TWI825855B - Sputtering target diffusion welding assembly and method - Google Patents

Abstract

The invention discloses a sputtering target diffusion welding assembly and method, the diffusion welding assembly comprises a target assembly and a cover plate, the target assembly comprises a target and a back plate, at least one of the upper surface and the lower surface of the back plate is provided with a concave groove, and the target is flush with the back plate after being embedded into the groove; the surface, provided with the groove, of the back plate is covered with a cover plate, the contact face or the periphery of the back plate and the cover plate is sealed, and therefore the target assembly and the cover plate are sealed into a whole, and the target is sealed in a closed containing cavity formed by the back plate and the cover plate. The sputtering target diffusion welding method comprises the steps that a cover plate is laid on the surface, provided with a groove, of a back plate, and the contact face or the periphery of the cover plate and the back plate is sealed; and at least two diffusion welding assemblies are stacked and placed in a hot isostatic pressing furnace, and hot isostatic pressing diffusion welding is carried out. According to the sputtering target diffusion welding assembly and the method, the procedures of sheathing, vacuumizing and the like are omitted, the structure is simple, and the machining and manufacturing cost is low.

Description

Sputtering target diffusion welding assembly and method

The invention relates to the technical field of semiconductor manufacturing, and in particular to a sputtering target diffusion welding assembly and a method.

At present, when the existing magnetron sputtering target components are processed and manufactured, the target components are placed in the package, and a degassing port is reserved on the package to lead out the degassing tube from the package, and the degassing tube is connected to the vacuum Equipment is connected to degas the bag. Degassing the envelope can prevent gas impurities in the air from adversely affecting the quality of the formed target element during the subsequent hot isostatic pressing process. However, setting the envelope requires placing the target element in The package is then vacuumed and degassed. The entire process is complex, has many procedures, and has high processing and manufacturing costs.

The purpose of the present invention is to provide a sputtering target diffusion welding assembly and method to solve the problems of complex processes, multiple processes, and high processing and manufacturing costs in the prior art using encapsulation and vacuuming technologies.

In order to achieve the above objects, the present invention provides the following technical solutions: On the one hand, the present invention provides a sputtering target diffusion welding assembly. The diffusion welding assembly includes a target element and a cover plate. The target element includes a target material and a back plate. , at least one of the upper and lower surfaces of the back plate is provided with a concave groove, and the target is flush with the back plate after being embedded in the groove; The slotted side surface of the back plate is covered with a cover plate, and the contact surface or periphery of the back plate and the cover plate is sealed, thereby sealing the target element and the cover plate into a closed whole, and the target material is sealed in the airtight accommodation cavity composed of the back plate and the cover plate. within.

Further, the cover plate is a target element, and the targets of the two target elements are relatively in contact with each other.

Further, the gap between the contact surface of the back plate and the cover plate is filled with adhesive, thereby sealing the target element and the cover plate.

Further, the adhesive is silver-tin alloy or indium.

Further, the outer periphery of the contact surface between the back plate and the cover plate is welded and sealed.

Further, the welding is friction stir welding or electron beam welding.

Further, a partition is embedded between the cover plate and the target material.

Further, the material of the target material is titanium or tungsten; the material of the back plate is one of aluminum, copper, aluminum alloy, and copper alloy; the material of the separator is one of stainless steel, graphite, and mica; the thickness of the separator is The surface roughness of the separator is 0.1-4mm; the surface roughness of the separator is 0.3-1.0μm.

On the other hand, the present invention also provides a sputter target diffusion welding method, which uses the above-mentioned sputter target diffusion welding assembly. The method includes the following steps: Step 1: Lay a cover plate on the grooved surface of the back plate; Seal the contact surface or periphery of the cover plate and the back plate; Step 2: Place at least two diffusion welding assemblies in a stack in a hot isostatic pressing furnace, and perform hot isostatic pressure diffusion welding.

