CN107304470A - The manufacture method of target material assembly - Google Patents
The manufacture method of target material assembly Download PDFInfo
- Publication number
- CN107304470A CN107304470A CN201610268036.7A CN201610268036A CN107304470A CN 107304470 A CN107304470 A CN 107304470A CN 201610268036 A CN201610268036 A CN 201610268036A CN 107304470 A CN107304470 A CN 107304470A
- Authority
- CN
- China
- Prior art keywords
- backboard
- electron beam
- target
- blankss
- material assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Abstract
The present invention provides a kind of manufacture method of target material assembly, including：Target blankss and backboard are provided, the surface to be welded of target blankss is the first solder side, the surface to be welded of backboard is the second solder side, wherein, it is relative with the first solder side for the target blankss back side, between the first solder side and the target blankss back side for target blankss side, it is relative with the second solder side for the backboard back side, between the second solder side and the backboard back side for backboard side, and the volatile tenor in target blankss and backboard is unequal；First solder side and the second solder side are oppositely arranged and fitted；First electron beam scanning is carried out to the contact surface edge of target blankss and backboard using electron beam, target material assembly is formed；After first electron beam scanning, mobile electron beam or target material assembly make e-beam projection to volatile tenor relatively low target blankss side or backboard side.The present invention makes e-beam projection to volatile tenor relatively low target blankss side or backboard side, improves weld strength after the first electron beam scanning.
Description
Technical field
The present invention relates to the manufacture method of field of semiconductor manufacture, more particularly to target material assembly.
Background technology
Sputtering technology is one of conventional process of field of semiconductor manufacture, growing with sputtering technology,
Sputtering target material serves more and more important effect in sputtering technology, and the quality of sputtering target material is directly affected
The quality of forming film arrived after sputtering.
In sputtering target material manufacture field, sputtering target material is by meeting the target blankss of sputtering performance, leading to target blankss
Cross the backboard composition that welding is combined.In the prior art, the welding manner of target blankss and backboard mainly includes pricker
Weldering, thermal diffusion welding and electron beam welding.
Wherein, electron beam welding is to be placed in vacuum or non-real with the beam bombardment focused at a high speed using orientation
Aerial workpiece, the method for making kinetic energy be converted into heat energy and being welded workpiece fusing, due to electron beam
Higher energy density can make that weld seam is narrower, depth-to-width ratio is larger, welding stress and distortion is smaller, and
Semiconductor sputtering field is widely used.
But, the yield of the sputtering target material of electron beam welding formation is relatively low in the prior art.
The content of the invention
The problem of present invention is solved is to provide a kind of manufacture method of target material assembly, improves the good of sputtering target material
Rate.
To solve the above problems, the present invention provides a kind of manufacture method of target material assembly.Including：Target is provided
Base and backboard, the surface to be welded of the target blankss is the first solder side, and the surface to be welded of the backboard is second
Solder side, wherein, the surface relative with first solder side is the target blankss back side, positioned at the described first weldering
Surface between junction and the target blankss back side is target blankss side, and the surface relative with second solder side is the back of the body
Back, surface between second solder side and the backboard back side is backboard side, and the target
Volatile tenor in base and backboard is unequal；First solder side and the second solder side is relative
Set and fit, form initial target material assembly；The initial target material assembly is rotated, and uses electron beam pair
The contact surface edge of the target blankss and backboard carries out the first electron beam scanning, the target blankss is soldered to described
Target material assembly is formed on backboard；Complete after first electron beam scanning, mobile electron beam or target material assembly,
Make e-beam projection to volatile tenor relatively low target blankss side or backboard side；Close Electron Beam
Stream.
Optionally, the volatile metal that the volatile tenor in the target blankss is less than in the backboard contains
Amount；In the step of mobile electron beam, on the direction perpendicular to the target blankss and the contact surface of backboard, from
Along target blankss side mobile electron beam at the contact surface of the target blankss and backboard.
Optionally, in the step of mobile electron beam, electron beam is made to move pre-determined distance from contact surface, it is described
Pre-determined distance is 3 millimeters to 8 millimeters.
Optionally, the volatile metal that the volatile tenor in the backboard is less than in the target blankss contains
Amount；In the step of mobile electron beam, on the direction perpendicular to the target blankss and the contact surface of backboard, from
Along backboard side mobile electron beam at the contact surface of the target blankss and backboard.
Optionally, mobile electron beam or the step of target material assembly in, the shifting of the target material assembly or electron beam
Dynamic speed is 2 millimeters per second to 3 millimeters per second.
Optionally, the material of the backboard is aluminum or aluminum alloy；The material of the target blankss is aluminum or aluminum alloy；
The volatile metal is magnesium or sodium.
Optionally, the initial target material assembly is rotated, it is described in the step of carrying out the first electron beam scanning
It is a circle to five circles that initial target material assembly, which rotates the number of turns,.
