TW202325874A - Sputtering target diffusion welding assembly and method - Google Patents

Sputtering target diffusion welding assembly and method Download PDF

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Publication number
TW202325874A
TW202325874A TW111126820A TW111126820A TW202325874A TW 202325874 A TW202325874 A TW 202325874A TW 111126820 A TW111126820 A TW 111126820A TW 111126820 A TW111126820 A TW 111126820A TW 202325874 A TW202325874 A TW 202325874A
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target
diffusion welding
cover plate
back plate
sputtering target
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TW111126820A
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TWI825855B (en
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高超
林智行
大岩一彥
山田浩
姚科科
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大陸商浙江最成半導體科技有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023Thermo-compression bonding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/021Isostatic pressure welding
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491Manufacturing of targets

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)

Abstract

The invention discloses a sputtering target diffusion welding assembly and method, the diffusion welding assembly comprises a target assembly and a cover plate, the target assembly comprises a target and a back plate, at least one of the upper surface and the lower surface of the back plate is provided with a concave groove, and the target is flush with the back plate after being embedded into the groove; the surface, provided with the groove, of the back plate is covered with a cover plate, the contact face or the periphery of the back plate and the cover plate is sealed, and therefore the target assembly and the cover plate are sealed into a whole, and the target is sealed in a closed containing cavity formed by the back plate and the cover plate. The sputtering target diffusion welding method comprises the steps that a cover plate is laid on the surface, provided with a groove, of a back plate, and the contact face or the periphery of the cover plate and the back plate is sealed; and at least two diffusion welding assemblies are stacked and placed in a hot isostatic pressing furnace, and hot isostatic pressing diffusion welding is carried out. According to the sputtering target diffusion welding assembly and the method, the procedures of sheathing, vacuumizing and the like are omitted, the structure is simple, and the machining and manufacturing cost is low.

Description

濺射靶材擴散焊接組合體及方法Sputtering target diffusion welding assembly and method

本發明涉及半導體製造技術領域,具體涉及濺射靶材擴散焊接組合體及方法。The invention relates to the technical field of semiconductor manufacturing, in particular to a sputtering target diffusion welding assembly and method.

目前,現有的磁控濺射靶材元件在加工製造時,均採用在靶材元件放置於包套內,包套上預留脫氣口,用於從包套上引出脫氣管,脫氣管與真空設備連接,以對包套進行脫氣處理。對包套進行脫氣處理,在後續熱等靜壓處理過程中,雖然能夠避免空氣中的氣體雜質對形成的靶材元件的品質造成不良影響,但是,設置包套需要將靶材元件放置於包套內,再進行抽真空脫氣處理,整個工藝複雜,工序多,加工製造成本高。At present, when the existing magnetron sputtering target components are processed and manufactured, the target components are placed in the sheath, and the degassing port is reserved on the sheath, which is used to lead the degassing tube from the sheathing, and the degassing tube is connected with the vacuum Equipment connection for degassing the jacket. The sheath is degassed. In the subsequent hot isostatic pressing process, although the gas impurities in the air can be avoided from adversely affecting the quality of the formed target element, the setting of the sheath requires the target element to be placed in the In the sheath, the vacuum degassing treatment is carried out again, the whole process is complex, there are many procedures, and the processing and manufacturing costs are high.

本發明的目的在於提供濺射靶材擴散焊接組合體及方法,以解決現有技術中採用包套與抽真空技術存在的工藝複雜、工序多、加工製造成本高等問題。The object of the present invention is to provide a sputtering target diffusion welding assembly and method, so as to solve the problems of complex process, many procedures, and high manufacturing cost in the prior art of using sheathing and vacuuming technology.

