CN114192962A - Sputtering target diffusion welding assembly and method - Google Patents
Sputtering target diffusion welding assembly and method Download PDFInfo
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- CN114192962A CN114192962A CN202111582072.8A CN202111582072A CN114192962A CN 114192962 A CN114192962 A CN 114192962A CN 202111582072 A CN202111582072 A CN 202111582072A CN 114192962 A CN114192962 A CN 114192962A
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- target
- cover plate
- back plate
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- diffusion welding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/021—Isostatic pressure welding
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Welding Or Cutting Using Electron Beams (AREA)
Abstract
The invention discloses a sputtering target diffusion welding assembly and a method, wherein the diffusion welding assembly comprises a target assembly and a cover plate, the target assembly comprises a target and a back plate, at least one of the upper surface and the lower surface of the back plate is provided with an inwards concave groove, and the target is flush with the back plate after being embedded into the groove; the surface of the back plate provided with the groove is covered with the cover plate, and the contact surface or the periphery of the back plate and the cover plate is sealed, so that the target material assembly and the cover plate are sealed into a whole, and the target material is sealed in a closed containing cavity formed by the back plate and the cover plate. The sputtering target diffusion welding method comprises the following steps: laying a cover plate on the surface of the back plate with the groove, and sealing the contact surface or periphery of the cover plate and the back plate; and (4) stacking at least two diffusion welding assemblies in a hot isostatic pressing furnace, and performing hot isostatic pressing diffusion welding. The sputtering target diffusion welding assembly and the method of the invention omit the processes of sheathing, vacuumizing and the like, and have simple structure and low processing and manufacturing cost.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a sputtering target diffusion welding assembly and a method.
Background
At present, when an existing magnetron sputtering target assembly is manufactured, the target assembly is placed in a sheath, a degassing port is reserved on the sheath and used for leading out a degassing pipe from the sheath, and the degassing pipe is connected with vacuum equipment so as to perform degassing treatment on the sheath. And degassing the sheath, wherein in the subsequent hot isostatic pressing process, although the adverse effect of gas impurities in the air on the quality of the formed target assembly can be avoided, the target assembly needs to be placed in the sheath by arranging the sheath, and then the vacuum degassing treatment is performed, so that the whole process is complex, the number of processes is large, and the processing and manufacturing cost is high.
Disclosure of Invention
The invention aims to provide a sputtering target diffusion welding assembly and a method, which aim to solve the problems of complex process, multiple working procedures, high processing and manufacturing cost and the like in the prior art by adopting a sheathing and vacuumizing technology.
In order to achieve the purpose, the invention provides the following technical scheme:
on one hand, the invention provides a sputtering target diffusion welding assembly which comprises a target assembly and a cover plate, wherein the target assembly comprises a target and a back plate, at least one of the upper surface and the lower surface of the back plate is provided with an inwards concave groove, and the target is flush with the back plate after being embedded into the groove;
the surface of one side of the back plate groove is covered with the cover plate, and the contact surface or periphery of the back plate and the cover plate is sealed, so that the target material assembly and the cover plate are sealed into a sealed whole, and the target material is sealed in a sealed containing cavity formed by the back plate and the cover plate.
Further, the cover plate is a target assembly, and targets of the two target assemblies are oppositely abutted.
Furthermore, the gap between the contact surfaces of the back plate and the cover plate is filled with adhesive, so that the target assembly and the cover plate are sealed.
Further, the adhesive is silver-tin alloy or indium.
Further, the periphery of the contact surface of the back plate and the cover plate is welded and sealed.
Further, the welding is friction stir welding or electron beam welding.
Furthermore, a partition plate is embedded between the cover plate and the target material.
Further, the target material is titanium or tungsten; the back plate is made of one of aluminum, copper, aluminum alloy and copper alloy; the partition board is made of one of stainless steel, graphite and mica; the thickness of the separator is 0.1-4 mm; the surface roughness of the separator is 0.3 to 1.0. mu.m.
