TWI809204B - 半導體製造裝置用構件 - Google Patents

半導體製造裝置用構件 Download PDF

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TWI809204B
TWI809204B TW108135114A TW108135114A TWI809204B TW I809204 B TWI809204 B TW I809204B TW 108135114 A TW108135114 A TW 108135114A TW 108135114 A TW108135114 A TW 108135114A TW I809204 B TWI809204 B TW I809204B
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gas
plug
flow path
semiconductor manufacturing
ceramic plate
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TW108135114A
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TW202025371A (zh
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石川征樹
赤祐司
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日商日本碍子股份有限公司
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Abstract

半導體製造裝置用構件係包括：陶瓷板，係在上面具有晶圓載置面，並內建電極；陶瓷製之緻密質塞，係被配設於陶瓷板的下面側，並藉環狀之接合部與陶瓷板進行陶瓷接合；金屬製之冷卻板，係在環狀接合部以外的部分與陶瓷板的下面接合；以及氣體流路，係具有：氣體放出孔，係在厚度方向貫穿陶瓷板；及氣體內部流路，係在緻密質塞的上面側與下面側一面彎曲一面貫穿，並與氣體放出孔連通；通過比環狀接合部之內周更內側。

Description

半導體製造裝置用構件
本發明係有關於一種半導體製造裝置用構件。
自以往，已知各種半導體製造裝置用構件。例如，專利文獻1之半導體製造裝置用構件係在靜電夾頭的下面金屬製之冷卻板被接合，而該靜電夾頭係在上面具有晶圓載置面。冷卻板係具有氣體供給孔。靜電夾頭係具有：有底筒狀孔，係與氣體供給孔連通；及氣體放出孔，係從有底筒狀孔之底面貫穿至晶圓載置面。在靜電夾頭，係多孔質塞在被嵌入有底筒狀孔的狀態經由樹脂製之黏接劑被黏接。又，例如專利文獻2之半導體製造裝置用構件係經由中間板將冷卻板配置於靜電夾頭的下面，而該靜電夾頭係在上面具有晶圓載置面。冷卻板係具有氣體供給孔。靜電夾頭係具有從下面貫穿至晶圓載置面的氣體放出孔。中間板係與冷卻板一起形成與氣體供給孔及氣體放出孔連通的空處，並將緻密質塞配置於此空處。緻密質塞係具有在上面側與下面側一面彎曲一面貫穿的氣體內部流路。這些半導體製造裝置用構件係在室內將晶圓載置於晶圓載置面，將原料氣體導入室內，且對冷卻板施加用以產生電漿之RF電壓，藉此，產生電漿，進行晶圓之處理。在此時，在氣體供給孔，係導入氦等之背面氣體。背面氣體係從氣體供給孔，經多孔質塞之空隙或緻密質塞之氣體內部流路，通過氣體放出孔，被供給至晶圓之背面。 [先行專利文獻] [專利文獻]