為實現上述目的,本發明提供如下技術方案:To achieve the above object, the present invention provides the following technical solutions:

一方面,本發明提供了濺射靶材擴散焊接組合體,該擴散焊接組合體包括靶材元件和蓋板,靶材組件包括靶材和背板,背板的上、下表面中的至少一面開設內凹的槽,靶材嵌入槽後與背板齊平;In one aspect, the present invention provides a sputtering target diffusion welding assembly, the diffusion welding assembly includes a target element and a cover plate, the target assembly includes a target and a back plate, at least one of the upper and lower surfaces of the back plate A concave groove is set up, and the target is flush with the backplane after being embedded in the groove;

背板開槽一側表面覆蓋蓋板,背板與蓋板接觸面或外周密封,從而將靶材元件與蓋板密封為一個密閉整體,靶材密封於背板與蓋板組成的密閉容納腔內。The surface of the grooved side of the back plate is covered with the cover plate, and the contact surface or the periphery of the back plate and the cover plate is sealed, so that the target element and the cover plate are sealed as an airtight whole, and the target is sealed in the airtight chamber composed of the back plate and the cover plate Inside.

進一步地,所述蓋板為靶材組件,兩個靶材組件的靶材相對抵靠。Further, the cover plate is a target assembly, and the targets of the two target assemblies abut against each other.

進一步地,所述背板與蓋板接觸面之間的縫隙填充黏合劑,進而將靶材元件與蓋板密封。Further, the gap between the contact surface of the back plate and the cover plate is filled with adhesive, thereby sealing the target element and the cover plate.

進一步地,所述黏合劑為銀錫合金或銦。Further, the binder is silver-tin alloy or indium.

進一步地,所述背板與蓋板接觸面的外周焊接密封。Further, the outer periphery of the contact surface between the back plate and the cover plate is welded and sealed.

進一步地,所述焊接為攪拌摩擦焊或電子束焊接。Further, the welding is friction stir welding or electron beam welding.

進一步地,所述蓋板與靶材之間嵌入隔板。Further, a spacer is embedded between the cover plate and the target.

進一步地,所述靶材的材質為鈦或鎢;背板的材質為鋁、銅、鋁合金、銅合金中的一種;隔板的材質為不銹鋼、石墨、雲母中的一種;隔板的厚度為0.1-4mm;隔板的表面粗糙度為0.3-1.0µm。Further, the material of the target is titanium or tungsten; the material of the back plate is one of aluminum, copper, aluminum alloy, and copper alloy; the material of the separator is one of stainless steel, graphite, and mica; the thickness of the separator is 0.1-4mm; the surface roughness of the separator is 0.3-1.0µm.

另一方面,本發明還提供了一種濺射靶材擴散焊接方法,該方法採用上述濺射靶材擴散焊接組合體,該方法包括如下步驟:On the other hand, the present invention also provides a sputtering target diffusion welding method, which uses the above-mentioned sputtering target diffusion welding assembly, and the method includes the following steps:

步驟一:背板開設槽的表面鋪設蓋板,將蓋板與背板接觸面或外周密封;Step 1: Lay a cover plate on the surface of the groove on the back plate, and seal the contact surface or periphery of the cover plate and the back plate;

步驟二:將至少兩個擴散焊接組合體層疊放置於熱等靜壓爐內,進行熱等靜壓擴散焊接。Step 2: At least two diffusion welding assemblies are stacked and placed in a hot isostatic pressing furnace for hot isostatic pressing diffusion welding.

與現有技術相比,本發明的有益效果是:Compared with prior art, the beneficial effect of the present invention is:

1. 本發明的濺射靶材擴散焊接組合體,通過對蓋板與靶材元件之間的接觸面或外周密封,將靶材密封於蓋板與背板形成的密閉容納腔內,進行實現靶材的密封,相比現有技術中採用包套與抽真空的處理方式,本發明的濺射靶材擴散焊接組合體,一方面,省略了包套,減少抽真空工序;另一方面,節省了加工製造成本;1. The sputtering target diffusion welding assembly of the present invention, by sealing the contact surface or the periphery between the cover plate and the target element, seals the target material in the airtight accommodation chamber formed by the cover plate and the back plate to realize For the sealing of the target, compared with the processing method of wrapping and vacuuming in the prior art, the sputtering target diffusion welding combination of the present invention, on the one hand, omits the wrapping and reduces the vacuuming process; on the other hand, saves processing and manufacturing costs;