Compared with the prior art, the beneficial effects of the present invention are: 1. The sputtering target diffusion welding assembly of the present invention seals the target material to the cover by sealing the contact surface or periphery between the cover plate and the target element. The realization is carried out in the sealed cavity formed by the board and the back plate. For target sealing, compared with the prior art that uses enveloping and vacuuming, the sputtering target diffusion welding assembly of the present invention omits encapsulation and reduces the vacuuming process; on the other hand, it saves Reduce processing and manufacturing costs; 2. The sputtering target diffusion welding assembly of the present invention is made by opening grooves on the top and bottom of the back plate, embedding the target, and stacking multiple target elements up and down in sequence, and welding the phases. The outer peripheries of two adjacent target elements can be formed into a whole, and then placed into a hot isostatic pressing furnace. On the one hand, multiple target elements are simultaneously subjected to hot isostatic pressure diffusion welding to improve hot isostatic pressure diffusion. Welding efficiency, and the products of the same batch have the same quality performance and good uniformity; on the other hand, multiple target components are welded into a whole, which improves the utilization efficiency of the hot isostatic pressing furnace; 3. The sputtering method of the present invention The target diffusion welding method is to stack multiple target components welded together into a hot isostatic pressure furnace, perform hot isostatic pressure diffusion welding, and then disassemble the welding positions after cooling, which improves production and processing. High efficiency, good product quality uniformity, simple and convenient operation, and conducive to mass production.

1:Target component

11:Target

12:Back panel

13:Slot

2:Cover

3:Partition

[Fig. 1] is a schematic structural diagram of the target element; [Fig. 2] is a top view of the back plate; [Fig. 3] A schematic diagram of the sputtering target diffusion welding assembly in Embodiment 1; [Fig. 4] A schematic diagram of the sputtering target diffusion welding assembly in Embodiment 2 Schematic diagram of the sputter target diffusion welding assembly; [Fig. 5] Schematic diagram of the sputter target diffusion welding assembly in Example 3.

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the present invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", The orientation or positional relationship indicated by "front", "rear", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have Specific orientations, structures and operations in specific orientations cannot be understood as limitations of the present invention. In the present invention, it should also be noted that the terms "installation" and "connection" should be understood in a broad sense. For example, they can be fixedly connected, or It can be a detachable connection, a mechanical connection, an indirect connection through an intermediate medium, or an electrical connection. The specific meaning of the terms in the present invention can be understood based on the specific circumstances.

Example 1

This embodiment discloses a sputtering target diffusion welding assembly, as shown in Figure 3. The diffusion welding assembly includes a target element 1. As shown in Figures 1-2, the target element includes a target 11 and a backing element. Plate 12, preferably, the target 11 and the back plate 12 are both cylindrical structures, the top of the back plate 12 is provided with a concave groove 13, and the target 11 is embedded in the groove 13. Preferably, the groove 13 is cylindrical, and the target 11 The top is flush with the top of the back plate 12.

The diffusion welding assembly includes a target element 1 and a cover plate 2 welded to the top of the target element 1. Specifically, friction stir welding is used to weld a circle along the outer periphery of the contact surface between the target element 1 and the cover plate 2, and then The target 11 is sealed in a sealed accommodation cavity formed by the cover plate 2 and the back plate 12 .

The material of the cover plate 2 and the back plate 12 may be the same or different.

In order to avoid diffusion welding between the target 11 and the cover plate 2 and facilitate subsequent smooth separation of the target 11 and the cover plate 2 , it is preferable to insert a partition 3 between the cover plate 2 and the target 11 .

The target material 11 is made of titanium or tungsten. Preferably, the target material 11 is made of titanium.

The material of the back plate 12 is one of aluminum, copper, aluminum alloy, and copper alloy. Preferably, the material of the back plate 12 is aluminum alloy 6061.

The material of the partition 3 is one of stainless steel, graphite, and mica. Preferably, the material of the partition 3 is stainless steel.

The thickness of the separator 3 is 0.1-4mm, and the thickness of the separator 3 is less than 0.1mm. During the subsequent hot isostatic pressure diffusion welding process, the cover plate 2 and the target material 11 expand and squeeze them, which can easily lead to The partition plate 3 is broken; the thickness of the partition plate 3 is greater than 4 mm, causing the gap between the cover plate 2 and the back plate 12 to be too large, making it difficult to seal the cover plate 2 and the back plate 12 through welding. Preferably, the thickness of the partition 3 is 2 mm.

The lower the surface roughness of the separator 3, that is to say, the smoother the surface of the separator 3, the more difficult it is for atomic diffusion to occur between the separator 3, the cover plate 2 and the target 11 during the subsequent diffusion welding process. Therefore, , the surface roughness of the separator 3 is designed to be 0.3-1.0 μm. Preferably, the surface roughness of the separator 3 is 1 μm.