[專利文獻1] 日本特開2013－232641號公報 [專利文獻2] 美國專利申請公開第2017/0243726號專利說明書
[發明所欲解決之課題]
可是，在專利文獻1，係經由樹脂製之黏接劑將多孔質塞與有底筒狀孔黏接，但是樹脂製之黏接劑係會伴隨長期使用而劣化。因為像這樣劣化之部分係成為絕緣破壞的原因之一，所以不佳。又，多孔質塞係亦具有絕緣耐壓低的問題。因為這亦成為絕緣破壞的原因之一，所以不佳。又，在專利文獻2，係因為只是將緻密質塞配置於空處，所以在緻密質塞與空處的內面之間會發生間隙。因為這種間隙亦成為絕緣破壞的原因之一，所以不佳。經由樹脂製之黏接劑將緻密質塞黏接於空處，來抑制間隙的發生，亦如上述所示，樹脂製之黏接劑係會伴隨長期使用而劣化，會成為絕緣破壞的原因之一。
本發明係為了解決這種課題所開發者，其主要目的在於作成比以往難產生絕緣破壞。 [解決課題之手段]
本發明之半導體製造裝置用構件係包括： 陶瓷板，係在上面具有晶圓載置面，並內建電極； 陶瓷製之緻密質塞，係被配設於該陶瓷板的下面側，並藉環狀之接合部與該陶瓷板進行陶瓷接合； 金屬製之冷卻板，係在該接合部以外的部分與該陶瓷板的下面接合；以及 氣體流路，係具有：氣體放出孔，係在厚度方向貫穿該陶瓷板；及氣體內部流路，係在該緻密質塞的上面側與下面側一面彎曲一面貫穿，並與該氣體放出孔連通；通過比該接合部之內周更內側。
在本半導體製造裝置用構件，係藉環狀之接合部將陶瓷板與陶瓷製之緻密質塞進行陶瓷接合。即，陶瓷板與緻密質塞之接合部分係陶瓷。因此，與使用樹脂製之黏接劑黏接兩者的情況相比，接合部之劣化更難發生。又，緻密質塞係絕緣耐壓比多孔質塞高。進而，因為緻密質塞之氣體內部流路係從上面至下面一面彎曲一面貫穿，所以氣體內部流路的長度係比氣體內部流路從上面至下面筆直地貫穿的情況長，可抑制經由此氣體內部流路發生放電。因此，可得到絕緣破壞比以往難發生之效果。
在本專利說明書，「上」、「下」係不是表示絕對之位置關係，而是表示相對之位置關係。因此，根據陶瓷加熱器之方向，「上」、「下」係成為「下」、「上」，或成為「左」、「右」，或成為「前」、「後」。
又，在本專利說明書，「陶瓷接合」係意指陶瓷彼此以陶瓷接合。亦可陶瓷板與緻密質塞係例如，藉燒結接合或擴散接合等之固態接合被接合。燒結接合係將陶瓷粉體插入接合界面，再一面施加壓力一面加熱，令燒結而接合的方法。擴散接合係在使陶瓷彼此直接接觸或加壓下加熱，使構成元素擴散而接合的方法。又，亦可陶瓷板與緻密質塞係例如藉陶瓷性黏接劑黏接。
此外，緻密質塞之氣孔率係未滿0.1%較佳。又，氣體內部流路係在從上方觀察時從上面的開口看不到下面的開口較佳。緻密質塞之陶瓷係高純度(例如純度99%以上)較佳。
在本發明之半導體製造裝置用構件，該接合部係陶瓷燒結體較佳。這是由於絕緣耐壓比接合部不是燒結體者，例如接合部只是使陶瓷性黏接劑變硬者更高。
在本發明之半導體製造裝置用構件，亦可在該緻密質塞的上面，係設置凹部，該凹部係與該氣體放出孔及該氣體內部流路連通，並開口比該氣體內部流路更大。依此方式，因為氣體內部流路經由開口比氣體內部流路更大的凹部與氣體放出孔連通，所以氣體放出孔與氣體內部流路之位置對準成為容易。在這種半導體製造裝置用構件，亦可該氣體放出孔係由複數個氣體細孔所構成，該凹部係與該複數個氣體細孔連通。依此方式，經由凹部可向複數個氣體細孔供給氣體。
在本發明之半導體製造裝置用構件，亦可該氣體內部流路係採用螺旋狀或鋸齒狀之通路。依此方式，可更抑制經由氣體內部流路發生放電。