2. 本發明的濺射靶材擴散焊接組合體,通過在背板的頂部和底部均開設槽,並嵌入靶材,並將多個靶材組件上下依次層疊,並焊接相鄰兩個靶材元件的外周,即可形成一個整體,再將其放入熱等靜壓爐內,一方面,多個靶材元件同時進行熱等靜壓擴散焊接,提升熱等靜壓擴散焊接的效率,且同一批次的產品品質性能相同,均一性好;另一方面,將多個靶材元件焊接為一個整體,提高了熱等靜壓爐的利用效率;2. In the sputtering target diffusion welding assembly of the present invention, grooves are opened on the top and bottom of the back plate, and the target is embedded, and multiple target components are stacked up and down in sequence, and two adjacent targets are welded The outer periphery of the component can be formed as a whole, and then put into the hot isostatic pressing furnace. On the one hand, multiple target components are simultaneously hot isostatic pressing diffusion welding, which improves the efficiency of hot isostatic pressing diffusion welding, and The quality and performance of the same batch of products are the same, and the uniformity is good; on the other hand, multiple target components are welded into a whole, which improves the utilization efficiency of the hot isostatic pressing furnace;

3. 本發明的濺射靶材擴散焊接方法,通過將多個焊接為一體的靶材元件層疊放入熱等靜壓爐,進行熱等靜壓擴散焊接,冷卻後,再將其焊接位置拆開,提升了生產加工效率,產品品質均一性好,操作簡單方便,有利於大批量生產。3. In the sputtering target diffusion welding method of the present invention, a plurality of welded target elements are laminated into a hot isostatic pressing furnace for hot isostatic pressing diffusion welding, and after cooling, the welding position is disassembled. Open, improve the production and processing efficiency, good product quality uniformity, simple and convenient operation, which is conducive to mass production.

下面將結合本發明實施例中的附圖,對本發明實施例中的技術方案進行清楚、完整地描述,顯然,所描述的實施例僅僅是本發明一部分實施例,而不是全部的實施例。基於本發明中的實施例,本領域普通技術人員在沒有做出創造性勞動前提下所獲得的所有其他實施例,都屬於本發明保護的範圍。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

在本發明的描述中,需要說明的是,術語“中心”、“上”、“下”、“左”、“右”、“豎直”、“水準”、“內”、“外”、“前”、“後”等指示的方位或位置關係為基於附圖所示的方位或位置關係,僅是為了便於描述本發明和簡化描述,而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造和操作,因此不能理解為對本發明的限制,本發明中,還需要說明的是,術語“安裝”、“連接”應做廣義理解,例如可以固定連接,也可以是可拆卸連接,也可以是機械連接,也可以是通過中間媒介間接連接,也可以電連接可以通過具體情況理解術語在本發明中的具體含義。In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", The orientation or positional relationship indicated by "front", "rear", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have Specific orientation, construction and operation in a specific orientation, so it should not be construed as a limitation to the present invention. In the present invention, it should also be explained that the terms "installation" and "connection" should be understood in a broad sense, for example, they can be fixedly connected, or It can be a detachable connection, a mechanical connection, an indirect connection through an intermediary, or an electrical connection. The specific meanings of the terms in the present invention can be understood according to specific circumstances.

實施例Example 11

本實施例中公開了一種濺射靶材擴散焊接組合體,如圖3所示,該擴散焊接組合體包括靶材元件1,如圖1-2所示,靶材組件包括靶材11和背板12,優選的,靶材11和背板12均為圓柱形結構,背板12頂部開設內凹的槽13,靶材11嵌入槽13內,優選的,槽13為圓柱形,靶材11的頂部與背板12的頂部齊平。This embodiment discloses a sputtering target diffusion welding assembly, as shown in Figure 3, the diffusion welding assembly includes a target element 1, as shown in Figure 1-2, the target assembly includes a target 11 and a back Plate 12, preferably, the target material 11 and the back plate 12 are both cylindrical structures, the top of the back plate 12 is provided with a concave groove 13, and the target material 11 is embedded in the groove 13, preferably, the groove 13 is cylindrical, and the target material 11 The top of the top is flush with the top of the backplane 12.