On the other hand, the invention also provides a sputtering target diffusion welding method, which adopts the sputtering target diffusion welding assembly and comprises the following steps:
the method comprises the following steps: laying a cover plate on the surface of the back plate with the groove, and sealing the contact surface or periphery of the cover plate and the back plate;
step two: and (4) stacking at least two diffusion welding assemblies in a hot isostatic pressing furnace, and performing hot isostatic pressing diffusion welding.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the sputtering target diffusion welding assembly, the contact surface or the periphery between the cover plate and the target assembly is sealed, the target is sealed in the sealed containing cavity formed by the cover plate and the back plate, and the target is sealed; on the other hand, the processing and manufacturing cost is saved;
2. according to the sputtering target diffusion welding assembly, the grooves are formed in the top and the bottom of the back plate, targets are embedded, the target assemblies are stacked up and down in sequence, the peripheries of two adjacent target assemblies are welded, a whole body can be formed, and then the whole body is placed in a hot isostatic pressing furnace; on the other hand, a plurality of target assemblies are welded into a whole, so that the utilization efficiency of the hot isostatic pressing furnace is improved;
3. according to the sputtering target diffusion welding method, the target assemblies welded into a whole are stacked and placed in the hot isostatic pressing furnace for hot isostatic pressing diffusion welding, and after cooling, the welding positions are disassembled, so that the production and processing efficiency is improved, the product quality uniformity is good, the operation is simple and convenient, and the mass production is facilitated.
Drawings
FIG. 1 is a schematic view of a target assembly;
FIG. 2 is a top view of a backing plate;
FIG. 3 is a schematic view of a sputter target diffusion weld assembly of example 1;
FIG. 4 is a schematic view of a sputter target diffusion weld assembly of example 2;
FIG. 5 is a schematic view of a sputter target diffusion bonding assembly of example 3.
In the figure, 1-target assembly; 11-a target material; 12-a back plate; 13-groove; 2-cover plate; 3-a separator.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", "front", "rear", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, only for the convenience of describing the present invention and simplifying the description, rather than to indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, therefore, it should be noted that the terms "mounted" and "connected" should be interpreted broadly, for example, the term "may be used in the present invention to refer to either a fixed connection, a detachable connection, a mechanical connection, an indirect connection via an intermediate medium, or an electrical connection.
Example 1
The embodiment of the invention discloses a sputtering target diffusion welding assembly, which comprises a target assembly 1 as shown in fig. 3, wherein as shown in fig. 1-2, the target assembly comprises a target 11 and a back plate 12, preferably, the target 11 and the back plate 12 are both of cylindrical structures, an inward concave groove 13 is formed in the top of the back plate 12, the target 11 is embedded in the groove 13, preferably, the groove 13 is cylindrical, and the top of the target 11 is flush with the top of the back plate 12.
The diffusion welding assembly comprises a target assembly 1 and a cover plate 2 welded to the top of the target assembly 1, specifically, a circle of stirring friction welding is adopted to weld along the periphery of the contact surface of the target assembly 1 and the cover plate 2, and then the target 11 is sealed in a closed accommodating cavity formed by the cover plate 2 and a back plate 12.
The material of the cover plate 2 may be the same as or different from that of the back plate 12.
In order to avoid diffusion welding between the target 11 and the cover plate 2 and facilitate subsequent smooth separation of the target 11 and the cover plate 2, it is preferable to insert the spacer 3 between the cover plate 2 and the target 11.
The material of the target 11 is titanium or tungsten, and preferably, the material of the target 11 is titanium.
The material of the back plate 12 is one of aluminum, copper, aluminum alloy and copper alloy, and preferably, the material of the back plate 12 is aluminum alloy 6061.
The material of the partition board 3 is one of stainless steel, graphite and mica, and preferably, the material of the partition board 3 is stainless steel.