在本發明之半導體製造裝置用構件，亦可該冷卻板係具有在上面開口之筒狀孔，該緻密質塞之至少一部分係被配設於該筒狀孔內。此外，筒狀孔係有底或無底都可。在這種半導體製造裝置用構件，亦可該緻密質塞係具有：柱狀之塞本體，係具有該氣體內部流路；及筒狀之裙部，係從該塞本體向下方突出。依此方式，因為裙部覆蓋在筒狀孔所露出之金屬，所以可使絕緣距離變長。
其次，使用圖面，說明本發明之適合的實施形態。圖1係半導體製造裝置用構件10的縱向剖面圖，圖2係圖1之局部放大圖，圖3係緻密質塞30及接合部32的上視圖。
半導體製造裝置用構件10係包括陶瓷板20、緻密質塞30、冷卻板40以及氣體流路50。
陶瓷板20係氧化鋁燒結體等之陶瓷製的圓板(例如直徑300mm、厚度5mm)。陶瓷板20的上面20a係成為晶圓載置面。陶瓷板20係內建靜電電極22及加熱器電極24，並具有複數個在厚度方向貫穿的氣體放出孔25(例如直徑0.5mm)。在陶瓷板20的上面20a，係藉壓花加工設置未圖示之凹凸，氣體放出孔25開口於凹部的底面。靜電電極22係平面狀的電極，經由未圖示之供電棒被施加直流電壓。此靜電電極22被施加直流電壓時晶圓W係藉靜電吸附力被吸附固定於晶圓載置面，而解除直流電壓之施加時晶圓W之對晶圓載置面的吸附固定被解除。加熱器電極24係從加熱器線之一方的端子至另一方的端子以一筆書寫要領在晶圓載置面之整個面所配線。對此加熱器電極24，係經由未圖示之供電棒被供給電力。靜電電極22與加熱器電極24都以在氣體放出孔25不露出的方式所形成。這種陶瓷板20係被稱為靜電夾頭加熱器。此外，在圖1以外的圖面，係省略靜電電極22及加熱器電極24的圖示。
緻密質塞30係種類與陶瓷板20相同之陶瓷製的塞(例如外徑4mm、全長4mm)，並被設置成對應於氣體放出孔25的各個。緻密質塞30係具有在緻密質塞30的上面30a與下面30b一面彎曲成螺旋狀一面貫穿的氣體內部流路35。氣體內部流路35係在從上方觀察時成為外周呈圓形之圓滑的螺旋狀(例如捲繞直徑20mm、螺距0.7mm、流路截面直徑0.1mm)(參照圖3)。此氣體內部流路35係與陶瓷板20之氣體放出孔25連通。緻密質塞30係具有：柱狀之塞本體33，係具有氣體內部流路35；及筒狀之裙部34(例如內徑3mm、長度3mm)，係從塞本體33向下方突出。在緻密質塞30的上面30a，係設置凹部36(例如內徑3mm、深度0.1mm)，該凹部36係與氣體放出孔25及氣體內部流路35連通，並開口比氣體內部流路35更大。緻密質塞30係以種類與陶瓷板20相同之陶瓷製的接合部32和陶瓷板20的下面20b進行陶瓷接合。接合部32係環狀，並被形成於緻密質塞30的上面30a中凹部36之周圍之環狀的部分(參照圖3)。緻密質塞30係例如，亦可對使用3D列印機所成形的成形體燒結所製造，亦可對模鑄成形的成形體燒結所製造。模鑄成形之細節係被揭示於例如專利第5458050號公報等。在模鑄成形，係在成形模的成形空間，注入包含陶瓷粉體、溶媒、分散劑以及凝膠劑的陶瓷漿，並使凝膠劑產生化學反應，而使陶瓷漿變成凝膠，藉此，在成形模內形成成形體。亦可在模鑄成形，係將以臘等之熔點低的材料所形成的外模及砂心用作成形模，在成形模內形成成形體，然後，加熱至成形模之熔點以上的溫度，而使成形模熔化並除去或消失，製造成形體。
冷卻板40係金屬鋁或鋁合金等之金屬製的圓板(直徑與陶瓷板20相同或更大的圓板)。在冷卻板40之內部，係形成冷媒所循環之冷媒流路42。冷卻板40係具有複數個在厚度方向貫穿，即在上面40a及下面40b開口的筒狀孔40h。在筒狀孔40h之內部，係配置緻密質塞30，筒狀孔40h中未配置緻密質塞30的部分係成為氣體供給孔45。筒狀孔40h之直徑係比緻密質塞30之直徑稍(例如0.5mm或1mm)大。因此，在包圍筒狀孔40h之壁面40c與緻密質塞30的外周面30c之間，係未圖示之間隙存在。冷卻板40的上面40a係經由樹脂製之接合片60與陶瓷板20的下面20b黏接。在接合片60，係設置用以插入緻密質塞30的孔(孔徑係比緻密質塞30之直徑更稍大)。此外，亦可冷卻板40的上面40a係經由焊接材料層與陶瓷板20的下面20b接合。
