KR102728858B1 - 반도체 제조 장치용 부재 및 플러그 - Google Patents

반도체 제조 장치용 부재 및 플러그 Download PDF

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Publication number
KR102728858B1
KR102728858B1 KR1020210178710A KR20210178710A KR102728858B1 KR 102728858 B1 KR102728858 B1 KR 102728858B1 KR 1020210178710 A KR1020210178710 A KR 1020210178710A KR 20210178710 A KR20210178710 A KR 20210178710A KR 102728858 B1 KR102728858 B1 KR 102728858B1
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South Korea
Prior art keywords
plug
gas
semiconductor manufacturing
manufacturing device
ceramic plate
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KR1020210178710A
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English (en)
Korean (ko)
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KR20220112664A (ko
Inventor
마사키 이시카와
야스호 아오키
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엔지케이 인슐레이터 엘티디
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    • H01L21/6833—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H01L21/67109—
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Glass Compositions (AREA)
KR1020210178710A 2021-02-04 2021-12-14 반도체 제조 장치용 부재 및 플러그 Active KR102728858B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2021-016385 2021-02-04
JP2021016385A JP7382978B2 (ja) 2021-02-04 2021-02-04 半導体製造装置用部材及びプラグ

Publications (2)

Publication Number Publication Date
KR20220112664A KR20220112664A (ko) 2022-08-11
KR102728858B1 true KR102728858B1 (ko) 2024-11-11

Family

ID=82611592

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210178710A Active KR102728858B1 (ko) 2021-02-04 2021-12-14 반도체 제조 장치용 부재 및 플러그

Country Status (5)

Country Link
US (1) US12040160B2 (enExample)
JP (2) JP7382978B2 (enExample)
KR (1) KR102728858B1 (enExample)
CN (1) CN114864435A (enExample)
TW (1) TWI824350B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7616762B2 (ja) * 2020-12-14 2025-01-17 東京エレクトロン株式会社 プラズマ処理装置
JP7744328B2 (ja) * 2022-12-21 2025-09-25 日本碍子株式会社 半導体製造装置用部材、プラグ及びプラグ製造方法
JP7764356B2 (ja) * 2022-12-21 2025-11-05 日本碍子株式会社 プラグ、プラグ製造方法及び半導体製造装置用部材
WO2025177564A1 (ja) * 2024-02-22 2025-08-28 日本碍子株式会社 半導体製造装置用部材
WO2026063179A1 (ja) * 2024-09-18 2026-03-26 京セラ株式会社 試料保持具
JP7711292B1 (ja) * 2024-10-17 2025-07-22 日本特殊陶業株式会社 保持装置、および、保持装置の製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009158917A (ja) * 2007-09-28 2009-07-16 Intevac Inc 静電チャック装置
JP2013232641A (ja) * 2012-04-27 2013-11-14 Ngk Insulators Ltd 半導体製造装置用部材
JP2014209615A (ja) * 2013-03-29 2014-11-06 Toto株式会社 静電チャック
WO2019009028A1 (ja) * 2017-07-06 2019-01-10 日本碍子株式会社 半導体製造装置用部材及びその製法
JP2019519927A (ja) * 2016-06-07 2019-07-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ガス孔に開口縮小プラグを有する大電力静電チャック
JP2020057786A (ja) * 2018-09-28 2020-04-09 日本碍子株式会社 半導体製造装置用部材
WO2020153449A1 (ja) * 2019-01-24 2020-07-30 京セラ株式会社 静電チャック

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5720818A (en) * 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US6490145B1 (en) 2001-07-18 2002-12-03 Applied Materials, Inc. Substrate support pedestal
JP5331519B2 (ja) 2008-03-11 2013-10-30 日本碍子株式会社 静電チャック
JP5665265B2 (ja) 2008-06-24 2015-02-04 東京エレクトロン株式会社 チャンバー部品を介してプロセス流体を導入する方法及びシステム
JP5449750B2 (ja) 2008-11-19 2014-03-19 株式会社日本セラテック 静電チャックおよびその製造方法
KR101040697B1 (ko) * 2009-11-25 2011-06-13 세메스 주식회사 정전척
US9608550B2 (en) 2015-05-29 2017-03-28 Lam Research Corporation Lightup prevention using multi-layer ceramic fabrication techniques
US11227749B2 (en) 2016-02-18 2022-01-18 Lam Research Corporation 3D printed plasma arrestor for an electrostatic chuck
JP6634315B2 (ja) * 2016-03-03 2020-01-22 日本特殊陶業株式会社 保持装置および保持装置の製造方法
JP6504532B1 (ja) * 2018-03-14 2019-04-24 Toto株式会社 静電チャック
US11456161B2 (en) * 2018-06-04 2022-09-27 Applied Materials, Inc. Substrate support pedestal
JP7002014B2 (ja) * 2018-10-30 2022-01-20 Toto株式会社 静電チャック
JP7402411B2 (ja) * 2018-10-30 2023-12-21 Toto株式会社 静電チャック
JP7134104B2 (ja) * 2019-01-09 2022-09-09 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の載置台
US20200411355A1 (en) * 2019-06-28 2020-12-31 Applied Materials, Inc. Apparatus for reduction or prevention of arcing in a substrate support

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009158917A (ja) * 2007-09-28 2009-07-16 Intevac Inc 静電チャック装置
JP2013232641A (ja) * 2012-04-27 2013-11-14 Ngk Insulators Ltd 半導体製造装置用部材
JP2014209615A (ja) * 2013-03-29 2014-11-06 Toto株式会社 静電チャック
JP2019519927A (ja) * 2016-06-07 2019-07-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ガス孔に開口縮小プラグを有する大電力静電チャック
WO2019009028A1 (ja) * 2017-07-06 2019-01-10 日本碍子株式会社 半導体製造装置用部材及びその製法
JP2020057786A (ja) * 2018-09-28 2020-04-09 日本碍子株式会社 半導体製造装置用部材
WO2020153449A1 (ja) * 2019-01-24 2020-07-30 京セラ株式会社 静電チャック

Also Published As

Publication number Publication date
TWI824350B (zh) 2023-12-01
JP7382978B2 (ja) 2023-11-17
US12040160B2 (en) 2024-07-16
US20220246398A1 (en) 2022-08-04
JP2022119338A (ja) 2022-08-17
JP7580555B2 (ja) 2024-11-11
CN114864435A (zh) 2022-08-05
TW202232628A (zh) 2022-08-16
KR20220112664A (ko) 2022-08-11
JP2024009020A (ja) 2024-01-19

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