The thickness of the partition board 3 is 0.1-4mm, the thickness of the partition board 3 is less than 0.1mm, and in the subsequent hot isostatic pressing diffusion welding process, the cover plate 2 and the target 11 expand to extrude the partition board 3, so that the partition board 3 is easy to break; the thickness of the spacer 3 is greater than 4mm, which results in an excessively large gap between the cover plate 2 and the back plate 12, and it is difficult to seal the cover plate 2 and the back plate 12 by welding. Preferably, the thickness of the separator 3 is 2 mm.
The lower the surface roughness of the separator 3, that is, the smoother the surface of the separator 3, the more difficult it is for atomic diffusion to occur between the separator 3 and the cover plate 2 and the target 11 during the subsequent diffusion welding, and therefore, the surface roughness of the separator 3 is designed to be 0.3 to 1.0 μm, and preferably, the surface roughness of the separator 3 is 1 μm.
According to the sputtering target diffusion welding assembly, the target is sealed in the closed containing cavity formed by the cover plate and the back plate by welding the periphery of the contact surface between the cover plate and the target assembly for a circle, so that the target is sealed; on the other hand, the processing and manufacturing cost is saved.
Example 2
Different from embodiment 1, the present embodiment discloses a sputtering target diffusion welding assembly, as shown in fig. 4, the diffusion welding assembly includes a target assembly 1, as shown in fig. 1-2, the target assembly includes a target 11 and a back plate 12, preferably, the target 11 and the back plate 12 are both cylindrical structures, the top of the back plate 12 is provided with an inward-concave groove 13, the target 11 is embedded in the groove 13, preferably, the groove 13 is cylindrical, and the top of the target 11 is flush with the top of the back plate 12.
The diffusion welding assembly is characterized in that the two target assemblies 1 are placed up and down, so that the two targets of the two target assemblies 1 are abutted, and a circle of welding is performed along the peripheries of the contact surfaces of the two target assemblies 1 by adopting electron beam welding, namely, a circle of welding is performed on the peripheries of the contact surfaces of the two back plates 12, so that the two target assemblies 1 are connected into a whole, and the two targets 11 are sealed in a closed accommodating cavity formed by the two back plates 12.
In order to avoid diffusion welding between the two targets 11, it is preferable to insert the spacer 3 between the cover plate 2 and the targets 11.
Example 3
Different from embodiment 1, the present embodiment discloses a sputtering target diffusion welding assembly, as shown in fig. 5, the diffusion welding assembly includes a target assembly 1, the target assembly 1 includes a target 11 and a back plate 12, preferably, the target 11 and the back plate 12 are both cylindrical structures, the top and the bottom of the back plate 12 are both provided with concave grooves 13, the two targets 11 are respectively embedded into the two grooves 13, preferably, the grooves 13 are cylindrical, and the top of the target 11 is flush with the top of the back plate 12.
The diffusion welding assembly is composed of two target assemblies 1 which are vertically arranged, so that the two targets of the two target assemblies 1 are abutted, the target assemblies and the cover plate are sealed by filling adhesive in a gap between contact surfaces of the back plate and the cover plate, the adhesive is silver-tin alloy or indium, namely the contact surfaces of the two back plates 12 are bonded into a whole, the two target assemblies 1 are connected into a whole, and the two targets 11 are sealed in a closed accommodating cavity formed by the two back plates 12.
In order to avoid diffusion welding between the two targets 11, it is preferable to insert the spacer 3 between the cover plate 2 and the targets 11.
In the embodiment, the grooves 13 are formed in the top and the bottom of the back plate, the target materials 11 are embedded, the target material assemblies 1 are sequentially stacked up and down, the peripheries of two adjacent target material assemblies 1 are welded, a whole body can be formed, and then the whole body is placed in the hot isostatic pressing furnace, on one hand, the hot isostatic pressing diffusion welding is simultaneously carried out on the target material assemblies 1, the hot isostatic pressing diffusion welding efficiency is improved, and the products in the same batch have the same quality and good uniformity; on the other hand, a plurality of target assemblies 1 are welded into a whole, so that the utilization efficiency of the hot isostatic pressing furnace is improved.