所述擴散焊接組合體包括靶材元件1和焊接於靶材組件1的頂部的蓋板2,具體的,採用攪拌摩擦焊沿靶材元件1與蓋板2接觸面的外周焊接一圈,進而將靶材11密封於蓋板2與背板12組成的密閉容納腔內。The diffusion welding assembly includes a target element 1 and a cover plate 2 welded to the top of the target assembly 1. Specifically, friction stir welding is used to weld a circle along the outer circumference of the contact surface between the target element 1 and the cover plate 2, and then The target material 11 is sealed in the airtight chamber formed by the cover plate 2 and the back plate 12 .

蓋板2的材質與背板12的材質可以相同,也可以不同。The material of the cover plate 2 and the material of the back plate 12 may be the same or different.

為了避免靶材11與蓋板2之間進行擴散焊接,便於後續順利的分離靶材11和蓋板2,優選的,在蓋板2與靶材11之間嵌入隔板3。In order to avoid diffusion welding between the target material 11 and the cover plate 2 and to facilitate subsequent smooth separation of the target material 11 and the cover plate 2 , preferably, a separator 3 is embedded between the cover plate 2 and the target material 11 .

靶材11的材質為鈦或鎢,優選的,靶材11的材質為鈦。The material of the target 11 is titanium or tungsten, preferably, the material of the target 11 is titanium.

所述背板12的材質為鋁、銅、鋁合金、銅合金中的一種,優選的,背板12的材質為鋁合金6061。The material of the back plate 12 is one of aluminum, copper, aluminum alloy, and copper alloy. Preferably, the material of the back plate 12 is aluminum alloy 6061.

所述隔板3的材質為不銹鋼、石墨、雲母中的一種,優選的,隔板3的材質為不銹鋼。The material of the separator 3 is one of stainless steel, graphite and mica. Preferably, the material of the separator 3 is stainless steel.

所述隔板3的厚度為0.1-4mm,隔板3的厚度低於0.1mm,在後續的熱等靜壓擴散焊接過程中,蓋板2及靶材11膨脹對其進行擠壓,容易導致隔板3破碎;隔板3的厚度大於4mm,導致蓋板2與背板12之間的間隙過大,通過焊接難以實現對蓋板2與背板12的密封。優選的,隔板3的厚度為2mm。The thickness of the separator 3 is 0.1-4 mm, and the thickness of the separator 3 is less than 0.1 mm. During the subsequent hot isostatic pressing diffusion welding process, the cover plate 2 and the target material 11 expand and squeeze it, which is easy to cause The partition 3 is broken; the thickness of the partition 3 is greater than 4 mm, resulting in an excessively large gap between the cover 2 and the back 12 , and it is difficult to seal the cover 2 and the back 12 by welding. Preferably, the thickness of the separator 3 is 2 mm.

隔板3的表面粗糙度越低,也就是說,隔板3的表面越光滑,在後續的擴散焊接過程中,隔板3與蓋板2及靶材11之間越難發生原子擴散,因此,設計隔板3的表面粗糙度為0.3-1.0µm,優選的,隔板3的表面粗糙度為1µm。The lower the surface roughness of the separator 3, that is, the smoother the surface of the separator 3, the harder it is for atomic diffusion to occur between the separator 3, the cover plate 2, and the target 11 during the subsequent diffusion welding process. , the surface roughness of the separator 3 is designed to be 0.3-1.0 μm, preferably, the surface roughness of the separator 3 is 1 μm.

本發明的濺射靶材擴散焊接組合體,通過對蓋板與靶材元件之間的接觸面外周焊接一圈,將靶材密封於蓋板與背板形成的密閉容納腔內,進行實現靶材的密封,相比現有技術中採用包套與抽真空的處理方式,本發明的濺射靶材擴散焊接組合體,一方面,省略了包套,減少抽真空工序;另一方面,節省了加工製造成本。In the sputtering target diffusion welding combination of the present invention, the target is sealed in the airtight chamber formed by the cover plate and the back plate by welding the outer circumference of the contact surface between the cover plate and the target element, and the target is realized. The sealing of the material, compared with the processing method of wrapping and vacuuming in the prior art, the sputtering target diffusion welding assembly of the present invention, on the one hand, omits the wrapping and reduces the vacuuming process; on the other hand, saves Processing and manufacturing costs.