Optionally, in the first electron beam scanning step, the penetration depth of the electron beam scanning is 10 millimeters
To 30 millimeters.
Optionally, mobile electron beam or include the step of target material assembly：To target blankss side or backboard side
Face carries out the second electron beam scanning.
Optionally, the processing parameter setting of first electron beam scanning and the second electron beam scanning is identical.
Compared with prior art, technical scheme has advantages below：
The present invention carries out the first electron beam to the contact surface edge of the target blankss and backboard using electron beam and swept
Retouch, in electron beam welding, orientation high speed and contact of the target blankss with backboard described in the beam bombardment focused on
Face edge, makes kinetic energy be converted into heat energy and makes the target blankss and backboard of contact surface edge partial depth occur to melt
Change, form molten bath；Complete after first electron beam scanning, mobile electron beam or target material assembly make electricity
Beamlet is projected to the relatively low target blankss side or backboard side of volatile tenor, finally turns off electron beam
Line.Because the contact surface edge is not finished up for electron beam, (i.e. electron beam line is closed for position
Position), it can avoid because of gas hole defect formed by the volatilization of molten bath bottom metal；Received in electron beam welding
Gradually moved during tail to the surface of target blankss or backboard, so as to reduce in the contact surface edge
The problem of forming ending defect, and then improve the weld strength of the contact surface edge；And it is volatile
When tenor is lower, the depth for the defect that finishes up is more shallow, by containing e-beam projection to volatile metal
Amount relatively low target blankss side or backboard side, can also avoid quality and the performance to the target blankss or backboard
Have undesirable effect, and then improve the yield of sputtering target material.
Brief description of the drawings
Fig. 1 and Fig. 2 are the principle schematics of the embodiment of electron beam welding one；
Fig. 3 is the schematic flow sheet of the embodiment of manufacture method one of target material assembly of the present invention；
Fig. 4 to Fig. 8 be target material assembly of the present invention the embodiment of manufacture method one in the signal of each step counter structure
Figure；
Fig. 9 and Figure 10 are the principle schematics of electron beam welding of the present invention.
Embodiment
From background technology, the yield of the sputtering target material of electron beam welding formation is relatively low in the prior art.
With reference to Fig. 1 and Fig. 2 is referred to, the principle schematic of the embodiment of electron beam welding one is shown, its reason is analyzed
It is：
By the first aluminium alloy 100 (as shown in Figure 1) containing more volatile metal 120 and without volatile
When second aluminium alloy (not shown) of metal carries out electron beam welding, the electron beam of orientation at a high speed with focusing
The aluminium alloy of the first aluminium alloy 100 and second is bombarded, kinetic energy is converted into heat energy and makes weld part deep
The aluminium alloy of first aluminium alloy 100 and second of degree melts, and in first aluminium alloy 100
Form molten bath 110；With the rise of temperature, the volatile metal 120 in first aluminium alloy 100 is easy
Volatilize, and temperature is higher, evaporation rate is faster, thus cause the bottom of molten bath 110 of weld by
Gas hole defect 130 (as shown in Figure 2) is formed in lacking metallic solution.
In electron beam welding epilog (during i.e. electron beam line is closed), with electron beam
Line constantly reduces, and the depth of molten bath 110 is also gradually reduced, and is formed due to the volatilization of volatile metal 120
Gas hole defect 130 is also gradually moved to the surface of first aluminium alloy 100, so as to be closed in first aluminium
Successional ending defect (not shown) is formed to the surface of first aluminium alloy 100 in gold 100, its
In, the ending defect is successional multiple gas hole defects 130.
Wherein, the weld strength in the region with ending defect can be greatly reduced, i.e., described first aluminium alloy
100 and second aluminium alloy solder bond effect it is poor so that the yield of the sputtering target material resulted in compared with
It is low.And the content of volatile metal 120 is bigger, the ending defect formed in electron beam welding epilog
More serious, so that weld strength is also lower at ending, the yield of the sputtering target material of formation is also lower.
In order to solve the above problems, the present invention provides a kind of manufacture method of target material assembly, including：There is provided
Target blankss and backboard, the surfaces to be welded of the target blankss is the first solder side, and the surface to be welded of the backboard is the
Two solders side, wherein, the surface relative with first solder side is the target blankss back side, positioned at described first
Surface between solder side and the target blankss back side is target blankss side, and the surface relative with second solder side is
The backboard back side, surface between second solder side and the backboard back side is backboard side, and described
Volatile tenor in target blankss and backboard is unequal；By first solder side and the second solder side phase
To setting and fitting, initial target material assembly is formed；The initial target material assembly is rotated, and uses electron beam
First electron beam scanning is carried out to the contact surface edge of the target blankss and backboard, the target blankss are soldered to institute
State and target material assembly is formed on backboard；Complete after first electron beam scanning, mobile electron beam or target group
Part, makes e-beam projection to volatile tenor relatively low target blankss side or backboard side；Close electronics
Beam line.