The sputtering target diffusion welding assembly of the present invention realizes the target by welding a circle around the periphery of the contact surface between the cover plate and the target element to seal the target material in the airtight accommodation cavity formed by the cover plate and the back plate. Compared with the prior art that uses packaging and vacuuming to seal the material, the sputtering target diffusion welding assembly of the present invention, on the one hand, omits packaging and reduces the vacuuming process; on the other hand, it saves Processing and manufacturing costs.

Example 2

Different from Embodiment 1, this embodiment discloses a sputtering target diffusion welding assembly, as shown in Figure 4. The diffusion welding assembly includes a target element 1, as shown in Figures 1-2. Material component package It includes a target 11 and a back plate 12. Preferably, the target 11 and the back plate 12 are both cylindrical structures. A concave groove 13 is provided on the top of the back plate 12, and the target 11 is embedded in the groove 13. Preferably, the groove 13 is Cylindrical, the top of the target 11 is flush with the top of the backing plate 12 .

The diffusion welding assembly consists of two target elements 1 placed one above the other so that the two targets of the two target elements 1 are against each other, and electron beam welding is used to weld a circle along the outer periphery of the contact surface of the two target elements 1 , that is, welding the outer periphery of the contact surface of the two back plates 12 in a circle, and then connecting the two target elements 1 as a whole, so that the two targets 11 are sealed in the airtight accommodation cavity composed of the two back plates 12 .

In order to avoid diffusion welding between the two targets 11 , it is preferable to insert a spacer 3 between the cover plate 2 and the targets 11 .

Example 3

Different from Embodiment 1, this embodiment discloses a sputtering target diffusion welding assembly. As shown in Figure 5, the diffusion welding assembly includes a target element 1. The target element 1 includes a target 11 and Back plate 12, preferably, the target 11 and the back plate 12 are both cylindrical structures, the top and bottom of the back plate 12 are provided with concave grooves 13, and the two targets 11 are respectively embedded in the two grooves 13. Preferably, The groove 13 is cylindrical, and the top of the target 11 is flush with the top of the backing plate 12 .

The diffusion welding assembly is two target elements 1 placed one above the other, so that the two targets of the two target elements 1 are against each other. The gap between the contact surface of the back plate and the cover plate is filled with adhesive, and then the adhesive is filled in the gap between the back plate and the cover plate. Seal the target element and the cover plate using silver-tin alloy or indium as an adhesive, that is, the contact surfaces of the two back plates 12 are bonded into one body, and then the two target elements 1 are connected as a whole to realize the sealing of the two targets 11 in a sealed cavity formed by two back plates 12 .

In order to avoid diffusion welding between the two targets 11 , it is preferable to insert a spacer 3 between the cover plate 2 and the targets 11 .

In this embodiment, grooves 13 are opened on the top and bottom of the back plate, the target 11 is embedded, multiple target elements 1 are stacked up and down in sequence, and the outer peripheries of two adjacent target elements 1 are welded, that is, It can be formed into a whole and then placed into a hot isostatic pressing furnace. On the one hand, multiple target components 1 are simultaneously subjected to hot isostatic pressure diffusion welding, which improves the efficiency of hot isostatic pressure diffusion welding, and the same batch of The product quality and performance are the same and the uniformity is good; on the other hand, multiple target components 1 are welded into a whole, which improves the utilization efficiency of the hot isostatic pressing furnace.

Example 4

This embodiment provides a sputtering target diffusion welding method, which uses the sputtering target diffusion welding assembly described in Embodiment 1. The method includes the following steps: Step 1: Cover the target with the cover plate 2 On the upper surface of element 1, weld the outer periphery of the contact surface between cover plate 2 and target element 1 in a circle; step 2: stack at least two diffusion welding assemblies in a hot isostatic pressing furnace and perform hot isostatic pressing diffusion. welding.

In the sputtering target diffusion welding method of the present invention, a plurality of target components welded together are stacked and placed in a hot isostatic pressing furnace to perform hot isostatic pressure diffusion welding. After cooling, the welding positions are then disassembled. It improves production and processing efficiency, has good product quality uniformity, is simple and convenient to operate, and is conducive to mass production.