Example 4
The embodiment provides a sputtering target diffusion welding method, which adopts the sputtering target diffusion welding assembly in the embodiment 1, and comprises the following steps:
the method comprises the following steps: covering the cover plate 2 on the upper surface of the target assembly 1, and welding the periphery of the contact surface of the cover plate 2 and the target assembly 1 for a circle;
step two: and (4) stacking at least two diffusion welding assemblies in a hot isostatic pressing furnace, and performing hot isostatic pressing diffusion welding.
According to the sputtering target diffusion welding method, the target assemblies welded into a whole are stacked and placed in the hot isostatic pressing furnace for hot isostatic pressing diffusion welding, and after cooling, the welding positions are disassembled, so that the production and processing efficiency is improved, the product quality uniformity is good, the operation is simple and convenient, and the mass production is facilitated.
Example 5
The embodiment provides a sputtering target diffusion welding method, which adopts the sputtering target diffusion welding assembly in the embodiment 2, and comprises the following steps:
the method comprises the following steps: placing the two target assemblies 1 up and down, inserting the partition plate 3 between the two targets 11, enabling the two targets 11 to be abutted, and welding the peripheries of the contact surfaces of the two target assemblies 1 for one circle;
step two: and (4) stacking at least two diffusion welding assemblies in a hot isostatic pressing furnace, and performing hot isostatic pressing diffusion welding.
Example 6
The embodiment provides a sputter target diffusion welding method, which adopts the sputter target diffusion welding assembly in the embodiment 3, and comprises the following steps:
the method comprises the following steps: placing a plurality of target assemblies 1 up and down, inserting a partition plate 3 between two adjacent targets 11, enabling the two targets 11 to be abutted, and bonding contact surfaces of the two adjacent target assemblies 1 by adopting an adhesive;
step two: and (4) stacking at least two diffusion welding assemblies in a hot isostatic pressing furnace, and performing hot isostatic pressing diffusion welding.
Comparative example 1
In the embodiment, sputtering target diffusion welding is performed by adopting a sheathing and vacuumizing mode, specifically, a target assembly is placed in a sealed sheathing, the sheathing is vacuumized and degassed, then the sheathing is placed in a hot isostatic pressing treatment furnace for diffusion welding, after the diffusion welding is finished, the sheathing is cooled, and then the sheathing is removed.
Effects of the embodiment
The sputtering target diffusion welding assembly of the embodiment 1-3 is subjected to hot isostatic pressing diffusion welding treatment, and then the welding part is disassembled, so that the diffusion-welded target assembly can be obtained, and the diffusion-welded target assembly has a flat surface, uniform atomic diffusion and good product performance.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (9)
1. The sputtering target diffusion welding assembly is characterized by comprising a target assembly (1) and a cover plate (2), wherein the target assembly (1) comprises a target (11) and a back plate (12), at least one of the upper surface and the lower surface of the back plate (12) is provided with an inwards concave groove (13), and the target (11) is flush with the back plate (12) after being embedded into the groove (13);
the surface of one side of the slot (13) of the back plate (12) is covered with the cover plate (2), the contact surface or the periphery of the back plate (12) and the cover plate (2) is sealed, so that the target assembly (1) and the cover plate (2) are sealed into a sealed whole, and the target (11) is sealed in a sealed accommodating cavity formed by the back plate (12) and the cover plate (2).
2. The sputter target diffusion welding assembly according to claim 1, wherein the cover plate (2) is a target assembly (1), and the targets (11) of the two target assemblies (1) are abutted against each other.
3. The sputter target diffusion weld assembly according to claim 1, wherein the gap between the contact surfaces of the backing plate (12) and the cover plate (2) is filled with an adhesive, thereby sealing the target assembly (1) and the cover plate (2).
4. The sputter target diffusion bonding assembly of claim 3, wherein said binder is silver tin alloy or indium.
5. The sputter target diffusion welding assembly according to claim 1, wherein the back plate (12) is welded and sealed to the outer periphery of the contact surface of the cover plate (2).