The present invention carries out the first electron beam to the contact surface edge of the target blankss and backboard using electron beam and swept
Retouch, in electron beam welding, orientation high speed and contact of the target blankss with backboard described in the beam bombardment focused on
Face edge, makes kinetic energy be converted into heat energy and makes the target blankss and backboard of contact surface edge partial depth occur to melt
Change, form molten bath；Complete after first electron beam scanning, mobile electron beam or target material assembly make electricity
Beamlet is projected to the relatively low target blankss side or backboard side of volatile tenor, finally turns off electron beam
Line.Because the contact surface edge is not finished up for electron beam, (i.e. electron beam line is closed for position
Position), it can avoid because of gas hole defect formed by the volatilization of molten bath bottom metal；Received in electron beam welding
Gradually moved during tail to the surface of target blankss or backboard, so as to reduce in the contact surface edge
The problem of forming ending defect, and then improve the weld strength of the contact surface edge；And it is volatile
When tenor is lower, the depth for the defect that finishes up is more shallow, by containing e-beam projection to volatile metal
Amount relatively low target blankss side or backboard side, can also avoid quality and the performance to the target blankss or backboard
Have undesirable effect, and then improve the yield of sputtering target material.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings
The specific embodiment of the present invention is described in detail.
Fig. 3 is refer to, the schematic flow sheet of the embodiment of manufacture method one of target material assembly of the present invention is shown,
The manufacture method of the present embodiment target material assembly includes following basic step：
Step S1：Target blankss and backboard are provided, the surface to be welded of the target blankss is the first solder side, the back of the body
The surface to be welded of plate is the second solder side, wherein, the surface relative with first solder side is carried on the back for target blankss
Face, the surface between first solder side and the target blankss back side is target blankss side, with the described second weldering
The relative surface of junction is the backboard back side, and the surface between second solder side and the backboard back side is
Backboard side, and the volatile tenor in the target blankss and backboard is unequal；
Step S2：First solder side and the second solder side are oppositely arranged and fitted, primary target is formed
Material component；
Step S3：The initial target material assembly is rotated, and the target blankss and backboard are connect using electron beam
Contacting surface edge carries out the first electron beam scanning, and the target blankss are soldered on the backboard and form target material assembly；
Step S4：Complete after first electron beam scanning, mobile electron beam or target material assembly make electronics
Beam is projected to the relatively low target blankss side or backboard side of volatile tenor；
Step S5：Close electron beam line.
For the manufacture method of target material assembly that the embodiment of the present invention is better described, below in conjunction with reference
Fig. 4 to Fig. 8, shows that each step counter structure shows in the embodiment of manufacture method one of target material assembly of the present invention
It is intended to, the specific embodiment of the present invention is further described.
With reference to Fig. 4 and Fig. 5 is referred to, step S1 is first carried out, and there is provided target blankss 300 (as shown in Figure 4) and the back of the body
Plate 200 (as shown in Figure 5), the surface to be welded of the target blankss 300 is the first solder side 301 (as shown in Figure 4),
The surface to be welded of the backboard 200 is the second solder side 201 (as shown in Figure 5), wherein, with described first
The relative surface of solder side 301 is the target blankss back side 302 (as shown in Figure 4), positioned at first solder side 301
Surface between the target blankss back side 302 is 303 (as shown in Figure 4) of target blankss side, with second solder side
201 relative surfaces are the backboard back side 202, between second solder side 201 and the backboard back side 202
Surface for backboard side 203, and the target blankss and backboard 200 in volatile tenor it is unequal.
Specifically, the size of the backboard 200 is more than the size of the target blankss 300, the table of the backboard 200
Face includes the back plate surface of first area I (as shown in Figure 5) and the back plate surface of second area II (such as Fig. 5 institutes
Show), the shape of the back plate surface of second area II, the first solder side 301 of size and the target blankss 300
Shape, size it is identical, the back plate surface of second area II be the second solder side 201, firstth area
The back plate surface of domain I is the fringe region of backboard 200.
The shape of the target blankss 300 can be required according to application environment and sputtering rounded, rectangle, annular,
Cone or other any regular shapes or irregular shape.In the present embodiment, the shape of the target blankss 300
Shape is circle, and the shape of the backboard 200 is also circle.
In the present embodiment, in order to improve the electric conductivity and thermal conductivity of sputtering target material, the material of the target blankss 300
For aluminum or aluminum alloy.
The backboard 200 is played a supporting role in the target material assembly being subsequently formed, and with conduction heat
Function.In the present embodiment, the material of the backboard 200 is aluminum or aluminum alloy.
The volatile metal is used for the intensity and hardness for improving material.It is described volatile in the present embodiment
Metal is magnesium or sodium.