氣體流路50係以通過比接合部32之內周更內側的方式所形成。氣體流路50係具有：氣體放出孔25，係被設置於陶瓷板20；及氣體內部流路35，係被設置於緻密質塞30。又，氣體流路50係具有在冷卻板40所設置之氣體供給孔45，從氣體供給孔45所供給之氣體通過氣體內部流路35後，從氣體放出孔25向晶圓載置面被放出。
其次，說明依此方式所構成之半導體製造裝置用構件10的使用例。首先，在未圖示之室內已設置半導體製造裝置用構件10的狀態，將晶圓W載置於晶圓載置面。然後，藉真空泵對室內進行降壓而調整成為既定真空度，再對陶瓷板20的靜電電極22施加直流電壓，產生靜電吸附力，而將晶圓W吸附固定於晶圓載置面。接著，將室內設定成既定壓力(例如數十~數百Pa)的反應氣體環境，在此狀態，對在室內的天花板部分所設置之未圖示的上部電極與半導體製造裝置用構件10的靜電電極22之間施加高頻電壓，而產生電漿。此外，亦可替代對上部電極與靜電電極22之間施加高頻電壓，而對上部電極與冷卻板40之間施加高頻電壓。晶圓W之表面係藉所產生之電漿被蝕刻。在冷卻板40的冷媒流路42，係冷媒循環。在加熱器電極24，係以晶圓W之溫度成為所預設之目標溫度的方式被供給電力。在氣體流路50，係從未圖示之氣體高壓容器被導入氦等之背面(backside)氣體。背面氣體係通過氣體供給孔45、氣體內部流路35以及氣體放出孔25，被供給至晶圓載置面。在產生電漿時，若氣體流路是筆直的形狀，可能通過氣體流路在晶圓W與冷卻板40之間發生放電。又，在產生電漿時，若接合部是樹脂製之黏接劑時，伴隨長期使用而劣化，可能通過緻密質塞30之表面在晶圓W與冷卻板40之間發生放電。
其次，說明半導體製造裝置用構件10之製造例。圖4係半導體製造裝置用構件10之製程圖。首先，準備陶瓷板20及緻密質塞30。將包含種類與陶瓷板20一樣之陶瓷粉末、燒結助劑以及溶劑的接合材料膏32p成環狀地塗佈於此緻密質塞30的上面30a。作為燒結助劑，係例如列舉氟化鎂、氧化鈣、氧化矽、硝酸鎂、氧化鈦等。作為溶劑，係例如列舉甲醇、乙醇等。將已塗佈接合材料膏32p的上面30a重疊於陶瓷板20的下面20b(參照圖4(a))。在此時，將陶瓷板20的氣體放出孔25與緻密質塞30的凹部36配置成相對向。然後，對陶瓷板20與緻密質塞30一面加壓一面加熱，而對接合材料膏32p烘烤，藉此，將兩者接合(燒結接合)。接合材料膏32p係被烘烤而成為接合部32。在此時，因為在接合材料膏32p係含有燒結助劑，所以不設定那麼高壓或高溫亦可接合。藉此，可得到複數個陶瓷燒結體製之緻密質塞30經由環狀之接合部32與陶瓷板20之下面20b接合的接合體70(參照圖4(b))。在陶瓷板20與接合部32之界面及緻密質塞30與接合部32之界面係含有燒結助劑成分。此外，在接合部32是氧化鋁燒結體製的情況，作為燒結助劑，係考慮維持高之氧化鋁燒結體的體積電阻係數或耐電壓時，氟化鎂(MgF2 )較佳。這是由於MgF2 係體積電阻係數或耐電壓比其他的燒結助劑(例如CaO等)難降低。
接著，準備已形成在厚度方向貫穿之筒狀孔40h的冷卻板40(參照圖4(b))。將樹脂性之接合片60配置於此冷卻板40的上面40a與接合體70之陶瓷板20的下面20b之至少一方(此處係上面40a)，然後，將兩者對準並黏接。在此時，作成在包圍筒狀孔40h的壁面40c與緻密質塞30的外周面30c之間係間隙存在。藉此，可得到半導體製造裝置用構件10。此外，亦可替代以接合片60黏接，而以焊接材料將冷卻板40的上面40a與陶瓷板20的下面20b接合。