實施例Example 22

與實施例1不同的是,本實施例中公開了一種濺射靶材擴散焊接組合體,如圖4所示,該擴散焊接組合體包括靶材元件1,如圖1-2所示,靶材組件包括靶材11和背板12,優選的,靶材11和背板12均為圓柱形結構,背板12頂部開設內凹的槽13,靶材11嵌入槽13內,優選的,槽13為圓柱形,靶材11的頂部與背板12的頂部齊平。Different from Embodiment 1, this embodiment discloses a sputtering target diffusion welding assembly, as shown in Figure 4, the diffusion welding assembly includes a target element 1, as shown in Figure 1-2, the target The material assembly includes a target material 11 and a back plate 12. Preferably, the target material 11 and the back plate 12 are both cylindrical structures, and the top of the back plate 12 is provided with a concave groove 13, and the target material 11 is embedded in the groove 13. Preferably, the groove 13 is cylindrical, and the top of the target 11 is flush with the top of the back plate 12 .

所述擴散焊接組合體為兩個靶材組件1上下放置,使得兩個靶材組件1的兩個靶材相抵持,並採用電子束焊接沿兩個靶材元件1接觸面的外周焊接一圈,即將兩個背板12接觸面的外周焊接一圈,進而將兩個靶材元件1連接為一個整體,實現兩個靶材11密封於兩個背板12組成的密閉容納腔內。The diffusion welding assembly is two target components 1 placed up and down, so that the two targets of the two target components 1 are against each other, and electron beam welding is used to weld a circle along the outer circumference of the contact surface of the two target components 1 That is, the outer circumference of the contact surface of the two back plates 12 is welded in a circle, and then the two target elements 1 are connected as a whole, so that the two targets 11 are sealed in the airtight chamber formed by the two back plates 12 .

為了避免兩個靶材11之間進行擴散焊接,優選的,在蓋板2與靶材11之間嵌入隔板3。In order to avoid diffusion welding between the two targets 11 , preferably, a spacer 3 is embedded between the cover plate 2 and the targets 11 .

實施例Example 33

與實施例1不同的是,本實施例中公開了一種濺射靶材擴散焊接組合體,如圖5所示,該擴散焊接組合體包括靶材元件1,靶材元件1包括靶材11和背板12,優選的,靶材11和背板12均為圓柱形結構,背板12頂部和底部均開設內凹的槽13,兩個靶材11分別嵌入兩個槽13內,優選的,槽13為圓柱形,靶材11的頂部與背板12的頂部齊平。Different from Embodiment 1, this embodiment discloses a sputtering target diffusion welding assembly. As shown in FIG. 5, the diffusion welding assembly includes a target element 1, and the target element 1 includes a target 11 and The back plate 12, preferably, the target material 11 and the back plate 12 are both cylindrical structures, the top and bottom of the back plate 12 are provided with concave grooves 13, and the two targets 11 are respectively embedded in the two grooves 13, preferably, The groove 13 is cylindrical, and the top of the target 11 is flush with the top of the back plate 12 .

所述擴散焊接組合體為兩個上下放置的靶材組件1,使得兩個靶材元件1的兩個靶材相抵持,通過在背板與蓋板接觸面之間的縫隙填充黏合劑,進而將靶材元件與蓋板密封,黏合劑為銀錫合金或銦,即將兩個背板12接觸面黏合為一體,進而將兩個靶材元件1連接為一個整體,實現兩個靶材11密封於兩個背板12組成的密閉容納腔內。The diffusion welding assembly is two target components 1 placed up and down, so that the two targets of the two target elements 1 are against each other, and the gap between the contact surface of the back plate and the cover plate is filled with adhesive, and then The target element and the cover plate are sealed, and the adhesive is silver-tin alloy or indium, that is, the contact surfaces of the two back plates 12 are bonded together, and then the two target elements 1 are connected as a whole to realize the sealing of the two targets 11 In the airtight accommodating cavity formed by two backboards 12 .

為了避免兩個靶材11之間進行擴散焊接,優選的,在蓋板2與靶材11之間嵌入隔板3。In order to avoid diffusion welding between the two targets 11 , preferably, a spacer 3 is embedded between the cover plate 2 and the targets 11 .