In the present embodiment, the volatile tenor in the target blankss 300 is less than easy in the backboard 200
Volatilized metal content.Wherein, the situation that the volatile tenor including in the target blankss 300 is zero.
In other embodiments, the volatile tenor in the backboard is less than easily waving in the target blankss
Send out tenor.Wherein, the situation that the volatile tenor including in the backboard is zero.
In a specific embodiment, the material of the backboard 200 is aluminium alloy, the material of the target blankss 300
Expect that for aluminium alloy there is the volatile metal in volatile metal, the target blankss 300 in the backboard 200
Content is zero, and the volatile metal is magnesium.
With reference to Fig. 6, step S2 is then performed, by first solder side 301 (as shown in Figure 4) and second
Solder side 201 (as shown in Figure 5) is oppositely arranged and fitted, and forms initial target material assembly (not indicating).
In the present embodiment, the back plate surface of second area II (as shown in Figure 5) is the second solder side 201；
Accordingly, in the step of solder side 201 of the first solder side 301 and second being oppositely arranged and fitted,
First solder side 301 is oppositely arranged and fitted with the back plate surface of second area II, and exposes institute
State the back plate surface of first area I (as shown in Figure 5).
It should be noted that being formed after initial target material assembly, the solder side of the first solder side 301 and second
201 be the contact surface (not indicating) of the target blankss 300 and backboard 200；Wherein, the first area I is carried on the back
The contact surface region of plate surface and the back plate surface intersection of second area II is contact surface edge, is subsequently being entered
In row electro-beam welding process, the target blankss 300 and the material of backboard 200 of contact surface edge partial depth
Melt, form molten bath and phase counterdiffusion, molten bath forms weld seam after cooling, so as to realize the target
The solder bond of base 300 and backboard 200.
With reference to Fig. 7, step S3 is then performed, the initial target material assembly is rotated, and use electron beam 420
The is carried out to the contact surface edge of the target blankss 300 (as shown in Figure 4) and backboard 200 (as shown in Figure 5)
One electron beam scanning, the target blankss 300 are soldered on the backboard 200 and form target material assembly (not indicating).
Specifically, the step of first electron beam scanning includes：Electron beam furnace 400, the electronics are provided
Rotating mechanism 430, electron gun rifle room (not shown) and electron gun 410 are provided with beam stove 400；Will be described
Initial target material assembly is attached on the rotating mechanism 430；Make the electron beam furnace 400 and electron gun rifle room
Reach after predetermined vacuum angle value, start the electron gun 410；The electron beam sent to the electron gun 410
420 carry out drawing beam technique, the power of electron gun 410 is adjusted to preset value；Throw the electron beam 420
The contact surface edge of the target blankss 300 and backboard 200 is incident upon, while rotating institute by the rotating mechanism 430
Initial target material assembly is stated, makes 420 pairs of rotating contact faces of electron beam edge be scanned to realize weldering
Connect.
The rotating mechanism 430 is used to support the initial target material assembly, and in electro-beam welding process mistake
Rotate the initial target material assembly in journey, so as to carry out Welder to rotating contact face edge
Skill；The electron gun 410 is located in the electron gun rifle room, and the electron gun 410 is used in electron beam
In welding procedure, launch high-energy electron, after the impact to the initial target material assembly, institute
The kinetic energy for stating high-energy electron is converted into the heat on contact surface edge target blankss 300 and the surface of backboard 200
Can, so as to realize the heating and fusing to contact surface edge target blankss 300 and the surface of backboard 200.
The electron beam furnace 400 is the special equipment of high temperature refractory welding, need to be carried out under a high vacuum.
In the present embodiment, the electron beam furnace also includes fire door (not shown) and vacuum pump set (not shown).
Specifically, the step of starting electron gun 410 includes：The initial target material assembly is attached to
After on the rotating mechanism 430, the fire door of the electron beam furnace is closed, starts vacuum pump set, makes electronics
Beam stove 400 and electron gun rifle room are reached after predetermined vacuum angle value, start the electron gun 410.
It should be noted that in order to prevent the target blankss 300 during Subsequent electronic beam welding procedure
Aoxidized with backboard 200, the electron beam furnace 400 need to control preferable vacuum state.The present embodiment
In, the predetermined vacuum angle value of the electron beam furnace 400 is less than 1E-3Pa.
In addition, in order that the electron gun 410 excites high-energy electron, and the electron gun rifle room is true
When reciprocal of duty cycle is poor, the electron beam path that the electron gun 410 is sent easily is caused to shift, therefore institute
Preferable vacuum state need to be controlled by stating electron gun rifle room.In the present embodiment, the electron gun rifle room it is default
Vacuum degree is less than 1E-4Pa.
