TWI824350B - 半導體製造裝置用構件以及塞 - Google Patents

半導體製造裝置用構件以及塞 Download PDF

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Publication number
TWI824350B
TWI824350B TW110145429A TW110145429A TWI824350B TW I824350 B TWI824350 B TW I824350B TW 110145429 A TW110145429 A TW 110145429A TW 110145429 A TW110145429 A TW 110145429A TW I824350 B TWI824350 B TW I824350B
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TW
Taiwan
Prior art keywords
plug
flow path
gas flow
gas
semiconductor manufacturing
Prior art date
Application number
TW110145429A
Other languages
English (en)
Chinese (zh)
Other versions
TW202232628A (zh
Inventor
石川征樹
青木泰穂
Original Assignee
日商日本碍子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 日商日本碍子股份有限公司 filed Critical 日商日本碍子股份有限公司
Publication of TW202232628A publication Critical patent/TW202232628A/zh
Application granted granted Critical
Publication of TWI824350B publication Critical patent/TWI824350B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Glass Compositions (AREA)
TW110145429A 2021-02-04 2021-12-06 半導體製造裝置用構件以及塞 TWI824350B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-016385 2021-02-04
JP2021016385A JP7382978B2 (ja) 2021-02-04 2021-02-04 半導体製造装置用部材及びプラグ

Publications (2)

Publication Number Publication Date
TW202232628A TW202232628A (zh) 2022-08-16
TWI824350B true TWI824350B (zh) 2023-12-01

Family

ID=82611592

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110145429A TWI824350B (zh) 2021-02-04 2021-12-06 半導體製造裝置用構件以及塞

Country Status (5)

Country Link
US (1) US12040160B2 (enExample)
JP (2) JP7382978B2 (enExample)
KR (1) KR102728858B1 (enExample)
CN (1) CN114864435A (enExample)
TW (1) TWI824350B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7616762B2 (ja) * 2020-12-14 2025-01-17 東京エレクトロン株式会社 プラズマ処理装置
JP7744328B2 (ja) * 2022-12-21 2025-09-25 日本碍子株式会社 半導体製造装置用部材、プラグ及びプラグ製造方法
JP7764356B2 (ja) * 2022-12-21 2025-11-05 日本碍子株式会社 プラグ、プラグ製造方法及び半導体製造装置用部材
WO2025177564A1 (ja) * 2024-02-22 2025-08-28 日本碍子株式会社 半導体製造装置用部材
WO2026063179A1 (ja) * 2024-09-18 2026-03-26 京セラ株式会社 試料保持具
JP7711292B1 (ja) * 2024-10-17 2025-07-22 日本特殊陶業株式会社 保持装置、および、保持装置の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999025006A2 (en) * 1997-11-06 1999-05-20 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
JP2014209615A (ja) * 2013-03-29 2014-11-06 Toto株式会社 静電チャック
TW202013586A (zh) * 2018-06-04 2020-04-01 美商應用材料股份有限公司 基板支撐基座
US20200135528A1 (en) * 2018-10-30 2020-04-30 Toto Ltd. Electrostatic chuck
TW202042303A (zh) * 2019-01-09 2020-11-16 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理裝置之載置台
TW202046443A (zh) * 2018-03-14 2020-12-16 日商Ｔｏｔｏ股份有限公司 靜電吸盤

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US5720818A (en) * 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
US6490145B1 (en) 2001-07-18 2002-12-03 Applied Materials, Inc. Substrate support pedestal
US20090086401A1 (en) 2007-09-28 2009-04-02 Intevac, Inc. Electrostatic chuck apparatus
JP5331519B2 (ja) 2008-03-11 2013-10-30 日本碍子株式会社 静電チャック
JP5665265B2 (ja) 2008-06-24 2015-02-04 東京エレクトロン株式会社 チャンバー部品を介してプロセス流体を導入する方法及びシステム
JP5449750B2 (ja) 2008-11-19 2014-03-19 株式会社日本セラテック 静電チャックおよびその製造方法
KR101040697B1 (ko) * 2009-11-25 2011-06-13 세메스 주식회사 정전척
JP5956379B2 (ja) 2012-04-27 2016-07-27 日本碍子株式会社 半導体製造装置用部材
US9608550B2 (en) 2015-05-29 2017-03-28 Lam Research Corporation Lightup prevention using multi-layer ceramic fabrication techniques
US11227749B2 (en) 2016-02-18 2022-01-18 Lam Research Corporation 3D printed plasma arrestor for an electrostatic chuck
JP6634315B2 (ja) * 2016-03-03 2020-01-22 日本特殊陶業株式会社 保持装置および保持装置の製造方法
US10770270B2 (en) 2016-06-07 2020-09-08 Applied Materials, Inc. High power electrostatic chuck with aperture-reducing plug in a gas hole
KR102438888B1 (ko) 2017-07-06 2022-08-31 엔지케이 인슐레이터 엘티디 반도체 제조 장치용 부재 및 그 제조법
US11715652B2 (en) 2018-09-28 2023-08-01 Ngk Insulators, Ltd. Member for semiconductor manufacturing apparatus
JP7402411B2 (ja) * 2018-10-30 2023-12-21 Toto株式会社 静電チャック
CN113228496B (zh) 2019-01-24 2024-08-20 京瓷株式会社 静电卡盘
US20200411355A1 (en) * 2019-06-28 2020-12-31 Applied Materials, Inc. Apparatus for reduction or prevention of arcing in a substrate support

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999025006A2 (en) * 1997-11-06 1999-05-20 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
JP2014209615A (ja) * 2013-03-29 2014-11-06 Toto株式会社 静電チャック
TW202046443A (zh) * 2018-03-14 2020-12-16 日商Ｔｏｔｏ股份有限公司 靜電吸盤
TW202013586A (zh) * 2018-06-04 2020-04-01 美商應用材料股份有限公司 基板支撐基座
US20200135528A1 (en) * 2018-10-30 2020-04-30 Toto Ltd. Electrostatic chuck
TW202042303A (zh) * 2019-01-09 2020-11-16 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理裝置之載置台

Also Published As

Publication number Publication date
JP7382978B2 (ja) 2023-11-17
US12040160B2 (en) 2024-07-16
US20220246398A1 (en) 2022-08-04
JP2022119338A (ja) 2022-08-17
JP7580555B2 (ja) 2024-11-11
CN114864435A (zh) 2022-08-05
KR102728858B1 (ko) 2024-11-11
TW202232628A (zh) 2022-08-16
KR20220112664A (ko) 2022-08-11
JP2024009020A (ja) 2024-01-19

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