本實施例中,通過在背板的頂部和底部均開設槽13,並嵌入靶材11,並將多個靶材組件1上下依次層疊,並焊接相鄰兩個靶材元件1的外周,即可形成一個整體,再將其放入熱等靜壓爐內,一方面,多個靶材元件1同時進行熱等靜壓擴散焊接,提升熱等靜壓擴散焊接的效率,且同一批次的產品品質性能相同,均一性好;另一方面,將多個靶材元件1焊接為一個整體,提高了熱等靜壓爐的利用效率。In this embodiment, grooves 13 are opened on the top and bottom of the back plate, and targets 11 are embedded, and a plurality of target components 1 are stacked up and down in sequence, and the outer peripheries of two adjacent target elements 1 are welded, that is It can be formed as a whole, and then put into the hot isostatic pressing furnace. On the one hand, multiple target elements 1 are subjected to hot isostatic pressure diffusion welding at the same time, which improves the efficiency of hot isostatic pressure diffusion welding, and the same batch of The product quality and performance are the same, and the uniformity is good; on the other hand, multiple target elements 1 are welded into a whole, which improves the utilization efficiency of the hot isostatic pressing furnace.

實施例Example 44

本實施例中提供了一種濺射靶材擴散焊接方法,該方法採用實施例1中所述濺射靶材擴散焊接組合體,該方法包括如下步驟:This embodiment provides a sputtering target diffusion welding method, which uses the sputtering target diffusion welding assembly described in Example 1, and the method includes the following steps:

步驟一: 將蓋板2覆蓋於靶材元件1的上表面,將蓋板2與靶材元件1接觸面的外周焊接一圈;Step 1: Cover the upper surface of the target element 1 with the cover plate 2, and weld the outer circumference of the contact surface between the cover plate 2 and the target element 1;

步驟二: 將至少兩個擴散焊接組合體層疊放置於熱等靜壓爐內,進行熱等靜壓擴散焊接。Step 2: At least two diffusion welding assemblies are stacked and placed in a hot isostatic pressing furnace for hot isostatic pressing diffusion welding.

本發明的濺射靶材擴散焊接方法,通過將多個焊接為一體的靶材元件層疊放入熱等靜壓爐,進行熱等靜壓擴散焊接,冷卻後,再將其焊接位置拆開,提升了生產加工效率,產品品質均一性好,操作簡單方便,有利於大批量生產。In the sputtering target diffusion welding method of the present invention, a plurality of welded target elements are stacked into a hot isostatic pressing furnace for hot isostatic pressing diffusion welding, and after cooling, the welding position is disassembled. The production and processing efficiency is improved, the product quality is uniform, the operation is simple and convenient, and it is beneficial to mass production.

實施例Example 55

本實施例中提供了一種濺射靶材擴散焊接方法,該方法採用實施例2中所述濺射靶材擴散焊接組合體,該方法包括如下步驟:This embodiment provides a sputtering target diffusion welding method, which uses the sputtering target diffusion welding assembly described in Example 2, and the method includes the following steps:

步驟一: 將兩個靶材元件1上下放置,在兩個靶材11之間插入隔板3,並使得兩個靶材11相抵持,將兩個靶材元件1接觸面的外周焊接一圈;Step 1: Place the two target elements 1 up and down, insert the partition 3 between the two targets 11, and make the two targets 11 resist each other, and weld the outer circumference of the contact surface of the two target elements 1 in a circle ;

步驟二: 將至少兩個擴散焊接組合體層疊放置於熱等靜壓爐內,進行熱等靜壓擴散焊接。Step 2: At least two diffusion welding assemblies are stacked and placed in a hot isostatic pressing furnace for hot isostatic pressing diffusion welding.

實施例Example 66

本實施例中提供了一種濺射靶材擴散焊接方法,該方法採用實施例3中所述濺射靶材擴散焊接組合體,該方法包括如下步驟:This embodiment provides a sputtering target diffusion welding method, which uses the sputtering target diffusion welding assembly described in Example 3, and the method includes the following steps:

步驟一: 將多個靶材元件1上下放置,在相鄰兩個靶材11之間插入隔板3,並使得兩個靶材11相抵持,將相鄰兩個靶材元件1接觸面之間採用黏合劑黏合;Step 1: Place a plurality of target elements 1 up and down, insert a partition 3 between two adjacent targets 11, and make the two targets 11 resist each other, place the contact surface of two adjacent target elements 1 Adhesive bonding is used between;

步驟二: 將至少兩個擴散焊接組合體層疊放置於熱等靜壓爐內,進行熱等靜壓擴散焊接。Step 2: At least two diffusion welding assemblies are stacked and placed in a hot isostatic pressing furnace for hot isostatic pressing diffusion welding.