In the present embodiment, the electron beam 420 is in contact surface edge target blankss 300 and backboard 200
The heat energy that surface is produced has penetration depth D to the target blankss 300 and backboard 200, that is to say, that institute
The material for stating the target blankss 300 in penetration depth D and backboard 200 melts.
It should be noted that the penetration depth D is unsuitable too deep, also should not be excessively shallow.If the infiltration
Depth D is excessively shallow, is easily caused the fusing effect of contact surface edge target blankss 300 and backboard 200 not
It is good, so as to cause the target blankss 300 and the solder bond effect of backboard 200 to reduce；If the infiltration
When depth D is too deep, it is easily caused excessive target blankss 300 and the material of backboard 200 melts, or even lead
Cause the Quality Down of the target blankss 300 and backboard 200.Therefore, in the present embodiment, first electronics
The penetration depth D of beam scanning is 10 millimeters to 30 millimeters.
It should be noted that on the one hand, it is fully and uniform in order to during electro-beam welding process
Ground melts the material of contact surface edge target blankss 300 and backboard 200, to improve the target blankss 300
With the solder bond effect of backboard 200, another aspect, in order to avoid heat energy is in the contact surface edge
The penetration depth D (as shown in Figure 7) of target blankss 300 and backboard 200 is too deep and causes target blankss 300 and the back of the body
The problem of Quality Down of plate 200, the power preset value of electron gun 410 of the electro-beam welding process and
The linear velocity V (as shown in Figure 7) of initial target material assembly also needs control in the reasonable scope.This reality
Apply in example, the power preset value of electron gun 410 be 70KW to 160KW, the initial target material assembly
Linear velocity V for 5 millimeters per second to 25 millimeters it is per second.
In the present embodiment, the electron gun rifle room is fixing device, need to be revolved by the rotating mechanism 430
Turn the initial target material assembly, to realize to rotating contact face edge target blankss 300 and backboard 200
Solder bond.
It should be noted that in order to be filled to contact surface edge target blankss 300 and the material of backboard 200
Divide fusing, during first electron beam scanning, the initial target material assembly at least rotates a circle,
Otherwise the target blankss 300 and backboard 200 in unfused region are difficult to solder bond, so as to cause welding strong
The reduction of degree, and then the yield decline of the sputtering target material resulted in；But the initial target material assembly is rotated
The number of turns should not be excessive, otherwise contact surface edge target blankss 300 and backboard 200 by electron beam 420 (such as
Shown in Fig. 7) excessively multiple multiple scanning, easily cause excessive target blankss 300 and the material of backboard 200 occurs
Fusing, even results in the Quality Down of the target blankss 300 and backboard 200.Therefore, in the present embodiment,
During first electron beam scanning, it is a circle to five circles that the initial target material assembly, which rotates the number of turns,.
With reference to Fig. 8, step S4 is then performed, is completed after first electron beam scanning, mobile electron beam
420 or target material assembly, electron beam 420 is projected to the relatively low target blankss side 303 of volatile tenor (such as
Shown in Fig. 4) or 203 (as shown in Figure 5) of backboard side.
Referred to it should be noted that volatile tenor is relatively low：The target blankss 300 and backboard 200
Both compare.
In the present embodiment, the volatile tenor in the target blankss 300 is less than in the backboard 200
Volatile tenor；By taking the mobile mobile electron beam 420 as an example, the mobile mobile electron beam 420
The step of include：On the direction perpendicular to the target blankss 300 and the contact surface of backboard 200, from described
At the contact surface of target blankss 300 and backboard 200 electron beam 420 is moved along target blankss side 303.
In the present embodiment, in the step of moving electron beam 420, make the electron beam 420 from target blankss
The 300 and contact surface movement pre-determined distance L (as shown in Figure 8) of backboard 200.
It should be noted that the pre-determined distance L is unsuitable long, it is also unsuitable too short.If described default
It is too short apart from L, that is, complete the time that first electron beam scanning is closed to the line of electron beam 420
Interval is too short, due to having volatile metal 220 (shown in such as Fig. 9 (a)) in the backboard 200, holds
(during i.e. the line of electron beam 420 is closed) is easily caused in electron beam welding epilog, described
The formation successional first (as shown in Figure 5) of the second solder side 201 in backboard 200 to backboard 200 is received
Tail defect 231 (shown in such as Fig. 9 (c)), and the pre-determined distance L is shorter, the first ending defect
231 is more serious；If the pre-determined distance L is long, i.e., the target blankss 300 scanned by the electron beam 420
Side 303 (as shown in Figure 4) region it is excessive, easily to being subsequently applied to effective target blankss of sputtering technology
300 materials have undesirable effect, so that the performance to sputtering target material produces harmful effect.Therefore, this implementation
In example, the pre-determined distance L length is 3 millimeters to 8 millimeters.
