CN114799453A - Welding method of high-purity copper target - Google Patents
Welding method of high-purity copper target Download PDFInfo
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- CN114799453A CN114799453A CN202210343399.8A CN202210343399A CN114799453A CN 114799453 A CN114799453 A CN 114799453A CN 202210343399 A CN202210343399 A CN 202210343399A CN 114799453 A CN114799453 A CN 114799453A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/021—Isostatic pressure welding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K15/00—Electron-beam welding or cutting
- B23K15/0046—Welding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/24—Preliminary treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/26—Auxiliary equipment
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Abstract
The invention provides a welding method of a high-purity copper target, which comprises the following steps: (1) processing the copper target blank into a step shape, wherein the step thickness is consistent with the depth of a copper back plate groove, and performing thread turning treatment on the welding surface of the copper back plate; (2) cleaning and drying the processed copper target blank and the processed copper back plate; (3) and assembling the copper target blank and the copper back plate, and sequentially carrying out electron beam welding and hot isostatic pressing welding. The welding method simplifies the welding process, reduces the cost, simplifies the operation and simultaneously ensures the welding quality.
Description
Technical Field
The invention belongs to the field of target manufacturing, relates to a target welding method, and particularly relates to a high-purity copper target welding method.
Background
Hot Isostatic Pressing (Hot Isostatic Pressing, HIP): a technology for pressing the workpiece to be processed at high temp. by using the high-pressure inertial gas or nitrogen as pressure-transmitting medium features that the workpiece is pressed by the uniform static pressure in a sealed container. This method is commonly used for powder sintering, material densification, diffusion welding, etc. The method has the advantages of integrating the advantages of hot pressing and isostatic pressing. The disadvantages are that the equipment is expensive and the productivity is low.
Electron Beam Welding (EB): the electron beam welding is to bombard the welding surface in vacuum or non-vacuum with accelerated and focused electron beam to melt the workpiece to be welded for welding. Its advantages are no need of welding rod, not oxidizing easily, high repeatability and less thermal deformation, so that it can be widely used in such industries as aeronautics and astronautics, atomic energy, national defence, military industry, automobile and electronic instrument.
With the development of integrated circuits, the width of metal interconnection lines is becoming thinner and thinner, the RC delay of the interconnection lines becomes a major problem affecting the speed of the circuits, and the replacement of copper wiring for aluminum wiring is a necessary trend of nanoscale wiring of integrated circuits. However, the high-end process has very strict requirements on the crystal grain and the crystal orientation of the ultra-pure copper and copper alloy target materials, so that the welding of the copper and copper alloy target materials becomes a great problem in the manufacturing process of the target materials.
The conventional copper target is produced by adopting a method that a target blank and a back plate are welded in a hot isostatic pressing mode and then are welded by an electron beam. Therefore, the production process of the target material has a plurality of complicated procedures, the target material needs to be welded and sheathed before hot isostatic pressing, then hot isostatic pressing can be carried out after degassing, and the sheath removing treatment is needed after the hot isostatic pressing is finished.
CN111136396A discloses a diffusion welding method for copper target and back plate, which comprises the following steps: (1) preparing a copper target material, a back plate with a groove and a cushion block, wherein the areas of the copper target material and the cushion block are equal to the bottom area of the groove of the back plate; (2) sequentially placing the copper target material and the cushion block in the step (1) into a groove of a back plate to complete assembly treatment, and then placing the whole body into a jacket; (3) sealing the sheath obtained in the step (2) and then degassing; (4) and (4) carrying out hot isostatic pressing welding on the sheath degassed in the step (3), and then removing the sheath and the cushion block to finish diffusion welding of the copper target and the back plate.
CN105014171A discloses a tungsten/copper electron beam brazing fast connection method, which is realized by the following steps: pretreating the surfaces of the base metal and the brazing filler metal, and removing oil stains, impurities and oxidation films on the surfaces to be welded; the brazing filler metal is arranged between base metals, fixed by a clamp, placed in an electron beam device, set with parameters and brazed; monitoring the tungsten surface temperature through a thermal infrared imager and an infrared thermometer; monitoring the block temperature of the Cu alloy by a thermocouple; and after welding, rapidly cooling to room temperature, taking out the welding sample, and then putting the welding sample into a vacuum annealing furnace for annealing treatment.
Disclosure of Invention
In order to solve the technical problems in the prior art, the invention provides the welding method of the high-purity copper target, which simplifies the welding process, reduces the cost, simplifies the operation and ensures the welding quality.