對比例comparative example 11

本實施例中採用包套+抽真空的方式進行濺射靶材擴散焊接,具體的,將靶材組件放置於密封的包套內,將包套抽真空脫氣,再將其放入熱等靜壓處理爐中,進行擴散焊接,擴散焊接結束後,將其冷卻,再拆除包套。In this embodiment, the sputtering target diffusion welding is carried out in the way of sheath + vacuum pumping. Specifically, the target assembly is placed in a sealed sheath, the sheath is vacuumed and degassed, and then placed in a hot water, etc. Diffusion welding is carried out in the static pressure treatment furnace. After the diffusion welding is completed, it is cooled and then the sheath is removed.

效果實施例Effect example

實施例1-3的濺射靶材擴散焊接組合體,經過熱等靜壓擴散焊接處理後,將焊接處拆開,即可得到擴散焊接後的靶材元件,擴散焊接後的靶材元件表面平整,原子擴散均勻,產品性能良好。For the sputtering target diffusion welding combination of Examples 1-3, after the hot isostatic pressure diffusion welding treatment, the welded part is disassembled to obtain the target element after diffusion welding, and the surface of the target element after diffusion welding is Smooth, uniform atomic diffusion, good product performance.

對於本領域技術人員而言,顯然本發明不限於上述示範性實施例的細節,而且在不背離本發明的精神或基本特徵的情況下,能夠以其他的具體形式實現本發明。因此,無論從哪一點來看,均應將實施例看作是示範性的,而且是非限制性的,本發明的範圍由所附請求項而不是上述說明限定,因此旨在將落在請求項的等同要件的含義和範圍內的所有變化囊括在本發明內。不應將請求項中的任何附圖標記視為限制所涉及的請求項。It will be apparent to those skilled in the art that the invention is not limited to the details of the above-described exemplary embodiments, but that the invention can be embodied in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, no matter from any point of view, the embodiments should be regarded as exemplary and non-restrictive, and the scope of the present invention is defined by the appended claims rather than the above description, so it is intended to All changes within the meaning and range of equivalents of the elements are embraced in the present invention. Any reference sign in a claim should not be construed as limiting the claim to which it relates.

此外,應當理解,雖然本說明書按照實施方式加以描述,但並非每個實施方式僅包含一個獨立的技術方案,說明書的這種敘述方式僅僅是為清楚起見,本領域技術人員應當將說明書作為一個整體,各實施例中的技術方案也可以經適當組合,形成本領域技術人員可以理解的其他實施方式。In addition, it should be understood that although this specification is described according to implementation modes, not each implementation mode only contains an independent technical solution, and this description in the specification is only for clarity, and those skilled in the art should regard the specification as a Overall, the technical solutions in the various embodiments can also be properly combined to form other implementations that can be understood by those skilled in the art.

1:靶材組件 11:靶材 12:背板 13:槽 2:蓋板 3:隔板 1: Target components 11: Target 12: Backplane 13: Slot 2: Cover 3: Partition

[圖1]為靶材元件的結構示意圖; [圖2]為背板的俯視圖; [圖3]實施例1中濺射靶材擴散焊接組合體的示意圖; [圖4]實施例2中濺射靶材擴散焊接組合體的示意圖; [圖5]實施例3中濺射靶材擴散焊接組合體的示意圖。 [Fig. 1] is a structural schematic diagram of a target element; [Fig. 2] is a top view of the backplane; [Fig. 3] A schematic diagram of the sputtering target diffusion welding assembly in embodiment 1; [Fig. 4] A schematic diagram of the sputtering target diffusion welding assembly in embodiment 2; [ Fig. 5 ] A schematic diagram of a sputtering target diffusion-welded assembly in Example 3.