It should also be noted that, the process of the mobile electron beam 420 (as shown in Figure 8) or target material assembly
In, the translational speed V of the target material assembly or electron beam 420tIt is unsuitable too fast, also should not be excessively slow.If
The translational speed VtCross slow, be easily caused described 303 (such as Fig. 4 of target blankss side of 420 pairs of the electron beam
It is shown) penetration depth it is too deep so that the material for being easily caused excessive target blankss side 303 melts,
The problem of even causing 300 Quality Down of target blankss；On the contrary, the translational speed VtAlso it is unsuitable too fast.
Therefore, in the present embodiment, the translational speed of the target material assembly or electron beam 420 is per second to 3 for 2 millimeters
Millimeter is per second.
It should be noted that in order to avoid making electron beam 420 be projected to the relatively low target of volatile tenor
During base side 303 or backboard side 203, the quality to the target blankss 300 and backboard 200 is made
Include into harmful effect, the step of mobile electron beam 420 or target material assembly：To target blankss side 303
Or backboard side 203 carries out the second electron beam scanning.Wherein, first electron beam scanning and the second electricity
The processing parameter setting of beamlet scanning is identical,
Specifically, the predetermined vacuum angle value of the electron beam furnace 400 is less than 1E-3Pa；The electron gun rifle
The predetermined vacuum angle value of room is less than 1E-4Pa；The penetration depth of second electron beam scanning be 10 millimeters extremely
30 millimeters；The power preset value of electron gun 410 is 70KW to 160KW；The rotation of the target material assembly
Turn linear velocity V per second for 5 millimeters per second to 25 millimeters.
In another embodiment, the volatile tenor in the backboard is less than easily waving in the target blankss
Send out tenor；Exemplified by moving the mobile electron beam, the step of moving the mobile electron beam includes：
On the direction perpendicular to the target blankss and the contact surface of backboard, at the contact surface of the target blankss and backboard
The electron beam is moved along target blankss side.
In other embodiments, e-beam projection can also be made to easily waving by the mobile target material assembly
Send out tenor relatively low target blankss side or backboard side.
Volatile metal in the target blankss 300 is more than with the volatile tenor in the backboard 200
Exemplified by, with reference to Fig. 9 and Figure 10 is referred to, show the principle schematic of electron beam welding of the present invention.
During first electro-beam welding process, orientation is at a high speed with the electron beam 420 focused on (as schemed
Shown in 7) target blankss 300 of the bombardment contact surface edge and backboard 200, make kinetic energy be converted into heat energy and
Melt the target blankss 300 and the material of backboard 200 of contact surface edge partial depth, described
The first molten bath 210 (as shown in Figure 9) is formed in backboard 200, second is formed in the target blankss 300 and is melted
Pond 310 (as shown in Figure 10), wherein, the first molten bath 210 of the contact surface edge and the second molten bath
310 mutually fusions.
As shown in figure 9, due to volatile metal 220 in the backboard 200 (shown in such as Fig. 9 (a))
Content it is higher, with the rise of temperature, the volatile metal 220 in the backboard 200 easily occurs
Volatilization, and temperature is higher, evaporation rate is faster, so as to cause to melt the first of the contact surface edge
The bottom of pond 210 forms the first gas hole defect 230 due to lacking metallic solution (shown in such as Fig. 9 (b)).
As long as it should be noted that the technological parameter of electron beam scanning is constant, and the line of electron beam 420 is not
Close, the depth in first molten bath 210 does not change, and the target material assembly is described in rotating welding
The position for the first gas hole defect 230 that the bottom of first molten bath 210 is formed also keeps constant；But if stopping
Electron beam scanning, (the i.e. electron beam welding epilog during the line of electron beam 420 is closed
In), as the line of electron beam 420 constantly reduces, the depth of the first molten bath 210 is also gradually reduced, the back of the body
The first gas hole defect 230 that the volatilization of volatile metal 220 in plate 200 is formed is also gradually to the back of the body
Second solder side 201 of plate 200 is (as shown in Figure 5) mobile, so as to backboard in the backboard 200
200 the second solder side 201 forms successional first ending defect 231 (shown in such as Fig. 9 (c)),
Wherein, the first ending defect 231 is successional multiple first gas hole defects 230.
In the present embodiment, after the first electron beam scanning technique, the mobile electron beam 420 or target
Material component, makes the electron beam 420 be projected to 303 (as shown in Figure 4) of target blankss side, therefore, continues
Electron beam scanning make (such as Fig. 9 (b) of the first gas hole defect 230 in contact surface edge backboard 200
It is shown) it is always positioned in the constant depth of the backboard 200；That is, lasting electron beam scanning
First gas hole defect 230 can be made to be located remotely from the position in the face of the second solder side 201, and
Slow down first gas hole defect 230 gradually to the movement on the surface of backboard 200, so as to improve described
The first ending defect 231 (shown in such as Fig. 9 (c)) in backboard 200, and then the target blankss can be improved
300 and the weld strength of backboard 200, improve the performance of the sputtering target material formed.