In order to achieve the technical effect, the invention adopts the following technical scheme:
the invention provides a welding method of a high-purity copper target, which comprises the following steps:
(1) processing the copper target blank into a step shape, wherein the step thickness is consistent with the depth of a copper back plate groove, and performing thread turning treatment on the welding surface of the copper back plate;
(2) cleaning and drying the processed copper target blank and the processed copper back plate;
(3) and assembling the copper target blank and the copper back plate, and sequentially carrying out electron beam welding and hot isostatic pressing welding.
The conventional copper target welding process is mainly produced by the way of hot isostatic pressing welding of a target blank and a back plate and then electron beam welding. According to the invention, the copper target blank is processed into the step shape, the step thickness is consistent with the depth of the copper back plate groove, three times of electron beam welding are carried out, the electron beam welding effect is ensured, the sheath is not required to be manufactured after the electron beam welding, the hot isostatic pressing welding can be directly carried out, the sheath welding and the sheath degassing process are omitted, the production cost is greatly reduced, the production efficiency is improved, and the abnormal target blank crystal grains caused by the sheath are avoided.
As a preferred embodiment of the present invention, the roughness of the bonding surface of the copper target blank in step (1) is < 0.4. mu.m, such as 0.1. mu.m, 0.15. mu.m, 0.2. mu.m, 0.25. mu.m, 0.3. mu.m, or 0.35. mu.m, but is not limited to the values listed above, and other values not listed within this range are equally applicable.
As a preferable technical scheme of the invention, after the thread turning treatment in the step (1), the thread pitch of the welding surface of the copper back plate is 0.2-0.5 mm, and the thread depth is 0.1-0.3 mm.
The pitch of the thread may be 0.25mm, 0.3mm, 0.35mm, 0.4mm or 0.45mm, and the depth of the thread may be 0.12mm, 0.15mm, 0.18mm, 0.2mm, 0.22mm, 0.25mm or 0.28mm, but the thread is not limited to the above-mentioned values, and other values not listed in the above-mentioned ranges of values are also applicable.
In the invention, the fit tolerance of the copper back plate and the copper target blank can be (0/+0.3) mm.
In a preferred embodiment of the present invention, the cleaning in step (2) is ultrasonic cleaning.
In a preferred embodiment of the present invention, the cleaning liquid for ultrasonic cleaning includes IPA or alcohol.
In a preferred embodiment of the present invention, the ultrasonic cleaning time is 10 to 15min, such as 11min, 12min, 13min or 14min, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned range are also applicable.
Preferably, the temperature of the ultrasonic cleaning is 60 to 80 ℃, such as 62 ℃, 65 ℃, 68 ℃, 70 ℃, 72 ℃, 75 ℃ or 78 ℃, but not limited to the recited values, and other values not recited in the range of the values are also applicable.
In a preferred embodiment of the present invention, the drying in step (2) is vacuum drying.
Preferably, the vacuum degree of the vacuum drying is less than 0.01 Pa.
Preferably, the vacuum drying time is not less than 1 hour, such as 1.5 hours, 2 hours, 2.5 hours, 3 hours, 3.5 hours, 4 hours, 4.5 hours, or 5 hours, but not limited to the recited values, and other values not recited in the range of the values are also applicable.
As a preferred embodiment of the present invention, the electron beam welding speed in the step (3) is 10 to 15mm/s, for example, 10.5mm/s, 11mm/s, 11.5mm/s, 12mm/s, 12.5mm/s, 13mm/s, 13.5mm/s, 14mm/s or 14.5mm/s, but is not limited to the above-mentioned values, and other values not shown in the above-mentioned value range are also applicable.
Preferably, the electron beam welding time is 100-120s, such as 102s, 105s, 108s, 110s, 112s, 115s or 118s, but not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the electron beam current for electron beam welding is 30-60 mA, such as 35mA, 40mA, 45mA, 50mA or 55mA, but not limited to the recited values, and other values in the range are also applicable.
Preferably, the number of times of the electron beam welding is 3 to 5 times, such as 3 times, 4 times, or 5 times.
Preferably, the depth of the weld pool of the electron beam welding is 5-8 mm, such as 5.5mm, 6mm, 6.5mm, 7mm or 7.5mm, but not limited to the values listed, and other values not listed in the range of the values are also applicable.
In a preferred embodiment of the present invention, the hot isostatic pressing welding in step (3) is performed at a temperature of 200 to 300 ℃, for example, 210 ℃, 220 ℃, 230 ℃, 240 ℃, 250 ℃, 260 ℃, 270 ℃, 280 ℃ or 290 ℃, but the temperature is not limited to the above-mentioned values, and other values not shown in the above-mentioned range are also applicable.