在以上所詳述之半導體製造裝置用構件10，係以環狀之接合部32將陶瓷板20與陶瓷製之緻密質塞30進行陶瓷接合。即，陶瓷板20與緻密質塞30之接合部分係陶瓷。氧化鋁燒結體等之陶瓷係由於與樹脂相比，不僅絕緣耐壓更高，而且對半導體製程中之環境氣體(例如電漿等)的耐蝕性更高等，所以長期使用所伴隨之劣化少。因此，與使用樹脂製之黏接劑黏接兩者的情況相比，接合部32之劣化更難發生。藉此，可抑制通過塞之表面的絕緣破壞。又，緻密質塞30係絕緣耐壓比多孔質塞高。因此，與替代緻密質塞30，使用多孔質塞或其外周採用緻密質者(例如，將多孔質塞嵌入緻密質之筒狀構件而作成一體化者)的情況相比，絕緣破壞難發生。進而，因為緻密質塞30之氣體內部流路35係從上面30a至下面30b一面彎曲一面貫穿，所以可抑制經由此氣體內部流路35發生放電。藉這些，可抑制通過塞之內部空間的絕緣破壞。因此，可得到絕緣破壞比以往難發生之效果。
又，冷卻板40係具有在上面40a開口的筒狀孔40h，緻密質塞30之至少一部分係被配設於筒狀孔40h內。緻密質塞30係具有：柱狀之塞本體33，係具有氣體內部流路35；及筒狀之裙部34，係從塞本體33向下方突出；因為裙部34覆蓋在筒狀孔40h所露出的金屬，所以可使絕緣距離變長。在此時，若作成裙部34的下端到達筒狀孔40h的下端，因為裙部34完全地覆蓋在筒狀孔40h所露出的金屬，所以可確實地抑制經由氣體流路50之放電。
進而，因為在緻密質塞30的上面30a係設置凹部36，該凹部36係與氣體放出孔25及氣體內部流路35連通，且開口比氣體內部流路35的上端更大，所以氣體放出孔25與氣體內部流路35之位置對準成為容易。
進而又，因為氣體內部流路35係螺旋狀的通硌，所以可更抑制經由氣體內部流路35發生放電。
而且，因為在包圍筒狀孔40h之壁面40c與緻密質塞30的外周面30c之間係間隙存在，所以和壁面40c與緻密質塞30的外周面30c被黏接的情況相比，不必考慮緻密質塞30與冷卻板40之間的熱移動。因此，晶圓W之溫度控制的設計成為容易。
而且又，因為使用包含陶瓷粉體與燒結助劑的接合材料膏32p將陶瓷板20與緻密質塞30接合，所以不設定那麼高壓或高溫亦可將兩者接合。
此外，本發明係絲毫未被限定為上述之實施形態，只要屬於本發明的技術範圍，能以各種形態實施，這係當然。例如，亦可將以下所示之別的例子適當地組合並應用。
例如，在上述之實施形態，亦可氣體內部流路35係採用如圖5、圖6所示之鋸齒形。圖5、圖6係緻密質塞30之別的例子的縱向剖面圖。在圖5，氣體內部流路35係鋸齒具有直角的角。此角係銳角或鈍角都可。在圖6，氣體內部流路35係角是圓角，即無角。這種鋸齒亦可是平面性，亦可是立體性。又，亦可氣體內部流路35係在從上方觀察時如外周成為多角形之具有角的螺旋狀。螺旋之圈數或鋸齒之折回次數等係無特別地限定。
在上述之實施形態，緻密質塞30係採用具有裙部34或凹部36者，但是亦可如圖7所示，省略至少一方。圖7係半導體製造裝置用構件10之別的例子的局部放大圖，半導體製造裝置用構件10係具備省略裙部34及凹部36之雙方的緻密質塞130。在圖7，對與上述之實施形態相同的構成元件係附加相同的符號，並省略其說明。在這種緻密質塞130，亦因為氣體內部流路35係從上面30a至下面30b一面彎曲一面貫穿，所以氣體內部流路35的長度係比緻密質塞130(塞本體33)之全長長，而絕緣破壞難發生。亦可作成緻密質塞130係塞本體33的下端到達冷卻板40之筒狀孔40h的下端。在此情況，因為緻密質塞130的氣體內部流路35貫穿冷卻板40，所以氣體內部流路35兼具氣體供給孔45。亦可在緻密質塞130，氣體內部流路35係採用如圖5、圖6所示的鋸齒形。