As shown in Figure 10, in the present embodiment, the volatile tenor in the target blankss 300 is less than described
Volatile tenor in backboard 200, that is to say, that in the scanning (as shown in Figure 8) of electron beam 420
During, with the rise of temperature, the metal 320 in the target blankss 300 (shown in such as Figure 10 (a))
Volatile quantity it is less, therefore the formed in second molten bath 310 (such as Figure 10 (a) shown in) bottom
Two gas hole defects 330 (shown in such as Figure 10 (b)) are less；During the line of electron beam 420 is closed
(i.e. in electron beam welding epilog), in the target blankss 300 to the surface of target blankss 300 formed the
Two ending defects 331 (shown in such as Fig. 9 (c)) are less, and received compared to first in the backboard 200
Tail defect 231 (such as Fig. 9 (c) shown in), the second ending defect 331 is further from the target blankss 300
Surface.Therefore, while the weld strength of the target blankss 300 and backboard 200 is improved, it can also keep away
Exempt to produce harmful effect to the quality and performance of the target blankss 300.
It should be noted that after the first electron beam scanning technique, by mobile electron beam 420 or
Target material assembly, can also make second gas hole defect 330 away from contact surface edge target blankss 300
The first solder side 301, and slow down second gas hole defect 330 gradually to the first of the target blankss 300
Solder side 301 is moved.
Step S5 is finally performed, the line of electron beam 420 is closed.
It should be noted that the manufacture method of the target material assembly also includes：Close the line of electron beam 420
Afterwards, the electron beam furnace 400 (as shown in Figure 8) is closed；The target material assembly is taken out after being cooled down.
Although of the invention, oneself discloses as above, and the present invention is not limited to this.Any those skilled in the art,
Without departing from the spirit and scope of the present invention, it can make various changes or modifications, therefore the guarantor of the present invention
Shield scope should be defined by claim limited range.
Claims (10)
1. a kind of manufacture method of target material assembly, it is characterised in that including：
There is provided target blankss and backboard, the surfaces to be welded of the target blankss is the first solder side, the backboard it is to be welded
Junction is the second solder side, wherein, the surface relative with first solder side is the target blankss back side, is located at
Surface between first solder side and the target blankss back side is target blankss side, relative with second solder side
Surface be the backboard back side, surface between second solder side and the backboard back side is backboard side,
And the volatile tenor in the target blankss and backboard is unequal；
First solder side and the second solder side are oppositely arranged and fitted, initial target material assembly is formed；
The initial target material assembly is rotated, and using electron beam to the target blankss and the contact surface edge of backboard
The first electron beam scanning is carried out, the target blankss are soldered on the backboard and form target material assembly；
Complete after first electron beam scanning, mobile electron beam or target material assembly make e-beam projection extremely
Volatile tenor relatively low target blankss side or backboard side；
Close electron beam line.
2. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that easy in the target blankss
Volatilized metal content is less than the volatile tenor in the backboard；
In the step of mobile electron beam, on the direction perpendicular to the target blankss and the contact surface of backboard, from
Along target blankss side mobile electron beam at the contact surface of the target blankss and backboard.
3. the manufacture method of target material assembly as claimed in claim 2, it is characterised in that the step of mobile electron beam
In rapid, electron beam is set to move pre-determined distance from contact surface, the pre-determined distance is 3 millimeters to 8 millimeters.
4. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that easy in the backboard
Volatilized metal content is less than the volatile tenor in the target blankss；
In the step of mobile electron beam, on the direction perpendicular to the target blankss and the contact surface of backboard, from
Along backboard side mobile electron beam at the contact surface of the target blankss and backboard.
5. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that mobile electron beam or target
In the step of material component, the translational speed of the target material assembly or electron beam is per second to 3 millimeters for 2 millimeters
It is per second.
6. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that the material of the backboard
For aluminum or aluminum alloy；The material of the target blankss is aluminum or aluminum alloy；The volatile metal is magnesium or sodium.
7. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that rotate the primary target
In material component, the step of carrying out the first electron beam scanning, it is a circle that the initial target material assembly, which rotates the number of turns,
To five circles.
8. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that the first electron beam scanning
In step, the penetration depth of the electron beam scanning is 10 millimeters to 30 millimeters.
9. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that mobile electron beam or target
The step of material component, includes：Second electron beam scanning is carried out to target blankss side or backboard side.