Example 5

This embodiment provides a sputter target diffusion welding method, which uses the sputter target diffusion welding assembly described in Embodiment 2. The method includes the following steps: Step 1: Place two target elements 1 up and down Place, insert the partition 3 between the two targets 11, and make the two targets 11 resist each other, and weld the outer periphery of the contact surface of the two target elements 1 in a circle; Step 2: Place at least two diffusion welding assemblies in a stack in a hot isostatic pressing furnace, and perform hot isostatic pressing diffusion welding.

Example 6

This embodiment provides a sputter target diffusion welding method, which uses the sputter target diffusion welding assembly described in Embodiment 3. The method includes the following steps: Step 1: Place multiple target elements 1 up and down Place, insert the partition 3 between two adjacent targets 11, and make the two targets 11 resist each other, and use adhesive to bond the contact surfaces of the two adjacent target elements 1; Step 2: At least Two diffusion welding assemblies are stacked and placed in a hot isostatic pressing furnace for hot isostatic pressure diffusion welding.

Comparative example 1

In this embodiment, the sputtering target diffusion welding is performed using the method of cladding + vacuuming. Specifically, the target element is placed in a sealed cladding, the cladding is evacuated and degassed, and then placed in a heat, etc. Diffusion welding is performed in the static pressure treatment furnace. After the diffusion welding is completed, it is cooled and then the jacket is removed.

Effect Example

For the sputter target diffusion welding assembly of Examples 1-3, after hot isostatic pressure diffusion welding treatment, the welding joint is disassembled to obtain the target element after diffusion welding. The surface of the target element after diffusion welding can be obtained. Smooth, even atomic diffusion, good product performance.

It is obvious to those skilled in the art that the present invention is not limited to the details of the above-described exemplary embodiments, and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention. Therefore, the embodiments should be regarded as illustrative and non-restrictive from any point of view, and the scope of the present invention is defined by the appended claims rather than the above description, and it is therefore intended that All changes that fall within the meaning and scope of the equivalent requirements of the claims are included in the present invention. Any reference designation in a request shall not be construed as limiting the request to which it refers.

In addition, it should be understood that although this specification is described in terms of implementations, not each implementation only contains an independent technical solution. This description of the description is only for the sake of clarity, and those skilled in the art should regard the description as an Overall, the technical solutions in each embodiment can also be appropriately combined to form other implementations that can be understood by those skilled in the art.

11:Target

12:Back panel

3:Partition

Claims (7)

A sputtering target diffusion welding assembly, wherein the diffusion welding assembly includes a target element and a cover plate, the target element includes a target material and a back plate, and at least one of the upper and lower surfaces of the back plate is provided with a concave groove, the target is flush with the back plate after being embedded in the groove; the surface of the grooved side of the back plate is covered with a cover plate, and the contact surface or periphery between the back plate and the cover plate is sealed, thereby sealing the target element and the cover plate into a closed whole. The material is sealed in a closed accommodation cavity composed of a back plate and a cover plate; the cover plate is a target element, the targets of the two target elements are in relative contact, and a partition is embedded between the cover plate and the target. The sputtering target diffusion welding assembly according to claim 1, wherein the gap between the contact surface of the back plate and the cover plate is filled with adhesive, thereby sealing the target element and the cover plate. The sputtering target diffusion welding assembly according to claim 2, wherein the adhesive is silver-tin alloy or indium. The sputtering target diffusion welding assembly according to claim 1, wherein the outer periphery of the contact surface between the back plate and the cover plate is welded and sealed. The sputter target diffusion welding assembly according to claim 4, wherein the welding is friction stir welding or electron beam welding. The sputtering target diffusion welding assembly according to claim 1, wherein the target material is titanium or tungsten; the back plate material is one of aluminum, copper, aluminum alloy, and copper alloy; and the separator material is It is one of stainless steel, graphite and mica; the thickness of the separator is 0.1-4mm; the surface roughness of the separator is 0.3-1.0μm. A sputtering target diffusion welding method, wherein the method uses the sputtering target diffusion welding assembly as described in any one of claims 1-6, and the method includes the following steps: Step 1: Lay a cover plate on the grooved surface of the back plate, and seal the contact surface or periphery between the cover plate and the back plate; Step 2: Stack at least two diffusion welding assemblies and place them in a hot isostatic pressing furnace for hot isostatic pressing. Pressure diffusion welding.