在上述之實施形態，陶瓷板20係如圖8、圖9所示，具有在下面20b開口之有底筒狀孔20h，緻密質塞30之至少一部分係被配置於有底筒狀孔20h內。圖8、圖9係半導體製造裝置用構件10之別的例子的局部放大圖。在圖8、圖9，對與上述之實施形態相同的構成元件係附加相同的符號，並省略其說明。在此情況，緻密質塞30係亦可如圖8所示，一部分被配置於有底筒狀孔20h內，亦可如圖9所示，全部被配置於有底筒狀孔20h內。又，緻密質塞30係亦可如圖8所示，藉環狀的接合部32與有底筒狀孔20h之壁面20c進行陶瓷接合，亦可如圖9所示，藉環狀的接合部32與有底筒狀孔20h之底面20d進行陶瓷接合。其中，如圖9所示緻密質塞30與有底筒狀孔20h之底面20d進行陶瓷接合，因為在陶瓷接合時的加壓比較容易，所以較佳。在如圖8所示，緻密質塞30與有底筒狀孔20h之壁面20c進行陶瓷接合的情況，亦可緻密質塞30的上面30a係與底筒狀孔20h之底面20d接觸，亦可在與底面20d之間有間隙。亦可有底筒狀孔20h的直徑係採用比緻密質塞30之直徑稍(例如0.5mm或1mm)大。
在上述之實施形態，亦可氣體放出孔25係例如圖9所示，由複數個氣體細孔25a所構成，並凹部36係與複數個氣體細孔25a連通。依此方式，經由凹部36向複數個氣體細孔25a供給氣體。
在上述之實施形態，在冷卻板40所設置之筒狀孔40h係採用在厚度方向貫穿冷卻板40之無底的孔，但是在下面40b側具有底之有底的孔亦可。在此情況，亦可將在冷卻板40之有底筒狀孔的壁面或底面開口並與外部連通的流路作為氣體供給孔45。又，亦可如圖9所示，將緻密質塞30配置於陶瓷板20之有底筒狀孔20h內，而省略筒狀孔40h。在此情況，亦可將在冷卻板40之上面40a開口的流路作為氣體供給孔45。
在上述之實施形態，係採用在包圍筒狀孔40h之壁面40c與緻密質塞30的外周面30c之間間隙存在者，但是亦可對間隙填充黏接劑。又，在圖8、圖9，在包圍有底筒狀孔20h之壁面20c與緻密質塞30的外周面30c之間，係亦可間隙存在者，亦可對間隙填充黏接劑。
在上述之實施形態，主要說明陶瓷板20、緻密質塞30以及接合部32為氧化鋁製的情況，但是例如亦可採用氮化鋁製，亦可採用碳化矽製，亦可採用氮化矽製，亦可採用其他的陶瓷製。在這些構件是氮化鋁製的情況，作為接合材料膏32p所含的燒結助劑，係列舉氧化鎂、氧化釔等。在碳化矽製的情況係列舉氧化釔等，在氮化矽製的情況係列舉氧化鋯等。
在上述之實施形態，作為陶瓷板20，係舉例表示內建靜電電極22及加熱器電極24之雙方的靜電夾頭加熱器，但是不是特別地被限定為此。例如，作為陶瓷板20，亦可採用僅內建靜電電極22的靜電夾頭，亦可採用僅內建加熱器電極24的陶瓷加熱器。又，亦可陶瓷板20係內建高頻(RF)電極。
在上述之實施形態，藉燒結接合將陶瓷板20與冷卻板40接合，但是只要是可得到陶瓷之接合部32的方法，接合方法係無特別地限定。例如，亦可藉擴散接合等接合。又，亦可藉陶瓷性黏接劑黏接。作為陶瓷性黏接劑，係例如，列舉AREMCO公司製的CERAMABOND571、CERAMABOND690以及CERAMABOND865、或東亞合成化學(股份有限公司)製之Aron Ceramic等。此外，因為陶瓷性黏接劑所含的有機材料係揮發，所以在使用陶瓷性黏接劑的情況，亦在陶瓷之接合部32係實質上不含有機材料。