10. the manufacture method of target material assembly as claimed in claim 9, it is characterised in that first electron beam
Scanning is identical with the processing parameter setting of the second electron beam scanning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610268036.7A CN107304470A (en) | 2016-04-25 | 2016-04-25 | The manufacture method of target material assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610268036.7A CN107304470A (en) | 2016-04-25 | 2016-04-25 | The manufacture method of target material assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107304470A true CN107304470A (en) | 2017-10-31 |
Family
ID=60150711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610268036.7A Pending CN107304470A (en) | 2016-04-25 | 2016-04-25 | The manufacture method of target material assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107304470A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109807452A (en) * | 2019-03-18 | 2019-05-28 | 东莞市欧莱溅射靶材有限公司 | A kind of end welding method of rafifinal rotary target |
| CN113458576A (en) * | 2021-07-12 | 2021-10-01 | 宁波江丰电子材料股份有限公司 | Electron beam welding method of target assembly and target assembly |
| CN114734133A (en) * | 2022-04-25 | 2022-07-12 | 先导薄膜材料有限公司 | Welding method and welding tool for high-purity aluminum and aluminum alloy back plate |
| CN114799453A (en) * | 2022-03-31 | 2022-07-29 | 宁波江丰电子材料股份有限公司 | Welding method of high-purity copper target |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007245211A (en) * | 2006-03-17 | 2007-09-27 | Mitsubishi Materials Corp | Manufacturing method of target having backing plate |
| CN101559515A (en) * | 2009-05-13 | 2009-10-21 | 宁波江丰电子材料有限公司 | Vacuum electron beam welding method |
| CN202922105U (en) * | 2012-11-12 | 2013-05-08 | 北京有色金属研究总院 | Connecting structure of target and back plate |
| CN105458486A (en) * | 2014-09-05 | 2016-04-06 | 宁波江丰电子材料股份有限公司 | Welding method and welding device |
-
2016
- 2016-04-25 CN CN201610268036.7A patent/CN107304470A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007245211A (en) * | 2006-03-17 | 2007-09-27 | Mitsubishi Materials Corp | Manufacturing method of target having backing plate |
| CN101559515A (en) * | 2009-05-13 | 2009-10-21 | 宁波江丰电子材料有限公司 | Vacuum electron beam welding method |
| CN202922105U (en) * | 2012-11-12 | 2013-05-08 | 北京有色金属研究总院 | Connecting structure of target and back plate |
| CN105458486A (en) * | 2014-09-05 | 2016-04-06 | 宁波江丰电子材料股份有限公司 | Welding method and welding device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109807452A (en) * | 2019-03-18 | 2019-05-28 | 东莞市欧莱溅射靶材有限公司 | A kind of end welding method of rafifinal rotary target |
| CN113458576A (en) * | 2021-07-12 | 2021-10-01 | 宁波江丰电子材料股份有限公司 | Electron beam welding method of target assembly and target assembly |
| CN114799453A (en) * | 2022-03-31 | 2022-07-29 | 宁波江丰电子材料股份有限公司 | Welding method of high-purity copper target |
| CN114734133A (en) * | 2022-04-25 | 2022-07-12 | 先导薄膜材料有限公司 | Welding method and welding tool for high-purity aluminum and aluminum alloy back plate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107304470A (en) | The manufacture method of target material assembly | |
| US3969604A (en) | Method of welding galvanized steel | |
| Gao et al. | Parameter optimization and mechanism of laser–arc hybrid welding of dissimilar Al alloy and stainless steel | |
| CN101559515B (en) | Vacuum electron beam welding method | |
| US3881084A (en) | Method of welding galvanized steel | |
| JPS6037176B2 (en) | Surface alloying and heat treatment methods | |
| JP2004520942A (en) | Surface modification method | |
| CN108326425B (en) | Focal plane rotation laser spot welding method | |
| CN105414804B (en) | Laser welding enhances the application of coating and waveform in copper, aluminium welding | |
| US3808395A (en) | Method of metallurgically joining a beryllium-base part and a copper-base part | |
| US6932879B2 (en) | Method of weldbonding | |
| US3794807A (en) | Method of beam welding dissimilar metal parts | |
| Lin et al. | Developing processing windows for powder pre-heating in electron beam melting | |
| CN107914075A (en) | Target material welding method | |
| JP2005279744A (en) | Butt welding method of different kind of material using high energy beam | |
| US3691341A (en) | Improvements to the controlling of focussing of electronic bombardment | |
| Li et al. | Evolution of surface topography of 304L stainless steel irradiated by long pulse laser | |
| CN110560868A (en) | vacuum electron beam welding process for 6-series aluminum alloy sheet | |
| CN103785961B (en) | The manufacture method of backboard and backboard | |
| JPS61232079A (en) | Laser welding method | |
| CN110788503A (en) | Method for forming advanced dissimilar metal composite structure of 45# steel/tin-lead alloy | |
| CN106064278A (en) | A kind of galvanized steel plain sheet laser lap welding method based on parital vacuum atmosphere | |
| JPS5870985A (en) | Joining method for different metals | |
| JPS5852755B2 (en) | Laser training | |
| EP4015110A1 (en) | Method to produce a sinter structure and sinter structure produced with such a method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171031 |