Preferably, the hot isostatic pressing welding pressure is 100 to 150MPa, such as 100MPa, 105MPa, 110MPa, 115MPa, 120MPa, 125MPa, 130MPa, 135MPa, 140MPa, 145MPa or 150MPa, but not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the time for the hot isostatic pressing welding is 6-8 h, such as 6.2h, 6.5h, 6.8h, 7h, 7.2h, 7.5h or 7.8h, etc., but not limited to the recited values, and other values not recited in the range of the values are also applicable.
In the present invention, the target blank material may be high purity copper or copper alloy, and the backing plate material may be CuCr alloy or CuZn alloy.
As a preferable technical solution of the present invention, the welding method of the high-purity copper-based target includes the steps of:
(1) processing a copper target blank into a step shape, wherein the thickness of the step is consistent with the depth of a copper back plate groove, the roughness of the welding surface of the copper target blank is less than 0.4 mu m, and the welding surface of the copper back plate is subjected to thread turning treatment, wherein the thread pitch is 0.2-0.5 mm, and the thread depth is 0.1-0.3 mm;
(2) carrying out ultrasonic cleaning and vacuum drying treatment on the processed copper target blank and the processed copper back plate;
the cleaning liquid for ultrasonic cleaning comprises IPA or alcohol, the temperature is 60-80 ℃, and the time is 10-15 min;
the vacuum degree of the vacuum drying is less than 0.01Pa, and the time is not less than 1 h;
(3) assembling the copper target blank and the copper back plate, and sequentially carrying out electron beam welding and hot isostatic pressing welding;
the speed of the electron beam welding is 10-15 mm/s, the time is 100-120s, the electron beam current is 30-60 mA, the depth of a welding pool is 5-8 mm, and the times are 3-5;
the hot isostatic pressing welding temperature is 200-300 ℃, and the pressure is 100-150 Mpa. The time is 6-8 h.
Compared with the prior art, the invention has at least the following beneficial effects:
the invention provides a welding method of a high-purity copper target, which simplifies the welding process, reduces the cost, simplifies the operation and ensures the welding quality.
Drawings
Fig. 1 is a schematic view illustrating the assembly of a copper target blank and a copper backing plate in the welding method of the high-purity copper target according to the present invention.
The present invention is described in further detail below. The following examples are merely illustrative of the present invention and do not represent or limit the scope of the claims, which are defined by the claims.
Detailed Description
To better illustrate the invention and to facilitate the understanding of the technical solutions thereof, typical but non-limiting examples of the invention are as follows:
example 1
The embodiment provides a welding method of a high-purity copper target, which comprises the following steps:
(1) processing a copper target blank into a step shape, wherein the thickness of the step is consistent with the depth of a copper back plate groove, the roughness of the welding surface of the copper target blank is less than 0.4 mu m, and the welding surface of the copper back plate is subjected to thread turning treatment, wherein the thread pitch is 0.2mm, and the thread depth is 0.1 mm;
(2) carrying out ultrasonic cleaning and vacuum drying treatment on the processed copper target blank and the processed copper back plate;
the cleaning liquid for ultrasonic cleaning is IPA, the temperature is 60 ℃, and the time is 15 min;
the vacuum degree of the vacuum drying is less than 0.01Pa, and the time is 1 h;
(3) assembling the copper target blank and the copper back plate (shown in figure 1), and sequentially carrying out electron beam welding and hot isostatic pressing welding;
the speed of the electron beam welding is 10mm/s, the time is 120s, the electron beam current is 30mA, the depth of a welding pool is 5mm, and the times are 3;
the temperature of the hot isostatic pressing welding is 200 ℃, and the pressure is 120 Mpa. The time is 8 h.
Example 2
The embodiment provides a welding method of a high-purity copper target, which comprises the following steps:
(1) processing a copper target blank into a step shape, wherein the thickness of the step is consistent with the depth of a copper back plate groove, the roughness of the welding surface of the copper target blank is less than 0.4 mu m, and the welding surface of the copper back plate is subjected to thread turning treatment, wherein the thread pitch is 0.5mm, and the thread depth is 0.3 mm;
(2) carrying out ultrasonic cleaning and vacuum drying treatment on the processed copper target blank and the processed copper back plate;
the cleaning liquid for ultrasonic cleaning is IPA, the temperature is 80 ℃, and the time is 10 min;
the vacuum degree of the vacuum drying is less than 0.01Pa, and the time is 2 hours;
(3) assembling the copper target blank and the copper back plate, and sequentially carrying out electron beam welding and hot isostatic pressing welding;
the speed of the electron beam welding is 15mm/s, the time is 100s, the electron beam current is 60mA, the depth of a welding pool is 8mm, and the times are 5;
the temperature of the hot isostatic pressing welding is 300 ℃, and the pressure is 110 Mpa. The time is 6 h.