在上述之實施形態，接合材料膏32p係塗佈於緻密質塞30的上面30a，但是亦可塗佈於陶瓷板20的下面20b，亦可塗佈於緻密質塞30的上面30a與陶瓷板20之下面20b的雙方。
本專利申請係將於2018年9月28日所申請之美國專利暫時申請第62/738205號作為優先權主張的基礎，藉引用在本專利說明書包含其內容的全部。 [工業上之可利用性]
本發明係可利用於在半導體製造裝置所使用之構件，例如靜電夾頭加熱器、靜電夾頭、陶瓷加熱器等。
10:半導體製造裝置用構件 20:陶瓷板 20a、30a、40a:上面 20b、30b、40b:下面 22:靜電電極 24:加熱器電極 25:氣體放出孔 30:緻密質塞 32:接合部 35:氣體內部流路 40:冷卻板 42:冷媒流路 45:氣體供給孔 50:氣體流路 60:接合片 W:晶圓
[圖1] 係半導體製造裝置用構件10的縱向剖面圖。 [圖2] 係圖1之局部放大圖。 [圖3] 係緻密質塞30及接合部32的上視圖。 [圖4] 係半導體製造裝置用構件10之製程圖。 [圖5] 係緻密質塞30之別的例子的縱向剖面圖。 [圖6] 係緻密質塞30之別的例子的縱向剖面圖。 [圖7] 係半導體製造裝置用構件10之別的例子的局部放大圖。 [圖8] 係半導體製造裝置用構件10之別的例子的局部放大圖。 [圖9] 係半導體製造裝置用構件10之別的例子的局部放大圖。
10:半導體製造裝置用構件
20:陶瓷板
20a、30a、40a:上面
20b、30b、40b:下面
22:靜電電極
24:加熱器電極
25:氣體放出孔
30:緻密質塞
32:接合部
35:氣體內部流路
40:冷卻板
42:冷媒流路
45:氣體供給孔
50:氣體流路
60:接合片
W:晶圓

Claims (7)

  1. 一種半導體製造裝置用構件，係包括：陶瓷板，係在上面具有晶圓載置面，並內建電極；陶瓷製之緻密質塞，係被配設於該陶瓷板的下面側，並藉環狀之接合部與該陶瓷板進行陶瓷接合；金屬製之冷卻板，係在該接合部以外的部分與該陶瓷板的下面接合；以及氣體流路，係具有：氣體放出孔，係在厚度方向貫穿該陶瓷板；及氣體內部流路，係在該緻密質塞的上面側與下面側一面彎曲一面貫穿，並與該氣體放出孔連通；通過比該接合部之內周更內側。
  2. 如申請專利範圍第1項之半導體製造裝置用構件，其中該接合部係陶瓷燒結體。
  3. 如申請專利範圍第1項之半導體製造裝置用構件，其中在該緻密質塞的上面，係設置凹部，該凹部係與該氣體放出孔及該氣體內部流路連通，並開口比該氣體內部流路更大。
  4. 如申請專利範圍第3項之半導體製造裝置用構件，其中該氣體放出孔係由複數個氣體細孔所構成；該凹部係與該複數個氣體細孔連通。
  5. 如申請專利範圍第1~4項中任一項之半導體製造裝置用構件，其中該氣體內部流路係螺旋狀或鋸齒狀之通路。
  6. 如申請專利範圍第1~4項中任一項之半導體製造裝置用構件，其中該緻密質塞係具有：柱狀之塞本體，係具有該氣體內部流路；及筒狀之裙部，係從該塞本體向下方突出。
  7. 如申請專利範圍第1~4項中任一項之半導體製造裝置用構件，其中該冷卻板係具有在上面開口之筒狀孔；該緻密質塞之至少一部分係被配設於該筒狀孔內。
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WO2024004147A1 (ja) * 2022-06-30 2024-01-04 日本碍子株式会社 半導体製造装置用部材
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