')使用如請求項3之感光性乾薄膜,而於基板上形成感光性樹脂皮膜之步驟、(b)曝光前述感光性樹脂皮膜之步驟,及(c)將前述經曝光之感光性樹脂皮膜使用有機溶劑,進行顯影之步驟。
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