Example 3
The embodiment provides a welding method of a high-purity copper target, which comprises the following steps:
(1) processing a copper target blank into a step shape, wherein the thickness of the step is consistent with the depth of a copper back plate groove, the roughness of the welding surface of the copper target blank is less than 0.4 mu m, and the welding surface of the copper back plate is subjected to thread turning treatment, wherein the thread pitch is 0.3mm, and the thread depth is 0.15 mm;
(2) carrying out ultrasonic cleaning and vacuum drying treatment on the processed copper target blank and the processed copper back plate;
the cleaning liquid for ultrasonic cleaning is IPA, the temperature is 65 ℃, and the time is 12 min;
the vacuum degree of the vacuum drying is less than 0.01Pa, and the time is 1.5 h;
(3) assembling the copper target blank and the copper back plate, and sequentially carrying out electron beam welding and hot isostatic pressing welding;
the speed of the electron beam welding is 12mm/s, the time is 115s, the electron beam current is 35mA, the depth of a welding pool is 6mm, and the times are 4;
the temperature of the hot isostatic pressing welding is 220 ℃, and the pressure is 100 MPa. The time is 7.5 h.
Example 4
The embodiment provides a welding method of a high-purity copper target, which comprises the following steps:
(1) processing a copper target blank into a step shape, wherein the thickness of the step is consistent with the depth of a copper back plate groove, the roughness of the welding surface of the copper target blank is less than 0.4 mu m, and the welding surface of the copper back plate is subjected to thread turning treatment, wherein the thread pitch is 0.45mm, and the thread depth is 0.25 mm;
(2) carrying out ultrasonic cleaning and vacuum drying treatment on the processed copper target blank and the processed copper back plate;
the cleaning liquid for ultrasonic cleaning is IPA, the temperature is 75 ℃, and the time is 12 min;
the vacuum degree of the vacuum drying is less than 0.01Pa, and the time is 1.5 h;
(3) assembling the copper target blank and the copper back plate, and sequentially carrying out electron beam welding and hot isostatic pressing welding;
the speed of the electron beam welding is 14mm/s, the time is 105s, the electron beam current is 55mA, the depth of a welding pool is 7mm, and the times are 4;
the temperature of the hot isostatic pressing welding is 280 ℃, and the pressure is 125 MPa. The time is 6.5 h.
Example 5
The embodiment provides a welding method of a high-purity copper target, which comprises the following steps:
(1) processing a copper target blank into a step shape, wherein the thickness of the step is consistent with the depth of a copper back plate groove, the roughness of the welding surface of the copper target blank is less than 0.4 mu m, and the welding surface of the copper back plate is subjected to thread turning treatment, wherein the thread pitch is 0.35mm, and the thread depth is 0.2 mm;
(2) carrying out ultrasonic cleaning and vacuum drying treatment on the processed copper target blank and the processed copper back plate;
the cleaning solution for ultrasonic cleaning comprises IPA or alcohol, the temperature is 70 ℃, and the time is 12 min;
the vacuum degree of the vacuum drying is less than 0.01Pa, and the time is 1.5 h;
(3) assembling the copper target blank and the copper back plate, and sequentially carrying out electron beam welding and hot isostatic pressing welding;
the speed of the electron beam welding is 12mm/s, the time is 110s, the electron beam current is 45mA, the depth of a welding pool is 6.5mm, and the times are 3;
the temperature of the hot isostatic pressing welding is 250 ℃, and the pressure is 150 MPa. The time is 7 h.
Comparative example 1
The comparative example was conducted under the same conditions as in example 5 except that the copper back plate was not threaded.
Comparative example 2
The comparative example was carried out under the same conditions as example 5 except that the hot isostatic pressing (canning and degassing) was carried out and then the electron beam welding was carried out.
The copper target blanks used in examples 1 to 5 and comparative examples 1 and 2 were pure copper target blanks having a purity of 99.995%, and the backing plate was a copper-chromium alloy backing plate.
The welding effect of the backing plate aluminum targets provided by examples 1-5 and comparative examples 1-2 was verified by using the C-SCAN test, the test conditions are shown in Table 1, and the results are shown in Table 2.