6. The sputter target diffusion weld assembly of claim 5, wherein the weld is a friction stir weld or an electron beam weld.
7. A sputter target diffusion weld assembly according to any one of claims 1 to 6, characterized in that a spacer (3) is inserted between the cover plate (2) and the target (11).
8. The sputter target diffusion weld assembly of claim 7, wherein the target (11) is made of titanium or tungsten; the back plate (12) is made of one of aluminum, copper, aluminum alloy and copper alloy; the partition board (3) is made of one of stainless steel, graphite and mica; the thickness of the clapboard (3) is 0.1-4 mm; the surface roughness of the separator (3) is 0.3 to 1.0 μm.
9. A sputter target diffusion bonding method using a sputter target diffusion bonding assembly according to any one of claims 1 to 8, comprising the steps of:
the method comprises the following steps: a cover plate (2) is laid on the surface of the back plate (12) with the groove (13), and the contact surface or the periphery of the cover plate (2) and the back plate (12) is sealed;
step two: and (4) stacking at least two diffusion welding assemblies in a hot isostatic pressing furnace, and performing hot isostatic pressing diffusion welding.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111582072.8A CN114192962A (en) | 2021-12-22 | 2021-12-22 | Sputtering target diffusion welding assembly and method |
| TW111126820A TWI825855B (en) | 2021-12-22 | 2022-07-18 | Sputtering target diffusion welding assembly and method |
| JP2022131384A JP2023093308A (en) | 2021-12-22 | 2022-08-19 | Assembly and method for scattering and welding sputtering target material |
| KR1020220108120A KR20230095785A (en) | 2021-12-22 | 2022-08-29 | Sputtering target diffusion welding assembly and a method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111582072.8A CN114192962A (en) | 2021-12-22 | 2021-12-22 | Sputtering target diffusion welding assembly and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114192962A true CN114192962A (en) | 2022-03-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111582072.8A Pending CN114192962A (en) | 2021-12-22 | 2021-12-22 | Sputtering target diffusion welding assembly and method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2023093308A (en) |
| KR (1) | KR20230095785A (en) |
| CN (1) | CN114192962A (en) |
| TW (1) | TWI825855B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114799453A (en) * | 2022-03-31 | 2022-07-29 | 宁波江丰电子材料股份有限公司 | Welding method of high-purity copper target |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200617194A (en) * | 2006-02-17 | 2006-06-01 | Avail Technology Co Ltd | Friction stir welding of backing plate for the sputtering targets of photo-electronic PVD |
| CN106271148A (en) * | 2015-05-12 | 2017-01-04 | 宁波江丰电子材料股份有限公司 | The welding method of target material assembly |
| CN108070834B (en) * | 2016-11-18 | 2020-02-04 | 宁波江丰电子材料股份有限公司 | Back plate and forming method thereof |
| CN112453708A (en) * | 2020-11-19 | 2021-03-09 | 宁波江丰电子材料股份有限公司 | Method for assembling and welding sheath |
| CN214921358U (en) * | 2021-02-22 | 2021-11-30 | 宁波江丰电子材料股份有限公司 | Welding tool for tungsten-titanium alloy target assembly |
-
2021
- 2021-12-22 CN CN202111582072.8A patent/CN114192962A/en active Pending
-
2022
- 2022-07-18 TW TW111126820A patent/TWI825855B/en active
- 2022-08-19 JP JP2022131384A patent/JP2023093308A/en active Pending
- 2022-08-29 KR KR1020220108120A patent/KR20230095785A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114799453A (en) * | 2022-03-31 | 2022-07-29 | 宁波江丰电子材料股份有限公司 | Welding method of high-purity copper target |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202325874A (en) | 2023-07-01 |
| KR20230095785A (en) | 2023-06-29 |
| JP2023093308A (en) | 2023-07-04 |
| TWI825855B (en) | 2023-12-11 |
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