11:靶材 11: Target

12:背板 12: Backplane

3:隔板 3: Partition

Claims (9)

一種濺射靶材擴散焊接組合體,其中,該擴散焊接組合體包括靶材元件和蓋板,靶材組件包括靶材和背板,背板的上、下表面中的至少一面開設內凹的槽,靶材嵌入槽後與背板齊平;背板開槽一側表面覆蓋蓋板,背板與蓋板接觸面或外周密封,從而將靶材組件與蓋板密封為一個密閉整體,靶材密封於背板與蓋板組成的密閉容納腔內。A sputtering target diffusion welding assembly, wherein the diffusion welding assembly includes a target element and a cover plate, the target assembly includes a target and a back plate, and at least one of the upper and lower surfaces of the back plate is provided with a concave After the target is embedded in the groove, it is flush with the back plate; the surface of the slotted side of the back plate covers the cover plate, and the contact surface or outer periphery of the back plate and the cover plate is sealed, so that the target component and the cover plate are sealed as an airtight whole. The material is sealed in the airtight accommodating cavity formed by the back plate and the cover plate. 如請求項1所述濺射靶材擴散焊接組合體,其中,所述蓋板為靶材組件,兩個靶材組件的靶材相對抵靠。The sputtering target diffusion welding assembly according to claim 1, wherein the cover plate is a target assembly, and the targets of the two target assemblies are relatively abutted against. 如請求項1所述濺射靶材擴散焊接組合體,其中,所述背板與蓋板接觸面之間的縫隙填充黏合劑,進而將靶材元件與蓋板密封。The sputtering target diffusion welding assembly according to claim 1, wherein the gap between the contact surface of the back plate and the cover plate is filled with adhesive, so as to seal the target element and the cover plate. 如請求項3所述濺射靶材擴散焊接組合體,其中,所述黏合劑為銀錫合金或銦。The sputtering target diffusion welding assembly according to claim 3, wherein the binder is silver-tin alloy or indium. 如請求項1所述濺射靶材擴散焊接組合體,其中,所述背板與蓋板接觸面的外周焊接密封。The sputtering target diffusion welding assembly according to claim 1, wherein the outer periphery of the contact surface between the back plate and the cover plate is sealed by welding. 如請求項5所述濺射靶材擴散焊接組合體,其中,所述焊接為攪拌摩擦焊或電子束焊接。The sputtering target diffusion welding combination according to claim 5, wherein the welding is friction stir welding or electron beam welding. 如請求項1-6項中任一項所述濺射靶材擴散焊接組合體,其中,所述蓋板與靶材之間嵌入隔板。The sputtering target diffusion welding assembly according to any one of claims 1-6, wherein a partition is embedded between the cover plate and the target. 如請求項7所述濺射靶材擴散焊接組合體,其中,所述靶材的材質為鈦或鎢;背板的材質為鋁、銅、鋁合金、銅合金中的一種;隔板的材質為不銹鋼、石墨、雲母中的一種;隔板的厚度為0.1-4mm;隔板的表面粗糙度為0.3-1.0µm。The sputtering target diffusion welding assembly as described in claim 7, wherein the material of the target is titanium or tungsten; the material of the back plate is one of aluminum, copper, aluminum alloy, and copper alloy; the material of the separator It is one of stainless steel, graphite and mica; the thickness of the separator is 0.1-4mm; the surface roughness of the separator is 0.3-1.0µm. 一種濺射靶材擴散焊接方法,其中,該方法採用如請求項1-8項中任一項所述濺射靶材擴散焊接組合體,該方法包括如下步驟: 步驟一:背板開設槽的表面鋪設蓋板,將蓋板與背板接觸面或外周密封; 步驟二: 將至少兩個擴散焊接組合體層疊放置於熱等靜壓爐內,進行熱等靜壓擴散焊接。 A sputtering target diffusion welding method, wherein the method adopts the sputtering target diffusion welding combination as described in any one of claim items 1-8, the method comprises the following steps: Step 1: Lay a cover plate on the surface of the groove on the back plate, and seal the contact surface or periphery of the cover plate and the back plate; Step 2: At least two diffusion welding assemblies are stacked and placed in a hot isostatic pressing furnace for hot isostatic pressing diffusion welding.
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