TABLE 1
TABLE 2
| Overall binding rate/%) | Is singleDefect rate/%) | |
| Example 1 | 99.8 | 1.5 |
| Example 2 | 99.0 | 0.8 |
| Example 3 | 98.2 | 1.3 |
| Example 4 | 98.7 | 1.0 |
| Example 5 | 98.5 | 1.1 |
| Comparative example 1 | 0 | 100 |
| Comparative example 2 | 98.6 | 1.0 |
It can be seen from examples 1-5 that the welding method of the high-purity copper target material provided by the invention can achieve excellent welding effect, and compared with the conventional process of comparative example 2, namely, the target material is sheathed, degassed, then subjected to hot isostatic pressing welding and finally subjected to electron beam welding, the welding effect is equivalent. Comparative example 1 no weld was made due to the copper backing plate not being threaded.
The applicant declares that the present invention illustrates the detailed structural features of the present invention through the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must be implemented depending on the above detailed structural features. It should be understood by those skilled in the art that any modifications of the present invention, equivalent substitutions of selected components of the present invention, additions of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
The preferred embodiments of the present invention have been described in detail, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.
Claims (10)
1. The welding method of the high-purity copper target is characterized by comprising the following steps of:
(1) processing the copper target blank into a step shape, wherein the step thickness is consistent with the depth of a copper back plate groove, and performing thread turning treatment on the welding surface of the copper back plate;
(2) cleaning and drying the processed copper target blank and the processed copper back plate;
(3) and assembling the copper target blank and the copper back plate, and sequentially carrying out electron beam welding and hot isostatic pressing welding.
2. The welding method according to claim 1, wherein the roughness of the welding surface of the copper target blank of step (1) is < 0.4 μm.
3. The welding method according to claim 1 or 2, wherein the thread pitch of the welding surface of the copper backing plate after the thread turning in the step (1) is 0.2-0.5 mm, and the thread depth is 0.1-0.3 mm.
4. The welding method according to any one of claims 1 to 3, wherein the cleaning in step (2) is ultrasonic cleaning.
5. The welding method of claim 4, wherein the ultrasonically cleaned cleaning fluid comprises IPA or alcohol.
6. The welding method according to claim 4, wherein the time of the ultrasonic cleaning is 10 to 15 min;
preferably, the temperature of the ultrasonic cleaning is 60-80 ℃.
7. The welding method according to any one of claims 1 to 6, wherein the drying in step (2) is vacuum drying;
preferably, the vacuum degree of the vacuum drying is less than 0.01 Pa;
preferably, the time of vacuum drying is not less than 1 h.
8. The welding method according to any one of claims 1 to 7, wherein the speed of the electron beam welding in step (3) is 10 to 15 mm/s;
preferably, the time of the electron beam welding is 100-120 s;
preferably, the electron beam current of the electron beam welding is 30-60 mA;
preferably, the number of times of the electron beam welding is 3-5 times;
preferably, the depth of the welding pool for electron beam welding is 5-8 mm.
9. The welding method according to any one of claims 1 to 8, wherein the temperature of the hot isostatic pressing welding in step (3) is 200 to 300 ℃;
preferably, the pressure of the hot isostatic pressing welding is 100-150 MPa.
Preferably, the hot isostatic pressing welding time is 6-8 h.
10. Welding method according to any one of claims 1-9, characterized in that the method comprises the steps of:
(1) processing a copper target blank into a step shape, wherein the thickness of the step is consistent with the depth of a copper back plate groove, the roughness of the welding surface of the copper target blank is less than 0.4 mu m, and the welding surface of the copper back plate is subjected to thread turning treatment, wherein the thread pitch is 0.2-0.5 mm, and the thread depth is 0.1-0.3 mm;
(2) carrying out ultrasonic cleaning and vacuum drying treatment on the processed copper target blank and the processed copper back plate;
the cleaning liquid for ultrasonic cleaning comprises IPA or alcohol, the temperature is 60-80 ℃, and the time is 10-15 min;
the vacuum degree of the vacuum drying is less than 0.01Pa, and the time is not less than 1 h;
(3) assembling the copper target blank and the copper back plate, and sequentially carrying out electron beam welding and hot isostatic pressing welding;
the speed of electron beam welding is 10-15 mm/s, the time is 100-120s, the electron beam current is 30-60 mA, the depth of a welding molten pool is 5-8 mm, and the times are 3-5;
the hot isostatic pressing welding temperature is 200-300 ℃, the pressure is 100-150 MPa, and the time is 6-8 h.
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